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1. 发明授权

US5118952A Patterned photo cathode and its fabrication method for electron image projection 失效
标题翻译：图形照相阴影及其电子图像投影的制作方法
公开(公告)号：US5118952A
公开(公告)日：1992-06-02
申请号：US605008
申请日：1990-10-24
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Jinko Kudou , Akio Yamada
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Jinko Kudou , Akio Yamada
IPC分类号： G03F1/00 , G03F1/20 , H01J1/34 , H01J9/12 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J1/34 , H01J37/3175 , H01J9/12 , H01J2201/3425 , H01J2201/3426 , H01J2237/31779
摘要： A photo cathode used for an electron image projection apparatus has a silver layer as a photo electric material and a layer of an alkali metal or alkaline earth metal, such as cesium, coated on the silver layer. The cesium is as thick as several atomic layers, and reduces the work function of the photo cathode. The silver layer may be coated all over a substrate, and portions other than the cathode may be masked by a non photoelectric metal, or non transparent metal, such as platinum. Or, the silver layer may be patterned on the layer of a non photoelectric metal coated on the substrate. An excitation light to the photo cathode may be irradiated onto the surface of the silver, or onto the back of the silver layer through a transparent substrate. After depositing the cesium layer on the silver, the layers are heated in a vacuum at 50.degree. to 200.degree. C., thus a contrast ratio, i.e. ratio of electron current from the cathode and from the non cathode portion, is achieved as high as 20. This low temperature heat processing prevents lateral diffusion of the mask metal, resulting in a sharp edge of the cathode pattern. Silver and the cesium thereon are not susceptive to open air atmosphere, thus allowing long life and easy handling for an efficient lithography processing. The low absorption edge of the silver allows the use of a high pressure mercury lamp whose light is easily focused by a lens.

2. 发明授权

US4954717A Photoelectron mask and photo cathode image projection method using the same 失效
标题翻译：光电子掩模和光阴极图像投影方法使用相同
公开(公告)号：US4954717A
公开(公告)日：1990-09-04
申请号：US283982
申请日：1988-12-13
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada , Jinko Kudou
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada , Jinko Kudou
IPC分类号： G03F1/00 , G03F7/20 , H01J1/34 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J1/34 , H01J37/3175 , H01J2201/3425 , H01J2237/31779
摘要： A photoelectron mask for photo cathode image projection includes a transparent substrate, and a pattern formed on a main surface of the transparent substrate. The pattern includes a non-transparent material. The mask also includes a photoelectron emission film formed so as to cover the main surface of the transparent substrate on which the pattern is formed. The photoelectron emission film includes a material selected from the group consisting of pure platinum, a platinum-rich material containing platinum as the major component, and a platinum compound.

3. 发明授权

US5029222A Photoelectron image projection apparatus 失效
标题翻译：光电子图像投影仪
公开(公告)号：US5029222A
公开(公告)日：1991-07-02
申请号：US238047
申请日：1988-08-30
申请人： Akio Yamada , Hiroshi Yasuda , Kiichi Sakamoto , Jinko Kudou
发明人： Akio Yamada , Hiroshi Yasuda , Kiichi Sakamoto , Jinko Kudou
IPC分类号： G03F7/26 , G03F9/00 , H01J37/30 , H01L21/32
CPC分类号： G03F9/00 , G03F7/26 , H01J37/30 , H01L21/32 , H01J2237/2817 , H01J2237/31779 , H01J2237/31794
摘要： A photoelectron image projection apparatus has a device for detecting an image of a pattern of a mask within a predetermined projection region of the mask. An image signal describing the detected image is compared with a reference image signal which is known from the pattern of the mask, and a defect in the projection pattern is detected when the two compared image signals differ.

