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    • 4. 发明申请
    • DEPOSITION HEAD AND FILM FORMING APPARATUS
    • 沉积头和成膜装置
    • US20120031339A1
    • 2012-02-09
    • US13262335
    • 2010-04-02
    • Yuji OnoTomohiko EduraTeruyuki HayashiAkitake TamuraMisako Saito
    • Yuji OnoTomohiko EduraTeruyuki HayashiAkitake TamuraMisako Saito
    • C23C16/455
    • C23C14/12C23C14/24H01L51/001H01L51/50
    • There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.
    • 提供一种沉积头,其能够在大尺寸基板中排出具有均匀流速和等热特性的材料气体,以及用于形成均匀薄膜的常规小尺寸基板。 还提供了包括沉积头的沉积设备。 沉积头设置在用于在衬底上形成薄膜并用于将材料气体朝向衬底排出的沉积设备中。 沉积头包括外壳和设置在外壳内并且材料气体被引入的内壳。 在内壳体中,形成有将材料气体朝向基板排出的开口,在外壳的外表面或外壳与内壳之间的空间内设置加热材料气体的加热器 。
    • 8. 发明授权
    • Vacuum processing apparatus and method
    • 真空处理装置及方法
    • US07993458B2
    • 2011-08-09
    • US12169660
    • 2008-07-09
    • Masaki KondoTeruyuki HayashiMisako Saito
    • Masaki KondoTeruyuki HayashiMisako Saito
    • C23C16/00H01L21/306C23F1/00
    • H01L21/67253C23C16/4408C23C16/54H01L21/02041H01L21/67196H01L21/67288Y10S414/139
    • A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (N2 gas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.
    • 排气单元以恒定的排气速率排出真空传送室的内部。 气体排气阀保持常开,通过质量流量控制器(MFC)和打开/关闭阀将净化气体(N 2气)从净化气体供应源供应到真空传送室。 主控制单元通过真空传送室中的压力通过真空计监视真空传送室中的压力,将真空传送室中的压力通过MFC的流量设定值控制在规定范围内。 主控制单元在压力超过规定的上限的情况下,判定异常的发生,然后采取改变MFC的流量设定值,报警并停止真空处理装置的动作等动作。
    • 9. 发明授权
    • Apparatus and method for measuring the concentration of organic gas
    • 用于测量有机气体浓度的装置和方法
    • US07946152B2
    • 2011-05-24
    • US11916842
    • 2006-06-02
    • Misako SaitoTeruyuki Hayashi
    • Misako SaitoTeruyuki Hayashi
    • G01N33/00G01N7/00
    • G01N30/06G01N2030/062G01N2030/128
    • In a measuring apparatus, an atmosphere to be inspected taken out from a space to be inspected in a processing system is analyzed for organic gas concentration. The apparatus is provided with a collector having an approach connected to the space to be inspected. The collector is connected to a gas exhaust system and an adsorption material for preparing a captured organic gas is held in the collector. A temperature control mechanism including a heater controls the adsorption/desorption of organic gas through temperature control of the adsorption material. A carrier gas is supplied from a carrier gas supplying system in order to transfer the desorbed gas taken from the captured organic gas and the concentration of organic gas in the carrier gas transferring the desorbed gas is determined in a concentration measuring unit.
    • 在测量装置中,分析在处理系统中从要检查的空间中取出的待检查气氛中的有机气体浓度。 该设备设置有具有连接到待检查空间的方法的收集器。 收集器连接到排气系统,并且用于制备捕获的有机气体的吸附材料保持在收集器中。 包括加热器的温度控制机构通过吸附材料的温度控制来控制有机气体的吸附/解吸。 从载气供给系统供给载气,以便从被捕获的有机气体中取出的解吸气体转移,并且在浓度测定单元中确定转移脱附气体的载气中的有机气体的浓度。