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1. 发明授权

US08194197B2 Integrated display and photovoltaic element 失效
标题翻译：集成显示和光电元件
公开(公告)号：US08194197B2
公开(公告)日：2012-06-05
申请号：US12759312
申请日：2010-04-13
申请人： Allan Evans , Stephen Day , Sunay Shah , Patrick Zebedee , Lesley Parry-Jones , Gareth Nicholas
发明人： Allan Evans , Stephen Day , Sunay Shah , Patrick Zebedee , Lesley Parry-Jones , Gareth Nicholas
IPC分类号： G02F1/135 , G02F1/136 , G02F1/1335
CPC分类号： G02F1/13306 , G02F1/136227 , G02F2001/13324
摘要： A display device includes a first layer having an optically active display portion, a second layer including a photovoltaic element, and a third layer including electronics operatively coupled to the first layer, wherein the electronics are configured to drive the optically active display portion. Further, the second layer is arranged between the first and third layers.
摘要翻译：显示装置包括具有光学显示部分的第一层，包括光电元件的第二层，以及包括可操作地耦合到第一层的电子器件的第三层，其中电子设备被配置为驱动光学活性显示部分。此外，第二层布置在第一层和第三层之间。

2. 发明申请

US20110249219A1 INTEGRATED DISPLAY AND PHOTOVOLTAIC ELEMENT 失效
标题翻译：集成显示和光电元件
公开(公告)号：US20110249219A1
公开(公告)日：2011-10-13
申请号：US12759312
申请日：2010-04-13
申请人： Allan EVANS , Stephen Day , Sunay Shah , Patrick Zebedee , Lesley Parry-Jones , Gareth Nicholas
发明人： Allan EVANS , Stephen Day , Sunay Shah , Patrick Zebedee , Lesley Parry-Jones , Gareth Nicholas
IPC分类号： G02F1/1335 , G02F1/1333 , H01J9/24
CPC分类号： G02F1/13306 , G02F1/136227 , G02F2001/13324
摘要： A display device includes a first layer having an optically active display portion, a second layer including a photovoltaic element, and a third layer including electronics operatively coupled to the first layer, wherein the electronics are configured to drive the optically active display portion. Further, the second layer is arranged between the first and third layers.
摘要翻译：显示装置包括具有光学显示部分的第一层，包括光电元件的第二层，以及包括可操作地耦合到第一层的电子器件的第三层，其中电子设备被配置为驱动光学活性显示部分。此外，第二层布置在第一层和第三层之间。

3. 发明申请

US20110012125A1 THIN FILM TRANSISTOR AND ACTIVE MATRIX DISPLAY 审中-公开
标题翻译：薄膜晶体管和有源矩阵显示
公开(公告)号：US20110012125A1
公开(公告)日：2011-01-20
申请号：US12933450
申请日：2009-04-20
申请人： Gareth Nicholas , Benjamin James Hadwen , Sunay Shah
发明人： Gareth Nicholas , Benjamin James Hadwen , Sunay Shah
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , G02F2201/58 , H01L29/78615
摘要： A thin film transistor is formed in a semiconductor island on an insulating substrate. The transistor comprises a source (1502) and a drain (1504) of first conductivity type and a channel (1508) of a second opposite conductivity type. The channel is overlapped by one or more insulated gates (1510) and is provided with isolation diodes. Each isolation diode comprises a first region (1506) which is lightly doped and a second region (1512) which is heavily doped and of the second conductivity type. The diodes are not overlapped by the gate (1510). The first and second regions (1506, 1512) extend away from the channel (1508) by less than the length of the adjacent source or drain. The lightly doped region (1506) extends away from the source or drain and the heavily doped region (1512) extends away from the lightly doped region such that the first and second regions (1506, 1512) form a p-n junction with the adjacent source or drain in a direction orthogonal to the main conduction path of the transistor but not parallel to the main conduction path.
摘要翻译：薄膜晶体管形成在绝缘基板上的半导体岛中。晶体管包括第一导电类型的源极（1502）和漏极（1504）和具有第二相反导电类型的沟道（1508）。通道由一个或多个绝缘栅极（1510）重叠，并且设置有隔离二极管。每个隔离二极管包括轻度掺杂的第一区域（1506）和重掺杂的第二导电类型的第二区域（1512）。二极管不与栅极重叠（1510）。第一和第二区域（1506,1512）远离通道（1508）延伸小于相邻源极或漏极的长度。轻掺杂区域（1506）远离源极或漏极延伸，并且重掺杂区域（1512）远离轻掺杂区域延伸，使得第一和第二区域（1506,1512）与相邻源形成pn结，或在与晶体管的主导通路正交的方向上漏极，但不平行于主导通路径。

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