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1. 发明公开

EP1142006A1 BPSG REFLOW METHOD 审中-公开
标题翻译： BPSG层的回流焊工艺
公开(公告)号：EP1142006A1
公开(公告)日：2001-10-10
申请号：EP99959078.9
申请日：1999-11-22
申请人： Applied Materials, Inc. , International Business Machines
发明人： XIA, Li-Qun , CONTI, Richard A. , GALIANO, Maria , YIEH, Ellie
IPC分类号： H01L21/3105
CPC分类号： H01L21/31051 , H01L21/3105 , H01L21/31625
摘要： A multistep method for planarizing a silicon oxide insulating layer such as a deposited borophosphosilicate glass (BPSG) layer. The method includes several different planarization stages. During an initial, pre-planarization stage, a substrate having a BPSG layer deposited over it is loaded into a substrate processing chamber. Then, during a first planarization stage after the pre-planarization stage, oxygen and hydrogen are flowed into the substrate processing chamber to form a steam ambient in said chamber and the substrate is heated in the steam ambient from a first temperature to a second temperature. The first temperature is below a reflow temperature of the BPSG layer and the second temperature is sufficient to reflow the layer. After the substrate is heated to the second temperature during a second planarization stage, the temperature of the substrate and the conditions within the substrate processing chamber are maintained at conditions sufficient to reflow the BPSG layer in the steam ambient. In a more preferred embodiment, the multistep planarization method also includes a third planarization stage, after the second stage. In the third planarization stage, the flow of hydrogen is stopped while the flow of oxygen is maintained, thereby forming an oxygen ambient in the substrate processing chamber. The substrate temperature is maintained in the oxygen ambient at a temperature above the reflow temperature of the BPSG layer. It is believed that this additional step minimizes the amount of moisture incorporated into the reflowed BPSG layer.

2. 发明公开

EP1456434A1 A METHOD OF DEPOSITING DIELECTRIC MATERIALS IN DAMASCENE APPLICATIONS 审中-公开
标题翻译：工艺为介电材料，镶嵌应用分离
公开(公告)号：EP1456434A1
公开(公告)日：2004-09-15
申请号：EP02805144.9
申请日：2002-12-13
申请人： Applied Materials, Inc.
发明人： LEE, Ju-Hyung , XU, Ping , VENKATARAMAN, Shankar , XIA, Li-Qun , HAN, Fei , YIEH, Ellie , NEMANI, Srinivas, D. , YIM, Kangsub , SINHA, Ashok, K. , MOGHADAM, Farhad, K. , ZHENG, Yi
IPC分类号： C23C16/32 , C23C16/42 , H01L21/314 , H01L21/02
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

3. 发明公开

EP1815505A2 TENSILE AND COMPRESSIVE STRESSED MATERIALS FOR SEMICONDUCTORS 审中-公开
标题翻译：拉力和压力半导体材料的WRAP
公开(公告)号：EP1815505A2
公开(公告)日：2007-08-08
申请号：EP05848796.8
申请日：2005-11-10
申请人： APPLIED MATERIALS, INC.
发明人： BALSEANU, Mihaela , JUNG, Kee, Bum , HUANG, Lihua, Li , XIA, Li-Qun , WANG, Rongping , WITTY, Derek, R. , STERN, Lewis , SEAMONS, Martin, Jay , M'SAAD, Hichem , KWAN, Michael, Chiu
IPC分类号： H01L21/318 , H01L21/3105 , C23C16/34 , C23C16/56
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , C23C16/56 , H01J37/32082 , H01L21/02274 , H01L21/3105 , H01L21/3185 , H01L2924/0002 , H01L2924/00
摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.

4. 发明公开

EP1599898A2 METHOD TO IMPROVE CRACKING THRESHOLDS AND MECHANICAL PROPERTIES OF LOW-K DIELECTRIC MATERIAL 审中-公开
标题翻译：方法提高颠簸和低k电介质材料VALUE力学性能的违反
公开(公告)号：EP1599898A2
公开(公告)日：2005-11-30
申请号：EP04701530.0
申请日：2004-01-12
申请人： APPLIED MATERIALS, INC.
发明人： LI, Lihua , HUANG, Tzu-Fang , ROCHA-ALVAREZ, Juan C. , XIA, Li-Qun
IPC分类号： H01L21/316 , C23C16/40 , C23C16/56
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/56 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76826
摘要： One embodiment of the present invention is a method for depositing low-k dielectric films that includes steps of: (a) CVD-depositing a low-k dielectric film; and (b) plasma treating the CVD-deposited, low-k dielectric film.

