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1. 发明授权

US06479821B1 Thermally induced phase switch for laser thermal processing 有权
标题翻译：用于激光热处理的热诱导相位开关
公开(公告)号：US06479821B1
公开(公告)日：2002-11-12
申请号：US09659094
申请日：2000-09-11
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , David A. Markle , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , David A. Markle , Michael O. Thompson
IPC分类号： G03G516
CPC分类号： H01L21/268 , G03G5/16
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g., solid) to a second phase (e.g., liquid or vapor) at a phase transition temperature (TP). During this phase change, the phase switch layer absorbs heat but does not significantly change temperature. This limits the temperature of the absorber layer and the process region since both are close to the phase change layer.
摘要翻译：一种用于控制从辐射脉冲（10）暴露于工件（W）的处理区域（30）的热量的方法，装置和系统，其可以是扫描光束（B）的形式，，使用热感应相位层（60）。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收辐射并将吸收的辐射转化成热。相位开关层沉积在吸收层的上方或下方。相位开关层可以包括一个或多个薄膜层，并且可以包括绝热层和相变层。由于它们非常接近，覆盖处理区域的相位开关层的部分具有接近处理区域的温度的温度。在相转变温度（TP）下，相位开关层的相位从第一相（例如，固体）变为第二相（例如，液体或蒸气）。在该相变期间，相开关层吸热，但不会明显改变温度。这限制了吸收层和工艺区域的温度，因为它们都接近于相变层。

2. 发明授权

US06495390B2 Thermally induced reflectivity switch for laser thermal processing 有权
标题翻译：用于激光热处理的热感应反射开关
公开(公告)号：US06495390B2
公开(公告)日：2002-12-17
申请号：US09940102
申请日：2001-08-27
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
IPC分类号： H01L2100
CPC分类号： B23K26/18 , B23K26/009 , H01L21/268 , H01L21/324
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation. This, in turn, limits the amount of heat transferred to the process region from the absorber layer.
摘要翻译：一种用于通过使用热诱导反射率开关层（60）从激光辐射（10）曝光来控制传送到工件（W）的处理区域（30）的热量的方法，装置和系统。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收激光辐射并将吸收的辐射转化成热。反射开关层（60）沉积在吸收层顶部。反射开关层可以包括一个或多个薄膜层，并且优选地包括热绝缘体层和过渡层。覆盖处理区域的反射开关层的部分具有对应于处理区域的温度的温度。反射率开关层的反射率在临界温度从低反射率状态变为高反射率状态，以通过反射入射辐射来限制吸收层吸收的辐射量。这反过来限制了从吸收层传递到处理区域的热量。

3. 发明授权

US06635588B1 Method for laser thermal processing using thermally induced reflectivity switch 有权
标题翻译：使用热诱导反射率开关的激光热处理方法
公开(公告)号：US06635588B1
公开(公告)日：2003-10-21
申请号：US10078842
申请日：2002-02-19
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
IPC分类号： H01L2126
CPC分类号： H01L21/02686 , B23K26/009 , B23K26/18 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： Method for controlling heat transferred to a workpiece (W) process region (30) from laser radiation (10) using a thermally induced reflectivity switch layer (60). A film stack (6) is formed having an absorber layer (50) atop the workpiece with a portion covering the process region. The absorber layer absorbs and converts laser radiation into heat. Reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer comprises one or more layers, e.g. thermal insulator and reflectivity transition layers. The reflective switch layer covering the process region has a temperature related to the temperature of the process region. Reflectivity of the switch layer changes from a low to a high reflectivity state at a critical temperature of the process region, limiting radiation absorbed by the absorber layer by reflecting incident radiation when switched. This limits the amount of heat transferred to the process region from the absorber layer.
摘要翻译：用于使用热诱导反射率开关层（60）控制从激光辐射（10）传送到工件（W）处理区域（30）的热的方法。一个薄膜叠层（6）被形成为具有覆盖工艺区域的部分的工件上方的吸收层（50）。吸收层吸收并将激光辐射转换成热。反射开关层（60）沉积在吸收层的顶部。反射开关层包括一个或多个层，例如隔热层和反射层过渡层。覆盖处理区域的反射开关层具有与处理区域的温度相关的温度。开关层的反射率在处理区域的临界温度从低反射率状态变化到高反射率状态，通过在切换时反射入射辐射来限制吸收层吸收的辐射。这限制了从吸收层传递到处理区域的热量。

