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1. 发明申请

US20120139001A1 Method For Producing An Organic Optoelectronic Component And Organic Optoelectronic Component 审中-公开
标题翻译：生产有机光电子元件和有机光电元件的方法
公开(公告)号：US20120139001A1
公开(公告)日：2012-06-07
申请号：US13141081
申请日：2009-12-10
申请人： Angela Eberhardt , Tilman Schlenker , Marc Philippens , Ulrike Beer , Joachim Wirth-Schoen , Florian Peskoller , Ewald Poesl
发明人： Angela Eberhardt , Tilman Schlenker , Marc Philippens , Ulrike Beer , Joachim Wirth-Schoen , Florian Peskoller , Ewald Poesl
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： C03C27/06 , H01L51/5246 , H01L51/5256 , H01L51/5259
摘要： Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (1) having an active region (12) and a first connection region (11) surrounding said active region (12), wherein an organic, functional layer sequence (3) is formed in said active region (12), B) providing a second substrate (2) having a cover region (22) and a second connection region (21) surrounding said cover region (22), C) applying a first connection layer (4) made from a first glass solder material directly to said second substrate (2) in said second connection region (21), D) vitrifying (91) said first glass solder material of said first connection layer (4), E) applying a second connection layer (5) to said vitrified first connection layer (4) or to said first connection region (11) of said first substrate (1) and F) connecting said first substrate (1) to said second substrate (2) such that said second connection layer (5) connects said first connection region (11) to said first connection layer (4). The invention furthermore relates to an organic optoelectronic component.
摘要翻译：制备有机光电子部件包括以下步骤：A）提供具有有源区（12）的第一衬底（1）和围绕所述有源区（12）的第一连接区（11），其中有机功能层序列（3）形成在所述有源区（12）中，B）提供具有覆盖区域（22）和围绕所述覆盖区域（22）的第二连接区域（21）的第二基板（2），C）在所述第二连接区域（21）中由第一玻璃焊料直接与所述第二基板（2）制成的连接层（4），D）玻璃化所述第一连接层（4）的所述第一玻璃焊料材料，E 将第二连接层（5）施加到所述玻璃化的第一连接层（4）或所述第一基板（1）的所述第一连接区域（11）上，以及F）将所述第一基板（1）连接到所述第二基板），使得所述第二连接层（5）将所述第一连接区域（11）到所述第一连接层（4）。本发明还涉及有机光电子部件。

2. 发明申请

US20130056725A1 Radiation-Emitting Component with a Semiconductor Chip and a Conversion Element and Method for the Production Thereof 有权
标题翻译：具有半导体芯片和转换元件的辐射发射元件及其制造方法
公开(公告)号：US20130056725A1
公开(公告)日：2013-03-07
申请号：US13580858
申请日：2011-02-25
申请人： Angela Eberhardt , Joachim Wirth-Schoen , Ewald Poesl
发明人： Angela Eberhardt , Joachim Wirth-Schoen , Ewald Poesl
IPC分类号： H01L33/26 , H01L33/50
CPC分类号： H01L33/50 , H01L33/501 , H01L33/502 , H01L33/507 , H01L33/508 , H01L33/56 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.
摘要翻译：辐射发射部件包括半导体芯片和转换元件。半导体芯片包括适于产生电磁辐射的有源层和辐射出射面。转换元件包括基质材料和发光材料。转换元件布置在半导体芯片的辐射出射面的下游。基质材料包含至少40wt。氧化碲，不含三氧化二硼和/或氧化锗。进一步说明了一种用于制造这种辐射发射部件的方法。

3. 发明授权

US08890140B2 Radiation-emitting component with a semiconductor chip and a conversion element and method for the production thereof 有权
标题翻译：具有半导体芯片的辐射发射部件和转换元件及其制造方法
公开(公告)号：US08890140B2
公开(公告)日：2014-11-18
申请号：US13580858
申请日：2011-02-25
申请人： Angela Eberhardt , Joachim Wirth-Schoen , Ewald Poesl
发明人： Angela Eberhardt , Joachim Wirth-Schoen , Ewald Poesl
IPC分类号： H01L29/10 , H01L33/50 , H01L33/56
CPC分类号： H01L33/50 , H01L33/501 , H01L33/502 , H01L33/507 , H01L33/508 , H01L33/56 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and/or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.
摘要翻译：辐射发射部件包括半导体芯片和转换元件。半导体芯片包括适于产生电磁辐射的有源层和辐射出射面。转换元件包括基质材料和发光材料。转换元件布置在半导体芯片的辐射出射面的下游。基质材料包含至少40wt。氧化碲，不含三氧化二硼和/或氧化锗。进一步说明了一种用于制造这种辐射发射部件的方法。

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