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1. 发明授权

US06764774B2 Structures with improved adhesion to Si and C containing dielectrics and method for preparing the same 有权
标题翻译：具有对含Si和C的电介质的粘附性提高的结构及其制备方法
公开(公告)号：US06764774B2
公开(公告)日：2004-07-20
申请号：US10174748
申请日：2002-06-19
申请人： Alfred Grill , Michael Lane , Vishnubhai V. Patel
发明人： Alfred Grill , Michael Lane , Vishnubhai V. Patel
IPC分类号： H01L2912
CPC分类号： H01L23/53295 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , Y10T428/12528 , Y10T428/12674 , Y10T428/24926 , H01L2924/00
摘要： A semiconductor device structure and method for manufacture includes a substrate having a top first layer of dielectric material; a second layer of material selected from the group including: amorphous Silicon (a-Si), amorphous Ge (a-Ge) or alloys thereof, located on top of the first layer; and, a third layer located on top of the a-Si, a-Ge, or alloys thereof layer, wherein the second layer provides adhesion between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective a-Si, a-Ge, or alloys thereof bonding layers disposed to enhance adhesion between the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the adhesion between different dielectric is enhanced by an intermediate a-Si, a-Ge, or alloys thereof bonding layer. The thin a-Si, a-Ge, or alloys thereof layer may be hydrogenated or non-hydrogenated, or even partially oxidized.
摘要翻译：半导体器件结构和制造方法包括：具有顶部第一介电材料层的衬底; 选自包括位于第一层顶部的非晶硅（a-Si），无定形Ge（a-Ge）或其合金的第二层材料; 以及位于a-Si，a-Ge或其合金层的顶部上的第三层，其中第二层提供结构的第一和第三层之间的粘附。此外，半导体器件结构和制造方法包括绝缘结构，其包括多个电介质层和导电层，其各自的a-Si，a-Ge或其合金被设置以增强不同层之间的粘附。此外，电子器件结构在后端（“BEOL”）布线结构中包括绝缘和导电材料层作为嵌入式或层间电介质，其中不同电介质之间的粘附通过中间a- Si，a-Ge或其合金结合层。薄的a-Si，a-Ge或其合金层可以被氢化或非氢化，或甚至部分氧化。

2. 发明申请

US20060165891A1 SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same 失效
标题翻译： SiCOH介电材料具有改善的韧性和改善的Si-C键合，含有其的半导体器件及其制造方法
公开(公告)号：US20060165891A1
公开(公告)日：2006-07-27
申请号：US11132108
申请日：2005-05-18
申请人： Daniel Edelstein , Stephen Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert Miller , Deborah Neumayer , Son Nguyen
发明人： Daniel Edelstein , Stephen Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert Miller , Deborah Neumayer , Son Nguyen
IPC分类号： C23C16/00 , B05D3/00
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C≡CH2, C≡C or a [S]n linkage, where n is a defined above.
摘要翻译：提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k介电材料，其包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH _{3个官能团，另外一部分C原子键合为Si-R-Si，其中R是苯基， - [CH 2 N] - 其中n大于或等于1，HC-CH，C≡CH2，C≡C或[S] n N连接，其中n是定义的以上。}

3. 发明授权

US08101236B2 Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding 有权
标题翻译：制造具有改进的韧性和改善的Si-C键合的SiCOH介电材料的方法
公开(公告)号：US08101236B2
公开(公告)日：2012-01-24
申请号：US12355316
申请日：2009-01-16
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： C23C16/40
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A method of fabricating a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided. The method includes the deposition of the dielectric material from a first precursor which is an carbosilane or an alkoxycarbosilane molecule.
摘要翻译：提供了一种制造具有增强的内聚强度的低k电介质材料的方法，用于包括互连和感测结构在内的电子结构中。该方法包括从作为碳硅烷或烷氧基碳硅烷分子的第一前体沉积电介质材料。

4. 发明申请

US20090181178A1 SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME 有权
标题翻译：具有改进的韧性和改进的Si-C键合的SiCOH电介质材料，含有它们的半导体器件及其制造方法
公开(公告)号：US20090181178A1
公开(公告)日：2009-07-16
申请号：US12355316
申请日：2009-01-16
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： C23C16/22
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.
摘要翻译：提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，CC或[ S] n连接，其中n是上面定义的。

5. 发明申请

US20050194619A1 SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same 有权
标题翻译： SiCOH介电材料具有改善的韧性和改善的Si-C键合，含有其的半导体器件及其制造方法
公开(公告)号：US20050194619A1
公开(公告)日：2005-09-08
申请号：US11040778
申请日：2005-01-21
申请人： Daniel Edelstein , Stephen Gates , Alfred Grill , Michael Lane , Robert Miller , Deborah Neumayer , Son Nguyen
发明人： Daniel Edelstein , Stephen Gates , Alfred Grill , Michael Lane , Robert Miller , Deborah Neumayer , Son Nguyen
IPC分类号： H01L27/148 , H01L31/103
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.
摘要翻译：提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k介电材料，其包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH _{3个官能团，另外一部分C原子键合为Si-R-Si，其中R是苯基， - [CH 2 N] - 其中n大于或等于1，HC-CH，C-CH 2，CC或[S] N n连接，其中n定义如上。}

