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1. 发明授权

US06665201B1 Direct connect solid-state storage device 有权
标题翻译：直接连接固态存储设备
公开(公告)号：US06665201B1
公开(公告)日：2003-12-16
申请号：US10202051
申请日：2002-07-24
申请人： Andrew M. Spencer , Thomas C. Anthony , Colin A. Stobbs , Sarah M. Brandenberger , Steven C. Johnson
发明人： Andrew M. Spencer , Thomas C. Anthony , Colin A. Stobbs , Sarah M. Brandenberger , Steven C. Johnson
IPC分类号： G11C1908
CPC分类号： G11C11/005 , G06Q50/22
摘要： The present disclosure relates to a solid-state storage device. In one arrangement, the storage device comprises a memory device comprising one of an atomic resolution storage (ARS) device and a magnetic random access memory (MRAM) device, a controller, and an integral connector that is used to directly connect the storage device to another device.
摘要翻译：本公开涉及一种固态存储装置。在一种布置中，存储装置包括存储装置，其包括原子分辨率存储（ARS）装置和磁性随机存取存储器（MRAM）装置，控制器和用于将存储装置直接连接到另一个设备。

2. 发明授权

US06765819B1 Magnetic memory device having improved switching characteristics 有权
标题翻译：具有改进的开关特性的磁存储器件
公开(公告)号：US06765819B1
公开(公告)日：2004-07-20
申请号：US10205531
申请日：2002-07-25
申请人： Manoj Bhattacharyya , Thomas C. Anthony , Frederick A. Perner , Steven C. Johnson
发明人： Manoj Bhattacharyya , Thomas C. Anthony , Frederick A. Perner , Steven C. Johnson
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.
摘要翻译：公开了磁存储器件。在一个实施例中，该装置包括具有沿着第一方向对准的容易轴的存储单元，所述存储单元被配置为当仅沿着第一方向接收磁场时最容易从一个逻辑状态切换到另一逻辑状态;以及与所述存储单元相关联的磁偏置元件，所述磁偏置元件具有沿着不同于所述第一方向的第二方向排列的磁取向。

3. 发明申请

US20130287443A1 PRINTER CHARGING BLADES AND PRINTERS 有权
标题翻译：打印机充电刀片和打印机
公开(公告)号：US20130287443A1
公开(公告)日：2013-10-31
申请号：US13459509
申请日：2012-04-30
申请人： Quang P. Lam , Michael H. Lee , Omer Gila , Thomas C. Anthony , Seongsik Chang , Paul F. Matheson
发明人： Quang P. Lam , Michael H. Lee , Omer Gila , Thomas C. Anthony , Seongsik Chang , Paul F. Matheson
IPC分类号： G03G15/02
CPC分类号： G03G15/0233
摘要： Printer charging blades and printers are disclosed. An example charging blade for a printer includes an insulating layer to contact a photo imaging surface at an angle to apply pressure to the photo imaging surface, the pressure to control an amount of material present on the photo imaging surface, and a conductive layer attached to a side of the insulating layer, the conductive layer to be charged and to apply a first charge to the photo imaging surface.
摘要翻译：公开了打印机充电刀片和打印机。用于打印机的示例性充电刮刀包括以一定角度接触光成像表面的绝缘层，以向光学成像表面施加压力，控制存在于光成像表面上的材料的量的压力，以及附着到绝缘层的一侧，要被充电的导电层并且向光致成像表面施加第一电荷。

4. 发明授权

US06961263B2 Memory device with a thermally assisted write 有权
标题翻译：具有热辅助写入的存储器件
公开(公告)号：US06961263B2
公开(公告)日：2005-11-01
申请号：US10657519
申请日：2003-09-08
申请人： Kenneth K. Smith , Thomas C. Anthony , Lung T. Tran
发明人： Kenneth K. Smith , Thomas C. Anthony , Lung T. Tran
IPC分类号： G11C11/15 , G11C11/14 , G11C5/06
CPC分类号： G11C11/15 , G11C11/1675
摘要： A memory device includes an array of magnetic storage cells. Each magnetic storage cell in the array includes a set of conductors used to write data to a storage cell and a second set of conductors used to heat the magnetic storage cell and read data from the magnetic storage cell. The magnetic storage cells can be used in electronic systems such as a computer system or consumer electronic system.
摘要翻译：存储器件包括磁存储单元阵列。阵列中的每个磁存储单元包括用于向存储单元写入数据的一组导体和用于加热磁存储单元并从磁存储单元读取数据的第二组导体。磁存储单元可用于诸如计算机系统或消费电子系统的电子系统中。

5. 发明授权

US06947313B2 Method and apparatus of coupling conductors in magnetic memory 失效
标题翻译：在磁存储器中耦合导体的方法和装置
公开(公告)号：US06947313B2
公开(公告)日：2005-09-20
申请号：US10649076
申请日：2003-08-27
申请人： Frederick A. Perner , Kenneth K. Smith , Thomas C. Anthony
发明人： Frederick A. Perner , Kenneth K. Smith , Thomas C. Anthony
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.
摘要翻译：在磁存储器中耦合导体的方法和装置。在一些实施例中，存储元件包括：第一磁存储元件，磁耦合到第一磁存储元件的第一组导体，第二磁存储元件，与第二磁存储器元件磁耦合的第二组导体，第二磁存储元件基本上垂直于第一磁存储元件，并且第一和第二组导体具有至少一个共同的导体。

