专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09499436B2 Light scattering coating for greenhouse applications, and/or coated article including the same 有权
标题翻译：用于温室应用的光散射涂层和/或包括其的涂层制品
公开(公告)号：US09499436B2
公开(公告)日：2016-11-22
申请号：US13064600
申请日：2011-04-01
申请人： Alexey Krasnov , Willem Den Boer , Scott V. Thomsen , Jean-Marc Lemmer
发明人： Alexey Krasnov , Willem Den Boer , Scott V. Thomsen , Jean-Marc Lemmer
IPC分类号： C03C17/34 , C03C15/00 , G02B1/10 , G02B5/02 , A01G9/14 , F24J2/40 , F24J2/50
CPC分类号： G02B1/10 , A01G9/14 , A01G9/1438 , C03C15/00 , C03C17/23 , C03C17/3417 , C03C2218/32 , F24S50/80 , F24S80/52 , G02B1/115 , G02B5/021 , G02B5/0268 , G02B5/0278 , Y02A40/252 , Y10T428/24355
摘要： Certain example embodiments relate to a sunlight-scattering thin-film coating disposed on a substrate for greenhouse applications. The surface morphology of the coating promotes a better and more uniform light distribution. For instance, at least one thin-film layer disposed on a substrate may be textured so as to create surface features on the order of 0.1-5 microns, with the surface features being sized to cause (a) light having a wavelength of greater than or equal to about 800 nm incident thereon to primarily scatter to angles less than 30 degrees relative to a major surface of the substrate and (b) light having a wavelength of less than or equal to about 700 nm incident thereon to primarily scatter to angles greater than 20 degrees relative to the major surface of the substrate. This arrangement may advantageously direct beneficial light towards plant life while directing parasitic light away from the plant life.
摘要翻译：某些示例实施例涉及设置在用于温室应用的基板上的日光散射薄膜涂层。涂层的表面形态促进了更好和更均匀的光分布。例如，设置在基板上的至少一个薄膜层可以被纹理化，以便产生大约0.1-5微米的表面特征，其中表面特征的尺寸使得（a）波长大于或等于大约800nm入射到其上以主要散射到相对于衬底的主表面小于30度的角度，以及（b）入射到其上的波长小于或等于约700nm的光主要散射到更大的角度相对于基材的主表面超过20度。这种布置可以有利地将有利的光引向植物生命，同时将寄生光引导远离植物的寿命。

2. 发明申请

US20120251773A1 Light scattering coating for greenhouse applications, and/or coated article including the same 有权
标题翻译：用于温室应用的光散射涂层和/或包括其的涂层制品
公开(公告)号：US20120251773A1
公开(公告)日：2012-10-04
申请号：US13064600
申请日：2011-04-01
申请人： Alexey Krasnov , Willem Den Boer , Scott V. Thomsen , Jean-Marc Lemmer
发明人： Alexey Krasnov , Willem Den Boer , Scott V. Thomsen , Jean-Marc Lemmer
IPC分类号： B32B3/30 , B05D3/00 , C23C14/34 , B05D3/12 , B05D5/06 , B05D3/10
CPC分类号： G02B1/10 , A01G9/14 , A01G9/1438 , C03C15/00 , C03C17/23 , C03C17/3417 , C03C2218/32 , F24S50/80 , F24S80/52 , G02B1/115 , G02B5/021 , G02B5/0268 , G02B5/0278 , Y02A40/252 , Y10T428/24355
摘要： Certain example embodiments relate to a sunlight-scattering thin-film coating disposed on a substrate for greenhouse applications. The surface morphology of the coating promotes a better and more uniform light distribution. For instance, at least one thin-film layer disposed on a substrate may be textured so as to create surface features on the order of 0.1-5 microns, with the surface features being sized to cause (a) light having a wavelength of greater than or equal to about 800 nm incident thereon to primarily scatter to angles less than 30 degrees relative to a major surface of the substrate and (b) light having a wavelength of less than or equal to about 700 nm incident thereon to primarily scatter to angles greater than 20 degrees relative to the major surface of the substrate. This arrangement may advantageously direct beneficial light towards plant life while directing parasitic light away from the plant life.
摘要翻译：某些示例实施例涉及设置在用于温室应用的基板上的日光散射薄膜涂层。涂层的表面形态促进了更好和更均匀的光分布。例如，设置在基板上的至少一个薄膜层可以被纹理化，以便产生大约0.1-5微米的表面特征，其中表面特征的尺寸使得（a）波长大于或等于大约800nm入射到其上以主要散射到相对于衬底的主表面小于30度的角度，以及（b）入射到其上的具有小于或等于约700nm的波长的光，以主要散射到更大的角度相对于基材的主表面超过20度。这种布置可以有利地将有利的光引向植物生命，同时将寄生光引导远离植物的寿命。

