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1. 发明授权

US4897710A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4897710A
公开(公告)日：1990-01-30
申请号：US86490
申请日：1987-08-18
申请人： Akira Suzuki , Katsuki Furukawa , Akitsugu Hatano , Atsuko Uemoto
发明人： Akira Suzuki , Katsuki Furukawa , Akitsugu Hatano , Atsuko Uemoto
IPC分类号： H01L21/205 , H01L21/02 , H01L21/338 , H01L23/14 , H01L29/24 , H01L29/78 , H01L29/812
CPC分类号： H01L29/1608 , H01L23/147 , H01L28/40 , H01L2924/0002
摘要： The semiconductor device comprises a silicon substrate, a boron-doped high resistant silicon carbide layer that is formed on the silicon substrate and a silicon carbide layer formed on the high resistant silicon carbide layer. The silicon carbide layer that is formed on the high resistant silicon carbide layer provides an electrical insulation for the device so that improved device characteristics are obtained.
摘要翻译：半导体器件包括硅衬底，形成在硅衬底上的掺硼高耐磨碳化硅层和形成在耐高压碳化硅层上的碳化硅层。在耐高压碳化硅层上形成的碳化硅层为器件提供电绝缘，从而获得改进的器件特性。

2. 发明授权

US5229625A Schottky barrier gate type field effect transistor 失效
标题翻译：肖特基势垒栅型场效应晶体管
公开(公告)号：US5229625A
公开(公告)日：1993-07-20
申请号：US764954
申请日：1991-09-25
申请人： Akira Suzuki , Katsuki Furukawa , Akitsugu Hatano , Atsuko Uemoto
发明人： Akira Suzuki , Katsuki Furukawa , Akitsugu Hatano , Atsuko Uemoto
IPC分类号： H01L21/02 , H01L23/14 , H01L29/24
CPC分类号： H01L29/1608 , H01L23/147 , H01L28/40 , H01L2924/0002
摘要： The semiconductor device somprises a silicon substrate, a boron-doped high resistant silicon carbide layer formed on said silicon substrate and a silicon carbide layer formed on said high resistant silicon carbide layer.
摘要翻译：半导体器件具有硅衬底，在所述硅衬底上形成的掺硼高耐磨碳化硅层和形成在所述耐高压碳化硅层上的碳化硅层。

3. 发明授权

US4865659A Heteroepitaxial growth of SiC on Si 失效
标题翻译： SiC在Si上的异质外延生长
公开(公告)号：US4865659A
公开(公告)日：1989-09-12
申请号：US124732
申请日：1987-11-24
申请人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii , Akitsugu Hatano , Atsuko Uemoto , Kenji Nakanishi
发明人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii , Akitsugu Hatano , Atsuko Uemoto , Kenji Nakanishi
IPC分类号： C30B25/02 , C30B25/18
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , Y10S148/029 , Y10S148/072 , Y10S148/097 , Y10S148/148 , Y10S438/938
摘要： A heteroepitaxial growth method comprising growing a semiconductor single-crystal film on a semiconductor single-crystal substrate with a lattice constant different from that of the semiconductor single-crystal film by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film being inclined at a certain angle with respect to the semiconductor single-crystal substrate.
摘要翻译：异质外延生长方法包括通过化学气相沉积在与半导体单晶膜的晶格常数不同的半导体单晶衬底上生长半导体单晶膜，半导体单晶膜的外延取向倾斜相对于半导体单晶衬底以一定角度。

4. 发明授权

US4990994A Electrode structure for silicon carbide semiconductors 失效
标题翻译：碳化硅半导体的电极结构
公开(公告)号：US4990994A
公开(公告)日：1991-02-05
申请号：US403016
申请日：1989-09-05
申请人： Katsuki Furukawa , Akira Suzuki , Mitsuhiro Shigeta , Atsuko Uemoto
发明人： Katsuki Furukawa , Akira Suzuki , Mitsuhiro Shigeta , Atsuko Uemoto
IPC分类号： H01L29/43 , H01L21/28 , H01L29/24 , H01L29/45 , H01L33/34 , H01L33/40
CPC分类号： H01L29/1608 , H01L29/45
摘要： An electrode structure for a silicon carbide single-crystal semiconductor in which the surface of the silicon carbide single-crystal is laminated with a metal layer of titanium, aluminum, chromium or molybdenum, or with the metal layer and an electrically conductive protective layer formed over the metal layer to provide an ohmic electrode.
摘要翻译：一种用于碳化硅单晶半导体的电极结构，其中碳化硅单晶的表面层叠有钛，铝，铬或钼的金属层，或与金属层和导电保护层形成的金属层金属层提供欧姆电极。

