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1. 发明授权

US5415128A Rotation induced superlattice 失效
标题翻译：旋转诱导超晶格
公开(公告)号：US5415128A
公开(公告)日：1995-05-16
申请号：US209693
申请日：1994-03-09
申请人： Yung-Chung Kao , Hung-Yu Lin , Alan C. Seabaugh , James H. Luscombe
发明人： Yung-Chung Kao , Hung-Yu Lin , Alan C. Seabaugh , James H. Luscombe
IPC分类号： C30B23/02 , H01L21/20 , H01L21/203 , H01L21/205 , H01S5/00
CPC分类号： B82Y10/00 , C30B23/002 , C30B23/02 , C30B29/68 , H01L21/0237 , H01L21/02392 , H01L21/02463 , H01L21/02507 , H01L21/02546 , Y10S438/925
摘要： This invention describes a multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of A(x-.DELTA.x)B(1-(x-.DELTA.x))/A(x+.DELTA.x)B(1-(x+.DELTA.x) where .DELTA.x is a function of the nonuniform focusing of the elemental or molecular source fluxes A and B. More specifically, superlattices 18 are formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering. The superlattice 18 is formed by nonuniformly directing the group III elements 22 and 24 onto the substrate 26 and rotating the substrate 26 across the beams. Periodic ordering is produced by rotation of the substrate 26 through a nonuniform distribution of source fluxes at the rotating substrate 26. The growth rate and substrate rotation rate together determine the superlattice period.
摘要翻译：本发明描述了一种多沉积系统，其中以非对称方式将元素或分子源通量引导到衬底上并以低转速旋转衬底，形成具有A（x-DELTA x）B（1）的组成的超晶格 - （x-DELTA x））/ A（x + DELTA x）B（1-（x + DELTA x）其中DELTA x是元素或分子源通量A和B的不均匀聚焦的函数。更具体地，超晶格18 通过不进行机械快门的分子束外延在InP上的三元和四元In（GaAl）As合金中形成超晶格18是通过不均匀地将III族元素22和24引导到衬底26上而形成的，并且使衬底26跨过光束通过基底26的旋转通过在旋转基底26处的源通量的不均匀分布产生周期性排序。生长速率和基底旋转速率一起确定超晶格周期。

2. 发明授权

US5084409A Method for patterned heteroepitaxial growth 失效
标题翻译：图案异质外延生长方法
公开(公告)号：US5084409A
公开(公告)日：1992-01-28
申请号：US543644
申请日：1990-06-26
申请人： Edward A. Beam, III , Yung-Chung Kao
发明人： Edward A. Beam, III , Yung-Chung Kao
IPC分类号： H01L21/302 , H01L21/20 , H01L21/203 , H01L21/3065 , H01L21/76 , H01L21/8252
CPC分类号： H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02463 , H01L21/02532 , H01L21/02546 , H01L21/02639 , H01L21/7605 , H01L21/8252 , Y10S148/10 , Y10S148/161
摘要： Shadow masking layer (130) is undercut during etch of sidewall layer (120) thus preventing sidewall growth during growth of heteroepitaxial region (140), resulting in a planar structure with a high integrity of crystal in the grown region (140).
摘要翻译：阴影掩模层（130）在蚀刻侧壁层（120）期间被底切，从而防止异质外延区域（140）生长期间的侧壁生长，导致在生长区域（140）中晶体的高完整性的平面结构。

3. 发明授权

US06521042B1 Semiconductor growth method 失效
标题翻译：半导体生长法
公开(公告)号：US06521042B1
公开(公告)日：2003-02-18
申请号：US08667660
申请日：1996-06-21
申请人： Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
发明人： Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
IPC分类号： C30B2516
CPC分类号： H01L29/882 , B82Y10/00 , B82Y15/00 , C30B23/002 , C30B29/40 , H01L21/02392 , H01L21/02463 , H01L21/02546 , H01L21/02631 , Y10T117/1004 , Y10T117/1008
摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
摘要翻译：基于过程模型，通过质谱仪（204）反馈信号生长层厚度控制（206）的分子束外延（202）。实例包括具有多个AlAs，InGaAs和InAs层的III-V族化合物结构，如共振隧道二极管所用。

4. 发明授权

US5985025A Semiconductor growth method 失效
公开(公告)号：US5985025A
公开(公告)日：1999-11-16
申请号：US382324
申请日：1995-02-01
申请人： Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
发明人： Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
IPC分类号： C30B23/08 , C30B23/02 , C30B29/68 , H01L21/203 , H01L21/338 , H01L29/812 , H01L29/88 , C30B25/16
CPC分类号： H01L29/882 , B82Y10/00 , B82Y15/00 , C30B23/002 , C30B29/40 , H01L21/02392 , H01L21/02463 , H01L21/02546 , H01L21/02631 , Y10T117/1004 , Y10T117/1008
摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.

