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1. 发明授权

US4638087A 6-substituted naphthalene-2-carboxylic acids and process for producing the same 失效
标题翻译： 6-取代萘-2-羧酸及其制备方法
公开(公告)号：US4638087A
公开(公告)日：1987-01-20
申请号：US838525
申请日：1986-03-11
申请人： Akira Iizuka , Yutaka Konai , Takashi Yamauchi , Shoichiro Hayashi
发明人： Akira Iizuka , Yutaka Konai , Takashi Yamauchi , Shoichiro Hayashi
IPC分类号： C07C63/38 , B01J27/02 , C07B61/00 , C07C51/00 , C07C51/367 , C07C63/36 , C07C65/11 , C07C67/00 , C07C407/00 , C07C409/08 , C07C63/34
CPC分类号： C07C65/11 , C07C407/00 , C07C409/08 , C07C63/36
摘要： Disclosed herein are the novel 6-substituted naphthalene-2-carboxylic acids represented by the formula (I): ##STR1## wherein X represents a hydroperoxy group or a hydroxy group, and a process for producing the 6-substituted naphthalene-2-carboxylic acid represented by the formula (I) by reacting 6-isopropylnaphthalene-2-carboxylic acid with molecular oxygen under heating in the presence of a salt of persulfuric acid as a catalyst in an aqueous alkaline solution.
摘要翻译：本文公开了由式（I）表示的新颖的6-取代萘-2-羧酸：其中X表示氢过氧基或羟基，其中X取代的萘 - （I）表示的2-异丙基-2-羧酸，在过硫酸盐作为催化剂的存在下，在碱性水溶液中，使6-异丙基萘-2-羧酸与分子氧在加热下反应。

2. 发明授权

US4607117A Methyl 2-(2-hydroperoxy-2-propyl)naphthalene-6-carboxylate and process for producing the same 失效
标题翻译： 2-（2-氢过氧-2-丙基）萘-6-羧酸甲酯及其制备方法
公开(公告)号：US4607117A
公开(公告)日：1986-08-19
申请号：US731055
申请日：1985-05-06
申请人： Akira Iizuka , Yutaka Konai , Takashi Yamauchi , Shoichiro Hayashi
发明人： Akira Iizuka , Yutaka Konai , Takashi Yamauchi , Shoichiro Hayashi
IPC分类号： C07B61/00 , B01J31/00 , B01J31/04 , C07C37/08 , C07C65/11 , C07C67/00 , C07C407/00 , C07C409/08 , C07C69/76
CPC分类号： C07C409/08 , Y02P20/582
摘要： Disclosed herein are methyl 2-(2-hydroperoxy-2-propyl)naphthalene-6-carboxylate represented by the formula (I): ##STR1## and a process for producing the compound represented by the formula (I) at a high purity and in a high yield.
摘要翻译：本文公开了由式（I）表示的2-（2-氢过氧基-2-丙基）萘-6-羧酸甲酯：（I）和由式（I）表示的化合物在纯度高，产量高。

3. 发明授权

US4814521A Process for producing 2,6-dihydroxynaphthalene and 2,6-diacetoxynaphthalene 失效
标题翻译：制备2,6-二羟基萘和2,6-二乙酰氧基萘的方法
公开(公告)号：US4814521A
公开(公告)日：1989-03-21
申请号：US89661
申请日：1987-08-26
申请人： Takayuki Tanonaka , Takashi Yamauchi , Hiroyuki Enari , Yutaka Konai
发明人： Takayuki Tanonaka , Takashi Yamauchi , Hiroyuki Enari , Yutaka Konai
IPC分类号： C07C37/08 , C07C37/60 , C07C39/14 , C07C37/01 , C07C41/00 , C07C43/20
CPC分类号： C07C37/08 , C07C37/50
摘要： Disclosed herein is a process for producing 2,6-dihydroxynaphthalene which comprises oxidizing 2,6-di(2-hydroxy-2-propyl)naphthalene in acetonitrile, 1,4-dioxane or a mixture thereof with hydrogen peroxide in the presence of an inorganic acid or a solid acid at a temperture in the range of room temperature to the boiling point of the solution of the 2,6-di(2-hydroxy-2-propyl)naphthalene in acetonitrile or 1,4-dioxane, the acetonitrile, 1,4-dioxane or a mixture thereof being used in an amount of 3 to 30 ml to one gram of the 2,6-di(2-hydroxy-2-propyl)naphthalene.
摘要翻译：本文公开了一种生产2,6-二羟基萘的方法，其包括在乙腈，1,4-二恶烷或其与过氧化氢的混合物中，在二氯甲烷存在下，将2,6-二（2-羟基-2-丙基）无机酸或固体酸在室温至2,6-二（2-羟基-2-丙基）萘在乙腈或1,4-二恶烷溶液中的温度范围内的温度下，乙腈，1,4-二恶烷或其混合物的用量为3至30ml至1克2,6-二（2-羟基-2-丙基）萘。

