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1. 发明申请

US20020090820A1 Tantalum removal during chemical mechanical polishing 失效
标题翻译：化学机械抛光过程中的钽去除
公开(公告)号：US20020090820A1
公开(公告)日：2002-07-11
申请号：US09755717
申请日：2001-01-05
申请人： Applied Materials, Inc.
发明人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.
摘要翻译：本发明一般涉及在化学机械抛光中选择性去除阻挡层的组合物和方法。一方面，用于选择性除去阻挡层的组合物包括至少一种还原剂，来自至少一种过渡金属的离子和水。该组合物还可以包括至少一种用于pH稳定的缓冲液，用于提供初始pH的至少一种pH调节剂，缓蚀剂，磨料颗粒和/或金属螯合剂。在另一个实施方案中，本发明一般涉及在化学机械抛光中去除导电材料层和阻挡层的组合物和方法。一方面，用于去除导电材料层和阻挡层的方法包括将导电材料层选择性组合物施加到抛光垫上，在导电材料层选择性组合物的存在下抛光衬底，施加对抛光垫的阻挡层选择性组合物，并且在阻挡层选择性组合物的存在下研磨衬底。

2. 发明申请

US20020173221A1 Method and apparatus for two-step polishing 审中-公开
标题翻译：两步抛光方法和装置
公开(公告)号：US20020173221A1
公开(公告)日：2002-11-21
申请号：US09808662
申请日：2001-03-14
申请人： Applied Materials, Inc.
发明人： Shijian Li , John White , Lizhong Sun , Stan Tsai
IPC分类号： B24B049/00
CPC分类号： H01L21/3212 , B24B37/042
摘要： Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a method for polishing a substrate including polishing the substrate with an abrasive-free polishing pad until it is substantially planarized and then polishing the substrate with a fixed abrasive polishing pad to remove residual materials disposed thereon. Another aspect of the invention provides a computer readable medium bearing instructions for performing the method described herein. In another aspect, the invention provides a system for processing substrates including a first platen, an abrasive-free polishing pad disposed on the first platen, a second platen, a fixed abrasive polishing pad disposed on the second platen, and a computer based controller configured to cause the system to polish the substrate with an abrasive-free polishing pad; and then to polish the substrate with a fixed abrasive polishing pad to remove residual materials disposed thereon.
摘要翻译：提供了在其上具有含铜材料的基板表面平坦化的方法和装置。一方面，本发明提供了一种用于抛光衬底的方法，包括用无磨料抛光垫抛光衬底，直到其基本上平坦化，然后用固定的研磨抛光垫抛光衬底以除去其上布置的残留材料。本发明的另一方面提供一种具有用于执行本文所述方法的指令的计算机可读介质。另一方面，本发明提供了一种用于处理衬底的系统，包括第一压板，设置在第一压板上的无磨料抛光垫，第二压板，设置在第二压板上的固定研磨抛光垫，以及基于计算机的控制器使系统用无磨料抛光垫抛光衬底; 然后用固定的研磨抛光垫抛光衬底以去除其上放置的残余材料。

3. 发明申请

US20010052500A1 Metal removal system and method for chemical mechanical polishing 审中-公开
标题翻译：金属去除系统和化学机械抛光方法
公开(公告)号：US20010052500A1
公开(公告)日：2001-12-20
申请号：US09882647
申请日：2001-06-15
申请人： Applied Materials, Inc.
发明人： Lizhong Sun , Fred C. Redeker
IPC分类号： C02F001/62
CPC分类号： C07D213/74 , C07D239/14 , C07D401/12
摘要： An apparatus and method for removing a metal residue from a process waste stream. In one aspect, an apparatus for a waste stream treatment assembly is provided which includes a waste stream metal removal reactor having at least one inlet and at least one outlet, a fluid delivery system connected to the at least one inlet of the waste stream metal removal reactor and a chelating agent supply source, and a filtering member disposed in communication with the at least one outlet of the waste stream metal removal reactor. In another aspect, a method is provided which includes adding a chelating agent to a process waste stream to form a metal complex, and removing the metal complex from the process waste stream prior to disposal.
摘要翻译：一种从工艺废料流中除去金属残渣的装置和方法。在一个方面，提供了一种用于废物流处理组件的装置，其包括具有至少一个入口和至少一个出口的废物流金属去除反应器，流体输送系统连接到废物流金属去除的至少一个入口反应器和螯合剂供应源，以及与废物流金属去除反应器的至少一个出口连通设置的过滤构件。在另一方面，提供了一种方法，其包括向处理废物流中加入螯合剂以形成金属络合物，以及在处理之前从工艺废物流中除去金属络合物。