5. 发明公开

EP1558784A2 TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE 审中-公开
标题翻译： FOR DAMA SCENE阻挡双层膜使用该下一代良好的抗氧化性
公开(公告)号：EP1558784A2
公开(公告)日：2005-08-03
申请号：EP03773166.8
申请日：2003-10-07
申请人： Applied Materials, Inc.
发明人： ZHENG, Yi , NEMANI, Srinivas, D. , XIA, Li-Qun
IPC分类号： C23C16/32 , C23C16/02 , H01L21/314 , H01L21/768
CPC分类号： H01L21/02167 , C23C16/0272 , C23C16/325 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/314 , H01L21/7681 , H01L21/76826 , H01L21/76832
摘要： A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

6. 发明公开

EP1078112A1 A SUB-ATMOSPHERIC CHEMICAL VAPOR DEPOSITION SYSTEM WITH DOPANT BYPASS 审中-公开
标题翻译：与旁路用于掺杂的物质的亚常压化学气相沉积系统
公开(公告)号：EP1078112A1
公开(公告)日：2001-02-28
申请号：EP99920015.7
申请日：1999-04-23
申请人： APPLIED MATERIALS, INC.
发明人： XIA, Li-Qun , YIEH, Ellie
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/455 , C23C16/52 , H01L21/022 , H01L21/02271 , H01L21/31625
摘要： A sub-atmospheric chemical vapor deposition ('SACVD') system with a bypass from a dopant source to an exhaust system and related methods and devices. The flow of dopant may be established by dumping the dopant flow directly to the foreline of a vacuum exhaust system of an SACVD system, rather than flowing the dopant through the chamber. Establishing the dopant flow in this manner prior to the deposition of a silicon glass film on a substrate allows the initial portion of the silicon glass film to be doped at a higher level. Prior apparatus resulted in a dopant-deficient region of silicon glass formed before the dopant was fully flowing. In one embodiment, a doped silicon glass film is used as a dopant source for a semiconductor material, in another embodiment, a multi-layer doped silicon glass film achieves superior reflow.

7. 发明公开

EP1794784A1 METHOD TO DEPOSIT FUNCTIONALLY GRADED DIELECTRIC FILMS VIA CHEMICAL VAPOR DEPOSITION USING VISCOUS PRECURSORS 审中-公开
标题翻译： METHOD FOR研究生FUNCTIONAL沉积电介质膜关于化学气相沉积粘滞前兆
公开(公告)号：EP1794784A1
公开(公告)日：2007-06-13
申请号：EP05792661.0
申请日：2005-08-29
申请人： APPLIED MATERIALS, INC.
发明人： PADHI, Deenesh , PARK, Sohyun , BALASUBRAMANIAN, Ganesh , ROCHA-ALVAREZ, Juan Carlos , XIA, Li-Qun , WITTY, Derek, R. , M'SAAD, Hichem
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
CPC分类号： H01L21/31633 , C23C16/029 , C23C16/401 , C23C16/45523 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/76841
摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

8. 发明公开

EP1504138A2 METHOD FOR USING LOW DIELECTRIC CONSTANT FILM BY ELECTRON BEAM 审中-公开
标题翻译：方法固化介电常数薄膜具有低电子
公开(公告)号：EP1504138A2
公开(公告)日：2005-02-09
申请号：EP03731108.1
申请日：2003-05-07
申请人： Applied Materials, Inc.
发明人： MOGHADAM, Farhad D. , ZHAO, Jun , WEIDMAN, Timothy , ROBERTS, Rick J. , XIA, Li-Qun , DEMOS, Alexandros T. , ZHU, Wen H. , HUANG, Tzu-Fang , LI, Lihua , YIEH, Ellie Y. , ZHENG, Yi , NEMANI, Srinivas D. , HOLLAR, Eric , YIM, Kang Sub , NGUYEN, Son Van , D'CRUZ, Lester A. , KIM, Troy , SUGIARTO, Dian , LEE, Peter Wai-Man , M'SAAD, Hichem , TAM, Melissa M.
IPC分类号： C23C16/30
CPC分类号： H01L21/02126 , B05D1/60 , B05D3/068 , C23C16/401 , C23C16/56 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31058 , H01L21/3122 , H01L21/3125
摘要： A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen in a chemical vapor deposition chamber. The method further includes exposing the low dielectric constant film to an electron beam at conditions sufficient to increase the hardness of the low dielectric constant film.

9. 发明公开

EP1078396A1 A TWO-STEP BOROPHOSPHOSILICATE GLASS DEPOSITION PROCESS AND RELATED DEVICES AND APPARATUS 审中-公开
标题翻译：两步分离过程FOR硼磷硅及相关组件
公开(公告)号：EP1078396A1
公开(公告)日：2001-02-28
申请号：EP99921563.5
申请日：1999-04-29
申请人： Applied Materials, Inc.
发明人： XIA, Li-Qun , YIEH, Ellie , GALIANO, Maria , CAMPANA, Francimar , CHANDRAN, Shankar , CONTI, Richard, Anthony , RESTAINO, Darryl
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02129 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02271 , H01L21/31625
摘要： A method for forming a BPSG film from a two-step deposition process and related apparatus and devices. A conformal layer of BPSG is deposited on a substrate. A more stable layer of BPSG is deposited at a higher deposition rate over the conformal layer. The method is suitable for filling trenches at least as narrow as 0.06 microns with aspect ratios of at least 5.5:1.

10. 发明公开

EP1604394A2 METHOD OF IMPROVING INTERLAYER ADHESION 审中-公开
标题翻译：方法提高层间的责任
公开(公告)号：EP1604394A2
公开(公告)日：2005-12-14
申请号：EP04718082.3
申请日：2004-03-05
申请人： APPLIED MATERIALS, INC.
发明人： SCHMITT, Francimar, C. , XIA, Li-Qun , NGUYEN, Son Van , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer (112) on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer (110) adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

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