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1. 发明申请

US20040266175A1 Methods and apparatus for forming barrier layers in high aspect ratio vias 有权
公开(公告)号：US20040266175A1
公开(公告)日：2004-12-30
申请号：US10894774
申请日：2004-07-20
申请人： Applied Materials, Inc.
发明人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： H01L021/4763 , H01L021/00 , H01L021/44
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

2. 发明申请

US20040094402A1 Self-ionized and capacitively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电容耦合等离子体
公开(公告)号：US20040094402A1
公开(公告)日：2004-05-20
申请号：US10632882
申请日：2003-07-31
申请人： APPLIED MATERIALS, INC.
发明人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , John C. Forster , Umesh Kelkar
IPC分类号： C23C014/35
CPC分类号： C23C14/345 , C23C14/35 , H01J37/32706 , H01J37/3408 , H01J37/3455
摘要： A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.
摘要翻译：例如，用于溅射诸如钽和氮化钽的沉积材料的DC磁控溅射反应器及其使用的自离子等离子体（SIP）溅射和电容耦合等离子体（CCP）溅射的方法，其一起或交替地被促进，在同一个房间。此外，可以通过电感耦合等离子体（ICP）再溅射来减薄或消除底部覆盖。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 CCP由将电能耦合到等离子体中的RF能量的基座电极提供。 CCP等离子体优选由围绕基座的电磁线圈产生的磁场增强，其作用是限制CCP等离子体并增加其密度。

3. 发明申请

US20030116427A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 审中-公开
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20030116427A1
公开(公告)日：2003-06-26
申请号：US10202778
申请日：2002-07-25
申请人： Applied Materials, Inc.
发明人： Peijun Ding , Zheng Xu , Roderick C. Mosely , Suraj Rengarajan , Nirmalya Maity , Daniel A. Carl , Barry Chin , Paul F. Smith , Darryl Angelo , Anish Tolia , Jianming Fu , Fusen Chen , Praburam Gopalraja , Xianmin Tang , John C. Forster
IPC分类号： C23C014/32 , C23C014/34
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76865 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在同一个房间。此外，底部覆盖可以通过ICP再溅射而变薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。

4. 发明申请

US20040045811A1 Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities 失效
标题翻译：磁约束金属等离子体溅射源，具有离子和中性密度的磁控制
公开(公告)号：US20040045811A1
公开(公告)日：2004-03-11
申请号：US10241114
申请日：2002-09-10
申请人： Applied Materials, Inc.
发明人： Wei D. Wang , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C014/32
CPC分类号： C23C14/345 , C23C14/221 , C23C14/35 , C23C14/352 , H01J37/3266 , H01J37/3402
摘要： A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. A wafer support pedestal within the primary chamber has a planar processing surface for supporting a planar semiconductor wafer. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.
摘要翻译：金属气相沉积反应器包括具有包括天花板和侧壁的主室外壳的初级反应室。主室内的晶片支撑台座具有用于支撑平面半导体晶片的平面处理表面。反应器还包括二次反应器室，该二次反应器室具有二次室外壳和在待沉积在所述半导体晶片上的金属物质形成的次级室内的金属源靶。工艺气体入口将工艺气体提供到靠近所述金属源靶的工作表面的次级室的区域中。连接在所述金属源靶和所述次室壳体的导电部分之间的直流电源具有足够的功率以支持在金属源靶的工作表面附近的工艺气体的离子化，从而形成等离子体，从而将金属离子和中性粒子从金属源目标的工作面。

5. 发明申请

US20040020770A1 Auxiliary electromagnets in a magnetron sputter reactor 失效
标题翻译：磁控溅射反应器中的辅助电磁体
公开(公告)号：US20040020770A1
公开(公告)日：2004-02-05
申请号：US10210953
申请日：2002-08-01
申请人： Applied Materials, Inc.
发明人： Wei D. Wang , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C014/34
CPC分类号： H01J37/3455 , C23C14/046 , C23C14/165 , C23C14/358 , H01J37/3405 , H01L21/76877
摘要： A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnets disposed in back of its two sidewalls. One or two electromagnetic coils are disposed about the processing space between the target and the wafer to either promote extraction of metal ions from the vault, to defocus the ion beam extracted from the vault and focused towards the central axis, or to compensate for a magnetic shield surrounding the reactor.
摘要翻译：一种磁控溅射反应器，其具有复杂形状的靶，其具有围绕面向晶片的中心轴布置的拱顶。拱顶可以是圆柱形的，其轴向磁化的磁体设置在其侧壁的后面，或者是环形的，优选地相对的磁体设置在其两个侧壁的后面。一个或两个电磁线圈围绕目标和晶片之间的处理空间设置，以促进从金库中提取金属离子，从而将从金库中提取的离子束聚焦到中心轴，或者对磁性进行补偿屏蔽围绕反应堆。

