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1. 发明授权

US06654424B1 Method and device for tuning a first oscillator with a second oscillator and rotation rate sensor 有权
标题翻译：用于利用第二振荡器和转速传感器调谐第一振荡器的方法和装置
公开(公告)号：US06654424B1
公开(公告)日：2003-11-25
申请号：US09520250
申请日：2000-03-07
申请人： Andreas Thomae , Johannes Artzner , Reinhard Neul , Georg Bischopink , Karsten Funk , Markus Lutz
发明人： Andreas Thomae , Johannes Artzner , Reinhard Neul , Georg Bischopink , Karsten Funk , Markus Lutz
IPC分类号： H04L2500
CPC分类号： H03J7/02 , G01C19/56
摘要： In the method and device for tuning a first oscillator with a second oscillator respective response signals of the first oscillator are produced from corresponding frequency-shifted and/or phase-shifted signals of the second oscillator. The first oscillator is tuned to the second oscillator according to the difference of the respective response signals. For amplitude correction a quotient is formed by dividing an output signal by the sum of the response signals. The method and device according to the invention are especially useful in a rotation rate sensor. The invention also includes a rotation rate sensor, which includes a device for determining rotation rate from the oscillations of a first and second oscillator and the device for tuning the first oscillator with the second oscillator.
摘要翻译：在用第二振荡器调谐第一振荡器的方法和装置中，由第二振荡器的相应频移和/或相移信号产生第一振荡器的响应信号。根据各个响应信号的差异，第一振荡器被调谐到第二振荡器。对于幅度校正，通过将输出信号除以响应信号的和来形成商。根据本发明的方法和装置在旋转速率传感器中特别有用。本发明还包括旋转速率传感器，其包括用于从第一和第二振荡器的振荡确定转速的装置和用于利用第二振荡器调谐第一振荡器的装置。

2. 发明授权

US06360605B1 Micromechanical device 有权
标题翻译：微机械装置
公开(公告)号：US06360605B1
公开(公告)日：2002-03-26
申请号：US09608094
申请日：2000-06-30
申请人： Stefan Pinter , Martin Schoefthaler , Matthias Illing , Ralf Schellin , Helmut Baumann , Michael Fehrenbach , Dietrich Schubert , Georg Bischopink
发明人： Stefan Pinter , Martin Schoefthaler , Matthias Illing , Ralf Schellin , Helmut Baumann , Michael Fehrenbach , Dietrich Schubert , Georg Bischopink
IPC分类号： G01P1500
CPC分类号： G01P15/125 , B81B3/0008 , B81B3/0051 , B81B2201/0235 , G01P2015/0814
摘要： A micromechanical device, in particular an acceleration sensor, includes a seismic mass which is resiliently supported on a substrate via a first flexural spring device and which can be deflected in at least one direction by an acceleration, the deflection being able to be limited by a stop device. The stop device has at least one limit stop that is resiliently supported on the substrate via a second flexural spring device, the second flexural spring device having a greater flexural strength than the first flexural spring device.
摘要翻译：微机械装置，特别是加速度传感器，包括经由第一弯曲弹簧装置弹性地支撑在基板上并且可以通过加速度在至少一个方向上偏转的抗震块，所述偏转能够被停止装置止动装置具有至少一个通过第二弯曲弹簧装置弹性地支撑在基底上的止挡件，第二弯曲弹簧装置具有比第一弯曲弹簧装置更大的弯曲强度。

3. 发明授权

US07273764B2 Sensor with at least one micromechanical structure, and method for producing it 有权
标题翻译：具有至少一个微机械结构的传感器及其制造方法
公开(公告)号：US07273764B2
公开(公告)日：2007-09-25
申请号：US11028370
申请日：2005-01-03
申请人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
发明人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
IPC分类号： H01L21/00
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).
摘要翻译：本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个传感器的制造方法设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

