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    • 1. 发明授权
    • Dendritic interconnection system
    • 树枝状互连系统
    • US5759046A
    • 1998-06-02
    • US773922
    • 1996-12-30
    • Anthony Paul IngrahamJaynal Abedin MollaDavid Brian Stone
    • Anthony Paul IngrahamJaynal Abedin MollaDavid Brian Stone
    • H01R4/26H01R43/02H05K3/32H01R13/60
    • H01R4/26H01R12/52H05K3/325H01R43/02
    • A technique of connecting a first member having a first face to a second member having a second face utilizing dendrites is provided. Dendrites are formed on one face of the first member in a given configuration. Dendrite receiving and securing material, preferably solder, is formed on a face of the second member in a configuration confirming substantially to the given configuration of the dendrites on the one face. The first and second members are then placed in a position relative to each other with the dendrites on the one face of the first member in contact with the dendrite receiving and engaging material on the face of the second member. An airtight seal is then provided between the first and second faces surrounding the dendrites and dendrite receiving and engaging material, which forms a sealed chamber between the first and second members. Thereafter, a vacuum is pulled within the sealed chamber, thereby causing the ambient air pressure on the two members to urge the two members toward each other which will embed the dendrites in the dendrite receiving and engaging material to form interconnection therebetween. In order to enhance or improve the bond between the dendrites and the dendrite receiving and securing material, the dendrites and dendrite receiving and securing material each contain a component which can form an intermetallic compound therebetween.
    • 提供了一种将具有第一面的第一构件与具有第二面的第二构件连接起来利用枝晶的技术。 在给定的构造中,树枝状体形成在第一构件的一个面上。 树枝状接收和固定材料(优选焊料)形成在第二构件的表面上,其构造基本上确认了在一个面上的树突的给定构型。 然后将第一和第二构件相对于彼此放置在第一构件的一个面上的树突与第二构件的表面上的枝晶接收和接合材料接触的位置。 然后在围绕树突和树枝状晶体接收和接合材料的第一和第二表面之间提供气密密封,其在第一和第二构件之间形成密封室。 此后,在密封室内拉动真空,从而使两个构件上的环境空气压力相互推动两个构件,这两个构件将将树枝状物嵌入枝晶接收和接合材料中以在其间形成互连。 为了增强或改善枝晶与树枝状晶体接收和固定材料之间的结合,枝晶和枝晶接收和固定材料各自含有可在其间形成金属间化合物的组分。
    • 3. 发明授权
    • Apparatus, and corresponding method, for stress testing wire bond-type
semi-conductor chips
    • 装置及相应的方法,用于应力测试导线接合型半导体芯片
    • US5994910A
    • 1999-11-30
    • US160057
    • 1998-09-24
    • Francis Joseph Downes, Jr.Anthony Paul IngrahamJaynal Abedin Molla
    • Francis Joseph Downes, Jr.Anthony Paul IngrahamJaynal Abedin Molla
    • G01R31/28G01R1/073G01R31/02
    • G01R31/2862
    • An apparatus, and a corresponding method, for stress-testing wire bond-type semiconductor chips is disclosed. The apparatus includes a clamp housing, with a spring-loaded screw extending through the top end of the housing. Contained within the clamp housing is a substantially rigid, electrically insulating base plate positioned at a lower end of the clamp housing. The upper surface of the base plate includes a depression which contains an insert fabricated either from an elastomeric material or a semiconductor material, such as silicon. A flexible, electrically insulating layer made from, for example, polyimide, overlies the base plate and insert. Significantly, the upper surface of the flexible, electrically insulating layer includes a plurality of dendritic contacts. It is through these dendritic contacts that electrical contact is made to the contact pads of a wire bond-type semiconductor chip.
    • 公开了一种用于应力测试引线接合型半导体芯片的装置和相应的方法。 该装置包括夹紧壳体,其中弹簧加载的螺钉延伸穿过壳体的顶端。 包含在夹具壳体内的是位于夹具壳体的下端的基本上刚性的电绝缘基板。 基板的上表面包括凹陷,其包含由弹性体材料或诸如硅的半导体材料制成的插入件。 由例如聚酰亚胺制成的柔性电绝缘层覆盖在基板和插入件上。 重要的是,柔性电绝缘层的上表面包括多个树枝状接触。 通过这些树突状触点,对引线接合型半导体芯片的接触焊盘进行电接触。
    • 8. 发明授权
    • Uniform plating of dendrites
    • 树突的均匀电镀
    • US5939786A
    • 1999-08-17
    • US748462
    • 1996-11-08
    • Francis Joseph Downes, Jr.Raymond Thomas GalascoJaynal Abedin Molla
    • Francis Joseph Downes, Jr.Raymond Thomas GalascoJaynal Abedin Molla
    • H01L21/48H01L23/498H05K3/40H01L23/48
    • H01L23/49811H01L21/4853H05K3/4007H01L2924/0002H05K2201/09481H05K2203/0307H05K2203/0723Y10T29/49126Y10T29/49155
    • The present invention provides uniform dendrites, on circuit features instead of large, elongated dendrites along the edges of the circuit features. The dendrites are formed by a method comprising the following steps: providing a substrate having circuitry disposed thereon; applying a photoresist to the substrate at a thickness which is preferably about the height of the intended dendrite height; imaging the photoresist to expose all or a portion of the top surface of the circuitry; forming the dendrites; and removing the photoresist. The photoresist which is employed to control the dendrite height is applied so that the photoresist either: abuts the edge of the circuitry leaving the top surface of the circuitry exposed; or abuts the edge of the circuitry and extend over the top edge of the circuitry so that a portion of the top surface of the circuitry is exposed; or does not touch the circuitry nor an area surrounding the base of the circuitry. The method of the present invention provides uniform dendrites, that is, the dendrites along the edge of the circuitry are within about 50%, preferably about 40%, more preferably within about 25% of the average dendrite height; preferably the dendrites along the edge of the circuitry are within 10% of the highest non-edge dendrite. The invention also relates to electronic structures having uniform dendrites disposed thereon.