6. 发明授权

US06865107B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US06865107B2
公开(公告)日：2005-03-08
申请号：US10601895
申请日：2003-06-23
申请人： Thomas C. Anthony , Frederick A. Perner , Manoj K. Bhattacharyya
发明人： Thomas C. Anthony , Frederick A. Perner , Manoj K. Bhattacharyya
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/15
摘要： A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
摘要翻译：描述了具有多个位单元的磁存储器阵列。每个位单元包括至少一个具有相应去磁场的具有自由磁极的磁性层。磁通量吸收层设置在多个位单元中的至少两个位单元之间。

7. 发明授权

US06794695B2 Magneto resistive storage device having a magnetic field sink layer 有权
标题翻译：具有磁场吸收层的磁阻存储装置
公开(公告)号：US06794695B2
公开(公告)日：2004-09-21
申请号：US10135241
申请日：2002-04-29
申请人： Manish Sharma , Thomas C. Anthony , Manoj Bhattacharyya
发明人： Manish Sharma , Thomas C. Anthony , Manoj Bhattacharyya
IPC分类号： H01L2976
CPC分类号： G11C11/16 , G11C11/161
摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
摘要翻译：公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。

8. 发明授权

US06580144B2 One time programmable fuse/anti-fuse combination based memory cell 失效
标题翻译：一次可编程保险丝/反熔丝组合的存储单元
公开(公告)号：US06580144B2
公开(公告)日：2003-06-17
申请号：US09964768
申请日：2001-09-28
申请人： Thomas C. Anthony
发明人： Thomas C. Anthony
IPC分类号： H01L2900
CPC分类号： H01L27/101 , G11C17/16 , H01L23/5252 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A one-time programmable memory cell includes a fuse and an anti-fuse in series. The memory cell has two states, an initial state and a written (programmed) state. In the initial state, a resistance of the cell is finite, typically dominated by the relatively high resistance of the anti-fuse. In the written state, the resistance is infinite because the breakdown of the fuse resulting in an open circuit. The cell may be programmed by applying a critical voltage across the cell generating a critical current to cause the fuse to become open. When critical voltage is applied, this generally causes the anti-fuse to break down, which in turn causes a pulse of high current to be applied to the fuse. The states are detected by applying a read voltage across the memory cell. If the memory has not been programmed, then a measurable amount flows. Otherwise, no current flows.
摘要翻译：一次性可编程存储单元包括一个保险丝和一个串联的反熔丝。存储单元具有两个状态，初始状态和写入（编程）状态。在初始状态下，电池的电阻是有限的，通常由抗熔丝的较高电阻来支配。在写入状态下，电阻是无限大的，因为熔断器导致开路。可以通过在电池周围施加临界电压来生成电池来编程，以产生临界电流以使熔丝变得开放。当施加临界电压时，这通常导致反熔丝断裂，这又导致将高电流脉冲施加到保险丝。通过在存储器单元上施加读取电压来检测状态。如果存储器尚未编程，则可测量的数量流过。否则，没有电流流动。

9. 发明授权

US06577529B1 Multi-bit magnetic memory device 有权
标题翻译：多位磁记忆体装置
公开(公告)号：US06577529B1
公开(公告)日：2003-06-10
申请号：US10235011
申请日：2002-09-03
申请人： Manish Sharma , Thomas C. Anthony , Lung T. Tran
发明人： Manish Sharma , Thomas C. Anthony , Lung T. Tran
IPC分类号： G11C1100
CPC分类号： G11C11/15 , G11C11/5607 , G11C2213/71
摘要： A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.
摘要翻译：存储单元包括用铁磁材料包覆的导体; 在包层导体的相对侧上的第一和第二间隔层; 第一间隔层上的第一数据层; 以及第二间隔层上的第二数据层。

10. 发明授权

US5930087A Robust recording head for near-contact operation 失效
标题翻译：坚固的记录头，用于近距离操作
公开(公告)号：US5930087A
公开(公告)日：1999-07-27
申请号：US974420
申请日：1997-11-20
申请人： James A. Brug , Manoj K. Bhattacharyya , Lung T. Tran , Thomas C. Anthony
发明人： James A. Brug , Manoj K. Bhattacharyya , Lung T. Tran , Thomas C. Anthony
IPC分类号： G11B5/11 , G11B5/33 , G11B5/39 , G11B5/40 , G11B19/04 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/33 , G11B5/332 , G11B5/3903 , G11B5/3909 , G11B5/3919 , G11B5/40 , H01F10/3268 , G11B19/04 , G11B5/11 , G11B5/3912 , G11B5/3967
摘要： A robust recording head with a spin tunneling sensing element separated from an interface between the recording head and a recording media so as not to be affected by collisions and other ill effects at the interface between the recording head and the recording media. The spin tunneling sensing element includes a pair of magnetic elements wherein one of the magnetic elements functions as a flux guide that conducts magnetic flux emanating from the recording media away from the interface to an active area of the spin tunneling sensing element.
摘要翻译：一种坚固的记录头，其具有与记录头和记录介质之间的接口分开的自旋隧道感测元件，以便不受记录头和记录介质之间的界面处的碰撞和其它不良影响的影响。自旋隧道感测元件包括一对磁性元件，其中一个磁性元件用作将从记录介质发出的磁通远离界面移动到自旋隧道感应元件的有效区域的磁通引导件。

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