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1. 发明授权

US5399521A Method of semiconductor layer growth by MBE 失效
标题翻译：通过MBE生长半导体层的方法
公开(公告)号：US5399521A
公开(公告)日：1995-03-21
申请号：US133699
申请日：1993-10-08
申请人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
发明人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
IPC分类号： C30B25/02 , C23C14/22 , C30B23/02 , C30B23/08 , H01L21/203 , H01L21/331 , H01L21/66 , H01L29/205 , H01L29/73 , H01L29/737
CPC分类号： H01L22/26 , B24B37/013 , B82Y10/00 , B82Y15/00 , C30B23/002 , C30B29/40
摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
摘要翻译：分子束外延（202）通过集成质谱仪（204）信号的反馈而增长层厚度控制（206）。实例包括具有多个AlAs，InGaAs和InAs层的III-V族化合物结构，如共振隧道二极管所用。

2. 发明授权

US5556462A Growth method by repeatedly measuring flux in MBE chamber 失效
标题翻译：通过重复测量MBE室中的通量的生长方法
公开(公告)号：US5556462A
公开(公告)日：1996-09-17
申请号：US349713
申请日：1994-12-05
申请人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
发明人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
IPC分类号： C30B25/02 , C23C14/22 , C30B23/02 , C30B23/08 , H01L21/203 , H01L21/331 , H01L21/66 , H01L29/205 , H01L29/73 , H01L29/737 , C30B23/00
CPC分类号： H01L22/26 , B24B37/013 , B82Y10/00 , B82Y15/00 , C30B23/002 , C30B29/40
摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
摘要翻译：分子束外延（202）通过集成质谱仪（204）信号的反馈而增长层厚度控制（206）。实例包括具有多个AlAs，InGaAs和InAs层的III-V族化合物结构，如共振隧道二极管所用。

3. 发明授权

US5082522A Method for forming patterned diamond thin films 失效
标题翻译：用于形成图案化金刚石薄膜的方法
公开(公告)号：US5082522A
公开(公告)日：1992-01-21
申请号：US567423
申请日：1990-08-14
申请人： Andrew J. Purdes , Francis G. Celii
发明人： Andrew J. Purdes , Francis G. Celii
IPC分类号： C30B25/02 , C30B25/04 , H01L21/20 , H01L21/314 , H01L21/768 , H01L23/532
CPC分类号： H01L23/5329 , C30B25/02 , C30B25/04 , C30B29/04 , H01L21/02381 , H01L21/02425 , H01L21/02444 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/3146 , H01L21/76801 , H01L2924/0002
摘要： Preferred embodiments mask select regions of a circuit surface (141) prior to abrading the surface with diamond particles to form nucleation sites (200). The mask (150) is then removed prior to forming a diamond layer (160). Diamond layer (160) grows on the surface except in those regions wherein the mask (150) prevented the formation of nucleation sites (200).
摘要翻译：优选实施例在用金刚石颗粒研磨表面以形成成核位点（200）之前掩蔽电路表面（141）的选择区域。然后在形成金刚石层（160）之前去除掩模（150）。金刚石层（160）在表面上生长，除了掩模（150）防止形成成核位点（200）的那些区域之外。

4. 发明授权

US4450042A Plasma etch chemistry for anisotropic etching of silicon 失效
标题翻译：用于各向异性蚀刻硅的等离子体蚀刻化学
公开(公告)号：US4450042A
公开(公告)日：1984-05-22
申请号：US395205
申请日：1982-07-06
申请人： Andrew J. Purdes
发明人： Andrew J. Purdes
IPC分类号： C01B33/00 , C01B33/02 , C04B41/91 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/3065 , H01L21/32137 , Y10S438/963
摘要： A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl.sub.3 has Br.sub.2 added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr.sub.4. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-Cl-Br compound. The Br which adsorbs on the sidewalls of the etched silicon protects them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon.
摘要翻译：公开了允许硅完全垂直蚀刻的等离子体蚀刻化学。含有Cl的化合物如BCl 3在其中添加了Br2，容易进行硅的各向异性蚀刻。这是由于SiBr4的低挥发性。对于放电的硅表面进行离子轰击，允许硅作为Si-Cl-Br化合物的挥发（蚀刻）。吸附在蚀刻硅的侧壁上的Br可防止蚀刻。这种新的等离子体蚀刻化学产生非常光滑的蚀刻表面，并且蚀刻速率对硅的电导率相对不敏感。

