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    • 3. 发明申请
    • Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path
    • 埋地场环形场效应晶体管(BUF-FET)与注入孔供电路径的电池集成
    • US20130049102A1
    • 2013-02-28
    • US13199381
    • 2011-08-25
    • Madhur BobdeAnup BhallaHamza YilmazLingpeng GuanJun Hu
    • Madhur BobdeAnup BhallaHamza YilmazLingpeng GuanJun Hu
    • H01L29/78H01L21/336
    • H01L29/7802H01L29/0623H01L29/0878H01L29/1095H01L29/36H01L29/407H01L29/66712H01L29/78H01L29/7811
    • This invention discloses a semiconductor power device formed in a semiconductor substrate comprises a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region. The semiconductor power device further comprises a body region, a source region and a gate disposed near the top surface of the semiconductor substrate and a drain disposed at a bottom surface of the semiconductor substrate. The semiconductor power device further comprises source trenches opened into the highly doped region filled with a conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises a buried field ring regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. In an alternate embodiment, the semiconductor power device further comprises doped regions surrounded the sidewalls of the source trenches and doped with a dopant of a same conductivity type of the buried field ring regions to function as a charge supply path.
    • 本发明公开了一种形成在半导体衬底中的半导体功率器件,包括在轻掺杂区域顶部附近的半导体衬底的顶表面附近的高掺杂区域。 半导体功率器件还包括设置在半导体衬底的顶表面附近的体区,源区和栅极以及设置在半导体衬底的底表面处的漏极。 半导体功率器件还包括开口到高掺杂区域的源沟槽,填充有与顶表面附近的源区电接触的导电沟槽填充材料。 半导体功率器件还包括设置在源沟槽下方并且掺杂有与高掺杂区域具有相反导电性的掺杂剂的掩埋场环区域。 在替代实施例中,半导体功率器件还包括围绕源极沟槽的侧壁的掺杂区域,并掺杂有相同导电类型的掩埋场环区域的掺杂剂,用作电荷供应路径。