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1. 发明授权

US06652355B2 Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers 有权
标题翻译：用于检测金属层化学机械抛光终点的方法和装置
公开(公告)号：US06652355B2
公开(公告)日：2003-11-25
申请号：US09874086
申请日：2001-06-04
申请人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek
发明人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.
摘要翻译：一种装置以及一种方法确定化学机械抛光衬底上的金属层的终点。该装置的方法包括使基板的表面与具有窗口的抛光垫接触; 引起基板和抛光垫之间的相对运动; 将光束引导通过窗口，抛光垫相对于基底的运动导致光束在穿过基底的路径中移动; 检测来自基板和保持环的光束反射; 产生与光束反射相关联的反射数据; 将反射数据分割成多个径向范围; 以及根据所述多个径向范围内的反射数据识别所述预定图案以建立所述端点。

2. 发明授权

US06296548B1 Method and apparatus for optical monitoring in chemical mechanical polishing 有权
标题翻译：化学机械抛光中光学监测的方法和装置
公开(公告)号：US06296548B1
公开(公告)日：2001-10-02
申请号：US09591187
申请日：2000-06-08
申请人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek , Manoocher Birang
发明人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek , Manoocher Birang
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.
摘要翻译：一种装置以及方法使基板的表面与具有窗口的抛光垫接触，引起基板和抛光垫之间的相对运动，并引导光束通过窗口，使得运动抛光垫相对于基底使得光束在穿过基底的路径中移动。检测来自基板的光束反射，并用于确定抛光参数，检测过程重复性和限定工艺。

3. 发明授权

US06280289B1 Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers 有权
公开(公告)号：US06280289B1
公开(公告)日：2001-08-28
申请号：US09184767
申请日：1998-11-02
申请人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek
发明人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

4. 发明授权

US06913511B2 Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers 有权
标题翻译：用于检测金属层化学机械抛光终点的方法和装置
公开(公告)号：US06913511B2
公开(公告)日：2005-07-05
申请号：US10722716
申请日：2003-11-25
申请人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek
发明人： Andreas Norbert Wiswesser , Judon Tony Pan , Boguslaw Swedek
IPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/06 , H01L21/321 , B49D1/00
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.
摘要翻译：一种装置以及一种方法确定化学机械抛光衬底上的金属层的终点。该装置的方法包括使基板的表面与具有窗口的抛光垫接触; 引起基板和抛光垫之间的相对运动; 将光束引导通过窗口，抛光垫相对于基底的运动导致光束在穿过基底的路径中移动; 检测来自基板和保持环的光束反射; 产生与光束反射相关联的反射数据; 将反射数据分割成多个径向范围; 以及根据所述多个径向范围内的反射数据识别所述预定图案以建立所述端点。

5. 发明授权

US06764380B2 Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing 有权
标题翻译：化学机械抛光时测量基底层厚度的方法和装置
公开(公告)号：US06764380B2
公开(公告)日：2004-07-20
申请号：US10342653
申请日：2003-01-14
申请人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek
发明人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek
IPC分类号： B24B4900
CPC分类号： G01B11/06 , B24B37/04 , B24B49/12 , B24D7/12 , G01B9/02021 , G01B9/02027
摘要： The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.
摘要翻译：在化学机械抛光期间原位测量基底上的层的厚度。光束通过抛光垫中的窗口分割，并且抛光垫相对于基板的运动导致光束在穿过基板表面的路径中移动。监测由反射离开衬底的光束产生的干涉信号，并且从干扰信号中提取多个强度测量值。每个强度测量对应于穿过衬底表面的路径中的采样区域。对于每个采样区域确定径向位置，并且根据径向位置将强度测量值分成多个径向范围。从与该径向范围相关联的强度测量的每个径向范围计算层厚度。

6. 发明授权

US06524165B1 Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing 有权
公开(公告)号：US06524165B1
公开(公告)日：2003-02-25
申请号：US09695002
申请日：2000-10-23
申请人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek
发明人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek
IPC分类号： B24B4900
CPC分类号： G01B11/06 , B24B37/04 , B24B49/12 , B24D7/12 , G01B9/02021 , G01B9/02027
摘要： The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