5. 发明授权

US5952059A Forming a piezoelectric layer with improved texture 失效
标题翻译：形成具有改进纹理的压电层
公开(公告)号：US5952059A
公开(公告)日：1999-09-14
申请号：US947846
申请日：1997-10-09
申请人： Edward A. Beam, III , Andrew J. Purdes
发明人： Edward A. Beam, III , Andrew J. Purdes
IPC分类号： C23C14/00 , C30B23/02 , C30B25/02 , C30B25/18 , H01L41/22 , C23C16/34
CPC分类号： C30B23/02 , C23C14/0026 , C30B25/02 , C30B25/18 , C30B29/16 , C30B29/403 , H01L41/316
摘要： A method is provided for forming a piezoelectric layer with improved texture. In the method, a metallic material is evaporated. A noble gas is combined with a reactant gas. An atomic reactant gas flow is generated from the combined gas using a plasma source. The atomic reactant gas flow is introduced to the evaporated metallic material in the presence of a substrate under molecular flow pressure conditions to form a piezoelectric layer with improved texture on the surface of the substrate.
摘要翻译：提供了一种用于形成具有改进的纹理的压电层的方法。在该方法中，金属材料蒸发。惰性气体与反应气体组合。使用等离子体源从组合气体产生原子反应气体流。在分子流压力条件下，在衬底存在下，将原子反应气体流引入到蒸发的金属材料中，以在衬底的表面上形成具有改进纹理的压电层。

6. 发明授权

US5006203A Diamond growth method 失效
标题翻译：钻石生长法
公开(公告)号：US5006203A
公开(公告)日：1991-04-09
申请号：US231750
申请日：1988-08-12
申请人： Andrew J. Purdes
发明人： Andrew J. Purdes
IPC分类号： C30B29/04 , C04B41/50 , C23C16/02 , C23C16/26 , C23C16/27 , C30B25/02 , H01L21/20 , H01L21/205 , H01L21/31
CPC分类号： C23C16/271 , C04B41/5002 , C23C16/0272 , C23C16/26 , C30B25/02 , C30B29/04 , H01L21/02381 , H01L21/02444 , H01L21/02527 , H01L21/0262 , H01L21/02658 , H01L21/02664 , Y10S427/103
摘要： Preferred embodiments first adjust reactor conditions to grow a diamondlike film (114) on a silicon substrate (102). Reactor conditions are then adjusted to etch the diamondlike film surface, providing a high density of diamond nucleation sites (108). Finally, the reactor conditions are adjusted to grow a uniform diamond film (116) on the conditioned diamondlike surface.
摘要翻译：优选实施例首先调节反应器条件以在硅衬底（102）上生长类金刚石膜（114）。然后调节反应器条件以蚀刻金刚石膜表面，提供高密度的金刚石成核位点（108）。最后，调节反应器条件以在调节的金刚石表面上生长均匀的金刚石膜（116）。

7. 发明授权

US5175019A Method for depositing a thin film 失效
标题翻译：沉积薄膜的方法
公开(公告)号：US5175019A
公开(公告)日：1992-12-29
申请号：US769938
申请日：1991-09-30
申请人： Andrew J. Purdes , Francis G. Celli
发明人： Andrew J. Purdes , Francis G. Celli
IPC分类号： B01J19/12 , C23C16/511 , H01J37/32
CPC分类号： H01J37/32192 , B01J19/126 , C23C16/511 , H01J37/32623 , B01J2219/0894 , H01J2237/332
摘要： A microwave plasma rector is disclosed comprising a vacuum chamber, a microwave generator for generating a microwave standing wave therein, inlet and outlet ports, a susceptor within the chamber, at least one dielectric plate and a heater for heating the susceptor. The dielectric plate alters the shape of the produced plasma from a sphere to a short bulging cylinder. The modified plasma ball results in increased thickness uniformity of the deposited material.
摘要翻译：公开了一种微波等离子体检测器，其包括真空室，用于在其中产生微波驻波的微波发生器，入口和出口，腔室内的基座，至少一个电介质板和用于加热感受器的加热器。电介质板将产生的等离子体的形状从球体改变为短的凸起圆柱体。改进的等离子体球导致沉积材料的厚度均匀性增加。

