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1. 发明申请

US20080185044A1 SYSTEM AND METHOD OF CHEMICAL DILUTION AND DISPENSE 审中-公开
标题翻译：化学沉淀和溶解的系统与方法
公开(公告)号：US20080185044A1
公开(公告)日：2008-08-07
申请号：US12024689
申请日：2008-02-01
申请人： Michael Clarke , Marc Laverdiere , Robert F. McLoughlin , J. Karl Niermeyer , Joseph E. Smith , Rosario Mollica
发明人： Michael Clarke , Marc Laverdiere , Robert F. McLoughlin , J. Karl Niermeyer , Joseph E. Smith , Rosario Mollica
IPC分类号： B67D5/56 , G05D11/13 , B01F15/04
CPC分类号： B01F5/0685 , B01F3/088 , G05D11/132 , Y10T137/0329
摘要： Embodiments disclosed herein provide a pump or a multiple-pump system that can mix chemicals without dilution tanks and can dispense the mixture of chemicals in a precise and highly controllable manner, particularly useful in semiconductor manufacturing processes. In some embodiments, one or more piston pumps of similar displacement are used to mix and dispense the chemical directly. A first valve is opened to a first chemical source. A piston is moved in a first direction to a selected position in a chamber to draw the first chemical into the chamber. The first valve is closed and a second valve is opened to a second chemical source. The piston is moved in the first direction to a second position in the chamber to draw in the second chemical and mix the chemicals. The second valve is closed and the piston is moved to dispense the fluids through a dispense port.
摘要翻译：本文公开的实施例提供了一种泵或多泵系统，其可以混合没有稀释罐的化学品，并且可以精确和高度可控的方式分配化学品的混合物，特别适用于半导体制造过程。在一些实施例中，使用类似位移的一个或多个活塞泵来直接混合和分配化学品。第一阀打开到第一化学源。活塞在第一方向上移动到室中的选定位置以将第一化学品吸入室中。第一阀关闭，第二阀打开到第二化学源。活塞沿第一方向移动到腔室中的第二位置以吸入第二化学品并混合化学品。关闭第二个阀门并移动活塞以通过分配口分配流体。

2. 发明申请

US20060076510A1 Ion beam implant current, spot width and position tuning 有权
标题翻译：离子束注入电流，光斑宽度和位置调整
公开(公告)号：US20060076510A1
公开(公告)日：2006-04-13
申请号：US10960904
申请日：2004-10-07
申请人： Shengwu Chang , Antonella Cucchetti , Joseph Dzengeleski , Gregory Gibilaro , Rosario Mollica , Gregg Norris , Joseph Olson , Marie Welsch
发明人： Shengwu Chang , Antonella Cucchetti , Joseph Dzengeleski , Gregory Gibilaro , Rosario Mollica , Gregg Norris , Joseph Olson , Marie Welsch
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24542 , H01J2237/30461 , H01J2237/31703
摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
摘要翻译：公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能横跨许多设置。

3. 发明授权

US07189980B2 Methods and systems for optimizing ion implantation uniformity control 有权
标题翻译：优化离子注入均匀性控制的方法和系统
公开(公告)号：US07189980B2
公开(公告)日：2007-03-13
申请号：US10740654
申请日：2003-12-18
申请人： Rosario Mollica
发明人： Rosario Mollica
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24542
摘要： An apparatus and method are provided for optimizing ion implantation uniformity in a workpiece, such as a semiconductor wafer, which includes an ion beam generator for generating an ion beam, a beam scanning mechanism for diverging the ion beam and generating substantially parallel ion beam trajectories towards the workpiece, and an ion beam detector for measuring the ion beam current of the parallel ion beam trajectories as a function of the position of the ion beam detector. A uniformity controller filters the ion beam current measured by the ion beam detector to at least one predetermined resolution range and generates a uniformity signal to the beam scanning mechanism in response to the filtered ion beam current so that the workpiece is uniformly implanted. The uniformity controller determines a controllable frequency range for optimizing ion implantation uniformity control by making controllable frequencies observable and uncontrollable frequencies unobservable. As a result, the uniformity controller observes and controls spacially distributed components of the profiled beam current for optimizing the implantation of doses to the workpiece in a time and cost efficient manner.
摘要翻译：提供了一种用于优化工件（例如半导体晶片）中的离子注入均匀性的装置和方法，该半导体晶片包括用于产生离子束的离子束发生器，用于分离离子束并产生基本上平行的离子束轨迹的束扫描机构工件以及离子束检测器，用于测量作为离子束检测器的位置的函数的平行离子束轨迹的离子束电流。均匀性控制器将由离子束检测器测量的离子束电流过滤到至少一个预定的分辨率范围，并响应于滤波的离子束电流而向束扫描机构产生均匀信号，使得工件被均匀地注入。均匀性控制器通过使可控频率可观察和不可控的频率不可观察来确定用于优化离子注入均匀性控制的可控频率范围。因此，均匀性控制器观察并控制成型射束电流的空间分布组件，以便以时间和成本有效的方式优化对工件的剂量注入。

