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    • 4. 发明授权
    • Bus structure, memory chip and integrated circuit
    • 总线结构,存储芯片和集成电路
    • US07554875B2
    • 2009-06-30
    • US11700399
    • 2007-01-31
    • Christian SichertRainer BartenschlagerJens Polney
    • Christian SichertRainer BartenschlagerJens Polney
    • G11C8/00
    • G06F13/4243G11C7/1048G11C7/1051G11C7/1069G11C7/1078G11C7/1096
    • A bus structure comprises a plurality of driver circuits, each driver circuit comprising an input for a first signal and a terminal for an output signal wherein each driver circuit is capable of providing the output signal at the terminal upon receipt of the first signal, a parallel bus comprising a plurality of output signal lines at a receiving end, being connectable to a target component, each of the signal lines extending at least from the receiving end to the terminal of a different one of the plurality of driver circuits, such that a length of the output signal line between the receiving end and the respective driver circuits decreases in a connection order among the plurality of driver circuits, and a signal line coupled to each of the inputs of the driver circuits in the connection order.
    • 总线结构包括多个驱动器电路,每个驱动电路包括用于第一信号的输入端和用于输出信号的端子,其中每个驱动电路能够在接收到第一信号时在端子处提供输出信号,并联 总线包括在接收端处的多个输出信号线,可连接到目标分量,每个信号线至少从多个驱动器电路中的不同驱动电路的接收端延伸到终端,使得长度 接收端与各个驱动电路之间的输出信号线在多个驱动电路之间以连接顺序减小,以及以连接顺序耦合到驱动器电路的每个输入的信号线。
    • 6. 发明申请
    • Apparatus and method for writing to and/or reading from a memory cell in a semiconductor memory
    • 用于向半导体存储器中的存储单元进行写入和/或读取的装置和方法
    • US20060133172A1
    • 2006-06-22
    • US11283493
    • 2005-11-18
    • Florian SchnabelJens Polney
    • Florian SchnabelJens Polney
    • G11C7/04
    • G11C7/04G11C5/146G11C11/4074G11C11/409
    • The invention proposes an apparatus for writing to and/or reading from a memory cell in a semiconductor memory having a selection transistor and a storage capacitor, where the apparatus has a device which is used to influence a threshold voltage for the selection transistor contrary to the influence of an ambient temperature. The invention also proposes a method for writing to and/or reading from a memory cell in a semiconductor memory having a selection transistor and a storage capacitor, where the method comprises the following method steps: a) an ambient temperature for the memory cell is ascertained, and b) an electrical voltage is applied to a substrate well in the selection transistor as a function of the ascertained ambient temperature such that a threshold voltage for the selection transistor is influenced contrary to the influence of an ambient temperature.
    • 本发明提出了一种用于在具有选择晶体管和存储电容器的半导体存储器中从存储单元写入和/或读取的装置,其中该装置具有用于影响与该选择晶体管相反的选择晶体管的阈值电压的装置 环境温度的影响。 本发明还提出了一种用于在具有选择晶体管和存储电容器的半导体存储器中的存储单元的写入和/或读取方法,其中该方法包括以下方法步骤:a)确定存储单元的环境温度 并且b)作为所确定的环境温度的函数,在选择晶体管中的基板上施加电压,使得选择晶体管的阈值电压与环境温度的影响相反。
    • 9. 发明申请
    • Address decoding circuit and method for addressing a regular memory area and a redundant memory area in a memory circuit
    • 用于寻址存储器电路中的常规存储器区域和冗余存储器区域的地址解码电路和方法
    • US20050117416A1
    • 2005-06-02
    • US10920559
    • 2004-08-18
    • Florian SchnabelJens Polney
    • Florian SchnabelJens Polney
    • G11C8/00G11C8/10G11C29/00
    • G11C29/84
    • Address decoding circuit and method for addressing a regular memory area and a redundant memory area in a memory circuit are provided. One embodiment provides a method for addressing memory areas in a memory circuit with successive addresses, with either a regular memory area or a redundant memory area being addressed depending on the address, with an inactive state of a deactivation signal being set when addressing the regular memory area, which inactive state allows the addressing of the regular memory area, with the addressing of the regular memory area being blocked on the basis of an active state of the deactivation signal when addressing the redundant memory area, wherein a change is made from the active state of the deactivation signal to the inactive state of the deactivation signal before the application of the next address for addressing one of the memory areas.
    • 提供了用于寻址存储器电路中的常规存储区域和冗余存储器区域的地址解码电路和方法。 一个实施例提供了一种用于利用具有连续地址来寻址存储器电路中的存储器区域的方法,其中根据地址寻址常规存储器区域或冗余存储器区域,在寻址常规存储器时设置去激活信号的非活动状态 区域,其中所述非活动状态允许寻址常规存储器区域,其中当寻址冗余存储器区域时,基于去激活信号的活动状态来阻止常规存储器区域的寻址,其中,从激活 在施加用于寻址存储区域之一的下一个地址之前,去激活信号的状态到去激活信号的无效状态。