4. 发明授权

US06303476B1 Thermally induced reflectivity switch for laser thermal processing 有权
标题翻译：用于激光热处理的热感应反射开关
公开(公告)号：US06303476B1
公开(公告)日：2001-10-16
申请号：US09592184
申请日：2000-06-12
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
IPC分类号： H01L21245
CPC分类号： B23K26/18 , B23K26/009 , H01L21/268 , H01L21/324
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation. This, in turn, limits the amount of heat transferred to the process region from the absorber layer.
摘要翻译：一种用于通过使用热诱导反射率开关层（60）从激光辐射（10）曝光来控制传送到工件（W）的处理区域（30）的热量的方法，装置和系统。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收激光辐射并将吸收的辐射转化成热。反射开关层（60）沉积在吸收层顶部。反射开关层可以包括一个或多个薄膜层，并且优选地包括热绝缘体层和过渡层。覆盖处理区域的反射开关层的部分具有对应于处理区域的温度的温度。反射率开关层的反射率在临界温度从低反射率状态变为高反射率状态，以通过反射入射辐射来限制吸收层吸收的辐射量。这反过来限制了从吸收层传递到处理区域的热量。

5. 发明授权

US06383956B2 Method of forming thermally induced reflectivity switch for laser thermal processing 有权
标题翻译：形成用于激光热处理的热致反射开关的方法
公开(公告)号：US06383956B2
公开(公告)日：2002-05-07
申请号：US09933795
申请日：2001-08-20
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
IPC分类号： H01L21324
CPC分类号： B23K26/18 , B23K26/009 , H01L21/268 , H01L21/324
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation. This, in turn, limits the amount of heat transferred to the process region from the absorber layer.
摘要翻译：一种用于通过使用热诱导反射率开关层（60）从激光辐射（10）曝光来控制传送到工件（W）的处理区域（30）的热量的方法，装置和系统。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收激光辐射并将吸收的辐射转化成热。反射开关层（60）沉积在吸收层顶部。反射开关层可以包括一个或多个薄膜层，并且优选地包括热绝缘体层和过渡层。覆盖处理区域的反射开关层的部分具有对应于处理区域的温度的温度。反射率开关层的反射率在临界温度从低反射率状态变为高反射率状态，以通过反射入射辐射来限制吸收层吸收的辐射量。这反过来限制了从吸收层传递到处理区域的热量。

6. 发明授权

US06825101B1 Methods for annealing a substrate and article produced by such methods 有权
标题翻译：通过这种方法制备的基板和制品的退火方法
公开(公告)号：US06825101B1
公开(公告)日：2004-11-30
申请号：US09536927
申请日：2000-03-27
申请人： Andrew M. Hawryluk , David A. Markle , Somit Talwar
发明人： Andrew M. Hawryluk , David A. Markle , Somit Talwar
IPC分类号： H01L2120
CPC分类号： H01L21/324 , H01J2237/316 , H01L21/263 , H01L21/2636 , H01L21/265 , H01L21/26506 , H01L21/26513
摘要： A method of this invention includes annealing at least one region of a substrate with a short pulse of particles. The particles can be electrons, protons, alpha particles, other atomic or molecular ions or neutral atoms and molecules. The substrate can be composed of a semiconductor material, for example. The particles can include dopant atoms such as p-type dopant atoms such as boron (B), aluminum (Al), gallium (Ga), or indium (In), and n-type dopant atomic species including arsenic (As), phosphorus (P), or antimony (Sb). The particles can also include silicon (Si) or germanium (Ge) atoms or ionized gas atoms including those of hydrogen (He), oxygen (O), nitrogen (N), neon (Ne), argon (Ar), or krypton (Kr). The particles can be used to anneal dopant atoms previously implanted into the substrate. Alternatively, the particle species can be chosen to include the desired implant dopant, the energy of the particle may be chosen to achieve the desired implant depth, and the energy, dose and pulse duration may be chosen to anneal the implanted region during the pulse. This embodiment of the method performs implantation and activation in a single step. If no change in the electrical state of the substrate is required, the particles can include silicon (Si), and germanium (Ge) atoms.
摘要翻译：本发明的方法包括用短脉冲的颗粒退火衬底的至少一个区域。颗粒可以是电子，质子，α粒子，其他原子或分子离子或中性原子和分子。例如，基板可以由半导体材料构成。颗粒可以包括诸如硼（B），铝（Al），镓（Ga）或铟（In）的p型掺杂剂原子的掺杂剂原子，以及包括砷（As），磷（P）或锑（Sb）。这些颗粒还可以包括硅（Si）或锗（Ge）原子或包括氢（He），氧（O），氮（N），氖（Ne），氩（Ar）或氪 Kr）。颗粒可以用于退火以前植入衬底中的掺杂剂原子。或者，可以选择粒子物种以包括所需的注入掺杂剂，可以选择粒子的能量以实现期望的注入深度，并且可以选择能量，剂量和脉冲持续时间以在脉冲期间退火注入区域。该方法的该实施例在单个步骤中执行植入和激活。如果不需要基板的电气状态的变化，则颗粒可以包括硅（Si）和锗（Ge）原子。