5. 发明授权

US5399521A Method of semiconductor layer growth by MBE 失效
标题翻译：通过MBE生长半导体层的方法
公开(公告)号：US5399521A
公开(公告)日：1995-03-21
申请号：US133699
申请日：1993-10-08
申请人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
发明人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
IPC分类号： C30B25/02 , C23C14/22 , C30B23/02 , C30B23/08 , H01L21/203 , H01L21/331 , H01L21/66 , H01L29/205 , H01L29/73 , H01L29/737
CPC分类号： H01L22/26 , B24B37/013 , B82Y10/00 , B82Y15/00 , C30B23/002 , C30B29/40
摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
摘要翻译：分子束外延（202）通过集成质谱仪（204）信号的反馈而增长层厚度控制（206）。实例包括具有多个AlAs，InGaAs和InAs层的III-V族化合物结构，如共振隧道二极管所用。

6. 发明授权

US5391515A Capped anneal 失效
标题翻译：封盖退火
公开(公告)号：US5391515A
公开(公告)日：1995-02-21
申请号：US900226
申请日：1992-06-17
申请人： Yung-Chung Kao , Donald L. Plumton
发明人： Yung-Chung Kao , Donald L. Plumton
IPC分类号： H01L29/73 , H01L21/20 , H01L21/203 , H01L21/324 , H01L21/331 , H01L21/338 , H01L29/205 , H01L29/737 , H01L29/812
CPC分类号： H01L21/3245 , H01L21/02381 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02664 , Y10S148/003 , Y10S148/065 , Y10S438/902 , Y10S438/933
摘要： Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of Al.sub.x Ga.sub.1-x As (106), next annealing out defects with the Al.sub.x Ga.sub.1-x As cap (106) limiting desorption of gallium, lastly growing further GaAs (110) directly on the cap. The lattice matched cap is also used as an implant anneal cap.
摘要翻译：通过首先在硅（102）上生长GaAs（104），然后生长Al x Ga 1-x As（106）的晶格匹配帽来实现晶格不匹配的半导体材料（例如硅上的GaAs）的异质外延，然后用Al x Ga 1-x As 帽（106）限制镓的解吸，最后在帽上直接生长GaAs（110）。晶格匹配盖也用作植入退火盖。

7. 发明授权

US6139483A Method of forming lateral resonant tunneling devices 失效
标题翻译：形成横向共振隧穿装置的方法
公开(公告)号：US6139483A
公开(公告)日：2000-10-31
申请号：US97526
申请日：1993-07-27
申请人： Alan C. Seabaugh , Yung Chung Kao , Andrew J. Purdes , John N. Randall
发明人： Alan C. Seabaugh , Yung Chung Kao , Andrew J. Purdes , John N. Randall
IPC分类号： H01L21/334 , H01L29/772 , H01L21/20
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/66939 , H01L29/772 , Y10S438/962
摘要： A method of fabricating a quantum well device is presented which includes forming one or more quantum wells 48 by forming an epitaxy mask followed by selective deposition of one or more epitaxial layers. Selective deposition is accomplished by forming an epitaxy mask by sidewall defined masking, followed by epitaxial deposition of one or more layers (e.g. barrier layers 40 and 44 and a quantum layer 42) The epitaxy mask is formed by patterning an e-beam resist layer (e.g. polymethylmethacrylate 36), conformally depositing a glass layer (e.g. SiO.sub.2 38) on the resist, anisotropically etching the SiO.sub.2, and then removing the e-beam resist layer. The epitaxy mask fabrication technique allows patterning to define geometries that are much smaller than the beam itself and thereby provides the means required to define nanometer dimensioned horizontal (lateral) structures on and within epitaxial layers.
摘要翻译：提出了一种制造量子阱器件的方法，其包括通过形成外延掩模形成一个或多个量子阱48，随后选择性沉积一个或多个外延层。选择性沉积是通过用侧壁确定的掩模形成外延掩模，然后通过外延沉积一层或多层（例如阻挡层40和44和量子层42）来实现的。外延掩模是通过图案化电子束抗蚀剂层例如聚甲基丙烯酸甲酯36），在抗蚀剂上保形地沉积玻璃层（例如SiO 2 38），各向异性地蚀刻SiO 2，然后除去电子束抗蚀剂层。外延掩模制造技术允许图案化以限定比束本身小得多的几何形状，从而提供在外延层上和外延层中限定纳米尺寸的水平（横向）结构所需的手段。

