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    • 2. 发明申请
    • GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR
    • 用于等离子体反应器的气体分布板电极
    • WO2003054913A2
    • 2003-07-03
    • PCT/US2002/039067
    • 2002-12-05
    • APPLIED MATERIALS, INC.
    • KATZ, DanBUCHBERGER, Douglas, A., Jr.YE, YanHAGEN, Robert, B.ZHAO, XiaoyeKUMAR, Ananda, H.CHIANG, Kang-LieNOORBAKHSH, HamidWANG, Shiang-Bau
    • H01J37/32
    • H01J37/3244
    • The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.
    • 本发明体现在用于处理半导体晶片的等离子体反应器中,该反应器具有气体分配板,该气体分配板包括在该腔室中的前板和在前板的外侧上的后板,该气体分配板包括邻近的气体歧管 背板,后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列,至少一个通过后板的气体流量控制孔,并在歧管和至少一个孔之间连通,孔口具有确定气体的直径 至少一个孔的流速。 此外,一组圆盘至少大体上与孔阵列一致,并且设置在孔的相应孔内,以限定用于气体流过前板进入腔室的环形气体通道,每个环形气体通道是非限制性的, 与孔对齐。