    • 本发明提供了均匀的枝晶,电路特征,而不是沿着电路特征边缘的大的细长的枝晶。 树突通过包括以下步骤的方法形成:提供其上设置有电路的基板; 将光致抗蚀剂以优选约为预期枝晶高度的高度的厚度施加到基底上; 成像光致抗蚀剂以暴露电路的顶表面的全部或一部分; 形成枝晶; 并去除光致抗蚀剂。 应用用于控制枝晶高度的光致抗蚀剂,使得光致抗蚀剂可以:离开电路的边缘,暴露电路的顶表面; 或邻接电路的边缘并且在电路的顶部边缘上延伸,使得电路的顶部表面的一部分被暴露; 或者不接触电路,也不接触电路底部周围的区域。 本发明的方法提供均匀的枝晶,即沿着电路边缘的枝晶在平均枝晶高度的约50%,优选约40%,更优选约25%的范围内; 优选沿着电路边缘的枝晶在最高非边缘枝晶的10%以内。 本发明还涉及其上布置有均匀树突的电子结构。
    • 10. 发明授权
    • Method for uniform plating of dendrites
    • 枝晶均匀电镀方法
    • US6043150A
    • 2000-03-28
    • US304920
    • 1999-05-04
    • Francis Joseph Downes, Jr.Raymond Thomas GalascoJaynal Abedin Molla
    • Francis Joseph Downes, Jr.Raymond Thomas GalascoJaynal Abedin Molla
    • H01L21/48H01L23/498H05K3/40H05K3/36
    • H01L23/49811H01L21/4853H05K3/4007H01L2924/0002H05K2201/09481H05K2203/0307H05K2203/0723Y10T29/49126Y10T29/49155
    • The present invention provides a novel method for forming uniform dendrites, on circuit features that does not result in large, elongated dendrites along the edges of the circuit features. The method comprises the following steps: providing a substrate having circuitry disposed thereon; applying a photoresist to the substrate at a thickness which is preferably about the height of the intended dendrite height; imaging the photoresist to expose all or a portion of the top surface of the circuitry; forming the dendrites; and removing the photoresist. The photoresist which is employed to control the dendrite height is applied so that the photoresist either: abuts the edge of the circuitry leaving the top surface of the circuitry exposed; or abuts the edge of the circuitry and extend over the top edge of the circuitry so that a portion of the top surface of the circuitry is exposed; or does not touch the circuitry nor an area surrounding the base of the circuitry. The method of the present invention provides uniform dendrites, that is, the dendrites along the edge of the circuitry are within about 50%, preferably about 40%, more preferably within about 25% of the average dendrite height; preferably the dendrites along the edge of the circuitry are within 10% of the highest non-edge dendrite. The invention also relates to electronic structures having uniform dendrites disposed thereon.
    • 本发明提供了一种用于形成均匀枝晶的新方法,其电路特征不会导致沿着电路特征边缘的大的细长树突。 该方法包括以下步骤:提供其上设置有电路的基板; 将光致抗蚀剂以优选约为预期枝晶高度的高度的厚度施加到基底上; 成像光致抗蚀剂以暴露电路的顶表面的全部或一部分; 形成枝晶; 并去除光致抗蚀剂。 应用用于控制枝晶高度的光致抗蚀剂,使得光致抗蚀剂可以:离开电路的边缘,暴露电路的顶表面; 或邻接电路的边缘并且在电路的顶部边缘上延伸,使得电路的顶部表面的一部分被暴露; 或者不接触电路,也不接触电路底部周围的区域。 本发明的方法提供均匀的枝晶,即沿着电路边缘的枝晶在平均枝晶高度的约50%,优选约40%,更优选约25%的范围内; 优选沿着电路边缘的枝晶在最高非边缘枝晶的10%以内。 本发明还涉及其上布置有均匀树突的电子结构。