7. 发明授权

US06326219B2 Methods for determining wavelength and pulse length of radiant energy used for annealing 有权
标题翻译：用于确定用于退火的辐射能的波长和脉冲长度的方法
公开(公告)号：US06326219B2
公开(公告)日：2001-12-04
申请号：US09286492
申请日：1999-04-05
申请人： David A. Markle , Somit Talwar , Andrew M. Hawryluk
发明人： David A. Markle , Somit Talwar , Andrew M. Hawryluk
IPC分类号： H01L2100
CPC分类号： H01L29/66575 , H01L21/26513 , H01L21/268 , H01L21/28079 , H01L21/324
摘要： The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed. In this case the radiant energy pulse causes the source and drain regions to crystallize with the same crystallographic orientation as the underlying substrate with the dopant ions incorporated into the crystalline lattice so that the source and drain regions are activated. To enhance absorption of the radiant energy used for annealing the doped regions, an anti-reflective layer can be formed over the doped regions before exposure. The radiant energy can be generated by a laser or other relatively intense, pulsed, radiant energy source. Selection of the source should be based on efficiency, the ability to distribute energy uniformly over an extended area and the ability to accurately control the energy content of a single pulse.
摘要翻译：本发明涉及用于确定用于退火或激活已经通过注入掺杂剂离子掺杂的集成晶体管器件的源极和漏极区域的辐射能的波长，脉冲长度和其它重要特性的方法。通常，辐射能脉冲被确定为具有450-900纳米的波长，0.1至50纳秒的脉冲长度和0.1至1.0焦耳/平方厘米的曝光能量。所确定的波长，脉冲长度和能量剂量的辐射能量脉冲被引导到源极和漏极区域以触发激活。在掺杂区域变为无定形的情况下，活化需要使用边界处的晶体结构作为晶种进行结晶。在这种情况下，辐射能量脉冲导致源极和漏极区域以与底部衬底相同的晶体取向结晶，掺杂剂离子结合到晶格中，使得源极和漏极区域被激活。为了增强用于退火掺杂区域的辐射能的吸收，可以在曝光之前在掺杂区域上形成抗反射层。辐射能可以由激光或其他相对强烈的脉冲辐射能源产生。源的选择应基于效率，均匀分布在扩展区域上的能力以及准确控制单脉冲能量含量的能力。

8. 发明授权

US06570656B1 Illumination fluence regulation system and method for use in thermal processing employed in the fabrication of reduced-dimension integrated circuits 有权
标题翻译：用于制造低维集成电路的热处理中的照明能量调节系统和方法
公开(公告)号：US06570656B1
公开(公告)日：2003-05-27
申请号：US09546114
申请日：2000-04-10
申请人： James B. Owens, Jr. , Somit Talwar , Andrew M. Hawryluk , Yun Wang
发明人： James B. Owens, Jr. , Somit Talwar , Andrew M. Hawryluk , Yun Wang
IPC分类号： G03G1508
CPC分类号： B23K26/0006 , B23K2101/40 , B23K2103/56
摘要： The closed loop embodiment includes a pulsed laser controller to selectively operate a pulsed laser in a lower-power probe mode or a higher power operational mode. In lower-power probe mode, values of eT (total radiation energy flooding ICs on a silicon wafer), er (fraction of eT specularly reflected), es (fraction of eT scattered) and es (fraction of eT transmitted through wafer) are obtained. A value for ea (fraction of eT absorbed wafer) is calculated i.e. ea=eT−(er+es+et), and ea used by pulsed laser controller with pulsed laser in higher power operational mode to adjust pulsed laser fluence over the duration of a pulse to provide flooding radiation energy sufficient to melt an amorphized silicon surface layer beneath radiation-absorbent material, yet insufficient to melt crystalline silicon or ablate radiation-absorbent material. Open loop embodiment substitutes a separate low-power probe laser for operation in lower-power probe mode.
摘要翻译：闭环实施例包括脉冲激光控制器，以选择性地操作低功率探测模式或较高功率操作模式的脉冲激光。在低功率探测模式下，获得eT（硅晶片上的总辐射能量驱动IC），er（eT镜面反射的分数），es（eT散射的分数）和es（通过晶片传输的eT的分数）的值。计算ea（eT吸收晶片的分数）的值，即ea = eT-（er + es + et），以及脉冲激光控制器在较高功率操作模式下使用脉冲激光控制器的ea，以调整脉冲激光注量提供足以熔化放射线吸收材料下面的非晶硅表面层的淹没辐射能量的脉冲，但不足以熔化晶体硅或消融辐射吸收材料。开环实施例将单独的低功率探头激光器替代为在较低功率探测模式下操作。