4. 发明授权

US4681978A Process for producing 2,6-naphthalenedicarboxylic acid 失效
标题翻译： 2,6-萘二甲酸的制备方法
公开(公告)号：US4681978A
公开(公告)日：1987-07-21
申请号：US770249
申请日：1985-08-28
申请人： Takashi Yamauchi , Shoichiro Hayashi , Atsushi Sasakawa
发明人： Takashi Yamauchi , Shoichiro Hayashi , Atsushi Sasakawa
IPC分类号： C07C63/38 , B01J31/00 , C07B61/00 , C07C51/00 , C07C51/265 , C07C67/00
CPC分类号： C07C51/265
摘要： Disclosed herein is a process for producing 2,6-naphthalenedicarboxylic acid, comprising (1) oxidizing 2,6-diisopropylnaphthalene in a lower fatty acid as a solvent in the presence of a catalyst comprising a water-soluble cobalt salt and/or a water-soluble manganese salt in an amount of at least 0.5 gram-atom of Co and/or Mn to 1 mol of 2,6-diisopropylnaphthalene by an oxygen-containing gas, thereby obtaining isopropylnaphthalene-monocarboxylic acid and (2) further oxidizing the thus obtained 6-isopropyl-2-naphthoic acid in the lower fatty acid in the presence of the catalyst comprising a water-soluble cobalt salt and/or a water-soluble manganese salt in an amount of from 0.0025 to 0.12 gram-atom to 1 mol of 6-isopropyl-2-naphthoic acid by the oxygen-containing gas, thereby obtaining 2,6-naphthalenedicarboxylic acid.
摘要翻译：本文公开了2,6-萘二羧酸的制备方法，其包括（1）在含有水溶性钴盐和/或水的催化剂存在下，在低级脂肪酸中作为溶剂氧化2,6-二异丙基萘通过含氧气体将至少0.5克原子的Co和/或Mn与1摩尔的2,6-二异丙基萘的可溶性锰盐混合，得到异丙基萘 - 一元羧酸，（2）进一步氧化在包含水溶性钴盐和/或水溶性锰盐的催化剂存在下，在低级脂肪酸中得到6-异丙基-2-萘甲酸，其量为0.0025至0.12克原子至1摩尔的6-异丙基-2-萘甲酸通过含氧气体反应，得到2,6-萘二甲酸。

5. 发明授权

US4567293A 2-[Para-(2-substituted or unsubstituted-3,3,3-tri-fluoropropyl)phenyl]propionic acid or a salt thereof 失效
标题翻译： 2- [对 - （2-取代或未取代的3,3,3-三氟丙基）苯基]丙酸或其盐
公开(公告)号：US4567293A
公开(公告)日：1986-01-28
申请号：US702861
申请日：1985-02-20
申请人： Yoshiro Kobayashi , Itsumaro Kumadaki , Takashi Yamauchi , Akira Iizuka
发明人： Yoshiro Kobayashi , Itsumaro Kumadaki , Takashi Yamauchi , Akira Iizuka
IPC分类号： C07C45/46 , C07C49/80 , C07C57/58 , C07C57/30 , C07C53/134
CPC分类号： C07C57/58 , C07C45/46 , C07C49/80
摘要： A novel compound of 2-[para-(2-substituted or unsubstituted-3,3,3-trifluoropropyl)phenyl]propionic acid or a salt thereof which has a specific pharmacological activity and a pharmaceutical composition comprising the novel compound as an active ingredient are disclosed.
摘要翻译：具有特定药理活性的2- [对 - （2-取代或未取代的-3,3,3-三氟丙基）苯基]丙酸或其盐的新化合物和包含该新化合物作为活性成分的药物组合物被披露。

6. 发明授权

US08957652B2 Output circuit 有权
标题翻译：输出电路
公开(公告)号：US08957652B2
公开(公告)日：2015-02-17
申请号：US13330031
申请日：2011-12-19
申请人： Takashi Yamauchi
发明人： Takashi Yamauchi
IPC分类号： H02M3/156 , H03K17/082
CPC分类号： H05B33/0887 , H03K17/0822 , H03K2217/0027 , H05B33/0815 , H05B33/089
摘要： There is provided an output circuit for supplying an output current to a load coupled to an output terminal in response to an input signal. The output circuit includes an output transistor for supplying the output current to the output terminal, an output-drive circuit for driving the output transistor, a constant-current limiting circuit for generating a current control signal for limiting the output current to a predetermined current value, and a control circuit for implementing a control such that the output current is controlled on the basis of the current control signal if a voltage at the output terminal is at a predetermined voltage, or less after the input signal is supplied while the output transistor is driven by the output-drive circuit if the voltage at the output terminal is in excess of the predetermined voltage.
摘要翻译：提供了一个输出电路，用于响应于输入信号向耦合到输出端子的负载提供输出电流。输出电路包括用于向输出端子提供输出电流的输出晶体管，用于驱动输出晶体管的输出驱动电路，用于产生用于将输出电流限制到预定电流值的电流控制信号的恒流限制电路以及控制电路，用于实现控制，使得如果输出端子处的电压在输入信号被提供之后输出端子处的电压处于预定电压以下时，则基于电流控制信号控制输出电流，同时输出晶体管为如果输出端子处的电压超过预定电压，则由输出驱动电路驱动。