8. 发明授权

US5556462A Growth method by repeatedly measuring flux in MBE chamber 失效
标题翻译：通过重复测量MBE室中的通量的生长方法
公开(公告)号：US5556462A
公开(公告)日：1996-09-17
申请号：US349713
申请日：1994-12-05
申请人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
发明人： Francis G. Celii , Yung-Chung Kao , Andrew J. Purdes
IPC分类号： C30B25/02 , C23C14/22 , C30B23/02 , C30B23/08 , H01L21/203 , H01L21/331 , H01L21/66 , H01L29/205 , H01L29/73 , H01L29/737 , C30B23/00
CPC分类号： H01L22/26 , B24B37/013 , B82Y10/00 , B82Y15/00 , C30B23/002 , C30B29/40
摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
摘要翻译：分子束外延（202）通过集成质谱仪（204）信号的反馈而增长层厚度控制（206）。实例包括具有多个AlAs，InGaAs和InAs层的III-V族化合物结构，如共振隧道二极管所用。

9. 发明授权

US5659188A Capped anneal 失效
标题翻译：封盖退火
公开(公告)号：US5659188A
公开(公告)日：1997-08-19
申请号：US475724
申请日：1995-06-07
申请人： Yung-Chung Kao , Donald L. Plumton
发明人： Yung-Chung Kao , Donald L. Plumton
IPC分类号： H01L29/73 , H01L21/20 , H01L21/203 , H01L21/324 , H01L21/331 , H01L21/338 , H01L29/205 , H01L29/737 , H01L29/812
CPC分类号： H01L21/3245 , H01L21/02381 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02664 , Y10S148/003 , Y10S148/065 , Y10S438/902 , Y10S438/933
摘要： Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of Al.sub.x Ga.sub.1-x As (106), next annealing out defects with the Al.sub.x Ga.sub.1-x As cap (106) limiting desorption of gallium, lastly growing further GaAs (110) directly on the cap. The lattice matched cap is also used as an implant anneal cap.
摘要翻译：通过首先在硅（102）上生长GaAs（104），然后生长Al x Ga 1-x As（106）的晶格匹配帽来实现晶格不匹配的半导体材料（例如硅上的GaAs）的异质外延，然后用Al x Ga 1-x As 帽（106）限制镓的解吸，最后在帽上直接生长GaAs（110）。晶格匹配盖也用作植入退火盖。

10. 发明授权

US5625204A Compound semiconductors and a method for thin film growth 失效
标题翻译：化合物半导体和薄膜生长方法
公开(公告)号：US5625204A
公开(公告)日：1997-04-29
申请号：US480722
申请日：1995-06-07
申请人： Yung-Chung Kao , Francis G. Celii
发明人： Yung-Chung Kao , Francis G. Celii
IPC分类号： C30B23/02 , H01L21/203 , H01L21/66 , H01L31/0328
CPC分类号： C30B29/40 , B24B37/013 , C30B23/002 , C30B29/42 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L22/26
摘要： A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.
摘要翻译：提供分子束外延（MBE）系统（10）以在化合物半导体衬底（40）上生长薄膜，外延层（44,46,48,50）。质谱仪检测器（95）用于监测和控制来自MBE系统（10）内的所选源（21,23,25,27）的通量。通过控制相对于衬底（40）的铟通量的温度和时间，可以在半导体衬底（40）上生长均匀的砷化铟镓（46,50）。产生具有均匀的摩尔分数浓度和减小的晶格应变的砷化铟镓的外延层（46）。

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