6. 发明申请

US20110101489A1 SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME 审中-公开
标题翻译：具有改进的韧性和改进的Si-C键合的SiCOH电介质材料，含有它们的半导体器件及其制造方法
公开(公告)号：US20110101489A1
公开(公告)日：2011-05-05
申请号：US12986531
申请日：2011-01-07
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： H01L23/522
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.
摘要翻译：提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子，并且C原子的另一部分键合为Si-R-Si，其中R是苯基， - [CH 2] n - ，其中n大于或等于1，HC = CH，C = CH 2，C≡C或一个[S] n连接，其中n是上面定义的。

7. 发明申请

US20080044668A1 ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS 有权
标题翻译：超导介质恒定层与受控双向应力
公开(公告)号：US20080044668A1
公开(公告)日：2008-02-21
申请号：US11034479
申请日：2005-01-13
申请人： Christos Dimitrakopoulos , Stephen Gates , Alfred Grill , Michael Lane , Eric Liniger , Xiao Liu , Son Nguyen , Deborah Neumayer , Thomas Shaw
发明人： Christos Dimitrakopoulos , Stephen Gates , Alfred Grill , Michael Lane , Eric Liniger , Xiao Liu , Son Nguyen , Deborah Neumayer , Thomas Shaw
IPC分类号： B32B9/04 , B32B13/04
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02348 , H01L21/3105 , H01L21/31058 , H01L21/31633 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76832 , Y10T428/249953 , Y10T428/249969 , Y10T428/249979
摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.
摘要翻译：描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜的氧和水各自小于10ppm。还通过使用介电常数不大于2.8的方法描述材料。本发明克服了低双轴应力低于46MPa的薄膜形成问题。

8. 发明授权

US07892648B2 SiCOH dielectric material with improved toughness and improved Si-C bonding 有权
标题翻译： SiCOH介电材料具有改善的韧性和改善的Si-C键合
公开(公告)号：US07892648B2
公开(公告)日：2011-02-22
申请号：US11040778
申请日：2005-01-21
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： B32B9/04
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.
摘要翻译：提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子，并且C原子的另一部分键合为Si-R-Si，其中R是苯基， - [CH 2] n - ，其中n大于或等于1，HC = CH，C = CH 2，C≡C或一个[S] n连接，其中n是上面定义的。

9. 发明授权

US07479306B2 SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same 失效
标题翻译： SiCOH介电材料具有改善的韧性和改善的Si-C键合，含有其的半导体器件及其制造方法
公开(公告)号：US07479306B2
公开(公告)日：2009-01-20
申请号：US11132108
申请日：2005-05-18
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： C23C16/22
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.
摘要翻译：提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，C≡C或一个[S] n连接，其中n是上面定义的。

10. 发明申请

US20080066468A1 Splash plate dome assembly for a turbine engine 有权
标题翻译：用于涡轮发动机的飞溅板式圆顶组件
公开(公告)号：US20080066468A1
公开(公告)日：2008-03-20
申请号：US11898679
申请日：2007-09-14
申请人： Les Faulder , Mario Abreu , Ram Srinivasan , Michael Lane
发明人： Les Faulder , Mario Abreu , Ram Srinivasan , Michael Lane
IPC分类号： F02C1/00
CPC分类号： F23R3/002 , F23R3/10 , F23R3/283 , F23R2900/03044
摘要： A splash plate dome assembly for a combustion liner of a turbine engine is disclosed. The splash plate may include an outer periphery having a plurality of corners and an inner periphery defining an aperture and an annular flange. The splash plate may include a plurality of first flow guides extending from the outer periphery to the inner periphery. The splash plate may further include a plurality of second flow guides extending from the outer periphery to a location intermediate the inner periphery and the outer periphery. The splash plate, annular flange, first flow guides, and second flow guides may be integrally formed by casting. The splash plate may be mounted to a combustion dome having a plurality of distributed through holes for forming impingement jets on an upstream face of the splash plate.
摘要翻译：公开了一种用于涡轮发动机的燃烧衬套的飞溅板圆顶组件。溅溅板可以包括具有多个拐角的外周边和限定孔的内周边和环形凸缘。溅溅板可以包括从外周延伸到内周的多个第一流动引导件。溅溅板还可以包括多个第二流动引导件，该第二流动引导件从外周边延伸到内周边和外周边之间的位置。溅溅板，环形凸缘，第一流动引导件和第二流动引导件可以通过铸造一体地形成。飞溅板可以安装到具有多个分布通孔的燃烧穹顶上，用于在飞溅板的上游面上形成冲击射流。

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