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1. 发明申请

US20070082451A1 METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PROCESS 有权
标题翻译：使用选择性沉积工艺制作MOSFET器件的方法
公开(公告)号：US20070082451A1
公开(公告)日：2007-04-12
申请号：US11539775
申请日：2006-10-09
申请人： ARKADII SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas Dalida
发明人： ARKADII SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas Dalida
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/28044 , H01L21/28114 , H01L21/823807 , H01L29/165 , H01L29/66242 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7834 , H01L29/7848
摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
摘要翻译：在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体，和氢气以在其上沉积第一含硅层。第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被蚀刻掉在衬底的电介质材料的表面上。随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

2. 发明申请

US20050079691A1 Methods of selective deposition of heavily doped epitaxial SiGe 有权
标题翻译：选择沉积重掺杂外延SiGe的方法
公开(公告)号：US20050079691A1
公开(公告)日：2005-04-14
申请号：US10683937
申请日：2003-10-10
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
摘要翻译：本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时保持在约0.1托至约200托的范围内的压力。沉积气体被提供到处理室，并且包括SiH 4，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂气体。在基板上选择性地并外延生长硅膜或硅锗膜。一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。方法可以包括使用选择性硅锗外延膜的电子器件的制造。

3. 发明申请

US20060260538A1 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US20060260538A1
公开(公告)日：2006-11-23
申请号：US11494903
申请日：2006-07-28
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

4. 发明申请

US20060234488A1 METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe 有权
标题翻译：选择性沉积重金属外延SiGe的方法
公开(公告)号：US20060234488A1
公开(公告)日：2006-10-19
申请号：US11420906
申请日：2006-05-30
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/44
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.
摘要翻译：本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时保持在约0.1托至约200托的范围内的压力。沉积气体被提供到处理室，并且包括SiH 4 Si，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂剂气体。在基板上选择性地并外延生长硅膜或硅锗膜。一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。方法可以包括使用选择性硅锗外延膜的电子器件的制造。

5. 发明申请

US20080044932A1 CARBON PRECURSORS FOR USE DURING SILICON EPITAXIAL FILM FORMATION 有权
标题翻译：用于硅胶膜形成过程中使用的碳前驱物
公开(公告)号：US20080044932A1
公开(公告)日：2008-02-21
申请号：US11690588
申请日：2007-03-23
申请人： ARKADII SAMOILOV , Rohini Kodali , Ali Zojaji , Yihwan Kim
发明人： ARKADII SAMOILOV , Rohini Kodali , Ali Zojaji , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/32134 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L29/66272 , H01L29/6656 , H01L29/66636 , H01L29/732 , H01L29/7834
摘要： The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.
摘要翻译：本发明提供了在衬底上形成外延膜的系统和方法。在处理室中加热之后，将衬底暴露于硅源和SiH2（CH3）2，SiH（CH3）3，Si（CH3）4,1,3-二硅烷和C2H2中的至少一种，温度大于约250摄氏度，压力大于约1托，以便在至少一部分基底上形成外延膜。然后，将衬底暴露于蚀刻剂，以蚀刻外延膜和沉积期间形成的任何其它膜。可以重复沉积和蚀刻，直到达到所需厚度的膜。公开了许多其他方面。

6. 发明申请

US20070259112A1 GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION 有权
标题翻译：在外膜形成期间使用的气体歧管
公开(公告)号：US20070259112A1
公开(公告)日：2007-11-08
申请号：US11697516
申请日：2007-04-06
申请人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
发明人： David Ishikawa , Craig Metzner , Ali Zojaji , Yihwan Kim , Arkadii Samoilov
IPC分类号： C23C16/00 , C30B23/00 , C30B28/12
CPC分类号： C30B35/00 , C23C16/45561 , C30B25/14 , Y10T117/10
摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.
摘要翻译：本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。公开了许多其他方面。

7. 发明申请

US20080245767A1 Pre-cleaning of substrates in epitaxy chambers 有权
标题翻译：在外延室中预清洗底物
公开(公告)号：US20080245767A1
公开(公告)日：2008-10-09
申请号：US11480134
申请日：2006-06-30
申请人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
发明人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
IPC分类号： H01L21/306
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

8. 发明申请

US20060216876A1 SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY 有权
标题翻译：具有替代气体供应的选择性外延工艺
公开(公告)号：US20060216876A1
公开(公告)日：2006-09-28
申请号：US11421156
申请日：2006-05-31
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/84 , H01L21/8238 , H01L21/336 , H01L21/20 , H01L21/31
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10S438/933 , Y10S438/969
摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.
摘要翻译：在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

9. 发明申请

US20060115934A1 Selective epitaxy process with alternating gas supply 有权
公开(公告)号：US20060115934A1
公开(公告)日：2006-06-01
申请号：US11001774
申请日：2004-12-01
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/84 , H01L21/336
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10S438/933 , Y10S438/969
摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

10. 发明授权

US07651948B2 Pre-cleaning of substrates in epitaxy chambers 有权
标题翻译：在外延室中预清洗底物
公开(公告)号：US07651948B2
公开(公告)日：2010-01-26
申请号：US11480134
申请日：2006-06-30
申请人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
发明人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
IPC分类号： H01L21/302
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

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