8. 发明授权

US4830984A Method for heteroepitaxial growth using tensioning layer on rear substrate surface 失效
标题翻译：使用后衬底表面上的张紧层进行异质外延生长的方法
公开(公告)号：US4830984A
公开(公告)日：1989-05-16
申请号：US220917
申请日：1988-07-18
申请人： Andrew J. Purdes
发明人： Andrew J. Purdes
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/02546 , H01L21/02658 , H01L29/7842 , Y10S148/056 , Y10S148/072 , Y10S148/097 , Y10S148/149 , Y10S438/933 , Y10S438/938
摘要： A method, and products formed by such method, of providing a substantially planar surface to a layer of semiconducting material (24) formed on a first surface of a substrate (20), the substrate having a second surface opposite the first surface. The method comprising forming a layer (22) of a first material on the second surface of the substrate; forming a layer of the semiconducting material (24) on the first surface of the substrate; whereby said layer of said first material exerts a tensioning force on said second surface of the substrate (20) which countereffects a tensioning force exerted on said first surface of said substrate by said layer of semiconductor material (24) so that said first surface of said substrate has a substantially planar form. In some embodiments tensioning forces arise due to differential thermal expansion of said first material and said substrate and said semiconductor material and said substrate.
摘要翻译：一种方法以及通过这种方法形成的产品，在基板（20）的第一表面上形成的半导体材料层（24）提供基本平坦的表面，该基板具有与第一表面相对的第二表面。所述方法包括在所述基板的第二表面上形成第一材料层（22）; 在衬底的第一表面上形成半导体材料层（24）; 其中所述第一材料的所述层在所述衬底（20）的所述第二表面上施加张力，所述第二表面对由所述半导体材料层（24）施加在所述衬底的所述第一表面上的张力作用，使得所述第一表面的所述第一表面衬底具有基本上平面的形式。在一些实施例中，由于所述第一材料和所述衬底以及所述半导体材料和所述衬底的不同的热膨胀，产生张紧力。

9. 发明授权

US4699085A Chemical beam epitaxy system 失效
标题翻译：化学束外延系统
公开(公告)号：US4699085A
公开(公告)日：1987-10-13
申请号：US903357
申请日：1986-09-03
申请人： Andrew J. Purdes
发明人： Andrew J. Purdes
IPC分类号： C30B23/08 , C30B25/02 , C30B25/14 , C30B29/40 , H01L21/203 , H01L21/205 , C23C8/06
CPC分类号： C30B25/02
摘要： A chemical beam epitaxy system including a cylindrical vacuum chamber (32) with wafer heaters (42) affixed about the cylindrical wall, a rotatable wafer holder ring (40) with mounted wafer holders (38) adjacent the wafer heaters (42), and a central rotatble set of gas cells (44) for directing chemical beams (50, 54) across wafers (52) in the wafer holders (38).
摘要翻译：一种化学束外延系统，包括具有围绕圆柱形壁固定的晶片加热器（42）的圆柱形真空室（32），具有与晶片加热器（42）相邻的安装的晶片保持器（38）的可旋转晶片保持环（40）用于引导化学束（50,54）跨过晶片保持器（38）中的晶片（52）的中心旋转组的气室（44）。

10. 发明授权

US5170329A Stress free chip mount and method of manufacture 失效
标题翻译：无应力芯片安装及制造方法
公开(公告)号：US5170329A
公开(公告)日：1992-12-08
申请号：US766684
申请日：1991-09-27
申请人： Andrew J. Purdes
发明人： Andrew J. Purdes
IPC分类号： H01L23/373 , H01L23/40
CPC分类号： H01L23/40 , H01L23/3732 , H01L2924/0002 , Y10T29/4913
摘要： A chip mount is provided for mounting a chip on a circuit board to reduce stresses caused by thermal expansion mismatch between the chip and the circuit board. The chip mount includes a strip member secured to the chip and a guide layer secured to the circuit board. The guide layer includes slots formed therein for slidably receiving and holding the strip member such that upon expansion or contraction of the chip relative to the circuit board, the strip member slides in the slot to reduced stresses resulting from the expansion or contraction of the chip. The guide layer and the strip member are formed of materials that are generally non-reactive to inhibit bonding of the guide layer to the strip member.
摘要翻译：提供了一种芯片安装件，用于将芯片安装在电路板上，以减少由芯片和电路板之间的热膨胀失配引起的应力。芯片安装件包括固定到芯片的条状部件和固定到电路板的引导层。引导层包括形成在其中的槽，用于可滑动地容纳和保持条状构件，使得当芯片相对于电路板膨胀或收缩时，条形构件在槽中滑动以减少由于芯片的膨胀或收缩而产生的应力。引导层和条形部件由通常不反应以防止引导层与条状部件接合的材料形成。

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