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1. 发明授权

US07682980B2 Method to improve profile control and N/P loading in dual doped gate applications 有权
标题翻译：在双掺杂栅极应用中改进轮廓控制和N / P加载的方法
公开(公告)号：US07682980B2
公开(公告)日：2010-03-23
申请号：US11627016
申请日：2007-01-25
申请人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
发明人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
IPC分类号： H01L21/302
CPC分类号： H01L21/32137
摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
摘要翻译：提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。该方法开始于限定保护待蚀刻的多晶硅膜的图案。然后，产生等离子体。接下来，蚀刻大部分未被保护的多晶硅膜。然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

2. 发明授权

US07186661B2 Method to improve profile control and N/P loading in dual doped gate applications 失效
标题翻译：在双掺杂栅极应用中改进轮廓控制和N / P加载的方法
公开(公告)号：US07186661B2
公开(公告)日：2007-03-06
申请号：US10607612
申请日：2003-06-27
申请人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
发明人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/28035 , H01L21/28044 , H01L21/32137 , H01L21/823842 , H01L29/7833
摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
摘要翻译：提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。该方法开始于限定保护待蚀刻的多晶硅膜的图案。然后，产生等离子体。接下来，蚀刻大部分未被保护的多晶硅膜。然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

3. 发明授权

US06218309B1 Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features 有权
标题翻译：在蚀刻浅沟槽隔离特征的同时实现顶部圆整和均匀蚀刻深度的方法
公开(公告)号：US06218309B1
公开(公告)日：2001-04-17
申请号：US09410365
申请日：1999-09-30
申请人： Alan J. Miller , Vahid Vahedi
发明人： Alan J. Miller , Vahid Vahedi
IPC分类号： H01L21311
CPC分类号： H01L21/3065 , H01L21/76229 , H01L21/76232
摘要： A method of etching a trench in a silicon layer is disclosed. The silicon layer is disposed below a hard mask layer having a plurality of patterned openings. The etching takes place in a plasma processing chamber. The method includes flowing a first etchant source gas into the plasma processing chamber, forming a first plasma from the first etchant source gas and etching through a first portion of the silicon layer with the first plasma at a first etch rate. The first etch rate being sufficiently slow to form an effective top-rounded attribute in a portion of the trench. The method further includes flowing a second etchant source gas into the plasma processing chamber, forming a second plasma from the second etchant source gas and etching through a second portion of the silicon layer with the second plasma, wherein the etching with the second plasma extends the trench into the silicon layer without unduly damaging the top rounded attribute.
摘要翻译：公开了一种在硅层中蚀刻沟槽的方法。硅层设置在具有多个图案化开口的硬掩模层的下方。蚀刻发生在等离子体处理室中。该方法包括将第一蚀刻剂源气体流入等离子体处理室，从第一蚀刻剂源气体形成第一等离子体，并以第一蚀刻速率用第一等离子体蚀刻硅层的第一部分。第一蚀刻速率足够慢以在沟槽的一部分中形成有效的顶圆属性。该方法还包括使第二蚀刻剂源气体流入等离子体处理室，从第二蚀刻剂源气体形成第二等离子体，并用第二等离子体蚀刻硅层的第二部分，其中用第二等离子体进行的蚀刻将沟槽进入硅层，而不会不适当地损坏顶部圆形属性。

4. 发明授权

US06939811B2 Apparatus and method for controlling etch depth 有权
标题翻译：用于控制蚀刻深度的装置和方法
公开(公告)号：US06939811B2
公开(公告)日：2005-09-06
申请号：US10256251
申请日：2002-09-25
申请人： Tom A. Kamp , Alan J. Miller , Vijayakumar C. Venugopal
发明人： Tom A. Kamp , Alan J. Miller , Vijayakumar C. Venugopal
IPC分类号： H01L21/00 , H01L21/3065 , H01L21/302
CPC分类号： H01L21/67253 , H01J37/321 , H01J37/32963 , H01L21/3065 , H01L21/67069
摘要： An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.
摘要翻译：描述了一种用于蚀刻具有改进的深度控制和再现性的晶片中的特征的装置和方法。以第一蚀刻速率蚀刻该特征，然后以比第一蚀刻速率慢的第二蚀刻速率蚀刻该特征。使用光学终点装置来确定蚀刻深度并停止蚀刻，使得特征具有期望的深度。两种不同的蚀刻速率提供了高吞吐量，具有良好的深度控制和重现性。该装置包括蚀刻工具，其中卡盘夹持待蚀刻的晶片。定位光学终点装置以测量特征蚀刻深度。电子控制器与光学终点装置和蚀刻工具通信以控制工具，以通过蚀刻特征来减少蚀刻速率，并停止蚀刻工具，使得该特征被蚀刻到期望的深度。

5. 发明授权

US08609548B2 Method for providing high etch rate 有权
标题翻译：提供高蚀刻速率的方法
公开(公告)号：US08609548B2
公开(公告)日：2013-12-17
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。每个循环包括沉积阶段和蚀刻阶段。沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理房间。蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动的蚀刻气体进入等离子体处理室。

6. 发明申请

US20120309194A1 METHOD FOR PROVIDING HIGH ETCH RATE 有权
标题翻译：提供高刻蚀速率的方法
公开(公告)号：US20120309194A1
公开(公告)日：2012-12-06
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。每个循环包括沉积阶段和蚀刻阶段。沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理房间。蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动的蚀刻气体进入等离子体处理室。

