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1. 发明授权

US07049606B2 Electron beam treatment apparatus 有权
标题翻译：电子束处理装置
公开(公告)号：US07049606B2
公开(公告)日：2006-05-23
申请号：US10698726
申请日：2003-10-30
申请人： Alexandros T. Demos , Hari K. Ponnekanti , Jun Zhao , Helen R. Armer
发明人： Alexandros T. Demos , Hari K. Ponnekanti , Jun Zhao , Helen R. Armer
IPC分类号： H01J37/30
CPC分类号： H01J37/317 , H01J3/025 , H01J37/077
摘要： One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.
摘要翻译：本发明的一个实施例是一种电子束处理装置，包括：（a）室; （b）具有暴露于所述室内部的相对较大面积表面的阴极; （c）其中具有孔的阳极，其设置在室内并与阴极间隔开工作距离; （d）设置在面向阳极的腔室内的晶片保持器; （e）将负电压全输出源施加到阴极以提供阴极电压; （f）其输出端施加到阳极的电压源; （g）气体入口，其适于以引入速率将气体引入所述腔室; 以及（h）适于以排气速度从所述室排出气体的泵，所述引入速率和排气速率在所述室中提供气体压力; 其中阴极电压，气体压力和工作距离的值使得阴极和阳极之间没有电弧，并且工作距离大于电子平均自由程。

2. 发明授权

US06831284B2 Large area source for uniform electron beam generation 失效
公开(公告)号：US06831284B2
公开(公告)日：2004-12-14
申请号：US10301508
申请日：2002-11-21
申请人： Alexandros T. Demos , Hari K. Ponnekanti , Jun Zhao , Helen R. Armer , William R. Livesay , Scott C. Woods
发明人： Alexandros T. Demos , Hari K. Ponnekanti , Jun Zhao , Helen R. Armer , William R. Livesay , Scott C. Woods
IPC分类号： G21K502
CPC分类号： H01J37/06 , H01J37/317 , H01J2237/316
摘要： An electron beam apparatus that includes a vacuum chamber, a large-area cathode disposed in the vacuum chamber, and a first power supply connected to the cathode. The first power supply is configured to apply a negative voltage to the cathode sufficient to cause the cathode to emit electrons toward a substrate disposed in the vacuum chamber. The electron beam apparatus further includes an anode positioned between the large-area cathode and the substrate. The anode is made from aluminum. The electron beam apparatus further includes a second power supply connected to the anode, wherein the second power supply is configured to apply a voltage to the anode that is positive relative to the voltage applied to the cathode.

3. 发明授权

US07018941B2 Post treatment of low k dielectric films 有权
标题翻译：后处理低k电介质膜
公开(公告)号：US07018941B2
公开(公告)日：2006-03-28
申请号：US10830203
申请日：2004-04-21
申请人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
发明人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/461
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351
摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
摘要翻译：提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

4. 发明授权

US07256139B2 Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices 有权
标题翻译：用于制造集成电路器件的电子束处理方法和装置
公开(公告)号：US07256139B2
公开(公告)日：2007-08-14
申请号：US11045650
申请日：2005-01-28
申请人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick J. Roberts , Li-Quan Xia , Alexandros T. Demos
发明人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick J. Roberts , Li-Quan Xia , Alexandros T. Demos
IPC分类号： H01L21/31
CPC分类号： B05D1/60 , B05D3/068 , B05D3/141 , B05D5/08 , B05D5/12 , C08G77/50 , C23C16/26 , C23C16/401 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02129 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02351 , H01L21/0276 , H01L21/0277 , H01L21/0337 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/3146 , H01L21/3148 , H01L21/316 , H01L21/31625 , H01L21/31633 , H01L21/76807 , H01L21/76814 , H01L21/76825 , H01L21/76829
摘要： One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
摘要翻译：本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