4. 发明授权

US09021882B2 Ultrasound-based measuring device and method 有权
标题翻译：超声波测量装置及方法
公开(公告)号：US09021882B2
公开(公告)日：2015-05-05
申请号：US13329305
申请日：2011-12-18
申请人： Frank Schatz , Juergen Graf , Gottfried Flik , Georg Bischopink , Fabian Henrici
发明人： Frank Schatz , Juergen Graf , Gottfried Flik , Georg Bischopink , Fabian Henrici
IPC分类号： G01N29/00 , G01L11/06 , G01K11/22
CPC分类号： G01L11/06 , G01K11/22
摘要： An ultrasound-based measuring device includes a measurement body, at least one ultrasonic transmitter for coupling ultrasonic measurement signals into the measurement body, and at least one ultrasonic receiver for detecting the ultrasonic measurement signals reflected at an end face of the measurement body. The at least one ultrasonic transmitter emits both a longitudinal and a transverse measurement signal. The influence of a physical disturbance variable on the measurement section traversed by the measurement signals during a determination of a measurement pressure prevailing at the end face and/or of a measurement temperature prevailing at the end face can be taken into account on the basis of the propagation times and a difference between the propagation times of the longitudinal and transverse measurement signals reflected at the end face.
摘要翻译：超声波测量装置包括测量体，用于将超声波测量信号耦合到测量体中的至少一个超声波发射器，以及用于检测在测量体的端面反射的超声波测量信号的至少一个超声波接收器。所述至少一个超声波发射器发射纵向和横向测量信号。在确定端面处的测量压力和/或端面处的测量温度的确定期间，物理干扰变量对测量部分的测量部分的影响可以基于传播时间和在端面反射的纵向和横向测量信号的传播时间之间的差异。

5. 发明授权

US06936902B2 Sensor with at least one micromechanical structure and method for production thereof 有权
标题翻译：具有至少一个微机械结构的传感器及其制造方法
公开(公告)号：US06936902B2
公开(公告)日：2005-08-30
申请号：US10168584
申请日：2000-12-14
申请人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
发明人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , H01L29/82
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.
摘要翻译：传感器具有基础晶片，其具有传感器室，与基础晶片的传感器室一体化的至少一个硅基微机械结构，在传感器室的区域中覆盖基础晶片的至少一个覆盖物，所述覆盖物包括：第一层，其是沉积层并且可蚀刻介质和反应产物，以及作为密封层并位于第一层上方的密封第二层，作为第一层的沉积层在第一层的区域中是可渗透的传感器室到蚀刻介质和反应产物，用于透过的沉积层具有选自蚀刻开口，多孔区域和两者的结构。

6. 发明申请

US20130327163A1 MICROELECTROMECHANICAL SENSOR MODULE AND CORRESPONDING PRODUCTION METHOD 有权
标题翻译：微电子传感器模块及相应的生产方法
公开(公告)号：US20130327163A1
公开(公告)日：2013-12-12
申请号：US13992136
申请日：2011-10-14
申请人： Tjalf Pirk , Thomas Wagner , Ando Feyh , Georg Bischopink , Axel Franke
发明人： Tjalf Pirk , Thomas Wagner , Ando Feyh , Georg Bischopink , Axel Franke
IPC分类号： G01D21/02
CPC分类号： G01D21/02 , G01C19/5783 , G01P1/023 , H01L25/0657 , H01L2224/16145 , H01L2224/16245 , H01L2224/48145 , H01L2224/48245 , H01L2224/48247 , H01L2224/73257 , H01L2225/06506 , H01L2225/06513 , Y10T29/49128 , H01L2924/00012
摘要： A microelectromechanical sensor module includes a sensing mechanism for measuring an acceleration, pressure, air humidity or the like, a control mechanism for controlling the sensing mechanism, an energy supply mechanism for supplying the sensor module with energy, and a transmission mechanism for transmitting signals of the sensing mechanism. At least three of the mechanisms are integrated at the chip level in at least one chip in each case. A corresponding method is implemented to produce the microelectromechanical sensor module.
摘要翻译：微机电传感器模块包括用于测量加速度，压力，空气湿度等的感测机构，用于控制感测机构的控制机构，用于向传感器模块提供能量的能量供应机构，以及用于传送信号的传输机构传感机构。在每种情况下，至少有三个机构在芯片级集成在至少一个芯片中。实现相应的方法来产生微机电传感器模块。