4. 发明申请

US20040116052A1 Methods for reducing delamination during chemical mechanical polishing 失效
标题翻译：在化学机械抛光过程中减少分层的方法
公开(公告)号：US20040116052A1
公开(公告)日：2004-06-17
申请号：US10678906
申请日：2003-10-03
申请人： APPLIED MATERIALS, INC.
发明人： Yufei Chen , Lizhong Sun , Doohan Lee , Wei-Yung Hsu
IPC分类号： B24B049/00
CPC分类号： B24B37/042 , B24B49/006 , H01L21/02074 , H01L21/3212 , Y02P70/605
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。一方面，提供了一种处理衬底的方法，包括在具有旋转载体头和可旋转压板的抛光装置中定位其上具有导电材料的衬底，其中衬底设置在旋转载体头部中，并且压板具有设置在其上的抛光制品，以第一载体头旋转速率旋转第一载体头并以第一压板旋转速率旋转压板，使基板和抛光制品接触，将第一载体头旋转速率加速到第二载体头旋转速度并将第一压板转速加速到第二压板旋转速率，并以第二承载头转速和第二压板旋转速率抛光衬底。

5. 发明申请

US20030010648A1 Electrochemically assisted chemical polish 失效
标题翻译：电化学辅助化学抛光
公开(公告)号：US20030010648A1
公开(公告)日：2003-01-16
申请号：US09905315
申请日：2001-07-13
申请人： Applied Materials, Inc.
发明人： Lizhong Sun , Shijian Li
IPC分类号： B23H011/00 , B23H003/00 , C25F003/00 , H05K003/07 , B23H005/00 , C25F007/00 , B23H007/00 , B23H009/00 , H01L021/00
CPC分类号： B24B37/24 , B23H3/00 , B23H5/08 , C25F3/16 , C25F7/00
摘要： A method of chemically polishing a metal layer on a substrate is provided. The metal layer is chemically polished using an electrochemical polishing (ECP) process. In the ECP process, the substrate is immersed in a chemical polishing solution including a surfactant. The surfactant in the polishing solution covers the surface of the substrate such that only topographic portions of the substrate surface are exposed to the chemical polishing solution. Thereafter, an electrical potential applied to the substrate removes topographic portions of the substrate that are exposed to the polishing solution.
摘要翻译：提供了一种在基板上化学抛光金属层的方法。使用电化学抛光（ECP）工艺对金属层进行化学抛光。在ECP工艺中，将衬底浸入包括表面活性剂的化学抛光溶液中。抛光溶液中的表面活性剂覆盖基材的表面，使得只有基材表面的地形部分暴露于化学抛光溶液。此后，施加到基板的电位移除暴露于抛光溶液的基板的形貌部分。

6. 发明申请

US20020068454A1 Method and composition for the removal of residual materials during substrate planarization 审中-公开
标题翻译：在衬底平面化期间去除残留材料的方法和组成
公开(公告)号：US20020068454A1
公开(公告)日：2002-06-06
申请号：US09729132
申请日：2000-12-01
申请人： Applied Materials, Inc.
发明人： Lizhong Sun , Stan Tsai , Shijian Li
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： C09G1/02
摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material
摘要翻译：一种用于平坦化衬底的方法，组合物和计算机可读介质。一方面，组合物包括一种或多种螯合剂和至少一种过渡金属的离子，一种或多种表面活性剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。该方法包括使用包含一种或多种螯合剂和至少一种过渡金属的离子的组合物平面化底物。一方面，该方法包括处理设置在抛光垫上的衬底，包括执行第一抛光工艺以基本上除去含铜材料，执行第二抛光工艺以去除剩余的含铜材料，所述第二抛光工艺包括递送CMP组合物将抛光垫与CMP组合物原位混合至少一种过渡金属的一种或多种螯合剂和离子，并从基材表面除去残留的含铜材料。本发明还提供了一种用于平坦化衬底表面的指令的计算机可读介质，当由一个或多个处理器执行时，所述指令被布置成使一个或多个处理器控制系统执行抛光所述衬底以基本上去除形成的含铜材料在其上并用包含一种或多种螯合剂和至少一种过渡金属的离子的CMP组合物抛光衬底以除去残留的含铜材料

7. 发明申请

US20030121797A1 ELECTRO-CHEMICAL PLATING WITH REDUCED THICKNESS AND INTEGRATION WITH CHEMICAL MECHANICAL POLISHER INTO A SINGLE PLATFORM 失效
标题翻译：具有减小厚度的电化学镀层和与化学机械抛光机一体化成单个平台
公开(公告)号：US20030121797A1
公开(公告)日：2003-07-03
申请号：US09770559
申请日：2001-01-26
申请人： Applied Materials, Inc.
发明人： Shijian Li , Stan D. Tsai , Lizhong Sun
IPC分类号： B23H003/00
CPC分类号： B24B37/32 , B24B37/046 , C25D17/001 , H01L21/2885 , H01L21/3212
摘要： An apparatus is provided for depositing and polishing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a basin, a cover, a permeable disc, an anode and a polishing head. The permeable disc is disposed in the basin between the cover and the basin's bottom. The cover has an aperture disposed therein that includes a plurality of pins. The pins extend radially into the aperture and are adapted to support the substrate. The anode is disposed in the basin between the disc and the bottom of the basin. The polishing head is adapted to retain the substrate during processing and includes a retaining ring. The retaining ring has a plurality of grooves disposed therein that mate with the pins when the polishing head is disposed in the aperture. When the substrate is biased via the pins, the potential between the substrate and the anode causes material to be deposited on the substrate's surface.
摘要翻译：提供了一种用于在衬底上沉积和抛光材料层的装置。在一个实施例中，提供了一种装置，其包括盆，盖，可渗透盘，阳极和抛光头。可渗透盘设置在盖和盆底之间的盆中。盖具有设置在其中的孔，其包括多个销。销钉径向延伸到孔中并且适于支撑基底。阳极设置在圆盘和盆底之间的盆中。抛光头适于在加工过程中保持基底并且包括保持环。保持环具有设置在其中的多个槽，当抛光头设置在孔中时与该销相配合。当衬底经由引脚偏置时，衬底和阳极之间的电势使材料沉积在衬底的表面上。