4. 发明授权

US06710359B2 Methods and apparatus for scanned beam uniformity adjustment in ion implanters 有权
标题翻译：离子注入机扫描光束均匀性调整的方法和装置
公开(公告)号：US06710359B2
公开(公告)日：2004-03-23
申请号：US09815484
申请日：2001-03-23
申请人： Joseph C. Olson , Rosario Mollica
发明人： Joseph C. Olson , Rosario Mollica
IPC分类号： H01J3700
CPC分类号： G21K1/08 , H01J37/304 , H01J2237/3045 , H01J2237/31701
摘要： Methods and apparatus are provided for adjusting the profile of a scanned ion beam. The spatial distribution of the unscanned ion beam is measured. The ion beam is scanned at an initial scan speed, and the beam profile of the scanned ion beam is measured. If the measured beam profile is not within specification, a scan speed correction that produces a desired profile correction is determined using a calculation which is based on the spatial distribution of the unscanned ion beam. The scan speed correction may be determined by convolving a candidate scan speed correction with the spatial distribution of the unscanned ion beam to produce a result and determining if the result is sufficiently close to the desired profile correction. A multi-dimensional search algorithm may be used to select the candidate scan speed correction. The ion beam is scanned at a corrected scan speed, which is based on the initial scan speed and the scan speed correction, to produce corrected beam profile.
摘要翻译：提供了用于调整扫描离子束的轮廓的方法和装置。测量未扫描离子束的空间分布。以初始扫描速度扫描离子束，并测量扫描离子束的光束分布。如果测量的光束轮廓不在规定范围内，则使用基于未扫描的离子束的空间分布的计算来确定产生期望的轮廓校正的扫描速度校正。可以通过将候选扫描速度校正与未扫描离子束的空间分布进行卷积以产生结果并确定结果是否足够接近所需轮廓校正来确定扫描速度校正。可以使用多维搜索算法来选择候选扫描速度校正。以基于初始扫描速度和扫描速度校正的校正扫描速度扫描离子束，以产生校正的波束分布。

5. 发明授权

US07547460B2 Ion implanter optimizer scan waveform retention and recovery 有权
标题翻译：离子注入机优化器扫描波形保留和恢复
公开(公告)号：US07547460B2
公开(公告)日：2009-06-16
申请号：US09950939
申请日：2001-09-12
申请人： Antonella Cucchetti , Joseph Olson , Gregory Gibilaro , Rosario Mollica
发明人： Antonella Cucchetti , Joseph Olson , Gregory Gibilaro , Rosario Mollica
IPC分类号： C23C14/54 , C23C14/48
CPC分类号： H01J37/3171 , H01J37/1474 , H01J2237/3045
摘要： Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.
摘要翻译：提供了用于控制离子注入系统中的剂量均匀性的方法和装置。根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。存储的扫描波形在第二次注入过程中被调用并使用。根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用在第二次植入过程中调用扫描波形。

6. 发明申请

US20060289798A1 Methods & apparatus for ion beam angle measurement in two dimensions 有权
标题翻译：二维离子束角度测量方法与装置
公开(公告)号：US20060289798A1
公开(公告)日：2006-12-28
申请号：US11336466
申请日：2006-01-20
申请人： James Cummings , Joseph Olson , Arthur Clough , Eric Hermanson , Rosario Mollica , Paul Murphy , Mark Donahue
发明人： James Cummings , Joseph Olson , Arthur Clough , Eric Hermanson , Rosario Mollica , Paul Murphy , Mark Donahue
IPC分类号： H01J37/08
CPC分类号： H01J37/244 , G01B15/00 , H01J37/304 , H01J37/3171 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31701 , H01J2237/31703
摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.
摘要翻译：用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