3. 发明申请

US20110097841A1 Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same 有权
公开(公告)号：US20110097841A1
公开(公告)日：2011-04-28
申请号：US12926943
申请日：2010-12-20
申请人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, JR.
发明人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, JR.
IPC分类号： H01L31/18 , H01L21/44
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

4. 发明授权

US08415194B2 Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same 有权
公开(公告)号：US08415194B2
公开(公告)日：2013-04-09
申请号：US12926943
申请日：2010-12-20
申请人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, Jr.
发明人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, Jr.
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

5. 发明授权

US07875945B2 Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same 有权
标题翻译：用于光电器件如CIGS / CIS光伏器件的后电极结构及其制造方法
公开(公告)号：US07875945B2
公开(公告)日：2011-01-25
申请号：US12149919
申请日：2008-05-09
申请人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, Jr.
发明人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, Jr.
IPC分类号： H01L31/0232
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.
摘要翻译：一种光电器件，包括也可用作后反射器的后电极。在本发明的某些示例性实施例中，后电极包括氧化分级的金属基反射膜，以便比支撑电极的后基板（例如，玻璃基板）更靠近后方的位置基质。换句话说，在某些示例性实施例中，后电极被氧化分级，以便比在远离半导体吸收器的位置更靠近光伏器件的半导体吸收器。在某些示例性实施例中，后部衬底的内表面可以可选地被纹理化，使得沉积在其上的后电极也是纹理化的，以便提供期望的电和反射特性。在某些示例性实施例中，后电极可以是Mo和/或MoO x，或者可以使用MoOx和Mo溅射靶的组合来溅射沉积。

6. 发明申请

US20090020157A1 Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same 有权
标题翻译：用于光电器件如CIGS / CIS光伏器件的后电极结构及其制造方法
公开(公告)号：US20090020157A1
公开(公告)日：2009-01-22
申请号：US12149919
申请日：2008-05-09
申请人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, JR.
发明人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, JR.
IPC分类号： H01L31/00 , C23C14/00
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.
摘要翻译：一种光电器件，包括也可用作后反射器的后电极。在本发明的某些示例性实施例中，后电极包括氧化分级的金属基反射膜，以便比支撑电极的后基板（例如，玻璃基板）更靠近后方的位置基质。换句话说，在某些示例性实施例中，后电极被氧化分级，以便比在远离半导体吸收器的位置更靠近光伏器件的半导体吸收器。在某些示例性实施例中，后部衬底的内表面可以可选地被纹理化，使得沉积在其上的后电极也是纹理化的，以便提供期望的电和反射特性。在某些示例性实施例中，后电极可以是Mo和/或MoO x，或者可以使用MoOx和Mo溅射靶的组合来溅射沉积。

7. 发明授权

US08203073B2 Front electrode for use in photovoltaic device and method of making same 有权
标题翻译：用于光伏器件的前电极及其制造方法
公开(公告)号：US08203073B2
公开(公告)日：2012-06-19
申请号：US12068117
申请日：2008-02-01
申请人： Yiwei Lu , Willem den Boer , David Lerin , Scott V. Thomsen
发明人： Yiwei Lu , Willem den Boer , David Lerin , Scott V. Thomsen
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , B32B17/10036 , B32B17/10229 , H01L31/02168 , H01L31/022466 , H01L31/022483 , Y02E10/50
摘要： This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. At least one of the surfaces of the front glass substrate may be textured in certain example embodiments of this invention.
摘要翻译：本发明涉及用于诸如光伏器件的电子设备中的前电极/触点。在某些示例性实施例中，光伏器件等的前电极包括多层涂层，其包括至少一个透明导电氧化物（TCO）层（例如，由氧化锡，ITO，氧化锌或类似）和/或至少一个导电的基本上金属的IR反射层（例如，基于银，金等）。在某些示例中，多层前电极涂层可以包括一个或多个导电金属氧化物层和一个或多个导电的基本上金属的IR反射层，以便提供减少的可见光反射，增加的电导率，更便宜的可制造性和/或增加的红外（IR）反射能力。在本发明的某些示例性实施例中，前玻璃基板的至少一个表面可以纹理化。