8. 发明申请

US20030040182A1 Methods and compositions for chemical mechanical polishing 有权
标题翻译：化学机械抛光的方法和组成
公开(公告)号：US20030040182A1
公开(公告)日：2003-02-27
申请号：US09939112
申请日：2001-08-24
申请人： APPLIED MATERIALS, INC.
发明人： Wei-Yung Hsu , Gopalakrishna B. Prabhu , Lizhong Sun , Daniel A. Carl
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , C09G1/04 , H01L21/31053 , H01L21/76229
摘要： Methods and apparatus are provided for planarizing substrate surfaces with selective removal rates and low dishing. One aspect of the method provides for processing a substrate including providing a substrate to a polishing platen having polishing media disposed thereon, providing an abrasive free polishing composition comprising one or more surfactants to the substrate surface to modify the removal rates of the at least the first dielectric material and the second dielectric material, polishing the substrate surface, and removing the second material at a higher removal rate than the first material from a substrate surface. One aspect of the apparatus provides a system for processing substrates including a platen adapted for polishing the substrate with polishing media and a computer based controller configured to perform one aspect of the method.
摘要翻译：提供了用于平坦化基板表面的方法和装置，具有选择性的移除速率和低凹陷。该方法的一个方面提供了一种处理衬底，其包括将衬底提供到其上布置有抛光介质的抛光平台上，提供了一种无研磨抛光组合物，其包含一个或多个表面活性剂至衬底表面，以改变至少第一电介质材料和第二介电材料，抛光衬底表面，并且以比来自衬底表面的第一材料更高的去除速率去除第二材料。该装置的一个方面提供了一种用于处理衬底的系统，其包括适于用抛光介质抛光衬底的压板和被配置为执行该方法的一个方面的基于计算机的控制器。

9. 发明申请

US20030022801A1 Selective removal of tantalum-containing barrier layer during metal CMP title 失效
标题翻译：在金属CMP标题中选择性去除含钽阻挡层
公开(公告)号：US20030022801A1
公开(公告)日：2003-01-30
申请号：US10215521
申请日：2002-08-08
申请人： APPLIED MATERIALS, INC.
发明人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
IPC分类号： C11D001/00
CPC分类号： H01L21/3212 , H01L21/28568 , H01L21/7684
摘要： A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.
摘要翻译：一种用于进行化学机械抛光/平面化的方法，其提供从工件表面高度选择性地快速去除含Ta阻挡层，例如包括嵌入在介电层中的镶嵌型Cu基金属化图案的半导体晶片并且包括含Ta的金属扩散阻挡层，包括在CMP期间将水性液体组合物施加到工件表面或用于执行CMP的抛光垫，所述组合物包含至少一种还原剂以将过渡金属离子还原成低级价态，至少一种pH调节剂，至少一种金属腐蚀抑制剂和水，并且任选地包括至少一种过渡金属（例如Cu和Fe离子）的离子。根据另一个实施方案，含水液体组合物含有Ag离子，并且省略了至少一种还原剂。

10. 发明申请

US20030013387A1 Barrier removal at low polish pressure 失效
标题翻译：在低抛光压力下去除屏障
公开(公告)号：US20030013387A1
公开(公告)日：2003-01-16
申请号：US10187857
申请日：2002-06-27
申请人： Applied Materials, Inc.
发明人： Stan Tsai , Rashid Mavliev , Lizhong Sun , Feng Q. Liu , Liang-Yuh Chen , Ratson Morad
IPC分类号： B24B001/00 , B24B007/19
CPC分类号： B24B37/0056 , B24B37/044 , B24B49/006 , B24B49/16 , C09G1/02 , H01L21/3212
摘要： The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.
摘要翻译：本发明通常提供了用于平坦化具有下层电介质材料的衬底表面的方法和组合物。本发明的方面提供使用低抛光压力，抛光组合物，各种抛光速度，选择性抛光垫和选择性抛光温度的组合的组合物和方法，用于通过化学机械抛光技术去除阻挡材料，具有最小的残留和最小的接缝损伤。通过采用包括在低抛光压力下的顺序CMP以去除沉积的阻挡材料的战略性多步法来实现本发明的方面。

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