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    • 2. 发明授权
    • Ion implanter optimizer scan waveform retention and recovery
    • 离子注入机优化器扫描波形保留和恢复
    • US07547460B2
    • 2009-06-16
    • US09950939
    • 2001-09-12
    • Antonella CucchettiJoseph OlsonGregory GibilaroRosario Mollica
    • Antonella CucchettiJoseph OlsonGregory GibilaroRosario Mollica
    • C23C14/54C23C14/48
    • H01J37/3171H01J37/1474H01J2237/3045
    • Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.
    • 提供了用于控制离子注入系统中的剂量均匀性的方法和装置。 根据本发明的一个实施例,调整初始扫描波形以获得在第一注入过程中使用的所需均匀性,并且存储经调整的扫描波形。 存储的扫描波形在第二次注入过程中被调用并使用。 根据本发明的另一实施例,识别期望的波束参数,并且基于期望的波束参数,调用存储的扫描波形以用于均匀性调整处理,并且执行均匀性调整处理。 根据本发明的另一实施例,提供了一种装置,其包括用于测量扫描离子束的电流分布的光束轮廓仪。 该装置还包括数据采集和分析单元,用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形,以用于第一注入过程,存储经调整的扫描波形,调用所存储的扫描波形,并使用 在第二次植入过程中调用扫描波形。
    • 6. 发明申请
    • Methods and apparatus for ion beam angle measurement in two dimensions
    • 二维离子束角度测量的方法和装置
    • US20060219936A1
    • 2006-10-05
    • US11099119
    • 2005-04-05
    • Joseph OlsonEric HermansonRosario MollicaPaul Murphy
    • Joseph OlsonEric HermansonRosario MollicaPaul Murphy
    • G01K1/08H01J3/14
    • H01J37/244G01B15/00H01J2237/2446H01J2237/24507H01J2237/24528H01J2237/31701
    • An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.
    • 用于离子束的角度测量系统包括限定第一和第二特征的标志,其中第二特征具有与第一特征可变的间隔,沿着平移路径平移标记的机构,使得标记拦截至少一部分 离子束和感测装置,用于检测沿着平移路径的不同标志位置的离子束,并产生具有代表第一特征的第一信号分量和表示第二特征的第二信号分量的传感器信号。 标志的第一和第二信号分量和对应的位置代表垂直于平移路径的方向上离子束的角度。 感测装置可以是束电流传感器的二维阵列。 该系统可以提供水平和垂直波束角度的测量,同时仅在一个方向上翻译标志。
    • 7. 发明授权
    • Methods and systems for optimizing ion implantation uniformity control
    • 优化离子注入均匀性控制的方法和系统
    • US07189980B2
    • 2007-03-13
    • US10740654
    • 2003-12-18
    • Rosario Mollica
    • Rosario Mollica
    • H01J37/317H01J37/304
    • H01J37/3171H01J37/304H01J2237/24542
    • An apparatus and method are provided for optimizing ion implantation uniformity in a workpiece, such as a semiconductor wafer, which includes an ion beam generator for generating an ion beam, a beam scanning mechanism for diverging the ion beam and generating substantially parallel ion beam trajectories towards the workpiece, and an ion beam detector for measuring the ion beam current of the parallel ion beam trajectories as a function of the position of the ion beam detector. A uniformity controller filters the ion beam current measured by the ion beam detector to at least one predetermined resolution range and generates a uniformity signal to the beam scanning mechanism in response to the filtered ion beam current so that the workpiece is uniformly implanted. The uniformity controller determines a controllable frequency range for optimizing ion implantation uniformity control by making controllable frequencies observable and uncontrollable frequencies unobservable. As a result, the uniformity controller observes and controls spacially distributed components of the profiled beam current for optimizing the implantation of doses to the workpiece in a time and cost efficient manner.
    • 提供了一种用于优化工件(例如半导体晶片)中的离子注入均匀性的装置和方法,该半导体晶片包括用于产生离子束的离子束发生器,用于分离离子束并产生基本上平行的离子束轨迹的束扫描机构 工件以及离子束检测器,用于测量作为离子束检测器的位置的函数的平行离子束轨迹的离子束电流。 均匀性控制器将由离子束检测器测量的离子束电流过滤到至少一个预定的分辨率范围,并响应于滤波的离子束电流而向束扫描机构产生均匀信号,使得工件被均匀地注入。 均匀性控制器通过使可控频率可观察和不可控的频率不可观察来确定用于优化离子注入均匀性控制的可控频率范围。 因此,均匀性控制器观察并控制成型射束电流的空间分布组件,以便以时间和成本有效的方式优化对工件的剂量注入。
    • 8. 发明授权
    • Methods and apparatus for scanned beam uniformity adjustment in ion implanters
    • 离子注入机扫描光束均匀性调整的方法和装置
    • US06710359B2
    • 2004-03-23
    • US09815484
    • 2001-03-23
    • Joseph C. OlsonRosario Mollica
    • Joseph C. OlsonRosario Mollica
    • H01J3700
    • G21K1/08H01J37/304H01J2237/3045H01J2237/31701
    • Methods and apparatus are provided for adjusting the profile of a scanned ion beam. The spatial distribution of the unscanned ion beam is measured. The ion beam is scanned at an initial scan speed, and the beam profile of the scanned ion beam is measured. If the measured beam profile is not within specification, a scan speed correction that produces a desired profile correction is determined using a calculation which is based on the spatial distribution of the unscanned ion beam. The scan speed correction may be determined by convolving a candidate scan speed correction with the spatial distribution of the unscanned ion beam to produce a result and determining if the result is sufficiently close to the desired profile correction. A multi-dimensional search algorithm may be used to select the candidate scan speed correction. The ion beam is scanned at a corrected scan speed, which is based on the initial scan speed and the scan speed correction, to produce corrected beam profile.
    • 提供了用于调整扫描离子束的轮廓的方法和装置。 测量未扫描离子束的空间分布。 以初始扫描速度扫描离子束,并测量扫描离子束的光束分布。 如果测量的光束轮廓不在规定范围内,则使用基于未扫描的离子束的空间分布的计算来确定产生期望的轮廓校正的扫描速度校正。 可以通过将候选扫描速度校正与未扫描离子束的空间分布进行卷积以产生结果并确定结果是否足够接近所需轮廓校正来确定扫描速度校正。 可以使用多维搜索算法来选择候选扫描速度校正。 以基于初始扫描速度和扫描速度校正的校正扫描速度扫描离子束,以产生校正的波束分布。