6. 发明申请

US20020029093A1 Method and apparatus for depositing a tantalum-containing layer on a substrate 有权
标题翻译：在基板上沉积含钽层的方法和装置
公开(公告)号：US20020029093A1
公开(公告)日：2002-03-07
申请号：US09916412
申请日：2001-07-26
申请人： Applied Materials, Inc.
发明人： Michael Andrew Miller , Peijun Ding , Howard Tang , Tony Chiang , Jianming Fu
IPC分类号： G06F019/00 , C23C014/00 , C23C014/32 , H01L021/44
CPC分类号： H01L21/76843 , C23C14/0641 , C23C14/35 , C30B25/02 , C30B29/38 , H01J37/3408 , H01J37/3441 , H01L21/28568
摘要： A method of forming a tantalum-containing layer on a substrate is described. The tantalum-containing layer is formed using a physical vapor deposition technique wherein a magnetic field in conjunction with an electric field function to confine material sputtered from a tantalum-containing target within a reaction zone of a deposition chamber. The electric field is generated by applying a power of at least 8 kilowatts to the tantalum-containing target. The magnetic field is generated from a magnetron including a first magnetic pole of a first magnetic polarity surrounded by a second magnetic pole of a second magnetic polarity opposite the first magnetic polarity. The first magnetic pole preferably has a magnetic flux at least about 30% greater than a magnetic flux of the second magnetic pole. The tantalum-containing layer deposition method is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is formed.
摘要翻译：描述了在基板上形成含钽层的方法。使用物理气相沉积技术形成含钽层，其中与电场结合的磁场用于限制从沉积室的反应区域内的含钽靶溅射的材料。通过将至少8千瓦的功率施加到含钽靶产生电场。该磁场由磁控管产生，该磁控管包括由与第一磁极性相反的第二磁极的第二磁极包围的第一磁极的第一磁极。第一磁极优选地具有比第二磁极的磁通大至少大约30％的磁通量。含钽层沉积方法与集成电路制造工艺兼容。在一个集成电路制造工艺中，形成互连结构。

7. 发明申请

US20030209422A1 Multiple-step sputter deposition 有权
标题翻译：多步溅射沉积
公开(公告)号：US20030209422A1
公开(公告)日：2003-11-13
申请号：US10143211
申请日：2002-05-09
申请人： Applied Materials, Inc.
发明人： Wei Wang , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C014/32
CPC分类号： C23C14/345 , C23C14/024 , C23C14/3492 , H01J37/3405
摘要： A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target onto a substrate and, during a subsequent forming interval, high frequency power is applied to the target to remove material from at least a portion of the substrate. The sputtering working gas admitted to the chamber may be maintained at a first pressure during the deposition interval and the pressure of the sputtering working gas may be increased to a second pressure during the forming interval.
摘要翻译：一种用于在基板上沉积膜的方法和装置，其包括沉积间隔，其中DC功率被施加到靶以形成第一等离子体，并且材料从靶溅射到衬底上，并且在随后的形成间隔期间，高频功率为施加到靶材以从基材的至少一部分去除材料。允许进入腔室的溅射工作气体可以在沉积间隔期间保持在第一压力，并且溅射工作气体的压力可以在成形间隔期间增加到第二压力。

