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1. 发明授权

US10424463B2 Oxide etch selectivity systems and methods 有权
公开(公告)号：US10424463B2
公开(公告)日：2019-09-24
申请号：US15131256
申请日：2016-04-18
申请人： Applied Materials, Inc.
发明人： Lin Xu , Zhijun Chen , Anchuan Wang , Son T. Nguyen
IPC分类号： C23C16/40 , H01J37/32 , H01L21/311 , H01L21/3065 , H01L21/3213 , C23C16/455 , C23C16/50 , H01L21/67
摘要： Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

2. 发明授权

US09449850B2 Processing systems and methods for halide scavenging 有权
公开(公告)号：US09449850B2
公开(公告)日：2016-09-20
申请号：US14703299
申请日：2015-05-04
申请人： Applied Materials, Inc.
发明人： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur
IPC分类号： H01L21/324 , H01L21/3065 , H01L21/306 , H01L21/311
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

3. 发明授权

US09437451B2 Radical-component oxide etch 有权
公开(公告)号：US09437451B2
公开(公告)日：2016-09-06
申请号：US14703333
申请日：2015-05-04
申请人： Applied Materials, Inc.
发明人： Zhijun Chen , Jingchun Zhang , Ching-Mei Hsu , Seung Park , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

4. 发明申请

US20150371865A1 HIGH SELECTIVITY GAS PHASE SILICON NITRIDE REMOVAL 审中-公开
标题翻译：高选择性气相氮化硅去除
公开(公告)号：US20150371865A1
公开(公告)日：2015-12-24
申请号：US14308978
申请日：2014-06-19
申请人： Applied Materials, Inc.
发明人： Zhijun Chen , Nitin K. Ingle , Anchuan Wang
IPC分类号： H01L21/311 , C09K13/08
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244
摘要： A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while retaining silicon, such as polysilicon.
摘要翻译：描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用部分远程等离子体激发的气相蚀刻。远程等离子体激发含氟前体，产生的等离子体流出物流入基板处理区域。含氢前体，例如水同时流入基板处理区域而没有等离子体激发。等离子体流出物与组合与氮化硅反应的衬底处理区域中的不含氢的前体组合。等离子体流出物与图案化的异质结构反应以选择性地去除氮化硅，同时保留硅，例如多晶硅。

5. 发明授权

US09202708B1 Doped silicon oxide etch 有权
标题翻译：掺杂氧化硅蚀刻
公开(公告)号：US09202708B1
公开(公告)日：2015-12-01
申请号：US14523647
申请日：2014-10-24
申请人： Applied Materials, Inc.
发明人： Zhijun Chen , Sang-jin Kim , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove two separate regions of silicon oxide at distinct etch rates. The methods may be used to remove doped silicon oxide faster than undoped silicon oxide or more lightly-doped silicon oxide. The relative humidity in the substrate processing region may be low during the etch process to increase the etch selectivity of the doped silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括使用在远程等离子体中形成的等离子体流出物的气相蚀刻。远程等离子体与含氧前体组合起来激发含氟前体。远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽或醇组合。该组合与图案化的异质结构反应以以不同的蚀刻速率去除两个分离的氧化硅区域。该方法可以用于比未掺杂的氧化硅或更多的轻掺杂的氧化硅更快地除去掺杂的氧化硅。在蚀刻工艺期间，衬底处理区域中的相对湿度可能较低，以增加掺杂氧化硅的蚀刻选择性。

6. 发明申请

US20150332930A1 PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING 审中-公开
公开(公告)号：US20150332930A1
公开(公告)日：2015-11-19
申请号：US14808904
申请日：2015-07-24
申请人： Applied Materials, Inc.
发明人： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/3105 , H01L21/268 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

7. 发明授权

US09153442B2 Processing systems and methods for halide scavenging 有权
公开(公告)号：US09153442B2
公开(公告)日：2015-10-06
申请号：US14248143
申请日：2014-04-08
申请人： APPLIED MATERIALS, INC.
发明人： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur
IPC分类号： H01L21/263 , H01L21/67 , H01L21/02 , H01L21/677 , H01L21/306 , H01L21/3065 , H01L21/683 , H01J37/32 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

8. 发明授权

US09111877B2 Non-local plasma oxide etch 有权
标题翻译：非局部等离子体氧化物蚀刻
公开(公告)号：US09111877B2
公开(公告)日：2015-08-18
申请号：US13790668
申请日：2013-03-08
申请人： Applied Materials, Inc.
发明人： Zhijun Chen , Seung Park , Mikhail Korolik , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31122 , H01J37/32357 , H01J37/32422 , H01J37/3244
摘要： A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.
摘要翻译：描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物有缺陷到基板处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。因此，反应物在衬底处于升高的温度下产生蚀刻，具有高氧化钛选择性的图案化异质结构。替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

9. 发明授权

US09093371B2 Processing systems and methods for halide scavenging 有权
公开(公告)号：US09093371B2
公开(公告)日：2015-07-28
申请号：US14246978
申请日：2014-04-07
申请人： APPLIED MATERIALS, INC.
发明人： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur
IPC分类号： B08B3/12 , B08B6/00 , H01L21/302 , H01L21/461 , H01L21/263 , H01L21/02 , H01L21/677 , H01L21/306 , H01L21/3065 , H01L21/67 , H01L21/683 , H01J37/32 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

10. 发明申请

US20140273489A1 PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING 审中-公开
公开(公告)号：US20140273489A1
公开(公告)日：2014-09-18
申请号：US14246952
申请日：2014-04-07
申请人： APPLIED MATERIALS, INC.
发明人： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur
IPC分类号： H01L21/67 , H01L21/3065
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

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