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1. 发明授权

US06865107B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US06865107B2
公开(公告)日：2005-03-08
申请号：US10601895
申请日：2003-06-23
申请人： Thomas C. Anthony , Frederick A. Perner , Manoj K. Bhattacharyya
发明人： Thomas C. Anthony , Frederick A. Perner , Manoj K. Bhattacharyya
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/15
摘要： A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
摘要翻译：描述了具有多个位单元的磁存储器阵列。每个位单元包括至少一个具有相应去磁场的具有自由磁极的磁性层。磁通量吸收层设置在多个位单元中的至少两个位单元之间。

2. 发明授权

US07079438B2 Controlled temperature, thermal-assisted magnetic memory device 有权
标题翻译：受控温度，热辅助磁存储器件
公开(公告)号：US07079438B2
公开(公告)日：2006-07-18
申请号：US10779909
申请日：2004-02-17
申请人： Frederick A. Perner , Manoj K. Bhattacharyya
发明人： Frederick A. Perner , Manoj K. Bhattacharyya
IPC分类号： G11C7/04
CPC分类号： G11C11/15 , G11C11/1675
摘要： This invention provides a controlled temperature, thermal-assisted magnetic memory device. In a particular embodiment, there is an array of SVM cells, each characterized by an alterable orientation of magnetization and including a material wherein the coercivity is decreased upon an increase in temperature. In addition, at least one reference SVM (RSVM) cell substantially similar to and in close proximity to the SVM cells of the array is provided. A provided feedback control temperature controller receives a feedback voltage from the reference SVM cell, corresponding to temperature, and adjusts power applied to the RSVM cell and SVM cell. An associated method of use is further provided.
摘要翻译：本发明提供一种受控温度的热辅助磁存储器件。在特定实施例中，存在SVM单元阵列，每个SVM单元的特征在于磁化方向的可变方向，并且包括其中矫顽力在温度升高时降低的材料。此外，提供了与阵列的SVM单元基本相似并且非常接近的至少一个参考SVM（RSVM）单元。提供的反馈控制温度控制器从参考SVM单元接收对应于温度的反馈电压，并调整施加到RSVM单元和SVM单元的功率。还提供了相关联的使用方法。

3. 发明授权

US07239568B2 Current threshold detector 有权
标题翻译：电流阈值检测器
公开(公告)号：US07239568B2
公开(公告)日：2007-07-03
申请号：US10767428
申请日：2004-01-29
申请人： Frederick A. Perner , Manoj K. Bhattacharyya
发明人： Frederick A. Perner , Manoj K. Bhattacharyya
IPC分类号： G11C7/02 , G11C11/00
CPC分类号： G11C11/1673 , G11C11/1675 , G11C29/021 , G11C29/028 , G11C29/24 , G11C29/50008 , G11C2029/5002 , G11C2029/5006
摘要： A magnetic memory cell write current threshold detector. The magnetic memory cell write current threshold detector includes a first MRAM test cell receiving a write current and sensing when the write current exceeds a first threshold, and a second MRAM test cell receiving the write current and sensing when the write current exceeds a second threshold.
摘要翻译：磁存储单元写入电流阈值检测器。磁存储单元写入电流阈值检测器包括第一MRAM测试单元，其接收写入电流并检测写入电流是否超过第一阈值;以及第二MRAM测试单元接收写入电流并感测写入电流超过第二阈值时。

4. 发明授权

US06791872B2 Method and article for concentrating fields at sense layers 有权
公开(公告)号：US06791872B2
公开(公告)日：2004-09-14
申请号：US10652446
申请日：2003-08-29
申请人： Darrel Bloomquist , Manoj K. Bhattacharyya , Thomas C. Anthony
发明人： Darrel Bloomquist , Manoj K. Bhattacharyya , Thomas C. Anthony
IPC分类号： G11C1100
CPC分类号： G11C11/16 , H01L27/222
摘要： A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.

5. 发明授权

US06607924B2 Solid-state memory with magnetic storage cells 有权
公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
申请人： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
发明人： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

6. 发明授权

US5930087A Robust recording head for near-contact operation 失效
标题翻译：坚固的记录头，用于近距离操作
公开(公告)号：US5930087A
公开(公告)日：1999-07-27
申请号：US974420
申请日：1997-11-20
申请人： James A. Brug , Manoj K. Bhattacharyya , Lung T. Tran , Thomas C. Anthony
发明人： James A. Brug , Manoj K. Bhattacharyya , Lung T. Tran , Thomas C. Anthony
IPC分类号： G11B5/11 , G11B5/33 , G11B5/39 , G11B5/40 , G11B19/04 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/33 , G11B5/332 , G11B5/3903 , G11B5/3909 , G11B5/3919 , G11B5/40 , H01F10/3268 , G11B19/04 , G11B5/11 , G11B5/3912 , G11B5/3967
摘要： A robust recording head with a spin tunneling sensing element separated from an interface between the recording head and a recording media so as not to be affected by collisions and other ill effects at the interface between the recording head and the recording media. The spin tunneling sensing element includes a pair of magnetic elements wherein one of the magnetic elements functions as a flux guide that conducts magnetic flux emanating from the recording media away from the interface to an active area of the spin tunneling sensing element.
摘要翻译：一种坚固的记录头，其具有与记录头和记录介质之间的接口分开的自旋隧道感测元件，以便不受记录头和记录介质之间的界面处的碰撞和其它不良影响的影响。自旋隧道感测元件包括一对磁性元件，其中一个磁性元件用作将从记录介质发出的磁通远离界面移动到自旋隧道感应元件的有效区域的磁通引导件。