7. 发明申请

US20050230708A1 Sensor with at least one micromechanical structure, and method for producing it 有权
标题翻译：具有至少一个微机械结构的传感器及其制造方法
公开(公告)号：US20050230708A1
公开(公告)日：2005-10-20
申请号：US11028370
申请日：2005-01-03
申请人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
发明人： Frank Reichenbach , Stefan Pinter , Frank Henning , Hans Artmann , Helmut Baumann , Franz Laemer , Michael Offenberg , Georg Bischopink
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , C30B1/00
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).
摘要翻译：本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个传感器的制造方法设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

8. 发明授权

US09829357B2 Microelectromechanical sensor module and corresponding production method 有权
公开(公告)号：US09829357B2
公开(公告)日：2017-11-28
申请号：US13992136
申请日：2011-10-14
申请人： Tjalf Pirk , Thomas Wagner , Ando Feyh , Georg Bischopink , Axel Franke
发明人： Tjalf Pirk , Thomas Wagner , Ando Feyh , Georg Bischopink , Axel Franke
IPC分类号： G01D21/02 , G01C19/5783 , H01L25/065 , G01P1/02
CPC分类号： G01D21/02 , G01C19/5783 , G01P1/023 , H01L25/0657 , H01L2224/16145 , H01L2224/16245 , H01L2224/48145 , H01L2224/48245 , H01L2224/48247 , H01L2224/73257 , H01L2225/06506 , H01L2225/06513 , Y10T29/49128 , H01L2924/00012
摘要： A microelectromechanical sensor module includes a sensing mechanism for measuring an acceleration, pressure, air humidity or the like, a control mechanism for controlling the sensing mechanism, an energy supply mechanism for supplying the sensor module with energy, and a transmission mechanism for transmitting signals of the sensing mechanism. At least three of the mechanisms are integrated at the chip level in at least one chip in each case. A corresponding method is implemented to produce the microelectromechanical sensor module.

9. 发明申请

US20120152022A1 Ultrasound-Based Measuring Device and Method 有权
标题翻译：超声波测量装置及方法
公开(公告)号：US20120152022A1
公开(公告)日：2012-06-21
申请号：US13329305
申请日：2011-12-18
申请人： Frank Schatz , Juergen Graf , Gottfried Flik , Georg Bischopink , Fabian Henrici
发明人： Frank Schatz , Juergen Graf , Gottfried Flik , Georg Bischopink , Fabian Henrici
IPC分类号： G01N29/00
CPC分类号： G01L11/06 , G01K11/22
摘要： An ultrasound-based measuring device includes a measurement body, at least one ultrasonic transmitter for coupling ultrasonic measurement signals into the measurement body, and at least one ultrasonic receiver for detecting the ultrasonic measurement signals reflected at an end face of the measurement body. The at least one ultrasonic transmitter emits both a longitudinal and a transverse measurement signal. The influence of a physical disturbance variable on the measurement section traversed by the measurement signals during a determination of a measurement pressure prevailing at the end face and/or of a measurement temperature prevailing at the end face can be taken into account on the basis of the propagation times and a difference between the propagation times of the longitudinal and transverse measurement signals reflected at the end face.
摘要翻译：超声波测量装置包括测量体，用于将超声波测量信号耦合到测量体中的至少一个超声波发射器，以及用于检测在测量体的端面反射的超声波测量信号的至少一个超声波接收器。所述至少一个超声波发射器发射纵向和横向测量信号。在确定端面处的测量压力和/或端面处的测量温度的确定期间，物理干扰变量对测量部分的测量部分的影响可以基于传播时间和在端面反射的纵向和横向测量信号的传播时间之间的差异。

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