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1. 发明授权

US11111583B2 Substrate carrier system utilizing electrostatic chucking to accommodate substrate size heterogeneity 有权
公开(公告)号：US11111583B2
公开(公告)日：2021-09-07
申请号：US15827845
申请日：2017-11-30
申请人： APPLIED MATERIALS, INC.
发明人： Sriskantharajah Thirunavukarasu , Karthik Elumalai , Jen Sern Lew , Mingwei Zhu
IPC分类号： C23C16/458 , H01L21/683 , H01L21/687 , C23C16/30
摘要： Embodiments of improved substrate carriers are provided herein. In some embodiments, a substrate carrier, includes: a multi-layered disk having upper and lower layers formed of a continuous material and an electrostatic electrode structure disposed therebetween, wherein the multi-layered disk is dimensioned and arranged so as to have a nominal dimension which exceeds a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices, and wherein the multi-layered disk is formed symmetrically about a central axis and defines a substantially planar upper surface.

2. 发明授权

US10325790B2 Methods and apparatus for correcting substrate deformity 有权
公开(公告)号：US10325790B2
公开(公告)日：2019-06-18
申请号：US15811575
申请日：2017-11-13
申请人： APPLIED MATERIALS, INC.
发明人： Eng Sheng Peh , Sriskantharajah Thirunavukarasu , Jun-Liang Su , Shoju Vayyapron , Karthik Elumalai , Dimantha Rajapaksa , Arunkumar M Tatti
IPC分类号： H01L21/00 , H01L21/67 , H05B3/00 , H01L21/687 , H01L21/683
摘要： Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate support includes a base having an interior volume formed by walls extending upward from the base; a plurality of infrared lamps disposed within the interior volume; a support plate disposed above the plurality of infrared lamps, wherein the support plate includes a support surface to support a substrate; and a cover plate disposed atop the support plate and having a central opening corresponding to the support surface and an exhaust portion at a periphery of a top surface of the cover plate, wherein the exhaust portion includes a plurality of perforations fluidly coupling a space above the cover plate with an exhaust conduit formed in the cover plate. Embodiments of a showerhead assembly and processing equipment incorporating the inventive substrate support and showerhead assembly are additionally provided herein.

3. 发明授权

US09845533B2 Substrate carrier system utilizing electrostatic chucking to accommodate substrate size heterogeneity 有权
公开(公告)号：US09845533B2
公开(公告)日：2017-12-19
申请号：US14538769
申请日：2014-11-11
申请人： APPLIED MATERIALS, INC.
发明人： Sriskantharajah Thirunavukarasu , Karthik Elumalai , Jen Sern Lew , Mingwei Zhu
IPC分类号： H01L21/683 , C23C16/458 , H01L21/687 , C23C16/30
CPC分类号： C23C16/4586 , C23C16/303 , H01L21/6831 , H01L21/68771
摘要： Embodiments of improved substrate carriers are provided herein. In some embodiments, a substrate carrier, includes: a multi-layered disk having upper and lower layers formed of a continuous material and an electrostatic electrode structure disposed therebetween, wherein the multi-layered disk is dimensioned and arranged so as to have a nominal dimension which exceeds a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices, and wherein the multi-layered disk is formed symmetrically about a central axis and defines a substantially planar upper surface.

4. 发明公开

US20230187215A1 ELECTROSTATIC CHUCK WITH REDUCED CURRENT LEAKAGE FOR HYBRID LASER SCRIBING AND PLASMA ETCH WAFER SINGULATION PROCESS 审中-公开
公开(公告)号：US20230187215A1
公开(公告)日：2023-06-15
申请号：US18106379
申请日：2023-02-06
申请人： Applied Materials, Inc.
发明人： Sai Abhinand , Michael Sorensen , Karthik Elumalai , Dimantha Rajapaksa , Cheng Sun , James S. Papanu , Gaurav Mehta , Eng Sheng Peh , Sri Thirunavukarasu , Onkara Korasiddaramaiah
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/683 , H01L21/82
CPC分类号： H01L21/3065 , H01J37/32715 , H01L21/6833 , H01L21/82 , H01J37/32642 , H01J2237/3341
摘要： Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

5. 发明授权

US11600492B2 Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process 有权
公开(公告)号：US11600492B2
公开(公告)日：2023-03-07
申请号：US16709522
申请日：2019-12-10
申请人： Applied Materials, Inc.
发明人： Sai Abhinand , Michael Sorensen , Karthik Elumalai , Dimantha Rajapaksa , Cheng Sun , James S. Papanu , Gaurav Mehta , Eng Sheng Peh , Sri Thirunavukarasu , Onkara Korasiddaramaiah
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/683 , H01L21/82
摘要： Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