7. 发明授权

US06740947B1 MRAM with asymmetric cladded conductor 有权
标题翻译： MRAM具有非对称包层导体
公开(公告)号：US06740947B1
公开(公告)日：2004-05-25
申请号：US10293350
申请日：2002-11-13
申请人： Manoj K. Bhattacharyya , Thomas C. Anthony
发明人： Manoj K. Bhattacharyya , Thomas C. Anthony
IPC分类号： H01L2348
CPC分类号： G11C11/15 , H01L27/222 , H01L2924/0002 , H01L2924/00
摘要： An asymmetric cladded conductor structure for a magnetic field sensitive memory cell is disclosed. One or both of the conductors that cross the memory cell can include an asymmetric cladding that covers a top surface and only a portion of the opposed side surfaces of the conductors such that the cladding on the opposed side surfaces is recessed along those opposed side surfaces in a direction away from a data layer of the memory cell. The cladding is recessed by an offset distance. The asymmetric cladding increases a reluctance of a closed magnetic path with a resulting decrease in magnetic coupling with the data layer. An aspect ratio of the memory cell can be reduced thereby increasing areal density.
摘要翻译：公开了一种用于磁场敏感存储单元的非对称包层导体结构。穿过存储器单元的一个或两个导体可以包括不对称包层，其覆盖导体的顶表面和仅相对侧表面的一部分，使得相对侧表面上的包层沿着相对的侧表面凹陷远离存储器单元的数据层的方向。包层凹进偏移距离。不对称包层增加了闭合磁路的磁阻，导致与数据层的磁耦合减少。可以减小存储单元的纵横比，从而增加面密度。

8. 发明授权

US07799581B2 Methods of forming magnetic memory devices 有权
标题翻译：形成磁存储器件的方法
公开(公告)号：US07799581B2
公开(公告)日：2010-09-21
申请号：US12187833
申请日：2008-08-07
申请人： Thomas C. Anthony , Darrel R. Bloomquist , Judy Bloomquist, legal representative , Manoj K. Bhattacharyya
发明人： Thomas C. Anthony , Darrel R. Bloomquist , Manoj K. Bhattacharyya
IPC分类号： H01L43/12
CPC分类号： G11C11/15
摘要： Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.
摘要翻译：用于创建存储器件的方法可以包括沉积感测层，图案化感测层以形成多个磁性数据单元，在多个数据单元上沉积分离层，在分离层上沉积参考层，以形成细长的磁性参考单元，其中细长磁性参考单元沿多个磁性数据单元中的一个以上不间断地延伸。

9. 发明授权

US07193259B2 Thermally written magnetic memory device 有权
标题翻译：热写磁存储器件
公开(公告)号：US07193259B2
公开(公告)日：2007-03-20
申请号：US10898279
申请日：2004-07-23
申请人： Manoj K. Bhattacharyya , Thomas C. Anthony
发明人： Manoj K. Bhattacharyya , Thomas C. Anthony
IPC分类号： H01L31/072
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675
摘要： A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.
摘要翻译：公开了一种热写磁存储器件。热写磁存储器件包括多个热写磁力隧道结器件。每个热写磁隧道结器件包括一个超顺磁性稳定的数据层。数据层在读取温度下包括高矫顽力，使得可以在读取温度下从数据层读取先前写入数据层的写入温度较高的数据位。数据层在写入温度较高时具有较低的矫顽力，并且数据在写入温度较高时被写入数据层。因此，在较低的读取温度下，热写磁存储器件是只读非易失性存储器，并且其中存储的数据可以被读取多次，但是在读取温度下不能将新数据写入数据层。

10. 发明授权

US06727105B1 Method of fabricating an MRAM device including spin dependent tunneling junction memory cells 有权
标题翻译：制造包括自旋相关隧道结存储器单元的MRAM器件的方法
公开(公告)号：US06727105B1
公开(公告)日：2004-04-27
申请号：US09514934
申请日：2000-02-28
申请人： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
发明人： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
IPC分类号： H01L2100
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01L27/222 , H01L43/08
摘要： A spin dependent tunneling (“SDT”) junction of a memory cell for a Magnetic Random Access Memory (“MRAM”) device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.
摘要翻译：用于磁随机存取存储器（“MRAM”）器件的存储器单元的自旋相关隧道（“SDT”）结包括钉扎铁磁层，随后是绝缘隧道势垒和感测铁磁层。在制造MRAM器件期间，在形成钉扎层之后但在形成绝缘隧道势垒之前，被钉扎层的暴露表面变平。被钉扎层的暴露表面可以通过离子蚀刻工艺变平。

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