5. 发明授权

US5279701A Method for the growth of silicon carbide single crystals 失效
标题翻译：碳化硅单晶生长方法
公开(公告)号：US5279701A
公开(公告)日：1994-01-18
申请号：US933964
申请日：1992-08-24
申请人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii
发明人： Mitsuhiro Shigeta , Akira Suzuki , Katsuki Furukawa , Yoshihisa Fujii
IPC分类号： C30B25/02 , C30B25/18 , C30B23/02
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , Y10S148/148 , Y10S438/931 , Y10S438/973
摘要： A method for the growth of silicon carbide single crystals is disclosed which includes the step of growing silicon carbide single crystals on a silicon single-crystal substrate. The silicon single-crystal substrate has growth areas with a crystal orientation inclined by an angle .theta. from the [100] direction toward at least one of the [011] and [011] directions and with a lateral dimension d taken along the direction of such inclination toward the [011] or [011] direction. The angle .theta. is set to be in the range of zero to tan.sup.-1 (.sqroot.2/8) degrees (with the proviso that the angle .theta. is not equal to tan.sup.-1 (.sqroot.2/2) degrees). The lateral dimension d is set to be in the range of 0.1 to 100 .mu.m. In this method, the silicon carbide single crystals are grown to a thickness t approximately equal to or greater than (.sqroot.2+tan.theta.)d/.vertline.1-.sqroot.2tan.theta..vertline., so that these silicon carbide single crystals are substantially free of defects such as stacking faults.
摘要翻译：公开了一种用于生长碳化硅单晶的方法，其包括在硅单晶衬底上生长碳化硅单晶的步骤。硅单晶衬底具有晶体取向从（100）方向朝向（011）和（011）方向中的至少一个方向倾斜角度（θ）的生长区域，并且沿着方向朝向（011）或（011）方向倾斜。角度（θ）设定为零到tan-1（（平方根）2/8）度的范围（条件是角度（θ）不等于tan-1（（平方根） 2/2）度）。横向尺寸d设定在0.1到100（my）m的范围内。在该方法中，碳化硅单晶生长至大致等于或大于（（平方根）2 + tan（θ））d // 1-（平方根）2tan（θ）/的厚度t，使得这些碳化硅单晶基本上没有诸如堆垛层错的缺陷。

6. 发明授权

US5230768A Method for the production of SiC single crystals by using a specific substrate crystal orientation 失效
标题翻译：通过使用特定的衬底晶体取向生产SiC单晶的方法
公开(公告)号：US5230768A
公开(公告)日：1993-07-27
申请号：US845500
申请日：1992-02-28
申请人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
发明人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
IPC分类号： C30B25/02 , C30B25/18
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , Y10S148/148 , Y10S438/931 , Y10S438/973
摘要： There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle .theta. of 5 to 40 degrees, as measured from the [011] direction toward the [011] direction, and a tilt angle .phi. of 1 to 7 degrees, as measured from the [100] direction toward the off-direction; and growing a silicon carbide single crystal on the substrate.
摘要翻译：提供了一种制造碳化硅单晶的方法，其包括以下步骤：提供具有从[100]方向向偏离方向倾斜的晶体取向的生长面的硅单晶衬底，其中从[011]方向向[01＆lt; 1]方向测量的偏离角度θ为5〜40度，倾斜角度为1〜7度，由[100 ]方向朝向偏离方向; 并在衬底上生长碳化硅单晶。

7. 发明授权

US5135885A Method of manufacturing silicon carbide FETS 失效
标题翻译：制造碳化硅FET的方法
公开(公告)号：US5135885A
公开(公告)日：1992-08-04
申请号：US499889
申请日：1990-03-27
申请人： Katsuki Furukawa , Yoshihisa Fujii , Mitsuhiro Shigeta , Akira Suzuki
发明人： Katsuki Furukawa , Yoshihisa Fujii , Mitsuhiro Shigeta , Akira Suzuki
IPC分类号： H01L21/04 , H01L29/24 , H01L29/786 , H01L29/812
CPC分类号： H01L29/1608 , H01L21/0445 , H01L29/78684 , H01L29/8126 , Y10S438/931
摘要： A method of manufacturing a semiconductor device comprises the steps of (i) forming a SiC monocrystal layer over the entire surface of a semiconductor substrate; (ii) forming a boron ion implanted layer, which is substantially a thin film, by implanting a specified amount of boron ions in the surface region of the SiC monocrystal layer; and (iii) forming a high resistance SiC monocrystal layer of a thin film by subjecting the boron ion implanted layer to heat treatment; whereby the high resistance SiC monocrystal layer can be function at least as an electric insulating layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（i）在半导体衬底的整个表面上形成SiC单晶层; （ii）通过在SiC单晶层的表面区域中注入规定量的硼离子形成基本上为薄膜的硼离子注入层; 和（iii）通过对硼离子注入层进行热处理来形成薄膜的高电阻SiC单晶层; 由此，高电阻SiC单晶层至少可以作为电绝缘层起作用。