6. 发明授权

US09478697B2 Reusable substrate carrier 有权
标题翻译：可重复使用的基板载体
公开(公告)号：US09478697B2
公开(公告)日：2016-10-25
申请号：US14538766
申请日：2014-11-11
申请人： APPLIED MATERIALS, INC.
发明人： Sriskantharajah Thirunavukarasu , Mingwei Zhu , Karthik Elumalai , Thean Ming Tan , Yong Cao , Daniel Lee Diehl , Nag Patibandla
IPC分类号： A47G29/08 , H01L33/00
CPC分类号： H01L33/0075 , H01L21/68771 , H01L33/0066 , H01L33/0079
摘要： In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis.
摘要翻译：在一些实施例中，用于保持多个基板的基板载体包括由连续材料形成的标称尺寸的盘，其大约是用于制造发光二极管器件的标准基板尺寸的标称尺寸的倍数。在一个实施例中，盘围绕中心轴对称地形成，并且限定了基本平坦的上表面。在盘的上表面中限定第一对凹穴，其中盘和第一对凹穴中的每一个由穿过中心轴线的第一参考平面对分。在盘的上表面中限定第二对凹穴，其中盘和第二对凹穴中的每一个通过穿过中心轴线的第二参考平面对分。

7. 发明授权

US11721583B2 Mainframe-less wafer transfer platform with linear transfer system for wafer processing modules 有权
公开(公告)号：US11721583B2
公开(公告)日：2023-08-08
申请号：US16989746
申请日：2020-08-10
申请人： Applied Materials, Inc.
发明人： Sriskantharajah Thirunavukarasu , Karthik Balakrishnan , Karthik Elumalai , Eng Sheng Peh
IPC分类号： H01L21/78 , H01L21/673 , H01L21/677 , B23K26/364 , H01L23/544 , B23K101/40
CPC分类号： H01L21/78 , B23K26/364 , H01L21/673 , H01L21/67739 , H01L23/544 , B23K2101/40 , H01L2223/5446
摘要： In an embodiment, a semiconductor processing tool for implementing hybrid laser and plasma dicing of a substrate is provided. The semiconductor processing tool comprises a transfer module, where the transfer module comprises a track robot for handling the substrate, and a loadlock attached to the transfer module. In an embodiment, the loadlock comprises a linear transfer system for handling the substrate. In an embodiment, the processing tool further comprises a processing chamber attached to the loadlock, wherein the linear transfer system of the loadlock is configured to insert and remove the substrate from the processing chamber.

8. 发明申请

US20210175086A1 ELECTROSTATIC CHUCK WITH REDUCED CURRENT LEAKAGE FOR HYBRID LASER SCRIBING AND PLASMA ETCH WAFER SINGULATION PROCESS 有权
公开(公告)号：US20210175086A1
公开(公告)日：2021-06-10
申请号：US16709522
申请日：2019-12-10
申请人： Applied Materials, Inc.
发明人： Sai Abhinand , Michael Sorensen , Karthik Elumalai , Dimantha Rajapaksa , Cheng Sun , James S. Papanu , Gaurav Mehta , Eng Sheng Peh , Sri Thirunavukarasu , Onkara Korasiddaramaiah
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/683 , H01L21/82
摘要： Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

9. 发明授权

US09818624B2 Methods and apparatus for correcting substrate deformity 有权
公开(公告)号：US09818624B2
公开(公告)日：2017-11-14
申请号：US15142220
申请日：2016-04-29
申请人： APPLIED MATERIALS, INC.
发明人： Jen Sern Lew , Tuck Foong Koh , Sriskantharajah Thirunavukarasu , Karthik Elumalai , Eng Sheng Peh , Jun-Liang Su
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44 , H01L21/324 , H01L21/67 , F27B9/02 , F27B9/10
CPC分类号： H01L21/3247 , F27B9/02 , F27B9/10 , F27B17/0025 , H01L21/67109 , H01L21/67248 , H01L21/67288
摘要： Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a first process chamber having a first substrate support and a first showerhead, wherein the first substrate support does not include a chucking mechanism; a first heater disposed in the first substrate support to heat a substrate placed on a first support surface of the first substrate support; a second heater configured to heat a process gas flowing through the first showerhead into a first processing volume of the first process chamber; and a second process chamber having a second substrate support, wherein the second substrate support is not heated, and wherein the first process chamber and the cooling chamber are both non-vacuum chambers.

10. 发明授权

US11421316B2 Methods and apparatus for controlling warpage in wafer level packaging processes 有权
公开(公告)号：US11421316B2
公开(公告)日：2022-08-23
申请号：US16584695
申请日：2019-09-26
申请人： APPLIED MATERIALS, INC.
发明人： Prayudi Lianto , Mohamed Rafi , Muhammad Azim Bin Syed Sulaiman , Guan Huei See , Ang Yu Xin Kristy , Karthik Elumalai , Sriskantharajah Thirunavukarasu , Arvind Sundarrajan
IPC分类号： H01L23/48 , H01L23/52 , C23C14/54 , H01L21/67 , H01L23/00
摘要： Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 μm l/s fine pitch patterning.

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