7. 发明授权

US07018271B2 Method for monitoring a substrate during chemical mechanical polishing 有权
标题翻译：在化学机械抛光期间监测基板的方法
公开(公告)号：US07018271B2
公开(公告)日：2006-03-28
申请号：US10869719
申请日：2004-06-15
申请人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek
发明人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek
IPC分类号： B24B49/00
CPC分类号： G01B11/06 , B24B37/04 , B24B49/12 , B24D7/12 , G01B9/02021 , G01B9/02027
摘要： The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.
摘要翻译：在化学机械抛光期间原位测量基底上的层的厚度。光束通过抛光垫中的窗口分割，并且抛光垫相对于基板的运动导致光束在穿过基板表面的路径中移动。监测由反射离开衬底的光束产生的干涉信号，并且从干扰信号中提取多个强度测量值。每个强度测量对应于穿过衬底表面的路径中的采样区域。对于每个采样区域确定径向位置，并且根据径向位置将强度测量值分成多个径向范围。从与该径向范围相关联的强度测量的每个径向范围计算层厚度。

8. 发明授权

US06986699B2 Method and apparatus for determining polishing endpoint with multiple light sources 失效
标题翻译：用多个光源确定抛光终点的方法和装置
公开(公告)号：US06986699B2
公开(公告)日：2006-01-17
申请号：US09851661
申请日：2001-05-08
申请人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek , Manoocher Birang
发明人： Andreas Norbert Wiswesser , Walter Schoenleber , Boguslaw Swedek , Manoocher Birang
IPC分类号： B24B49/12
CPC分类号： B24B49/12 , B24B37/013 , B24B49/04
摘要： A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.
摘要翻译：化学机械抛光装置包括用于支撑抛光垫的压板和用于在加工期间将衬底保持在抛光垫上的抛光头。衬底包括设置在晶片上的薄膜结构。第一光学系统包括产生撞击在基板的表面上的第一光束的第一光源和用于测量从基板的表面反射的光以产生测量的第一干涉信号的第一传感器。第二光学系统包括第二光源，用于产生入射到衬底的表面上的第二光束;以及第二传感器，用于测量从衬底的表面反射的光，以产生测量的第二干涉信号。第二光束具有与第一光束不同的波长。

9. 发明授权

US06607422B1 Endpoint detection with light beams of different wavelengths 失效
标题翻译：端点检测与不同波长的光束
公开(公告)号：US06607422B1
公开(公告)日：2003-08-19
申请号：US09669776
申请日：2000-09-25
申请人： Boguslaw Swedek , Andreas Norbert Wiswesser
发明人： Boguslaw Swedek , Andreas Norbert Wiswesser
IPC分类号： B24B4912
CPC分类号： B24B49/12 , B24B37/013 , B24B49/04
摘要： A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.
摘要翻译：化学机械抛光装置包括串联地用于确定抛光端点的两个光学系统。第一光学系统包括产生撞击在基板的表面上的第一光束的第一光源和用于测量从基板的表面反射的光以产生测量的第一干涉信号的第一传感器。第二光学系统包括第二光源以产生入射到衬底的表面上的第二光束和第二传感器，用于测量从衬底的表面反射的光以产生测量的第二干涉信号。第二光束具有与第一光束不同的波长。

10. 发明授权

US06494766B1 Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing 有权
标题翻译：化学机械抛光时测量基底层厚度的方法和装置
公开(公告)号：US06494766B1
公开(公告)日：2002-12-17
申请号：US09695601
申请日：2000-10-23
申请人： Andreas Norbert Wiswesser , Wallter Waiter Schoenleber , Boguslaw Swedek
发明人： Andreas Norbert Wiswesser , Wallter Waiter Schoenleber , Boguslaw Swedek
IPC分类号： B24B4900
CPC分类号： G01B11/06 , B24B37/04 , B24B49/12 , B24D7/12 , G01B9/02021 , G01B9/02027
摘要： The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.
摘要翻译：在化学机械抛光期间原位测量基底上的层的厚度。光束通过抛光垫中的窗口分割，并且抛光垫相对于基板的运动导致光束在穿过基板表面的路径中移动。监测由反射离开衬底的光束产生的干涉信号，并且从干扰信号中提取多个强度测量值。每个强度测量对应于穿过衬底表面的路径中的采样区域。对于每个采样区域确定径向位置，并且根据径向位置将强度测量值分成多个径向范围。从与该径向范围相关联的强度测量的每个径向范围计算层厚度。

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