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1. 发明授权

US09887096B2 Differential silicon oxide etch 有权
公开(公告)号：US09887096B2
公开(公告)日：2018-02-06
申请号：US14714050
申请日：2015-05-15
申请人： Applied Materials, Inc.
发明人： Seung H. Park , Yunyu Wang , Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , H01L21/3065 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01L21/3065
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

2. 发明授权

US09842744B2 Methods for etch of SiN films 有权
公开(公告)号：US09842744B2
公开(公告)日：2017-12-12
申请号：US15155596
申请日：2016-05-16
申请人： Applied Materials, Inc.
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/311 , H01J37/32 , C09K13/00 , H01L21/3065 , H01L21/3213 , H01L21/67 , H01L21/02
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

3. 发明授权

US09449845B2 Selective titanium nitride etching 有权
标题翻译：选择性氮化钛蚀刻
公开(公告)号：US09449845B2
公开(公告)日：2016-09-20
申请号：US14584099
申请日：2014-12-29
申请人： Applied Materials, Inc.
发明人： Jie Liu , Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Seung Park , Zhijun Chen , Ching-Mei Hsu
IPC分类号： H01L21/302 , H01L21/3213 , H01J37/32
CPC分类号： H01L21/32136 , H01J37/32357
摘要： Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
摘要翻译：描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

4. 发明申请

US20150126039A1 ETCH SUPPRESSION WITH GERMANIUM 有权
标题翻译：与德国的灭活剂
公开(公告)号：US20150126039A1
公开(公告)日：2015-05-07
申请号：US14269544
申请日：2014-05-05
申请人： Applied Materials, Inc.
发明人： Mikhail Korolik , Nitin K. Ingle , Jingchun Zhang , Anchuan Wang , Jie Liu
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J2237/3346
摘要： Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X
摘要翻译：描述了相对于硅锗选择性地蚀刻硅的方法。该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。对于X

5. 发明授权

US08921234B2 Selective titanium nitride etching 有权
标题翻译：选择性氮化钛蚀刻
公开(公告)号：US08921234B2
公开(公告)日：2014-12-30
申请号：US13791125
申请日：2013-03-08
申请人： Applied Materials, Inc.
发明人： Jie Liu , Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Seung Park , Zhijun Chen , Ching-Mei Hsu
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/32136 , H01J37/32357
摘要： Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
摘要翻译：描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

6. 发明申请

US20140134842A1 DRY ETCH PROCESS 有权
标题翻译：干蚀工艺
公开(公告)号：US20140134842A1
公开(公告)日：2014-05-15
申请号：US13832802
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： Jingchun Zhang , Nitin K. Ingle , Anchuan Wang
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3347 , H01L21/3065 , H01L21/31122 , H01L21/32136 , H01L21/32137
摘要： A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench bat thinner deep within the trench. The methods described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where it would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench.
摘要翻译：通过沉积或形成非常均匀的钝化层来实现在高纵横比沟槽中衬垫材料的保形干蚀刻的方法，所述不均匀钝化层在沟槽内深沟槽槽的开口处更厚。本文描述的方法在形成不均匀钝化层之后使用选择性蚀刻。选择性蚀刻蚀刻衬垫材料比钝化材料更快。非均匀钝化层抑制在沟槽顶部附近的选择性蚀刻的蚀刻速率（否则其将是最快的），并且使蚀刻在沟槽中开始更深（否则其将是最慢的）。该方法也可用于从沟槽内均匀地去除大量材料。

7. 发明授权

US08642481B2 Dry-etch for silicon-and-nitrogen-containing films 有权
标题翻译：含硅和氮的膜的干蚀刻
公开(公告)号：US08642481B2
公开(公告)日：2014-02-04
申请号：US13745251
申请日：2013-01-18
申请人： Applied Materials, Inc.
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

8. 发明授权

US11637002B2 Methods and systems to enhance process uniformity 有权
公开(公告)号：US11637002B2
公开(公告)日：2023-04-25
申请号：US14554250
申请日：2014-11-26
申请人： Applied Materials, Inc.
发明人： Saravjeet Singh , Alan Tso , Jingchun Zhang , Zihui Li , Hanshen Zhang , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01L21/67
摘要： A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

9. 发明授权

US11239061B2 Methods and systems to enhance process uniformity 有权
公开(公告)号：US11239061B2
公开(公告)日：2022-02-01
申请号：US15581446
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Saravjeet Singh , Alan Tso , Jingchun Zhang , Zihui Li , Hanshen Zhang , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01L21/67
摘要： A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

10. 发明授权

US09576809B2 Etch suppression with germanium 有权
标题翻译：用锗蚀刻抑制
公开(公告)号：US09576809B2
公开(公告)日：2017-02-21
申请号：US14269544
申请日：2014-05-05
申请人： Applied Materials, Inc.
发明人： Mikhail Korolik , Nitin K. Ingle , Jingchun Zhang , Anchuan Wang , Jie Liu
IPC分类号： H01L21/461 , H01L21/3065 , H01J37/32
CPC分类号： H01L21/3065 , H01J37/32357 , H01J2237/3346
摘要： Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X
摘要翻译：描述了相对于硅锗选择性地蚀刻硅的方法。该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。对于X

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