专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060260538A1 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US20060260538A1
公开(公告)日：2006-11-23
申请号：US11494903
申请日：2006-07-28
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

2. 发明申请

US20070259112A1 GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION 有权
标题翻译：在外膜形成期间使用的气体歧管
公开(公告)号：US20070259112A1
公开(公告)日：2007-11-08
申请号：US11697516
申请日：2007-04-06
申请人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
发明人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
IPC分类号： C23C16/00 , C30B23/00 , C30B28/12
CPC分类号： C30B35/00 , C23C16/45561 , C30B25/14 , Y10T117/10
摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.
摘要翻译：本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。公开了许多其他方面。

3. 发明申请

US20080245767A1 Pre-cleaning of substrates in epitaxy chambers 有权
标题翻译：在外延室中预清洗底物
公开(公告)号：US20080245767A1
公开(公告)日：2008-10-09
申请号：US11480134
申请日：2006-06-30
申请人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
发明人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
IPC分类号： H01L21/306
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

4. 发明申请

US20060169669A1 Etchant treatment processes for substrate surfaces and chamber surfaces 有权
标题翻译：底物表面和室表面的蚀刻处理工艺
公开(公告)号：US20060169669A1
公开(公告)日：2006-08-03
申请号：US11242613
申请日：2005-10-03
申请人： Ali Zojaji , Arkadii Samoilov
发明人： Ali Zojaji , Arkadii Samoilov
IPC分类号： B44C1/22 , C03C25/68 , H01L21/311 , C03C15/00 , B08B6/00
CPC分类号： H01L21/02019 , B08B7/0035 , H01L21/02046 , H01L21/02057 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/3065 , H01L21/823425 , H01L21/823807 , H01L21/823814
摘要： In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about 100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. In another embodiment, a method for cleaning a process chamber is provided which includes exposing the interior surfaces with a chamber clean gas that contains an etchant and a silicon source. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.
摘要翻译：在本发明的一个实施方案中，提供了一种用于整理或处理含硅表面的方法，其包括通过缓蚀刻工艺（例如，约/ 100 / min）去除污染物和/或平滑表面上所含的表面。含硅表面暴露于含有蚀刻剂和硅源的蚀刻气体。优选地，蚀刻剂是氯气，使得在该过程中使用相对低的温度（例如<800℃）。在另一个实施例中，提供了一种用于在快速蚀刻工艺（例如约> 100 / min）期间蚀刻含硅表面的方法，其包括去除含硅材料以在源极/漏极（S / D）中形成凹陷）面积。在另一个实施例中，提供了一种用于清洁处理室的方法，其包括用包含蚀刻剂和硅源的室清洁气体暴露内表面。室清洁过程限制了处理室内的石英和金属表面的蚀刻。

5. 发明授权

US07651948B2 Pre-cleaning of substrates in epitaxy chambers 有权
标题翻译：在外延室中预清洗底物
公开(公告)号：US07651948B2
公开(公告)日：2010-01-26
申请号：US11480134
申请日：2006-06-30
申请人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
发明人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
IPC分类号： H01L21/302
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

6. 发明申请

US20060115933A1 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US20060115933A1
公开(公告)日：2006-06-01
申请号：US11227974
申请日：2005-09-14
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： H01L21/332 , H01L21/336
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
摘要翻译：在第一方面，提供了在基板上形成外延膜的第一种方法。第一种方法包括（a）提供基底; （b）将所述衬底暴露于至少硅源，以在所述衬底的至少一部分上形成外延膜; 和（c）将衬底暴露于HCl和Cl2，以蚀刻外延膜和在步骤（b）中形成的任何其它膜。提供了许多其他方面。

7. 发明申请

US20060234488A1 METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe 有权
标题翻译：选择性沉积重金属外延SiGe的方法
公开(公告)号：US20060234488A1
公开(公告)日：2006-10-19
申请号：US11420906
申请日：2006-05-30
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/44
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
摘要翻译：本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时保持在约0.1托至约200托的范围内的压力。沉积气体被提供到处理室，并且包括SiH 4 Si，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂剂气体。在基板上选择性地并外延生长硅膜或硅锗膜。一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。方法可以包括使用选择性硅锗外延膜的电子器件的制造。

