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1. 发明授权

US5086332A Planar semiconductor device having high breakdown voltage 失效
标题翻译：具有高击穿电压的平面半导体器件
公开(公告)号：US5086332A
公开(公告)日：1992-02-04
申请号：US415400
申请日：1989-09-27
申请人： Akio Nakagawa , Kiminori Watanabe , Yutaka Koshino , Yoshihiro Yamaguchi , Yoshiro Baba
发明人： Akio Nakagawa , Kiminori Watanabe , Yutaka Koshino , Yoshihiro Yamaguchi , Yoshiro Baba
IPC分类号： H01L29/06 , H01L29/40 , H01L29/78 , H01L29/861
CPC分类号： H01L29/405 , H01L29/0615 , H01L29/408 , H01L29/66659 , H01L29/7835 , H01L29/8611 , H01L29/0692 , H01L29/0847 , H01L29/1045 , H01L29/41758
摘要： A planar semiconductor device having a high breakdown voltage includes a semiconductor layer of a first conductivity type and a first semiconductor region of a second conductivity type selectively formed, together with the semiconductor layer, in the surface of the semiconductor layer forming a pn junction. The first semiconductor region is formed to have an impurity concentration higher than that of the semiconductor layer and therefore a resistivity higher than that of the semiconductor layer. A second semiconductor region of the second conductivity type having an impurity concentration lower than that of the first semiconductor region, is formed around and in contact with the first semiconductor region and together with the semiconductor layer constitutes a pn junction. A high resistance film is formed at least over the first semiconductor region and the second semiconductor region. A voltage is applied across the high resistance film to create a uniform electric field in the high resistance film.
摘要翻译：具有高击穿电压的平面半导体器件包括在形成pn结的半导体层的表面中选择性地与半导体层一起形成第一导电类型的半导体层和第二导电类型的第一半导体区域。第一半导体区域形成为具有比半导体层高的杂质浓度，因此电阻率高于半导体层的电阻率。具有低于第一半导体区域的杂质浓度的第二导电类型的第二半导体区域形成在第一半导体区域周围并与第一半导体区域接触，并与半导体层一起构成pn结。至少在第一半导体区域和第二半导体区域上形成高电阻膜。在高电阻膜上施加电压以在高电阻膜中产生均匀的电场。

2. 发明授权

US5780887A Conductivity modulated MOSFET 失效
公开(公告)号：US5780887A
公开(公告)日：1998-07-14
申请号：US261254
申请日：1994-06-14
申请人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
发明人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0696 , H01L29/7393 , H01L29/7395
摘要： A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.

3. 发明授权

US5463231A Method of operating thyristor with insulated gates 失效
公开(公告)号：US5463231A
公开(公告)日：1995-10-31
申请号：US353385
申请日：1994-12-02
申请人： Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
发明人： Tsuneo Ogura , Kiminori Watanabe , Akio Nakagawa , Yoshihiro Yamaguchi , Norio Yasuhara , Tomoko Matsudai , Shigeru Hasegawa , Kazuya Nakayama
IPC分类号： H01L27/06 , H01L29/74 , H01L29/745 , H01L29/749 , H01L31/111
CPC分类号： H01L27/0617 , H01L29/7436 , H01L29/7455 , H01L29/749
摘要： A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source layers formed in a p-type base layer, and a turn-off gate extending over the drain and source layers. The n-type drain layer is short-circuited with the p-type base layer via a drain electrode. The drain electrode is formed near an n-type emitter layer. When the thyristor is to be turned off, the first voltage is applied to the turn-on gate, and the second voltage is applied to the turn-off gate while the first voltage is applied to the turn-on gate. After the application of the second voltage continues for a predetermined period of time, the application of the first voltage to the turn-on gate is stopped. With this operation, the thyristor can be turned off even with a large current.