7. 发明授权

US08844909B2 Gasification systems and methods for making bubble free solutions of gas in liquid 有权
标题翻译：气化系统和方法，用于制造气体在液体中的无泡沫溶液
公开(公告)号：US08844909B2
公开(公告)日：2014-09-30
申请号：US12993791
申请日：2009-05-18
申请人： Yanan Annie Xia , J. Karl Niermeyer , Rosario Mollica , Gregg T. Conner
发明人： Yanan Annie Xia , J. Karl Niermeyer , Rosario Mollica , Gregg T. Conner
IPC分类号： B01F3/04 , B01F15/00
CPC分类号： B01F3/04439 , B01F3/04106 , B01F3/04985 , B01F15/00207 , B01F2003/04404 , Y10T137/0318
摘要： Embodiments disclosed herein can introduce low amounts of gas in a liquid with fast response time and low variation in concentration. In one embodiment, a gas is directed into an inlet on a gas contacting side of a porous element of a contactor and a liquid is directed into an inlet on a liquid contacting side of the porous element of the contactor. The liquid contacting side and the gas contacting side are separated by the porous element and a housing. The gas is removed from an outlet on the gas contacting side of the porous element at a reduced pressure compared to the pressure of the gas flowing into the inlet of the contactor. A liquid containing a portion of the gas transferred into the liquid is removed from an outlet on the liquid contacting side of the porous element, producing a dilute bubble free solution.
摘要翻译：本文公开的实施例可以在液体中引入少量气体，其响应时间快，浓度变化小。在一个实施例中，气体被引导到接触器的多孔元件的气体接触侧的入口中，并且液体被引导到接触器的多孔元件的液体接触侧上的入口中。液体接触侧和气体接触侧被多孔元件和壳体分离。与流入接触器的入口的气体的压力相比，气体在减压下从多孔元件的气体接触侧的出口排出。从多孔元件的液体接触侧的出口排出含有一部分转移到液体中的气体的液体，产生无气泡的溶液。

8. 发明申请

US20110180148A1 GASIFICATION SYSTEMS AND METHODS FOR MAKING BUBBLE FREE SOLUTIONS OF GAS IN LIQUID 有权
标题翻译：用于制造气体中无气泡溶液的气化系统和方法
公开(公告)号：US20110180148A1
公开(公告)日：2011-07-28
申请号：US12993791
申请日：2009-05-18
申请人： Yanan Annie Xia , J. Karl Niermeyer , Rosario Mollica , Gregg T. Conner
发明人： Yanan Annie Xia , J. Karl Niermeyer , Rosario Mollica , Gregg T. Conner
IPC分类号： F15D1/00 , B01F3/04
CPC分类号： B01F3/04439 , B01F3/04106 , B01F3/04985 , B01F15/00207 , B01F2003/04404 , Y10T137/0318
摘要： Embodiments disclosed herein can introduce low amounts of gas in a liquid with fast response time and low variation in concentration. In one embodiment, a gas is directed into an inlet on a gas contacting side of a porous element of a contactor and a liquid is directed into an inlet on a liquid contacting side of the porous element of the contactor. The liquid contacting side and the gas contacting side are separated by the porous element and a housing. The gas is removed from an outlet on the gas contacting side of the porous element at a reduced pressure compared to the pressure of the gas flowing into the inlet of the contactor. A liquid containing a portion of the gas transferred into the liquid is removed from an outlet on the liquid contacting side of the porous element, producing a dilute bubble free solution.
摘要翻译：本文公开的实施例可以在液体中引入少量气体，其响应时间快，浓度变化小。在一个实施例中，气体被引导到接触器的多孔元件的气体接触侧的入口中，并且液体被引导到接触器的多孔元件的液体接触侧上的入口中。液体接触侧和气体接触侧被多孔元件和壳体分离。与流入接触器的入口的气体的压力相比，气体在减压下从多孔元件的气体接触侧的出口排出。从多孔元件的液体接触侧的出口排出含有一部分转移到液体中的气体的液体，产生无气泡的溶液。

9. 发明授权

US07442944B2 Ion beam implant current, spot width and position tuning 有权
标题翻译：离子束注入电流，光斑宽度和位置调整
公开(公告)号：US07442944B2
公开(公告)日：2008-10-28
申请号：US10960904
申请日：2004-10-07
申请人： Shengwu Chang , Antonella Cucchetti , Joseph P. Dzengeleski , Gregory R. Gibilaro , Rosario Mollica , Gregg A. Norris , Joseph C. Olson , Marie J. Welsch
发明人： Shengwu Chang , Antonella Cucchetti , Joseph P. Dzengeleski , Gregory R. Gibilaro , Rosario Mollica , Gregg A. Norris , Joseph C. Olson , Marie J. Welsch
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24542 , H01J2237/30461 , H01J2237/31703
摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
摘要翻译：公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能横跨许多设置。

10. 发明授权

US07394073B2 Methods and apparatus for ion beam angle measurement in two dimensions 有权
标题翻译：二维离子束角度测量的方法和装置
公开(公告)号：US07394073B2
公开(公告)日：2008-07-01
申请号：US11336466
申请日：2006-01-20
申请人： James J. Cummings , Joseph Olson , Arthur H. Clough , Eric Hermanson , Rosario Mollica , Paul J. Murphy , Mark Donahue
发明人： James J. Cummings , Joseph Olson , Arthur H. Clough , Eric Hermanson , Rosario Mollica , Paul J. Murphy , Mark Donahue
IPC分类号： G01K1/08
CPC分类号： H01J37/244 , G01B15/00 , H01J37/304 , H01J37/3171 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31701 , H01J2237/31703
摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.
摘要翻译：用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

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