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    • 10. 发明申请
    • METHOD AND SYSTEM FOR DISTRIBUTING GAS FOR A BEVEL EDGE ETCHER
    • 一种用于分布水边蚀刻器的气体的方法和系统
    • US20080216864A1
    • 2008-09-11
    • US11697695
    • 2007-04-06
    • Greg SextonAndrew BaileyAlan Schoepp
    • Greg SextonAndrew BaileyAlan Schoepp
    • B08B6/00C25F3/30
    • H01L21/02087B08B7/0035H01J37/32009H01J37/3244H01J37/32706Y10S134/902
    • A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.
    • 提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。 该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。 顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。 该室包括通过处理室的顶表面限定的气体进料。 气体进料引入处理气体,用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。 泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。 还提供了一种用于清洁基板的斜边缘的方法。