7. 发明申请

US20130234087A1 NON-VOLATILE RESISTANCE CHANGE DEVICE 审中-公开
标题翻译：非易失性电阻变化器件
公开(公告)号：US20130234087A1
公开(公告)日：2013-09-12
申请号：US13605917
申请日：2012-09-06
申请人： Takashi Yamauchi , Yoshifumi Nishi , Jiezhi Chen , Akira Takashima , Minoru Amano
发明人： Takashi Yamauchi , Yoshifumi Nishi , Jiezhi Chen , Akira Takashima , Minoru Amano
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/1233 , H01L45/148 , H01L45/1675
摘要： A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2  AB
摘要翻译：非易失性电阻变化装置包括由金属元件构成的第一电极，第二电极，形成在第一电极和第二电极之间的可变电阻层，在与可变电阻相反的一侧形成在第一电极上的第一布线层和在与可变电阻层相反的一侧形成在第二电极上的第二布线。如果将第一布线的宽度表示为A（nm），则表示为B（nm）的第二布线的宽度以及表示为L0（nm）的第一电极和第二电极之间的距离，下式为满意：3 2 AB

8. 发明申请

US20100051906A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20100051906A1
公开(公告)日：2010-03-04
申请号：US12549140
申请日：2009-08-27
申请人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
发明人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
IPC分类号： H01L31/0352
CPC分类号： H01L27/14645 , H01L27/14683 , H01L31/0352
摘要： A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.
摘要翻译：提供了用于校正输入信号并输出校正信号的半导体器件。半导体器件包括半导体层，形成在半导体层的一个表面上并用作输入信号的输入端的多个第一导体，第二导体的数量大于第一导体的密度高于在半导体层的另一面形成的第一导体的第一导体的高杂质浓度区域设置在第二导体和半导体层之间的界面的半导体层侧，形成在另一面上的绝缘层，多个第三导体，形成在绝缘层上并用作用于输出处理信号的输出端。

9. 发明申请

US20080230804A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080230804A1
公开(公告)日：2008-09-25
申请号：US12036703
申请日：2008-02-25
申请人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
发明人： Yoshifumi Nishi , Takashi Yamauchi , Yoshinori Tsuchiya , Junji Koga
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/872 , H01L21/283
CPC分类号： H01L29/47 , H01L21/28518 , H01L21/76814 , H01L21/823814 , H01L21/823835 , H01L29/475
摘要： A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal.
摘要翻译：公开了一种半导体器件，其具有即使电子或空穴为多数载流子的具有降低的电接触电阻的电极。该器件在半导体衬底的顶表面中具有n型扩散层和p型扩散层。该装置还具有图案化的第一和第二金属线分别覆盖在n型和p型扩散层之间，介于其间的介电层，用于在n型扩散层和第一金属之间电连接的第一接触电极电线和用于在p型扩散层和第二金属线之间连接的第二接触电极。与n型扩散层接触的第一接触电极部分和与p型扩散层接触的第二接触电极部分分别由包含金属的第一导体和含有稀土金属的第二导体形成。

10. 发明申请

US20080179752A1 Method of making semiconductor device and semiconductor device 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20080179752A1
公开(公告)日：2008-07-31
申请号：US11898295
申请日：2007-09-11
申请人： Takashi Yamauchi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga
发明人： Takashi Yamauchi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga
IPC分类号： H01L29/78 , H01L21/336 , H01L23/48
CPC分类号： H01L29/66795 , H01L21/26513 , H01L21/324 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/47 , H01L29/66507 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/66643 , H01L29/7833 , H01L29/7848 , H01L29/785
摘要： A metal insulator semiconductor field effect transistor (MISFET) having a strained channel region is disclosed. Also disclosed is a method of fabricating a semiconductor device having a low-resistance junction interface. This fabrication method includes the step of forming a gate electrode above a silicon substrate with a gate insulator film being sandwiched therebetween. Then, form a pair of heavily-doped p (p+) type diffusion layers in or on the substrate surface at both sides of the gate electrode to a concentration of 5×1019 atoms/cm3 or more and yet less than or equal to 1×1021 atoms/cm3. Next, silicidize the p+-type layers by reaction with a metal in the state that each layer is applied a compressive strain.
摘要翻译：公开了具有应变通道区域的金属绝缘体半导体场效应晶体管（MISFET）。还公开了一种制造具有低电阻结界面的半导体器件的方法。该制造方法包括在硅衬底上形成栅电极的步骤，其间夹有栅绝缘膜。然后，在栅极两侧的衬底表面中或其上形成一对重掺杂的p（p + SUP +）型扩散层，使其浓度达到5×10 19 原子/ cm 3以上且小于或等于1×10 21原子/ cm 3。接下来，在各层施加压缩应变的状态下，通过与金属反应来硅化p + + +层。

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