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1. 发明授权

US08647484B2 Target for sputtering chamber 有权
标题翻译：溅射室靶
公开(公告)号：US08647484B2
公开(公告)日：2014-02-11
申请号：US11558929
申请日：2006-11-12
申请人： Alan Alexander Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen A. Scheible , Umesh Kelkar
发明人： Alan Alexander Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen A. Scheible , Umesh Kelkar
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/32477 , H01J37/34 , H01J37/3408 , H01J37/3423 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.
摘要翻译：溅射室具有包括背板和溅射板的溅射靶。背板具有凹槽。溅射板包括具有平面的圆柱形台面和围绕圆柱形台面的环形倾斜边缘。在一个版本中，背板包括具有高导热性和低电阻率的材料。在另一种形式中，背板包括具有单个凹槽或多个凹槽的背面。

2. 发明授权

US08790499B2 Process kit components for titanium sputtering chamber 有权
标题翻译：钛溅射室的工艺套件组件
公开(公告)号：US08790499B2
公开(公告)日：2014-07-29
申请号：US11558928
申请日：2006-11-12
申请人： Donny Young , Alan Alexander Ritchie , Ilyoung (Richard) Hong , Kathleen A. Scheible
发明人： Donny Young , Alan Alexander Ritchie , Ilyoung (Richard) Hong , Kathleen A. Scheible
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/32477 , H01J37/34 , H01J37/3408 , H01J37/3423 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： A process kit for a sputtering chamber comprises a deposition ring, cover ring, and a shield assembly, for placement about a substrate support in a sputtering chamber. The deposition ring comprising an annular band with an inner lip extending transversely, a raised ridge substantially parallel to the substrate support, an inner open channel, and a ledge radially outward of the raised ridge. A cover ring at least partially covers the deposition ring, the cover ring comprising an annular plate comprising a footing which rests on a surface about the substrate support, and downwardly extending first and second cylindrical walls.
摘要翻译：用于溅射室的处理套件包括沉积环，盖环和屏蔽组件，用于放置在溅射室中的衬底支撑件周围。沉积环包括具有横向延伸的内唇缘的环形带，基本上平行于基底支撑件的凸脊，内开口通道和径向向外突出的凸缘。盖环至少部分地覆盖沉积环，盖环包括环形板，环形板包括搁置在基板支撑件周围的表面上的基脚以及向下延伸的第一和第二圆柱形壁。

3. 发明授权

US07422664B2 Method for plasma ignition 有权
标题翻译：等离子体点火方法
公开(公告)号：US07422664B2
公开(公告)日：2008-09-09
申请号：US11346785
申请日：2006-02-03
申请人： Alan Alexander Ritchie , Adolph Miller Allen
发明人： Alan Alexander Ritchie , Adolph Miller Allen
IPC分类号： C23C14/34
CPC分类号： H01J37/32009
摘要： A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.
摘要翻译：本文提供了一种用于点燃半导体处理室中的等离子体的方法。在一个实施例中，一种用于点燃具有电隔离阳极的半导体衬底处理室中的等离子体的方法，其中等离子体在将等离子体点火电压施加到处理室的阴极时不能点燃，包括降低幅度的步骤施加到阴极的电压; 将等离子体点火电压重新施加到阴极; 并监测处理室以确定等离子体是否已点燃。监测处理室的步骤可以具有第一时间段的持续时间。降低施加到阴极的电压的大小的步骤可以具有第二时间段的持续时间。可以重复降低阴极电压幅度并重新施加等离子体点火电压的步骤，直到等离子体点燃。

4. 发明申请

US20100151676A1 DENSIFICATION PROCESS FOR TITANIUM NITRIDE LAYER FOR SUBMICRON APPLICATIONS 审中-公开
标题翻译：氮化钛纳米层应用的渗透过程
公开(公告)号：US20100151676A1
公开(公告)日：2010-06-17
申请号：US12335582
申请日：2008-12-16
申请人： Alan Alexander Ritchie , Mohd Fadzil Anwar Hassan
发明人： Alan Alexander Ritchie , Mohd Fadzil Anwar Hassan
IPC分类号： H01L21/441 , H01L21/443
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/56 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76862
摘要： Embodiments of the present invention provide methods of forming and densifying a titanium nitride barrier layer. The densification process is performed at a relatively low RF plasma power and high nitrogen to hydrogen ratio so as to provide a substantially titanium rich titanium nitride barrier layer. In one embodiment, a method for forming a titanium nitride barrier layer on a substrate includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition process, and performing a plasma treatment process on the deposited titanium nitride layer, wherein the plasma treatment process operates to densify the deposited titanium nitride layer, resulting in a densified titanium nitride layer, wherein the plasma treatment process further comprises supplying a plasma gas mixture containing a nitrogen gas to hydrogen gas ratio between about 20:1 and about 3:1, and applying less than about 500 Watts RF power to the plasma gas mixture.
摘要翻译：本发明的实施例提供了形成和致密化氮化钛阻挡层的方法。致密化过程以相对较低的RF等离子体功率和高的氮与氢比进行，从而提供基本上富钛的氮化钛阻挡层。在一个实施例中，在衬底上形成氮化钛阻挡层的方法包括通过金属 - 有机化学气相沉积工艺在衬底上沉积氮化钛层，并对沉积的氮化钛层进行等离子体处理工艺，其中等离子体处理工艺用于致密化沉积的氮化钛层，产生致密化的氮化钛层，其中等离子体处理工艺还包括将含有氮气的等离子体气体混合物与约20:1至约3:1的氢气比并且向等离子体气体混合物施加小于约500瓦的RF功率。

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