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1. 发明申请

WO2003055287A3 PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
公开(公告)号：WO2003055287A3
公开(公告)日：2003-07-03
申请号：PCT/US2002/030407
申请日：2002-09-25
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YIN, Gerald, Zheyao , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

2. 发明申请

WO2003055287A2 PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译：具有超声波射频电极的等离子体反应器被调谐到具有ARCING抑制的等离子体
公开(公告)号：WO2003055287A2
公开(公告)日：2003-07-03
申请号：PCT/US2002/030407
申请日：2002-09-25
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YIN, Gerald, Zheyao , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H05H1/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并包含用于保持半导体工件的工件支撑件的反应室，覆盖所述工件支撑件的顶部电极，包括所述室壁的一部分的电极，RF发电机用于将所述发电机的频率的功率提供给所述顶置电极并且能够将所述腔室内的等离子体保持在期望的等离子体离子密度水平。顶置电极具有电容，使得在所述室中以所述期望等离子体离子密度形成的所述架空电极和等离子体以电极 - 等离子体共振频率共振，所述发生器的所述频率至少接近所述电极 - 等离子体共振频率。反应器还包括形成在面向所述工件支撑件的所述顶置电极的表面上的绝缘层，所述RF发电机和所述架空电极之间的电容绝缘层，以及覆盖并接触所述顶部电极的表面的金属泡沫层，远离所述工件支撑件。

3. 发明公开

EP1440456A1 MERIE PLASMA REACTOR WITH SHOWERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译： WITH RF GAS DISTRIBUTION HEAD导致等离子体MERIE等离子体反应器中，消弧MATCHED
公开(公告)号：EP1440456A1
公开(公告)日：2004-07-28
申请号：EP02789167.0
申请日：2002-09-24
申请人： Applied Materials, Inc.
发明人： HOFFMAN, Daniel, J. , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32183 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaing a plasma within the chamber at a desired plasma ion density level. The overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve circulating magnetic field which stirs the plasma to improve plasma on density districution uniformity.

4. 发明申请

WO2004023510A2 CAPACITIVELY COUPLED PLASMA REACTOR WITH UNIFORM RADIAL DISTRIBUTION OF PLASMA 审中-公开
标题翻译：具有均匀的等离子体辐射分布的电容耦合等离子体反应器
公开(公告)号：WO2004023510A2
公开(公告)日：2004-03-18
申请号：PCT/US2003/027538
申请日：2003-09-03
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Jang, Gyoo , HOFFMAN, Daniel, J. , CARDUCCI, James, D. , BUCHBERGER, Douglas, A., Jr. , MILLER, Matthew, L. , CHIANG, Kang-Lie , DELGADINO, Gerardo, A.
IPC分类号： H01J
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.
摘要翻译：用于处理半导体晶片的等离子体反应器包括限定腔室的侧壁和顶棚顶板，腔室内的工件支撑阴极具有面向天花板的用于支撑半导体工件的工作表面，用于将工艺气体引入室和具有偏置功率频率的RF偏置功率发生器。在工作表面有一个偏置的馈电点，RF导体连接在RF偏置发电机和工作表面的偏置电源馈电点之间。介质套管围绕RF导体的一部分，套筒具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供一种提高工作表面等离子体离子密度均匀性的电抗。根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF耦合环，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以增强等离子体离子密度在工件周边附近。

5. 发明申请

WO2003103004A3 A CATHODE PEDESTAL FOR A PLASMA ETCH REACTOR 审中-公开
公开(公告)号：WO2003103004A3
公开(公告)日：2003-12-11
申请号：PCT/US2003/017477
申请日：2003-06-03
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Jang, Gyoo , LUE, Brian, C. , BUCHBERGER, Douglas, A., Jr. , TAVASSOLI, Hamid , CHAE, Heeyeop , HOFFMAN, Daniel, J. , ISHIKAWA, Tetsuya , KATS, Semyon, L. , CHIANG, Kang-Lie
IPC分类号： H01J37/32
摘要： Various embodiments of the present invention are generally directed to a plasma etch reactor. In one embodiment, the reactor includes a chamber, a pedestal (105) disposed within the chamber, a gas distribution plate disposed within the chamber overlying the pedestal, a ring (115) surrounding the pedestal, and an upper electrically conductive mesh layer (215) and a lower electrically conductive mesh layer (220) disposed within the pedestal. The ring has a raised portion (118). The upper electrically conductive mesh layer is disposed substantially above the lower electrically conductive mesh layer and is substantially the same size as a substrate (110) configured to be disposed on the pedestal. The lower electrically conductive mesh layer is substantially annular in shape and is disposed around the periphery of the upper electrically conductive mesh layer and below the raised portion of the ring.

