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    • 4. 发明授权
    • Method of and apparatus for manufacturing semiconductors
    • 制造半导体的方法和装置
    • US06706647B1
    • 2004-03-16
    • US09524510
    • 2000-03-13
    • Yoshitsugu TsutsumiYoshio OkamotoHideki TomiokaAkira OhkawaToshio Ando
    • Yoshitsugu TsutsumiYoshio OkamotoHideki TomiokaAkira OhkawaToshio Ando
    • H01L21469
    • H01L21/6715
    • A method of and an apparatus for manufacturing semiconductors, in which a liquid raw material can be uniformly supplied onto a wafer and a gas required for film formation can be also uniformly supplied onto the wafer. A liquid raw material is sprayed from a tip end of a vaporizing nozzle into a vacuum chamber as liquid droplets, and is vaporized by heat generated from the wafer placed on a susceptor. When the liquid raw material is sprayed, a gas required for film forming reaction is supplied into the vacuum chamber from a gas supply pipe provided on an outer periphery of the vaporizing nozzle. The vaporizing nozzle and the gas supply pipe are formed to be concentric, and a liquid raw material spray port is formed centrally of the vaporizing nozzle. A gas supply port or ports on the gas supply pipe are formed on an outer peripheral portion of the vaporizing nozzle to be arranged in annular manner, and the liquid raw material spray port and the gas supply port or ports are formed to be in parallel to each other in a longitudinal direction. The gas supply port or ports are arranged in the same plane as the liquid raw material spray port is, or on an upstream side where the liquid raw material is supplied.
    • 可以将液体原料均匀地供给到晶片上,并且可以将均匀地供给到晶片上的成膜所需的气体的半导体制造方法和装置。 将液体原料从蒸发喷嘴的前端喷射到作为液滴的真空室中,并通过从放置在基座上的晶片产生的热量蒸发。 当喷射液体原料时,成膜反应所需的气体从设置在蒸发喷嘴的外周上的气体供给管供给到真空室中。 蒸发喷嘴和气体供给管形成为同心的,并且在蒸发喷嘴的中央形成液体原料喷射口。 气体供给管上的气体供给口形成在蒸发喷嘴的外周部,环状配置,液体原料喷射口和气体供给口形成为与 彼此沿纵向。 气体供给口配置在与液体原料喷射口相同的平面内,或配置在供给液体原料的上游侧。