4. 发明授权

US5124773A Conductivity-modulation metal oxide semiconductor field effect transistor 失效
标题翻译：电导率调制金属氧化物半导体场效应晶体管
公开(公告)号：US5124773A
公开(公告)日：1992-06-23
申请号：US563720
申请日：1990-08-07
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/745
CPC分类号： H01L29/405 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7455
摘要： A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the N base. A source electrode electrically conducts the P base and the source. A first gate electrode insulatively covers a channel region defined by the N.sup.+ source layer in the P base. A P drain layer is formed on an opposite substrate surface. An N.sup.+ second source layer is formed in a P type drain layer by diffusion to define a second channel region. A second gate electrode insulatively covers the second channel region, thus providing a voltage-controlled turn-off controlling transistor. A drain electrode of the MOSFET conducts the P type drain and second source. When the turn-off controlling transistor is rendered conductive to turn off the MOSFET a "shorted anode structure" is temporarily formed wherein the N type base is short-circuited to the drain electrode, whereby case, the flow of carriers accumulated in the N type base into the drain electrode is facilitated to accelerate dispersion of carriers upon turn-off of the transistor.
摘要翻译：导电调制型MOSFET采用N型导电性基板作为N基极。在形成在N基底中的P基底层中形成重掺杂N型导电性的第一源极层。源极电极导电P基极和源极。第一栅极绝缘地覆盖由P基底中的N +源层限定的沟道区域。在相对的基板表面上形成P漏极层。通过扩散在P型漏极层中形成N +第二源极层，以限定第二沟道区。第二栅电极绝缘地覆盖第二沟道区，从而提供电压控制关断控制晶体管。 MOSFET的漏电极导通P型漏极和第二源极。当关断控制晶体管导通以关断MOSFET时，暂时形成“短路阳极结构”，其中N型基极短路到漏极，由此情况下，累积在N型的载流子有助于在晶体管截止时加速载流子的分散。

5. 发明授权

US5105243A Conductivity-modulation metal oxide field effect transistor with single gate structure 失效
标题翻译：具有单栅极结构的电导率调制金属氧化物场效应晶体管
公开(公告)号：US5105243A
公开(公告)日：1992-04-14
申请号：US399342
申请日：1989-08-25
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739
CPC分类号： H01L29/7396 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/405 , H01L29/7393 , H01L29/7395
摘要： There is disclosed a single-gate type conductivity-modulation field effect transistor having a first base layer, a second base layer, and a source layer formed in the second base layer. A source electrode is provided on a surface of the first base layer, for electrically shorting the second base layer with the source layer. A drain layer is provided in the first base layer surface. A drain electrode is formed on the layer surface to be in contact with the drain layer. A gate electrode is insulatively provided above the layer surface, for covering a certain surface portion of the second base layer which is positioned between the first base layer and the source layer to define a channel region below the gate electrode. A heavily-doped semiconductor layer is formed in the drain layer to have the opposite conductivity type to that of the drain layer. This semiconductor layer is in contact with the drain electrode. When the transistor is turned off, this layer facilitates carriers accumulated in the first base layer to flow into the drain electrode through the drain layer, thereby accelerating dispersion of the carriers in said transistor.
摘要翻译：公开了具有形成在第二基极层中的第一基极层，第二基极层和源极层的单栅极型导电调制场效应晶体管。源极电极设置在第一基极层的表面上，用于使第二基极层与源极层电气短路。在第一基层表面设置漏极层。漏极电极形成在层表面上以与漏极层接触。栅极电极被绝缘地设置在层表面之上，用于覆盖位于第一基极层和源极层之间的第二基极层的特定表面部分，以限定栅电极下方的沟道区。在漏极层中形成重掺杂的半导体层，以具有与漏极层相反的导电类型。该半导体层与漏电极接触。当晶体管截止时，该层便于积聚在第一基极层中的载流子通过漏极层流入漏电极，从而加速载流子在所述晶体管中的分散。

6. 发明授权

US5093701A Conductivity modulated MOSFET 失效
公开(公告)号：US5093701A
公开(公告)日：1992-03-03
申请号：US146405
申请日：1988-01-21
申请人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
发明人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0696 , H01L29/7393 , H01L29/7395
摘要： A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.

7. 发明授权

US5068700A Lateral conductivity modulated MOSFET 失效
标题翻译：横向电导调制MOSFET
公开(公告)号：US5068700A
公开(公告)日：1991-11-26
申请号：US622351
申请日：1990-11-29
申请人： Yoshihiro Yamaguchi , Kiminori Watanabe , Akio Nakagawa
发明人： Yoshihiro Yamaguchi , Kiminori Watanabe , Akio Nakagawa
IPC分类号： H01L29/06 , H01L29/08 , H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834 , H01L29/7393
摘要： A lateral conductivity modulated MOSFET comprises a semiconductor wafer, a first-conductivity type base layer selectively formed in a surface region of the semiconductor wafer, a second-conductivity type source layer selectively formed in a surface region of the first-conductivity type base layer, a second-conductivity type base layer selectively formed in the semiconductor wafer, a first-conductivity type drain layer formed in a surface region of the second-conductivity type base layer, a gate insulation film formed on that surface portion of the first-conductivity type base layer which is sandwiched between the source layer and the second-conductivity type base layer, a gate electrode formed on the gate insulation film, a source electrode in contact with both the source layer and the first-conductivity type base layer, and a drain electrode in contact with the drain layer. A second-conductivity type cathode layer is formed in a surface region of the semiconductor wafer in such a manner that it is located adjacent to the second-conductivity type base layer. A cathode electrode is in contact with the cathode layer and is kept at the same potential level as that of the drain electrode.