6. 发明申请

WO2003054913A3 GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR 审中-公开
公开(公告)号：WO2003054913A3
公开(公告)日：2003-07-03
申请号：PCT/US2002/039067
申请日：2002-12-05
申请人： APPLIED MATERIALS, INC.
发明人： KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , YE, Yan , HAGEN, Robert, B. , ZHAO, Xiaoye , KUMAR, Ananda, H. , CHIANG, Kang-Lie , NOORBAKHSH, Hamid , WANG, Shiang-Bau
IPC分类号： H01J37/32
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

7. 发明申请

WO2006055460A2 POST-ETCH TREATMENT TO REMOVE RESIDUES 审中-公开
标题翻译：消除后处理以消除残留
公开(公告)号：WO2006055460A2
公开(公告)日：2006-05-26
申请号：PCT/US2005/041084
申请日：2005-11-10
申请人： APPLIED MATERIALS, INC. , CHIANG, Kang-Lie , CAI, Man-Ping , MA, Shawming , YE, Yan , HSIEH, Peter
发明人： CHIANG, Kang-Lie , CAI, Man-Ping , MA, Shawming , YE, Yan , HSIEH, Peter
CPC分类号： C23F4/00 , B08B7/00 , H01L21/02063 , H01L21/31116 , H01L21/76808 , H01L21/76814
摘要： A method for removing residue from a layer of conductive material on a substrate is provided herein. In one embodiment, the method includes introducing a process gas into a vacuum chamber having a substrate surface with residue from exposure to a fluorine-containing environment. The process gas includes a hydrogen-containing gas. Optionally, the process gas may further include an oxygen-containing or a nitrogen containing gas. A plasma of the process gas is thereafter maintained in the vacuum chamber for a predetermined period of time to remove the residue from the surface. The temperature of the substrate is maintained at a temperature between about 10 degrees Celsius and about 90 degrees Celsius during the plasma step.
摘要翻译：本文提供了用于从基底上的导电材料层除去残余物的方法。在一个实施方案中，该方法包括将工艺气体引入真空室，该真空室具有残留物暴露于含氟环境的基底表面。工艺气体包括含氢气体。任选地，工艺气体还可以包括含氧气体或含氮气体。然后将该工艺气体的等离子体在真空室中保持预定的时间以从表面除去残余物。在等离子体步骤期间，基板的温度保持在约10摄氏度和约90摄氏度之间的温度。

8. 发明申请

WO2003054913A2 GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR 审中-公开
标题翻译：用于等离子体反应器的气体分布板电极
公开(公告)号：WO2003054913A2
公开(公告)日：2003-07-03
申请号：PCT/US2002/039067
申请日：2002-12-05
申请人： APPLIED MATERIALS, INC.
发明人： KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , YE, Yan , HAGEN, Robert, B. , ZHAO, Xiaoye , KUMAR, Ananda, H. , CHIANG, Kang-Lie , NOORBAKHSH, Hamid , WANG, Shiang-Bau
IPC分类号： H01J37/32
CPC分类号： H01J37/3244
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.
摘要翻译：本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管背板，后板和前板结合在一起并形成组件。组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径至少一个孔的流速。此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的，与孔对齐。

9. 发明申请

WO2003036680A1 MERIE PLASMA REACTOR WITH SHOWERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译： MERIE等离子体反应器，带有SHOWERHEAD RF电极，被调谐到等离子体，具有防止抑制
公开(公告)号：WO2003036680A1
公开(公告)日：2003-05-01
申请号：PCT/US2002/030399
申请日：2002-09-24
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32183 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaing a plasma within the chamber at a desired plasma ion density level. The overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve circulating magnetic field which stirs the plasma to improve plasma on density districution uniformity.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以发电机到顶置电极并且能够以期望的等离子体离子密度水平维持腔室内的等离子体。以期望的等离子体离子密度在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。反应器还包括一组围绕晶片表面的等离子体处理区域的MERIE磁体，其产生缓慢循环的磁场，其搅拌等离子体以改善循环磁场，其搅拌等离子体以改善等离子体的密度分布均匀性。

10. 发明公开

EP1825500A2 POST-ETCH TREATMENT TO REMOVE RESIDUES 审中-公开
标题翻译：治疗休息后去除蚀刻
公开(公告)号：EP1825500A2
公开(公告)日：2007-08-29
申请号：EP05851584.2
申请日：2005-11-10
申请人： Applied Materials, Inc.
发明人： CHIANG, Kang-Lie , CAI, Man-Ping , MA, Shawming , YE, Yan , HSIEH, Peter
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/306 , H01L21/768
CPC分类号： C23F4/00 , B08B7/00 , H01L21/02063 , H01L21/31116 , H01L21/76808 , H01L21/76814
摘要： A method for removing residue from a layer of conductive material on a substrate is provided herein. In one embodiment, the method includes introducing a process gas into a vacuum chamber having a substrate surface with residue from exposure to a fluorine-containing environment. The process gas includes a hydrogen-containing gas. Optionally, the process gas may further include an oxygen-containing or a nitrogen containing gas. A plasma of the process gas is thereafter maintained in the vacuum chamber for a predetermined period of time to remove the residue from the surface. The temperature of the substrate is maintained at a temperature between about 10 degrees Celsius and about 90 degrees Celsius during the plasma step.

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