9. 发明授权

US06531681B1 Apparatus having line source of radiant energy for exposing a substrate 有权
标题翻译：具有用于暴露衬底的辐射能的线源的设备
公开(公告)号：US06531681B1
公开(公告)日：2003-03-11
申请号：US09536869
申请日：2000-03-27
申请人： David A. Markle , Andrew M. Hawryluk , Hwan J. Jeong
发明人： David A. Markle , Andrew M. Hawryluk , Hwan J. Jeong
IPC分类号： B23K2606
CPC分类号： G03F7/70558 , B23K26/0738 , G03F7/70225 , G03F7/70391 , H01L21/67115
摘要： Radiant energy line source(s) (e.g., laser diode array) and anamorphic relay receiving radiant energy therefrom and directing that energy to a substrate in a relatively uniform line image. The line image is scanned with respect to the substrate for treatment thereof. Good uniformity is provided even when the line source is uneven. Optionally, delimiting aperture(s) located in the anamorphic relay focal plane and a subsequent imaging relay are includeable to permit substrate exposure in strips with boundaries between adjacent strips within scribe lines between circuits. An anamorphic relay focal plane mask with a predetermined pattern can be used to define portions of the substrate to be treated with the substrate and mask scanning motions synchronized with each other. Control of source output, and position/speed of the substrate, with respect to the line image, allows uniform dose and required magnitude over the substrate.
摘要翻译：辐射能量线源（例如，激光二极管阵列）和变形继电器从其接收辐射能，并将能量引导到相对均匀的线图像中的衬底。相对于基板扫描线图像以进行处理。即使线源不均匀，也能提供良好的均匀性。可选地，定位在变形继电器焦平面中的孔径和随后的成像继电器可包括允许基板暴露在条带之间，其中在电路之间的划线内的相邻条带之间具有边界。可以使用具有预定图案的变形继电器焦平面掩模来限定待用基板的部分，并且掩模扫描运动彼此同步。源极输出的控制和基板的位置/速度相对于线图像，允许在衬底上均匀的剂量和所需的幅度。

10. 发明授权

US06671235B1 Method of and apparatus for defining disk tracks in magnetic recording media 有权
标题翻译：在磁记录介质中定义磁盘轨迹的方法和装置
公开(公告)号：US06671235B1
公开(公告)日：2003-12-30
申请号：US09536867
申请日：2000-03-27
申请人： Andrew M. Hawryluk , Robert D. Hempstead , David A. Markle
发明人： Andrew M. Hawryluk , Robert D. Hempstead , David A. Markle
IPC分类号： G11B1300
CPC分类号： G11B5/82 , G11B5/012 , G11B5/59633 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021
摘要： A method of, and apparatus for, defining disk tracks in magnetic recording media. The track-writing apparatus (20) is capable of forming tracks (340) with a track width (TW) and track spaces (350) with a space width (SW) on a magnetic media disk (70) having an upper surface (70S), wherein the disk comprises a magnetic medium with a thermal diffusion length (X). The apparatus comprises, in order along an optical axis (A1), a laser light source (30) capable of providing a pulsed laser light beam (B1), a light pipe (32), and illumination shaping optical system (40) that provides substantially uniform illumination over an exposure region (ER), and a phase plate (60) having a phase grating (210) with a grating period (p), arranged proximate and substantially parallel to the upper surface of the disk so as to form an periodic irradiance distribution (380) at the surface of the disk when the phase plate is illuminated with the exposure region. The irradiance distribution is capable of heating one or more regions of the disk to beyond the Curie temperature of the magnetic media. A method of defining the disk tracks using Spatial Period Division (SPD) with the track writing apparatus described above by forming closed annular demagnetized spaces in a periodic magnetized pattern (300) formed in the disk is also disclosed.
摘要翻译：一种用于在磁记录介质中定义磁盘轨迹的方法和设备。轨道写入装置（20）能够在具有上表面（70S）的磁性介质盘（70）上形成具有轨道宽度（TW）的轨道（340）和具有空间宽度（SW）的轨道空间（350）），其中盘包括具有热扩散长度（X）的磁性介质。该装置沿着光轴（A1）依次包括能够提供脉冲激光束（B1）的激光源（30），光管（32）和照明整形光学系统（40），其提供以及具有光栅周期（p）的相位光栅（210）的相位板（60），该相位板（60）布置成与盘的上表面接近且基本平行，从而形成当相位板用曝光区域照亮时，盘的表面处的周期性辐照度分布（380）。辐照度分布能够将盘的一个或多个区域加热到超过磁性介质的居里温度。还公开了通过在形成在盘中的周期性磁化图案（300）中形成闭合的环形消磁空间来定义使用上述轨道写入装置的空间周期分割（SPD）的盘轨迹的方法。

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