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1. 发明授权

US07528072B2 Crystallographic preferential etch to define a recessed-region for epitaxial growth 有权
标题翻译：晶体学优选蚀刻以限定用于外延生长的凹陷区域
公开(公告)号：US07528072B2
公开(公告)日：2009-05-05
申请号：US11379408
申请日：2006-04-20
申请人： Antonio Luis Pacheco Rotondaro , Trace Q. Hurd , Elisabeth Marley Koontz
发明人： Antonio Luis Pacheco Rotondaro , Trace Q. Hurd , Elisabeth Marley Koontz
IPC分类号： H01L21/461
CPC分类号： H01L21/30608 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device comprising a gate structure on a semiconductor substrate and a recessed-region in the semiconductor substrate. The recessed-region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
摘要翻译：一种半导体器件，包括半导体衬底上的栅极结构和半导体衬底中的凹陷区域。凹陷区域具有靠近半导体衬底的顶表面的最宽的侧向开口。最宽的侧向开口会削弱门结构。

2. 发明授权

US08049254B2 Semiconductor device with gate-undercutting recessed region 有权
标题翻译：具有栅极切割凹陷区域的半导体器件
公开(公告)号：US08049254B2
公开(公告)日：2011-11-01
申请号：US12408992
申请日：2009-03-23
申请人： Antonio Luis Pacheco Rotondaro , Trace Q. Hurd , Elisabeth Marley Koontz
发明人： Antonio Luis Pacheco Rotondaro , Trace Q. Hurd , Elisabeth Marley Koontz
IPC分类号： H01L29/76
CPC分类号： H01L21/30608 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
摘要翻译：半导体器件包括半导体衬底上的栅极结构和半导体衬底中的凹陷区域。凹陷区域具有靠近半导体衬底的顶表面的最宽的侧向开口。最宽的侧向开口会削弱门结构。

3. 发明申请

US20090174005A1 SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION 有权
标题翻译：具有门禁下降区域的半导体器件
公开(公告)号：US20090174005A1
公开(公告)日：2009-07-09
申请号：US12408992
申请日：2009-03-23
申请人： Antonio Luis Pacheco Rotondaro , Trace Q. Hurd , Elisabeth Marley Koontz
发明人： Antonio Luis Pacheco Rotondaro , Trace Q. Hurd , Elisabeth Marley Koontz
IPC分类号： H01L27/092 , H01L29/06 , H01L21/4763
CPC分类号： H01L21/30608 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
摘要翻译：半导体器件包括半导体衬底上的栅极结构和半导体衬底中的凹陷区域。凹陷区域具有接近半导体衬底的顶表面的最宽的侧向开口。最宽的侧向开口会削弱门结构。

4. 发明授权

US07026232B1 Systems and methods for low leakage strained-channel transistor 有权
标题翻译：低泄漏应变通道晶体管的系统和方法
公开(公告)号：US07026232B1
公开(公告)日：2006-04-11
申请号：US11021020
申请日：2004-12-23
申请人： Elisabeth Marley Koontz , Antonio Luis Pacheco Rotondaro
发明人： Elisabeth Marley Koontz , Antonio Luis Pacheco Rotondaro
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/76 , H01L21/336
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/66636
摘要： The present invention facilitates semiconductor fabrication by providing methods of fabrication that mitigate leakage and apply strain to channel regions of transistor devices. A semiconductor device having gate structures, channel regions, and active regions is provided (102). Extension regions of a first type of conductivity are formed within the active regions (104). Recesses are then formed within a portion of the active regions (106). Second type recess structures are formed (108) within the recesses, wherein the second type recess structures have a second type of conductivity opposite the first type and are comprised of a strain inducing material. Then, first type recess structures are formed (110) within the recesses and on the second type recess structures, wherein the first type recess structures have the first type of conductivity and are comprised of a strain inducing material.
摘要翻译：本发明通过提供减少泄漏并施加应变到晶体管器件的沟道区的制造方法来促进半导体制造。提供具有栅极结构，沟道区和有源区的半导体器件（102）。在有源区（104）内形成第一类导电性的延伸区。然后在有源区域（106）的一部分内形成凹陷。在凹部内形成有第二类型的凹部结构（108），其中第二类型的凹部结构具有与第一类型相反的第二类型的导电性并且由应变诱导材料构成。然后，在凹部内和第二类型的凹部结构上形成第一类型的凹部结构（110），其中第一类型的凹部结构具有第一类型的导电性并且由应变诱导材料构成。

5. 发明授权

US07403719B2 Feedback control for free-space optical systems 有权
标题翻译：自由空间光学系统的反馈控制
公开(公告)号：US07403719B2
公开(公告)日：2008-07-22
申请号：US10610092
申请日：2003-06-30
申请人： Elisabeth Marley Koontz
发明人： Elisabeth Marley Koontz
IPC分类号： H04B10/04 , G02B26/00 , G02F1/00
CPC分类号： H04B10/1141
摘要： Disclosed is a system and method for aligning a free-space optical signal in an optical system having a light modulator having an array of pixels. In this system and method, certain pixels of the light modulator array are initially assigned for the modulation of the free-space optical signal. An alignment optical signal is generated and monitored, to determine whether the optical system components are properly aligned. The alignment optical signal is generated and propagated along a path that is substantially aligned with the path of the free-space optical signal. Detector elements are used to monitor the position (and shifts in the position) of the free-space optical signal. By reassigning the pixels of the array of the light modulator at the direction of a control system, it is possible for the light modulator to compensate for shifts in the alignment of the optical components within the system.
摘要翻译：公开了一种用于对准具有具有像素阵列的光调制器的光学系统中的自由空间光信号的系统和方法。在该系统和方法中，光调制器阵列的某些像素最初被分配用于自由空间光信号的调制。生成并监视对准光信号，以确定光学系统部件是否正确对准。对准光信号沿着与自由空间光信号的路径基本上对准的路径生成和传播。检测器元件用于监视自由空间光信号的位置（和位置偏移）。通过在控制系统的方向重新分配光调制器的阵列的像素，光调制器可以补偿系统内的光学部件对准的偏移。

