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1. 发明公开

EP1794784A1 METHOD TO DEPOSIT FUNCTIONALLY GRADED DIELECTRIC FILMS VIA CHEMICAL VAPOR DEPOSITION USING VISCOUS PRECURSORS 审中-公开
标题翻译： METHOD FOR研究生FUNCTIONAL沉积电介质膜关于化学气相沉积粘滞前兆
公开(公告)号：EP1794784A1
公开(公告)日：2007-06-13
申请号：EP05792661.0
申请日：2005-08-29
申请人： APPLIED MATERIALS, INC.
发明人： PADHI, Deenesh , PARK, Sohyun , BALASUBRAMANIAN, Ganesh , ROCHA-ALVAREZ, Juan Carlos , XIA, Li-Qun , WITTY, Derek, R. , M'SAAD, Hichem
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
CPC分类号： H01L21/31633 , C23C16/029 , C23C16/401 , C23C16/45523 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/76841
摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

2. 发明申请

WO2021206898A1 BOTTOM PURGE FOR SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
公开(公告)号：WO2021206898A1
公开(公告)日：2021-10-14
申请号：PCT/US2021/023568
申请日：2021-03-23
申请人： APPLIED MATERIALS, INC.
发明人： PATHAK, Nitin , PRABHAKAR, Vinay , RAMAMURTHI, Badri N. , KALSEKAR, Viren , NGUYEN, Tuan A. , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/67 , H01L21/677 , H01L21/687 , C23C16/455 , B25J15/00 , B25J15/06 , B25J11/00
摘要： Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports, and each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may include an end effector coupled with the rotatable shaft. The end effector may include a central hub defining a central aperture fluidly coupled with a purge source. The end effector may also include a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports.

3. 发明申请

WO2019203975A1 HEATED CERAMIC FACEPLATE 审中-公开
公开(公告)号：WO2019203975A1
公开(公告)日：2019-10-24
申请号：PCT/US2019/022958
申请日：2019-03-19
申请人： APPLIED MATERIALS, INC
发明人： ROCHA-ALVAREZ, Juan Carlos , QUACH, David H.
IPC分类号： H01L21/67 , H01L21/683 , H01L23/00
摘要： An apparatus for distributing a gas within a process chamber is disclosed. The apparatus has a body formed from a distribution portion surrounded by a coupling portion. A heater is disposed within the distribution portion to heat the body to an elevated temperature. A bridge extends between the coupling portion and the distribution portion. The bridge limits heat transfer between the distribution portion and the coupling portion.

4. 发明申请

WO2019182866A1 THERMALLY STABLE FLOW METERS FOR PRECISION FLUID DELIVERY 审中-公开
公开(公告)号：WO2019182866A1
公开(公告)日：2019-09-26
申请号：PCT/US2019/022279
申请日：2019-03-14
申请人： APPLIED MATERIALS, INC.
发明人： SRIVASTAVA, Shailendra , ALAM, Syed , JORAPUR, Nikhil Sudhindrarao , BENJAMIN RAJ, Daemian Raj , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/67
摘要： The present disclosure relates to a fluid delivery apparatus for deposition chambers. The fluid delivery device includes a fluid flow meter. The fluid flow meter is enclosed in an insulated box. An intake is provided on the insulated box for providing a forced cooling gas flow over the fluid flow meter. An exhaust is provided on the insulated box from which the forced cooling gas exits the insulated box.

5. 发明申请

WO2018048842A1 SEMICONDUCTOR PROCESS EQUIPMENT 审中-公开
标题翻译：半导体工艺设备
公开(公告)号：WO2018048842A1
公开(公告)日：2018-03-15
申请号：PCT/US2017/050191
申请日：2017-09-06
申请人： APPLIED MATERIALS, INC.
发明人： JANAKIRAMAN, Karthik , PONNEKANTI, Hari K. , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/67 , H01L21/677
摘要： A substrate transport system is disclosed and includes a chamber having an interior wall, a planar motor disposed on the interior wall, and a substrate carrier magnetically coupled to the planar motor. The substrate carrier comprises a base and a substrate supporting surface coupled to a support member extending from the base in a cantilevered orientation.
摘要翻译：公开了一种基板传送系统，其包括具有内壁的腔室，设置在内壁上的平面电机，以及磁耦合到平面电机的基板载体。基板载体包括基座和基板支撑表面，该基座和基板支撑表面耦合到以悬臂方向从基座延伸的支撑构件。

6. 发明申请

WO2017165031A1 ALUMINA LAYER FORMATION ON ALUMINUM SURFACE TO PROTECT ALUMINUM PARTS 审中-公开
标题翻译：在铝表面形成氧化铝层以保护铝部件
公开(公告)号：WO2017165031A1
公开(公告)日：2017-09-28
申请号：PCT/US2017/018567
申请日：2017-02-20
申请人： APPLIED MATERIALS, INC.
发明人： DUAN, Ren-Guan , ZHOU, Jianhua , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/324
CPC分类号： C23C18/1295 , C22F1/04 , C23C18/04 , C23C18/1279 , C23G1/125
摘要： Implementations described herein generally relate to materials and coatings, and more specifically to materials and coatings for aluminum and aluminum-containing chamber components. In one implementation, a process is provided. The process comprises exposing an aluminum-containing component to a moisture thermal treatment process and exposing the aluminum-containing component to a thermal treatment process. The moisture thermal treatment process comprises exposing the aluminum-containing component to an environment having a moisture content from about 30% to about 100% at a first temperature from about 30 to about 100 degrees Celsius. The thermal treatment process comprises heating the aluminum-containing component to a second temperature from about 200 degrees Celsius to about 550 degrees Celsius to form an alumina layer on the at least one surface of the aluminum-containing component.
摘要翻译：这里描述的实施方式总体上涉及材料和涂层，并且更具体地涉及用于铝和铝的腔室部件的材料和涂层。在一个实现中，提供了一个过程。该方法包括将含铝组分暴露于湿气热处理工艺并将含铝组分暴露于热处理工艺。湿气热处理工艺包括在约30至约100摄氏度的第一温度下将含铝组分暴露于水分含量为约30％至约100％的环境。热处理工艺包括将含铝组分加热至约200摄氏度至约550摄氏度的第二温度，以在含铝组分的至少一个表面上形成氧化铝层。