8. 发明授权

US5237186A Conductivity-modulation metal oxide field effect transistor with single gate structure 失效
标题翻译：具有单栅极结构的电导率调制金属氧化物场效应晶体管
公开(公告)号：US5237186A
公开(公告)日：1993-08-17
申请号：US823834
申请日：1992-01-21
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/745
CPC分类号： H01L29/7455 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/405 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L2924/0002
摘要： There is disclosed a single-gate type conductivity-modulation field effect transistor having a semiconductive substrate, a base layer, and a source layer formed in the base layer. A source electrode is provided on a surface of the substrate, for electrically shorting the base layer with the source layer. A drain layer is provided in the substrate surface. A drain electrode is formed on the substrate surface to be in contact with the drain layer. A gate electrode is insulatively provided above the substrate surface, for covering a certain surface portion of the base layer which is positioned between the substrate and the source layer to define a channel region below the gate electrode. A lightly doped semiconductor diffusion layer is formed in the substrate surface so as to overlap said base layer and said drain layer. The diffusion layer having an impurity density which is varied continuously through the thickness of the diffusion layer.
摘要翻译：公开了具有形成在基底层中的半导体基底，基底层和源极层的单栅极型导电调制场效应晶体管。源电极设置在基板的表面上，用于使源层与源层电短路。漏极层设置在衬底表面中。漏极电极形成在衬底表面上以与漏层接触。栅极电极被绝缘地设置在衬底表面上方，用于覆盖位于衬底和源极层之间的基底层的特定表面部分，以限定栅电极下方的沟道区。在衬底表面中形成轻掺杂的半导体扩散层，以便与所述基底层和所述漏极层重叠。扩散层的杂质密度通过扩散层的厚度连续变化。

9. 发明授权

US5168333A Conductivity-modulation metal oxide semiconductor field effect transistor 失效
标题翻译：电导率调制金属氧化物半导体场效应晶体管
公开(公告)号：US5168333A
公开(公告)日：1992-12-01
申请号：US662517
申请日：1991-02-28
申请人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
发明人： Akio Nakagawa , Yoshihiro Yamaguchi , Kiminori Watanabe
IPC分类号： H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/745
CPC分类号： H01L29/405 , H01L29/0696 , H01L29/0834 , H01L29/402 , H01L29/7393 , H01L29/7395 , H01L29/7396 , H01L29/7455
摘要： A semiconductor device including a semiconductive substrate having first and second opposite surfaces; a thyristor formed on the substrate and including a base layer formed in the first surface of the substrate, a first emitter layer formed in the base layer, a conductive layer electrically connected to the emitter layer to serve as a cathode electrode, a first gate electrode connected to the base layer, a second emitter layer formed in the second surface of the substrate, a drain layer formed in the second emitter layer, a conductive layer for electrically connecting the second emitter layer with said drain layer and for serving as an anode electrode of said thyristor. A metal oxide semiconductor field effect transistor is provided to accelerate the flow of carriers in said thyristor to the anode electrode to turn off said thyristor. The metal oxide semiconductor field effect transistor has a conductive layer serving as a second gate electrode insulatively disposed above the second surface to cover a layer portion of the second emitter layer which is defined between the substrate and the drain layer.
摘要翻译：一种半导体器件，包括具有第一和第二相对表面的半导体衬底; 形成在基板上的晶闸管，包括形成在基板的第一表面中的基底层，在基底层中形成的第一发射极层，与发射极层电连接以用作阴极的导电层，第一栅电极连接到基极层，形成在基板的第二表面中的第二发射极层，形成在第二发射极层中的漏极层，用于将第二发射极层与所述漏极层电连接并用作阳极电极的导电层的晶闸管。提供金属氧化物半导体场效应晶体管，以加速所述晶闸管中的载流子流向阳极电极，以使所述晶闸管截止。金属氧化物半导体场效应晶体管具有绝缘地设置在第二表面之上的第二栅电极的导电层，以覆盖限定在衬底和漏层之间的第二发射极层的层部分。

10. 发明授权

US4928155A Lateral conductivity modulated MOSFET 失效
标题翻译：横向电导率调制MOSFET
公开(公告)号：US4928155A
公开(公告)日：1990-05-22
申请号：US205365
申请日：1988-06-10
申请人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
发明人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0696 , H01L29/7393 , H01L29/7395
摘要： A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.

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