6. 发明授权

US07203398B2 Compact DMD-based optical module 有权
标题翻译：紧凑的基于DMD的光模块
公开(公告)号：US07203398B2
公开(公告)日：2007-04-10
申请号：US10393420
申请日：2003-03-20
申请人： Elisabeth Marley Koontz , Donald A. Powell
发明人： Elisabeth Marley Koontz , Donald A. Powell
IPC分类号： G02B6/34 , G02B6/26 , G02B6/42
CPC分类号： G02B6/352 , G02B6/3552 , G02B6/356 , G02B6/3588 , G02B6/3594 , G02B6/4214
摘要： An optical module having an integral optical waveguide with waveguide ports at each end. The optical waveguide receives an input light beam through a first waveguide port. The input light beam passes through the waveguide and is emitted from the second waveguide port, where it is reflected by the reflective surface. After being reflected by the reflective surface, the input light beam can be directed onto the surface of a DMD array, where the input light beam can be selectively reflected in a particular direction. The reflective surface may also comprise a diffractive grating, thereby enabling wavelength selective switching. In addition, the reflective surface may comprise a generally concave surface that converts a diverging input light beam into a generally collimated light beam, thereby facilitating more accurate selection and switching by the DMD array.
摘要翻译：一种光学模块，其具有在每个端部具有波导端口的整体光波导。光波导通过第一波导端口接收输入光束。输入光束通过波导并从第二波导端口发射，在那里被反射表面反射。在被反射表面反射之后，输入光束可以被引导到DMD阵列的表面上，其中输入光束可以被选择性地沿特定方向反射。反射表面还可以包括衍射光栅，从而实现波长选择性切换。此外，反射表面可以包括将发散的输入光束转换成大致准直的光束的大致凹面，从而有助于DMD阵列的更精确的选择和切换。

7. 发明授权

US07279406B2 Tailoring channel strain profile by recessed material composition control 有权
标题翻译：通过凹陷材料成分控制调整通道应变曲线
公开(公告)号：US07279406B2
公开(公告)日：2007-10-09
申请号：US11021649
申请日：2004-12-22
申请人： Elisabeth Marley Koontz
发明人： Elisabeth Marley Koontz
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/823814 , H01L21/823807 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： The present invention facilitates semiconductor fabrication by providing methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is selected for the channel regions (104). Recessed regions are formed (106) in active regions of a semiconductor device after formation of gate structures according to the selected strain profile. A recess etch (106) is employed to remove a surface portion of the active regions thereby forming the recess regions. Subsequently, a composition controlled recess structure is formed (108) within the recessed regions according to the selected strain profile. The recess structure is comprised of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation (108) to tailor the applied vertical channel strain profile.
摘要翻译：本发明通过提供定制将应变分布应用于晶体管器件的沟道区域的制造方法来促进半导体制造。为通道区域（104）选择应变分布。根据所选择的应变分布，在形成栅极结构之后，在半导体器件的有源区中形成（106）凹陷区域。采用凹陷蚀刻（106）去除活性区域的表面部分，从而形成凹陷区域。随后，根据所选择的应变分布，在凹陷区域内形成组合物控制的凹陷结构（108）。凹陷结构由应变诱导材料组成，其中其一个或多个部件在形成期间被控制和/或调整（108）以调整施加的垂直通道应变分布。

8. 发明授权

US06958841B2 Generation of digital patterns for spatial light modulation 有权
标题翻译：生成用于空间光调制的数字图案
公开(公告)号：US06958841B2
公开(公告)日：2005-10-25
申请号：US10154257
申请日：2002-05-23
申请人： Paul L. Rancuret , Terry A. Barlett , Benjamin L. Lee , Elisabeth Marley Koontz
发明人： Paul L. Rancuret , Terry A. Barlett , Benjamin L. Lee , Elisabeth Marley Koontz
IPC分类号： H04N5/74 , G02B26/00 , G02F1/01
CPC分类号： H04N5/7458
摘要： Disclosed is a method for generating patterns to be used in a spatial light modulator having a plurality of pixels. The method includes generating an optical pattern to be placed upon the pixels of the spatial light modulator, applying the optical pattern to the pixels of the spatial light modulator, measuring the optical performance of the plurality of pixels having the optical pattern applied to it, comparing the measured optical performance to a target optical performance, and adjusting the optical pattern applied to the plurality of pixels to form another optical pattern that more closely achieves the target optical performance.
摘要翻译：公开了一种用于产生要在具有多个像素的空间光调制器中使用的图案的方法。该方法包括生成要放置在空间光调制器的像素上的光学图案，将光学图案应用于空间光调制器的像素，测量具有施加到其上的光学图案的多个像素的光学性能，比较测量到目标光学性能的光学性能，并且调整应用于多个像素的光学图案以形成更接近实现目标光学性能的另一种光学图案。

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