8. 发明申请

US20040134769A1 Partially filling copper seed layer 有权
标题翻译：部分填充铜籽层
公开(公告)号：US20040134769A1
公开(公告)日：2004-07-15
申请号：US10428476
申请日：2003-05-01
申请人： Applied Materials, Inc.
发明人： Wei D. Wang , Anantha K. Subramani , Jianming Fu , Praburam Gopalraja , Jick M. Yu , Fusen Chen
IPC分类号： H01L021/44 , C23C014/32
CPC分类号： C23C14/046 , C23C14/185 , C23C14/345 , C23C14/3492 , C23C14/541 , H01L21/2855 , H01L21/76844 , H01L21/76865 , H01L21/76877
摘要： A two-step method of filling copper into a high-aspect ratio via or dual-damascene structure. The first step sputters at a low temperature of no more than 100null C. and with at least portions of high wafer bias, thereby filling a lower half of the hole. The initial copper sputtering is preferably performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter resulting overhangs from the corners while depositing deep in the hole. The second step may include either electrochemical plating or sputtering performed at a higher temperature, e.g., at least 200null C. and with lower wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma.
摘要翻译：将铜填充到高纵横比或双镶嵌结构的两步法。第一步在不超过100℃的低温下进行喷射，并且至少部分高晶片偏置，从而填充孔的下半部分。初始铜溅射优选通过多个低水平和高水平基座偏压的周期进行，以在暴露的拐角上沉积铜，并且在沉积在孔中深处时从角部溅射所得到的突出端。第二步可以包括在较高温度例如至少200℃进行的电化学电镀或溅射，并且具有较低的晶片偏置以完成孔填充。在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。

9. 发明申请

US20040222082A1 Oblique ion milling of via metallization 审中-公开
标题翻译：通孔金属化的倾斜离子铣削
公开(公告)号：US20040222082A1
公开(公告)日：2004-11-11
申请号：US10429941
申请日：2003-05-05
申请人： APPLIED MATERIALS, INC.
发明人： Praburam Gopalraja , Xianmin Tang , Jianming Fu , Mark A. Perrin , Jean Yue (Phillip) Wang , Arvind Sundarrajan , Hong Zhang , Jick Yu , Umesh Kelkar , Zheng Xu , Fusen Chen
IPC分类号： C23C014/32 , G21G005/00
CPC分类号： H01J37/34 , C23C14/046 , C23C14/3442 , C23C14/5833 , H01J37/3053 , H01L21/2855 , H01L21/76843 , H01L21/76862 , H01L21/76865
摘要： In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500 eV are directed to the wafer at between 10 and 35null to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.
摘要翻译：结合将金属，特别是铜溅射到晶片中的高纵横比孔中，其中具有在200至1500eV范围内的能量的氩离子或其它颗粒的倾斜离子研磨方法在10 并且与晶片表面成35°的溅射蚀刻材料溅射沉积优先在孔的上角上。铣削可以在溅射沉积室中同时进行沉积，或在其之后或之后在单独的研磨反应器中进行。围绕腔室布置的多个离子源提高了角度均匀性或者轴向地改变径向均匀性或改变入射角。围绕腔室轴线的环形离子源允许等离子体电流回路。阳极层离子源和由铜组成的源是有利的。

10. 发明申请

US20040140196A1 Shaping features in sputter deposition 审中-公开
标题翻译：在溅射沉积中形成特征
公开(公告)号：US20040140196A1
公开(公告)日：2004-07-22
申请号：US10346974
申请日：2003-01-17
申请人： Applied Materials, Inc.
发明人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , Fusen Chen
IPC分类号： C23C014/00 , C23C014/32
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/3492 , C23C14/35 , C23C14/54 , H01L21/2855 , H01L21/76805 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A sputter deposition method is performed in a sputtering chamber having a sputtering target facing a substrate support. A substrate is placed on the support in the chamber and, in a first sputtering stage, a first layer of sputtered material is deposited on the substrate by maintaining a first pressure of a sputtering gas in the chamber, and maintaining the substrate support at a first bias power level. In a second sputtering stage, a second layer of sputtered material is deposited on the substrate by maintaining a second pressure of the sputtering gas that is lower than the first pressure, and maintaining the substrate support at a second bias power level that is higher than the first bias power level.
摘要翻译：在具有面向衬底支撑体的溅射靶的溅射室中进行溅射沉积方法。将衬底放置在腔室中的支撑体上，并且在第一溅射阶段中，通过在腔室中保持溅射气体的第一压力将第一层溅射材料沉积在衬底上，并将衬底支撑件保持在第一偏置功率电平。在第二溅射阶段，通过保持低于第一压力的溅射气体的第二压力将第二溅射材料层沉积在衬底上，并且将衬底支撑件保持在高于第一压力的第二偏压功率水平第一偏置功率电平。

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