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    • 2. 发明授权
    • Vehicle on which millimeter wave radar is mounted
    • 载有毫米波雷达的车辆
    • US6081223A
    • 2000-06-27
    • US308024
    • 1999-05-11
    • Yasuo KitaharaTaku MurakamiKunihiro Yamasaki
    • Yasuo KitaharaTaku MurakamiKunihiro Yamasaki
    • G01S13/93
    • G01S13/931G01S2013/9321G01S2013/9339G01S2013/9342G01S2013/9346G01S2013/9353G01S2013/9375
    • The present invention relates to a vehicle with a millimeter wave radar by which not only a distance and a relative velocity can be measured but also traffic information of other various kinds can be obtained. A reflector (4a) which is installed at a predetermined position (5) near a road along which the vehicle (1) is traveling and changes the reflection intensity of a reflected wave (3b) every predetermined period of time to indicate a road state (X) near the predetermined position (5) and traffic information with the change (N1), a memory unit (6) which is mounted on the vehicle (1) and in which the change (N1) and an operation command (S1) of the vehicle (1) based upon the change (N1) are stored beforehand, being made to correspond to each other, and a control unit (8) which is mounted on the vehicle (1), reads the operation command (S1) corresponding to the change (N1) detected by the millimeter wave radar from the memory unit (6) and supplies the read operation command (S1) to a vehicle operating means (7) of the vehicle (1) to operate the vehicle (1) are provided.
    • PCT No.PCT / JP97 / 04089 Sec。 371日期1999年5月11日 102(e)日期1999年5月11日PCT 1997年11月11日PCT公布。 公开号WO98 / 21604 日期1998年5月22日本发明涉及一种具有毫米波雷达的车辆,不仅可以测量距离和相对速度,而且可以获得其他各种交通信息。 安装在车辆(1)行进的道路附近的预定位置(5)的反射器(4a),每隔预定时间段改变反射波(3b)的反射强度,以指示道路状态( X)和具有变化(N1)的交通信息,安装在车辆(1)上的存储单元(6),并且其中改变(N1)和操作命令(S1) 基于改变(N1)的车辆(1)预先存储在彼此对应的位置,以及安装在车辆(1)上的控制单元(8),读取对应于 提供由毫米波雷达从存储器单元(6)检测到的改变(N1)并且将读取操作命令(S1)提供给车辆(1)的车辆操作装置(7)以操作车辆(1) 。
    • 4. 发明授权
    • Quartz glass tool for heat treatment of silicon wafer and process for producing the same
    • 用于硅晶片热处理的石英玻璃工具及其制造方法
    • US07997956B2
    • 2011-08-16
    • US11921969
    • 2006-06-01
    • Junichi TsuruzoeShinichi OkoshiKunihiro Yamasaki
    • Junichi TsuruzoeShinichi OkoshiKunihiro Yamasaki
    • B28D5/00B24B1/00
    • H01L21/67303H01L21/67306
    • To provide a quartz glass tool, for silicon wafer heat treatment, having a transparent grooving face, which is free from the deposition of particles of a transition metal element foreign material derived from glass dust or diamond blade produced by breakdown of acute irregularities based on opening of very small concaves and convexes and microcracks, causes no significant change in dimension also in cleaning with hydrofluoric acid, and can maintain a high degree of cleanness even after use of a long period of time, and to provide a process for producing the same. A quartz glass tool for silicon wafer heat treatment, comprising a wafer mounting member having a grooving face formed by machining, characterized in that the whole grooving face of the wafer mounting member is transparent, the surface roughness is 0.03 to 0.3 μm in terms of center line average roughness (Ra) and 0.2 to 3.0 μm in terms of maximum roughness (Rmax), and a change in center line average roughness and maximum roughness after etching with a 5% aqueous hydrogen fluoride solution for 24 hr is not more than 50%. A process for producing a quartz glass tool for silicon wafer heat treatment, comprising roughly machining a wafer mounting member with a diamond blade having a rough particle size, conducting remachining with a diamond blade having a finer particle size than the above diamond blade, and then subjecting the inside of the groove to firing finishing.