7. 发明授权

US07098141B1 Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures 有权
标题翻译：使用含硅气体用于CD和轮廓特征增强了栅极和浅沟槽结构
公开(公告)号：US07098141B1
公开(公告)日：2006-08-29
申请号：US10376227
申请日：2003-03-03
申请人： Thomas A. Kamp , Alan J. Miller
发明人： Thomas A. Kamp , Alan J. Miller
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/28035 , H01L21/28044 , H01L21/32137 , H01L21/823842 , H01L29/7833
摘要： A semiconductor manufacturing process provides a shallow trench in a silicon layer using a silicon containing etch gas to provide controlled top and/or bottom rounding of the trench or to enhance profile control and/or critical dimension control by controlled deposition across a semiconductor substrate. A gate structure can be etched on a semiconductor substrate using a silicon containing gas to enhance profile control and/or critical dimension control.
摘要翻译：半导体制造工艺使用含硅蚀刻气体在硅层中提供浅沟槽，以提供受控的沟槽的顶部和/或底部圆整，或通过半导体衬底上的受控沉积来增强轮廓控制和/或临界尺寸控制。可以使用含硅气体在半导体衬底上蚀刻栅极结构，以增强轮廓控制和/或临界尺寸控制。

8. 发明授权

US06432832B1 Method of improving the profile angle between narrow and wide features 失效
标题翻译：改善窄宽特征之间轮廓角度的方法
公开(公告)号：US06432832B1
公开(公告)日：2002-08-13
申请号：US09346562
申请日：1999-06-30
申请人： Alan J. Miller , Yosias Melaku
发明人： Alan J. Miller , Yosias Melaku
IPC分类号： H01L2176
CPC分类号： H01L21/76232 , H01L21/3065 , H01L21/31116 , H01L21/76229 , Y10S438/978
摘要： A method of performing a shallow trench isolation etch in a silicon layer of a layer stack is disclosed. The layer stack includes a silicon layer being disposed below a pad oxide layer, the pad oxide being disposed below a nitride layer, and the nitride layer being disposed below a photoresist mask. The etching takes place in a plasma processing chamber. The method includes flowing a first etchant source gas into the plasma processing chamber, forming a first plasma from the first etchant source gas, and etching through the nitride layer with the first plasma. The method further includes flowing a second etchant source gas into the plasma processing chamber, forming a second plasma from the second etchant source gas, and substantially removing the photoresist mask with the second plasma, wherein a substantial portion of the photoresist mask is removed from above the nitride layer before the silicon layer. The method additionally includes flowing a third etchant source gas into the plasma processing chamber, forming a third plasma from the third etchant source gas, and etching through the pad oxide layer and substantially stopping on the silicon layer. The method also includes flowing a fourth etchant source gas into the plasma processing chamber, forming a fourth plasma from the fourth etchant source gas, and etching through the silicon layer with the fourth plasma, the etching forming a narrow feature and a wide feature in the silicon layer, and wherein a first profile angle of the narrow feature is substantially equal to a second profile angle of the wide feature.
摘要翻译：公开了一种在层叠层的硅层中进行浅沟槽隔离蚀刻的方法。所述层叠层包括设置在焊盘氧化物层下方的硅层，所述焊盘氧化物设置在氮化物层下方，并且所述氮化物层设置在光致抗蚀剂掩模下方。蚀刻发生在等离子体处理室中。该方法包括将第一蚀刻剂源气体流入等离子体处理室，从第一蚀刻剂源气体形成第一等离子体，并用第一等离子体蚀刻通过氮化物层。该方法还包括使第二蚀刻剂源气体流入等离子体处理室，从第二蚀刻剂源气体形成第二等离子体，并用第二等离子体基本上去除光致抗蚀剂掩模，其中光致抗蚀剂掩模的大部分从上面去除在硅层之前的氮化物层。该方法还包括将第三蚀刻剂源气体流入等离子体处理室，从第三蚀刻剂源气体形成第三等离子体，以及蚀刻通过焊盘氧化物层并基本停止在硅层上。该方法还包括将第四蚀刻剂源气体流入等离子体处理室，从第四蚀刻剂源气体形成第四等离子体，并用第四等离子体蚀刻穿过硅层，蚀刻形成窄特征，并且在硅层，并且其中窄特征的第一轮廓角基本上等于宽特征的第二轮廓角。

9. 发明授权

US6162910A Process for preparing lipophilic oligosaccharide antibiotics 失效
标题翻译：制备亲脂寡糖抗生素的方法
公开(公告)号：US6162910A
公开(公告)日：2000-12-19
申请号：US201198
申请日：1998-11-30
申请人： John K. Jenkins , Alan J. Miller
发明人： John K. Jenkins , Alan J. Miller
IPC分类号： C07H19/01 , C07H1/00 , A61K31/715
CPC分类号： C07H19/01
摘要： Process for preparing a lipophilic oligosaccharide antibiotic containing a nitro group using oxidizing agents and catalysts such as cobalt, manganese and copper having an oxidation state of +2 are disclosed.
摘要翻译：公开了使用氧化剂和氧化态为+2的催化剂例如钴，锰和铜制备含有硝基的亲脂寡糖抗生素的方法。

10. 发明授权

US08871105B2 Method for achieving smooth side walls after Bosch etch process 有权
标题翻译：博世蚀刻工艺后实现平滑侧壁的方法
公开(公告)号：US08871105B2
公开(公告)日：2014-10-28
申请号：US13416465
申请日：2012-03-09
申请人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
发明人： Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller , Qing Xu , Seongjun Heo , Jin Hwan Ham , Sang Joon Yoon , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308
CPC分类号： H01L21/30655 , B81C1/00619 , B81C2201/0112 , H01L21/3086
摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.
摘要翻译：提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并且产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

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