4. 发明授权

US5023462A Photo-cathode image projection apparatus for patterning a semiconductor device 失效
标题翻译：用于图案化半导体器件的光阴图像投影设备
公开(公告)号：US5023462A
公开(公告)日：1991-06-11
申请号：US327728
申请日：1989-03-23
申请人： Akio Yamada , Kiichi Sakamoto , Jinko Kudou , Hiroshi Yasuda
发明人： Akio Yamada , Kiichi Sakamoto , Jinko Kudou , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70375 , G03F7/70725 , H01J37/3175 , H01J2237/0206 , H01J2237/0262 , H01J2237/153 , H01J2237/303 , H01J2237/30455 , H01J2237/31779
摘要： A photo-cathode image projection apparatus includes a light source for producing an optical beam, a photoelectron mask disposed so as to be irradiated by the optical beam and a photoelectron mask patterned according to a desired pattern with a material that emits photoelectrons in response to irradiation by an optical beam. The apparatus also includes a focusing device for focusing the emitted photoelectrons to form a photoelectron beam focused on the object, an acceleration electrode disposed along the path of the photoelectron beam for accelerating the photoelectrons in the beam, an elongated passage defined in the acceleration electrode to permit passage of a part of the photoelectron beam, and a stage disposed for supporting the object in a position such that the focused photoelectron beam is focused on the object. Also included is a voltage source for applying an acceleration voltage between the photoelectron mask and the acceleration electrode. The acceleration electrode is held at an electrical potential level that is identical to the electrical potential level of the stage, so that the object supported on the stage is electrically shielded from the photoelectron mask by the acceleration electrode.

5. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

6. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

7. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

8. 发明授权

US5173582A Charged particle beam lithography system and method 失效
标题翻译：带电粒子束光刻系统及方法
公开(公告)号：US5173582A
公开(公告)日：1992-12-22
申请号：US585777
申请日：1990-09-20
申请人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
发明人： Kiichi Sakamoto , Hiroshi Yasuda , Akio Yamada
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/15 , H01J2237/30411 , H01J2237/31776
摘要： A charged particle beam lithography system includes a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is displaced on the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and an addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask. The addressing system includes an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through a selected one of the plurality of apertures except for the predetermined aperture.
摘要翻译：带电粒子束光刻系统包括带电粒子束的束源，用于向带电粒子束提供预定横截面的光束整形孔;第一聚焦系统，用于将带电粒子束聚焦在位于所述带电粒子束上的第一交越点光轴，设置在第一交叉点和用于将带电粒子束聚焦在位于光轴上的第二交叉点上的物体之间的第二聚焦系统，用于偏转电子束的光束偏转系统，使得光束在物体的表面，用于支撑物体的台，设置在所述第一聚焦系统附近的掩模和用于选择性地偏转带电粒子束的寻址系统，使得带电粒子束穿过掩模上的选定孔径。寻址系统包括用于带电粒子束的可变成形的静电偏转器和用于偏转带电粒子束的电磁偏转器，使得带电粒子束选择性地通过除了预定孔径之外的多个孔中的所选择的孔中。

9. 发明授权

US5130547A Charged-particle beam exposure method and apparatus 失效
标题翻译：充电颗粒光束曝光方法和装置
公开(公告)号：US5130547A
公开(公告)日：1992-07-14
申请号：US616870
申请日：1990-11-21
申请人： Kiichi Sakamoto , Yoshihisa Oae , Shunsuke Fueki , Akio Yamada , Hiroshi Yasuda
发明人： Kiichi Sakamoto , Yoshihisa Oae , Shunsuke Fueki , Akio Yamada , Hiroshi Yasuda
IPC分类号： G05B19/408 , H01J37/302
CPC分类号： H01J37/3026 , G05B19/408 , G05B2219/35567
摘要： A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer. The improvement comprises the steps of (a) holding mask information data, which are information for deflecting the charged particle beam to the selected mask pattern and in which an index is provided every mask pattern of the stencil mask, in a mask memory, (b) holding pattern exposure data, which are information for designating a mask pattern by the use of the index of each mask pattern held in the mask memory and for deflecting the charged particle beam shaped with the designated mask pattern to a predetermined region on the wafer, in a data memory; and (c) deflecting the charged particle beam of the stencil mask and shaping the beam by the use of the mask information data outputted from the mask memory in response to the index designated in the pattern exposure data.

10. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

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