8. 发明申请

US20070134821A1 CLUSTER TOOL FOR ADVANCED FRONT-END PROCESSING 审中-公开
标题翻译：用于高级前端处理的集群工具
公开(公告)号：US20070134821A1
公开(公告)日：2007-06-14
申请号：US11460864
申请日：2006-07-28
申请人： Randhir Thakur , Arkadii Samoilov , Per-Ove Hansson
发明人： Randhir Thakur , Arkadii Samoilov , Per-Ove Hansson
IPC分类号： B08B6/00 , H01L21/00 , C23C16/00
CPC分类号： C23C16/4584 , B08B6/00 , B08B7/0057 , C23C16/45546 , C23C16/45593 , C23C16/481 , C23C16/54 , H01L21/67017 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/67745 , H01L21/67757 , H01L21/67781
摘要： Aspects of the invention generally provide an apparatus and method for processing substrates using a multi-chamber processing system that is adapted to process substrates and analyze the results of the processes performed on the substrate. In one aspect of the invention, one or more analysis steps and/or precleaning steps are utilized to reduce the effect of queue time on device yield. In one aspect of the invention, a system controller and the one or more analysis chambers are utilized to monitor and control a process chamber recipe and/or a process sequence to reduce substrate scrap due to defects in the formed device and device performance variability issues. Embodiments of the present invention also generally provide methods and a system for repeatably and reliably forming semiconductor devices used in a variety of applications.
摘要翻译：本发明的方面通常提供一种使用多室处理系统来处理衬底的装置和方法，所述多室处理系统适于处理衬底并分析在衬底上执行的工艺的结果。在本发明的一个方面，利用一个或多个分析步骤和/或预清洗步骤来减少队列时间对设备产量的影响。在本发明的一个方面，系统控制器和一个或多个分析室用于监测和控制处理室配方和/或处理顺序，以减少由于所形成的器件和器件性能变异性问题中的缺陷引起的衬底废料。本发明的实施例还通常提供了用于可重复且可靠地形成用于各种应用的半导体器件的方法和系统。

9. 发明申请

US20060169668A1 Low temperature etchant for treatment of silicon-containing surfaces 有权
标题翻译：用于处理含硅表面的低温蚀刻剂
公开(公告)号：US20060169668A1
公开(公告)日：2006-08-03
申请号：US11047323
申请日：2005-01-31
申请人： Arkadii Samoilov
发明人： Arkadii Samoilov
IPC分类号： B44C1/22 , B08B6/00 , H01L21/311 , C23F1/00 , C25F1/00 , C25F5/00
CPC分类号： H01L21/02019 , B08B7/0035 , H01L21/02046 , H01L21/02057 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/3065 , H01L21/823425 , H01L21/823807 , H01L21/823814
摘要： In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about 100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. The silicon-containing surface is exposed to an etching gas that contains an etchant, preferably chlorine, a carrier gas and an optional silicon source.
摘要翻译：在本发明的一个实施方案中，提供了一种用于整理或处理含硅表面的方法，其包括通过缓蚀刻工艺（例如，约/ 100 / min）去除污染物和/或平滑表面上所含的表面。含硅表面暴露于含有蚀刻剂，硅源和载气的蚀刻气体。优选地，蚀刻剂是氯气，使得在蚀刻或平滑处理期间使用相对低的温度（例如<800℃）。在本发明的另一个实施例中，提供了一种用于在快速蚀刻工艺（例如，约> 100 / min）期间蚀刻含硅表面的方法，其包括去除含硅材料以在源极/漏极中形成凹陷 S / D）面积。含硅表面暴露于含有蚀刻剂，优选氯，载气和任选的硅源的蚀刻气体。

10. 发明申请

US20050079691A1 Methods of selective deposition of heavily doped epitaxial SiGe 有权
标题翻译：选择沉积重掺杂外延SiGe的方法
公开(公告)号：US20050079691A1
公开(公告)日：2005-04-14
申请号：US10683937
申请日：2003-10-10
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
摘要翻译：本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时保持在约0.1托至约200托的范围内的压力。沉积气体被提供到处理室，并且包括SiH 4，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂气体。在基板上选择性地并外延生长硅膜或硅锗膜。一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。方法可以包括使用选择性硅锗外延膜的电子器件的制造。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式