    • 为了提供一种用于硅晶片热处理的石英玻璃工具,其具有透明的开槽面,其没有由基于开口的急剧不规则性破坏而产生的衍生自玻璃粉尘或金刚石刀片的过渡金属元素异物的沉积 非常小的凹凸和微裂纹,在用氢氟酸清洗时也不会发生显着的尺寸变化,并且即使在长时间使用后也能保持高度的清洁度,并提供其制造方法。 一种用于硅晶片热处理的石英玻璃工具,包括具有通过机械加工形成的开槽面的晶片安装构件,其特征在于,所述晶片安装构件的整个开槽面为透明的,表面粗糙度为中心为0.03〜0.3μm 线平均粗糙度(Ra),最大粗糙度(Rmax)为0.2〜3.0μm,用5%氟化氢水溶液蚀刻24小时后的中心线平均粗糙度和最大粗糙度的变化为50%以下, 。 一种用于制造用于硅晶片热处理的石英玻璃工具的方法,包括用具有粗糙粒度的金刚石刀片大致加工晶片安装构件,与具有比上述金刚石刀片更细的粒度的金刚石刀片进行再加工,然后 对槽内进行烧成加工。
    • 5. 发明申请
    • Quartz Glass Tool for Heat Treatment of Silicon Wafer and Process for Producing the Same
    • 用于硅晶片热处理的石英玻璃工具及其制造方法
    • US20080149575A1
    • 2008-06-26
    • US11921969
    • 2006-06-01
    • Junichi TsuruzoeShinichi OkoshiKunihiro Yamasaki
    • Junichi TsuruzoeShinichi OkoshiKunihiro Yamasaki
    • H01L21/683B28D5/00
    • H01L21/67303H01L21/67306
    • To provide a quartz glass tool, for silicon wafer heat treatment, having a transparent grooving face, which is free from the deposition of particles of a transition metal element foreign material derived from glass dust or diamond blade produced by breakdown of acute irregularities based on opening of very small concaves and convexes and microcracks, causes no significant change in dimension also in cleaning with hydrofluoric acid, and can maintain a high degree of cleanness even after use of a long period of time, and to provide a process for producing the same. A quartz glass tool for silicon wafer heat treatment, comprising a wafer mounting member having a grooving face formed by machining, characterized in that the whole grooving face of the wafer mounting member is transparent, the surface roughness is 0.03 to 0.3 μm in terms of center line average roughness (Ra) and 0.2 to 3.0 μm in terms of maximum roughness (Rmax), and a change in center line average roughness and maximum roughness after etching with a 5% aqueous hydrogen fluoride solution for 24 hr is not more than 50%. A process for producing a quartz glass tool for silicon wafer heat treatment, comprising roughly machining a wafer mounting member with a diamond blade having a rough particle size, conducting remachining with a diamond blade having a finer particle size than the above diamond blade, and then subjecting the inside of the groove to firing finishing.
    • 为了提供一种用于硅晶片热处理的石英玻璃工具,其具有透明的开槽面,其没有由基于开口的急剧不规则性破坏而产生的衍生自玻璃粉尘或金刚石刀片的过渡金属元素异物的沉积 非常小的凹凸和微裂纹,在用氢氟酸清洗时也不会发生显着的尺寸变化,并且即使在长时间使用后也能保持高度的清洁度,并提供其制造方法。 一种用于硅晶片热处理的石英玻璃工具,包括具有通过机械加工形成的开槽面的晶片安装构件,其特征在于,所述晶片安装构件的整个开槽面是透明的,表面粗糙度为中心为0.03〜0.3μm 线平均粗糙度(Ra)为0.2〜3.0μm,最大粗糙度为Rmax为0.2〜3.0μm,用5%氟化氢水溶液蚀刻24小时后的中心线平均粗糙度和最大粗糙度的变化为50%以下, 。 一种用于制造用于硅晶片热处理的石英玻璃工具的方法,包括用具有粗粒度的金刚石刀片大致加工晶片安装构件,与具有比上述金刚石刀片更细的粒度的金刚石刀片进行再加工,然后 对槽内进行烧成加工。
    • 6. 发明授权
    • Vehicle with millimeter-wave radar
    • 车载毫米波雷达
    • US6073078A
    • 2000-06-06
    • US101977
    • 1998-07-30
    • Yasuo KitaharaKunihiro YamasakiTaku Murakami
    • Yasuo KitaharaKunihiro YamasakiTaku Murakami
    • G01S7/02G01S7/03G01S13/50G01S13/93G06F15/50
    • G01S13/931G01S7/03G01S2013/9375
    • The present invention relates to a vehicle with a millimeter-wave radar capable of traveling without incurring ground clutter and without the influence of pitching of the vehicle. Accordingly, a millimeter-wave transmitting/receiving antenna (2) fixed on the front surface of the vehicle (1) has an antenna beam width (.theta.) of about 4 degrees, an antenna fixing height (h) measured from a ground surface of about 1 meter to 2 meters, and a horizontal angle (.beta.) of a center (C) of the antenna beam of not less than -4 degrees. This vehicle may also be provided with a storage element (231) for storing course data (A) for the vehicle (1) in advance, an extraction element (232) for extracting a superimposed object (P3), and an identification element (233) for comparing the superimposed object (P3) with the course data (A) and identifying the superimposed object (P3).
    • PCT No.PCT / JP97 / 00205 Sec。 371日期:1998年7月30日 102(e)日期1998年7月30日PCT 1997年1月29日PCT PCT。 公开号WO97 / 28458 日期:1997年8月7日本发明涉及一种具有毫米波雷达的车辆,能够不受地面杂波的影响而不受车辆俯仰的影响。 因此,固定在车辆(1)的前表面上的毫米波发射/接收天线(2)具有大约4度的天线波束宽度(θ),从地面上测量的天线固定高度(h) 大约1米到2米,天线波​​束的中心(C)的水平角(β)不小于-4度。 该车辆还可以设置有用于预先存储车辆(1)的路线数据(A)的存储元件(231),用于提取叠加对象(P3)的提取元件(232)和识别元件(233) ),用于将叠加对象(P3)与路线数据(A)进行比较并识别叠加对象(P3)。