8. 发明授权

US5994157A Method of making a large area imager with UV Blocking layer, and corresponding imager 失效
标题翻译：制作大面积成像仪的UV阻挡层的方法，以及相应的成像仪
公开(公告)号：US5994157A
公开(公告)日：1999-11-30
申请号：US10639
申请日：1998-01-22
申请人： Steven Aggas , Willem den Boer , Yiwei Lu , Scott V. Thomsen
发明人： Steven Aggas , Willem den Boer , Yiwei Lu , Scott V. Thomsen
IPC分类号： H01L27/146 , H01L21/00
CPC分类号： H01L27/14603 , H01L27/14658
摘要： This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.
摘要翻译：本发明涉及包括薄膜晶体管（TFT）阵列的辐射成像仪（例如X射线成像仪）及其制造方法。在电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的可光致成像绝缘材料，以便提高成像器的信噪比。在某些实施例中，可光致成像的绝缘层用作负光刻胶，因此通过用保留在衬底上的UV光曝光绝缘层的部分，形成通孔，去除绝缘层的未曝光区域，以便以在绝缘层中形成通孔或孔。为了防止不均匀性被无意地成像到可光致成像绝缘层中，提供了紫外线（UV）阻挡/吸收层。 UV阻挡层可以形成在与TFT相对的衬底的相对侧上，或者可以形成为栅极绝缘层的一部分。

9. 发明授权

US6020590A Large area imager with UV blocking layer 失效
标题翻译：大面积成像器具有UV阻挡层
公开(公告)号：US6020590A
公开(公告)日：2000-02-01
申请号：US10847
申请日：1998-01-22
申请人： Steven Aggas , Willem den Boer , Yiwei Lu , Scott V. Thomsen
发明人： Steven Aggas , Willem den Boer , Yiwei Lu , Scott V. Thomsen
IPC分类号： H01L27/146 , G02F1/13 , G01T1/24
CPC分类号： H01L27/14663 , H01L27/14676
摘要： This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.
摘要翻译：本发明涉及包括薄膜晶体管（TFT）阵列的辐射成像仪（例如X射线成像仪）及其制造方法。在电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的可光致成像绝缘材料，以便提高成像器的信噪比。在某些实施例中，可光致成像的绝缘层用作负光刻胶，因此通过用保留在衬底上的UV光曝光绝缘层的部分，形成通孔，去除绝缘层的未曝光区域，以便以在绝缘层中形成通孔或孔。为了防止不均匀性被无意地成像到可光致成像绝缘层中，提供了紫外线（UV）阻挡/吸收层。 UV阻挡层可以形成在与TFT相对的衬底的相对侧上，或者可以形成为栅极绝缘层的一部分。

10. 发明授权

US08354586B2 Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same 有权
标题翻译：具有锡酸镉的透明导体膜叠层，相应的光伏器件及其制造方法
公开(公告)号：US08354586B2
公开(公告)日：2013-01-15
申请号：US12923672
申请日：2010-10-01
申请人： Scott V. Thomsen , Willem den Boer , Yiwei Lu
发明人： Scott V. Thomsen , Willem den Boer , Yiwei Lu
IPC分类号： H01L31/0224
CPC分类号： H01L31/0392 , H01L31/022466 , H01L31/03925 , H01L31/073 , Y02E10/543 , Y02P70/521
摘要： Certain example embodiments relate to a transparent conductor film stack with cadmium stannate used as a front contact layer and/or a buffer layer in a photovoltaic device or the like. The cadmium stannate-based layers may be provided between the front glass substrate and the semiconductor absorber film in a photovoltaic device (e.g., a CdS and/or CdTe based photovoltaic device). In certain example embodiments, the buffer layer based on cadmium stannate may have a higher resistivity than the transparent conductive oxide layer based on cadmium stannate. In certain example embodiments, one or more index matching layer(s) may be provided between the glass substrate and the layer(s) comprising cadmium stannate, e.g., to help overcome the optical mismatch between the glass substrate and the CdSnOx.
摘要翻译：某些示例实施例涉及在光伏器件等中用作前接触层和/或缓冲层的锡酸镉的透明导体膜堆叠。可以在光电器件（例如，CdS和/或CdTe基光电器件）中的前玻璃基板和半导体吸收膜之间设置锡酸镉基层。在某些示例性实施例中，基于锡酸镉的缓冲层可以具有比基于锡酸镉的透明导电氧化物层更高的电阻率。在某些示例性实施例中，可以在玻璃基板和包含锡酸镉的层之间提供一个或多个折射率匹配层，例如以帮助克服玻璃基板和CdSnOx之间的光学失配。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式