7. 发明申请

WO2016032628A1 HIGH TEMPERATURE ELECTROSTATIC CHUCKING WITH DIELECTRIC CONSTANT ENGINEERED IN-SITU CHARGE TRAP MATERIALS 审中-公开
标题翻译：具有介电常数工程原位充电材料的高温静电切割
公开(公告)号：WO2016032628A1
公开(公告)日：2016-03-03
申请号：PCT/US2015/039296
申请日：2015-07-07
申请人： APPLIED MATERIALS, INC.
发明人： KULSHRESHTHA, Prashant Kumar , LEE, Kwangduk Douglas , KIM, Bok Hoen , YE, Zheng John , BEHERA, Swayambhu Prasad , BALASUBRAMANIAN, Ganesh , ROCHA-ALVAREZ, Juan Carlos , CHEN, Jian J.
IPC分类号： H01L21/683 , H01L21/324
CPC分类号： H01L21/6833
摘要： Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
摘要翻译：公开了用于增加击穿电压的方法和装置的技术，同时在处理室中大大降低了静电卡盘在超过约300摄氏度的温度下的电压泄漏。

8. 发明申请

WO2015100292A1 PHOTO-ASSISTED DEPOSITION OF FLOWABLE FILMS 审中-公开
标题翻译：照片辅助流动膜沉积
公开(公告)号：WO2015100292A1
公开(公告)日：2015-07-02
申请号：PCT/US2014/072065
申请日：2014-12-23
申请人： APPLIED MATERIALS, INC.
发明人： UNDERWOOD, Brian Saxton , MALLICK, Abhijit Basu , SRINIVASAN, Mukund , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/482 , C23C16/56 , H01L21/02529 , H01L21/02532 , H01L21/02658 , H01L21/02664 , H01L21/324
摘要： A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.
摘要翻译：描述了一种用于形成可流动膜的方法和装置。该方法包括向含有基底的处理室提供无氧的前体气体混合物。无氧前体气体通过在处理室中暴露于UV辐射而被活化。鼓励由UV激活产生的分子片段沉积在基底上以在基底上形成可流动的膜。衬底可以被冷却以促进沉积。可以通过加热和/或通过进一步暴露于UV辐射来使膜硬化。

9. 发明申请

WO2014158320A8 WET CLEANING OF CHAMBER COMPONENT 审中-公开
公开(公告)号：WO2014158320A8
公开(公告)日：2014-10-02
申请号：PCT/US2014/012296
申请日：2014-01-21
申请人： APPLIED MATERIALS, INC.
发明人： DUAN, Ren-Guan , ROCHA-ALVAREZ, Juan Carlos , BALUJA, Sanjeev , RAJ, Daemian , TUREVSKY, Inna
IPC分类号： C11D7/28 , C11D7/32 , H01L21/306
摘要： Embodiments of the invention generally provide methods for cleaning a UV processing chamber component. In one embodiment, a method for cleaning a UV processing chamber component includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution for about 1 to 10 minutes. The cleaning solution comprises about 5% by weight to about 60% weight of NH 4 F and about 0.5% by weight to about 10% by weight of HF. The method also includes polishing the chamber component. In another embodiment, a method of cleaning a processing chamber component fabricated from quartz includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 36% by weight of NH 4 F and about 5% by weight of HF for about 3 minutes. The method also includes applying an ultrasonic power to the cleaning solution, and mechanically polishing the chamber component.

10. 发明申请

WO2014158253A2 THERMAL TREATED SANDWICH STRUCTURE LAYER TO IMPROVE ADHESIVE STRENGTH 审中-公开
标题翻译：热处理三层结构层提高粘合强度
公开(公告)号：WO2014158253A2
公开(公告)日：2014-10-02
申请号：PCT/US2013/075143
申请日：2013-12-13
申请人： APPLIED MATERIALS, INC.
发明人： DUAN, Ren-Guan , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/56 , H01L21/20 , H01L21/02 , H01L21/324
CPC分类号： H01L21/68757 , B08B9/00 , C23C16/4404 , C23C16/4405 , H01J37/32477 , H01J37/32862 , Y10T428/24942
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a processing chamber. The processing chamber includes a substrate support assembly disposed in the bottom portion of the processing chamber, a gas distribution system configured to provide gas into the processing chamber above the substrate support assembly, a removable liner layer the chamber interior walls. An adhesion layer is disposed on the substrate support. A protective layer is disposed on the adhesion layer. Pluralities of intermediate layers are created between the substrate support layer and the adhesion layer, and the adhesion layer and the protective layer through a thermal treatment in a non-reactive environment.
摘要翻译：提供了一种用于清洁处理室的方法和设备。在一个实施例中，提供了包括远程等离子体源和处理室的处理室。处理室包括设置在处理室的底部中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理室中的气体分配系统，室内壁的可拆卸衬垫层。粘合层设置在基板支撑件上。保护层设置在粘合层上。通过在非反应性环境中的热处理，在基板支撑层和粘合层之间产生多个中间层，并且粘附层和保护层。

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