5. 发明授权

US06936551B2 Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices 失效
标题翻译：用于电子束处理的方法和设备用于制造集成电路器件
公开(公告)号：US06936551B2
公开(公告)日：2005-08-30
申请号：US10428374
申请日：2003-05-01
申请人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick J. Roberts , Li-Qun Xia , Alexandros T. Demos
发明人： Farhad Moghadam , Jun Zhao , Timothy Weidman , Rick J. Roberts , Li-Qun Xia , Alexandros T. Demos
IPC分类号： B05D3/06 , B05D7/24 , C23C16/26 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/31 , H01L21/469
CPC分类号： B05D1/60 , B05D3/068 , B05D3/141 , B05D5/08 , B05D5/12 , C08G77/50 , C23C16/26 , C23C16/401 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02129 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02351 , H01L21/0276 , H01L21/0277 , H01L21/0337 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/3146 , H01L21/3148 , H01L21/316 , H01L21/31625 , H01L21/31633 , H01L21/76807 , H01L21/76814 , H01L21/76825 , H01L21/76829
摘要： One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
摘要翻译：本发明的一个实施例是一种制造低k电介质膜的方法，包括以下步骤：（a）化学气相沉积低k电介质膜; 和（b）电子束处理低k电介质膜。

6. 发明授权

US06878644B2 Multistep cure technique for spin-on-glass films 失效
标题翻译：旋涂玻璃膜的多步法固化技术
公开(公告)号：US06878644B2
公开(公告)日：2005-04-12
申请号：US10430942
申请日：2003-05-06
申请人： Zhenjiang Cui , Rick J. Roberts , Michael S. Cox , Jun Zhao , Khaled Elsheref , Alexandros T. Demos
发明人： Zhenjiang Cui , Rick J. Roberts , Michael S. Cox , Jun Zhao , Khaled Elsheref , Alexandros T. Demos
IPC分类号： H01L21/3105 , H01L21/762 , H01L21/31 , H01L21/461 , H01L21/76
CPC分类号： H01L21/76229 , H01L21/3105
摘要： A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
摘要翻译：一种填充蚀刻在衬底中的多个沟槽的方法。在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 通过在第一温度下将自旋玻璃材料暴露于电子束辐射第一周期，随后将旋涂玻璃材料暴露于第二温度下的电子束第二周期来固化旋涂玻璃材料层，其中第二温度大于第一温度。该方法的结论是通过使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。

7. 发明申请

US20110100394A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 有权
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：US20110100394A1
公开(公告)日：2011-05-05
申请号：US12987948
申请日：2011-01-10
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B7/00
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于紫外线不到一分钟。可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

8. 发明授权

US07790583B2 Clean process for an electron beam source 有权
标题翻译：电子束源的清洁过程
公开(公告)号：US07790583B2
公开(公告)日：2010-09-07
申请号：US11925611
申请日：2007-10-26
申请人： Alexandros T. Demos , Khaled A. Elsheref , Josphine J. Chang , Hichem M'saad
发明人： Alexandros T. Demos , Khaled A. Elsheref , Josphine J. Chang , Hichem M'saad
IPC分类号： H01L21/20
CPC分类号： B08B7/0035 , B82Y10/00 , B82Y40/00 , C23C16/4405 , C23C16/56 , H01J37/3174 , Y10S438/905
摘要： One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.
摘要翻译：本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

9. 发明申请

US20100018548A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 审中-公开
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：US20100018548A1
公开(公告)日：2010-01-28
申请号：US12178523
申请日：2008-07-23
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B7/00
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，并将该室暴露于紫外线不到一分钟。可以重复基底批处理子步骤，直到处理批次中的最后一个基底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

10. 发明申请

US20090017231A1 NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权
标题翻译：通过等离子体增强化学蒸气沉积法制造具有高机械性能的超低K膜的新型硅前驱体
公开(公告)号：US20090017231A1
公开(公告)日：2009-01-15
申请号：US12183915
申请日：2008-07-31
申请人： Kang Sub Yim , Alexandros T. Demos
发明人： Kang Sub Yim , Alexandros T. Demos
IPC分类号： H05H1/24
CPC分类号： C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
摘要翻译：提供了一种在基片上沉积低介电常数膜的方法。低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

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