8. 发明授权

US5124779A Silicon carbide semiconductor device with ohmic electrode consisting of alloy 失效
标题翻译：具有欧姆电极的碳化硅半导体器件由合金组成
公开(公告)号：US5124779A
公开(公告)日：1992-06-23
申请号：US601245
申请日：1990-10-17
申请人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
发明人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
IPC分类号： H01L21/285 , H01L21/04 , H01L21/28 , H01L29/24 , H01L29/43 , H01L29/45
CPC分类号： H01L29/1608 , H01L21/0485 , H01L29/45 , H01L29/66068 , H01L2924/0002
摘要： A silicon carbide semiconductor device is disclosed which includes a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode is made of a titanium-aluminum alloy. Also disclosed is a method of producing the silicon carbide semiconductor device.
摘要翻译：公开了一种碳化硅半导体器件，其包括碳化硅单晶层和与碳化硅单晶层接触的至少一个欧姆电极，其中欧姆电极由钛 - 铝合金制成。还公开了一种制造碳化硅半导体器件的方法。

9. 发明授权

US5433167A Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal 失效
标题翻译：使用晶种的升华重结晶法生产碳化硅单晶的方法
公开(公告)号：US5433167A
公开(公告)日：1995-07-18
申请号：US156472
申请日：1993-11-23
申请人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
发明人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
IPC分类号： C30B23/02 , C30B29/36
CPC分类号： C30B23/02 , C30B23/002 , C30B29/36
摘要： There is provided a method of producing a high-quality n-type, 6H silicon carbide single crystal with good reproducibility. A silicon carbide single crystal substrate having a growth orientation of , as a seed crystal, is mounted to an inner surface of a cover of a graphite crucible. A source material includes a high-purity silicon carbide powder having an impurity proportion of not more than 1 ppm and an aluminum powder of 50 ppm relative to the silicon carbide powder. The source material is loaded into the graphite crucible. The graphite crucible is closed with a seed crystal-mounted cover placed in a double quartz tube. Ar gas and N.sub.2 gas are caused to flow in the double quartz tube. Temperature of the silicon carbide powder and aluminum powder is controlled to 2300.degree. C., and temperature of the silicon carbide single crystal substrate to 2200.degree. C.; and interior of the double quartz tube is controlled to 30 torr. Silicon carbide single crystal growth is effected on the seed crystal under these conditions. A high-quality n-type, 6H silicon carbide single crystal is thus obtained which has a uniform crystal structure with little defect, if any, throughout its structure, from the substrate surface to the outermost grown surface, and has a specific resistance of 0.5 .OMEGA.cm.
摘要翻译：提供了一种制造高品质的n型，6H碳化硅单晶，具有良好的再现性的方法。具有生长方向<0001>的碳化硅单晶衬底作为晶种安装在石墨坩埚的盖的内表面上。源材料包括杂质比例不大于1ppm的高纯度碳化硅粉末和相对于碳化硅粉末为50ppm的铝粉末。将原料装入石墨坩埚中。石墨坩埚用放置在双重石英管中的晶种安装的盖封闭。使Ar气和N2气在双重石英管中流动。将碳化硅粉末和铝粉末的温度控制在2300℃，将碳化硅单晶基板的温度控制在2200℃。并将双重石英管的内部控制在30乇。在这些条件下，对晶种进行碳化硅单晶生长。因此获得了高质量的n型6H碳化硅单晶，其具有从基材表面到最外面的生长表面的整个结构中几乎没有缺陷（如果有的话）的均匀晶体结构，并且具有0.5的电阻率欧米茄厘米

10. 发明授权

US5319220A Silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件
公开(公告)号：US5319220A
公开(公告)日：1994-06-07
申请号：US895452
申请日：1992-06-08
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii , Atsuko Ogura
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii , Atsuko Ogura
IPC分类号： H01L29/24 , H01L29/737 , H01L31/0312 , H01L33/34 , H01L29/161 , H01L21/20
CPC分类号： H01L33/34 , H01L29/1608 , H01L29/7371 , H01L31/0312 , Y10S438/931
摘要： A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a .beta.-type silicon carbide layer having an .alpha.-type silicon carbide layer disposed thereon.
摘要翻译：提供了一种碳化硅半导体器件，其包括由两种不同的碳化硅多型材组成的至少一个异质结。异质结中的碳化硅的两种多型体包括其上设置有α型碳化硅层的β型碳化硅层。

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