会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Method of washing secondary filter in process for filtering plasma
    • 在过滤等离子体过程中清洗二次过滤器的方法
    • US5516431A
    • 1996-05-14
    • US302774
    • 1994-09-19
    • Akio KawamuraMotoki YonekawaOsamu KanekoHiroshi Kamogawa
    • Akio KawamuraMotoki YonekawaOsamu KanekoHiroshi Kamogawa
    • A61M1/02A61M1/34B01D11/00B01D61/00C02F1/44
    • A61M1/3472A61M1/02A61M1/3482A61M2205/707A61M2205/7554
    • In a plasma filtration process including a treatment with a primary filter for separating blood into blood cells and plasma and a treatment with a secondary filter for removing harmful macromolecules from the separated plasma for purification, the secondary filter is washed by passing a washing liquid through an inner chamber of the filter, an outer chamber thereof or both the chambers in an amount corresponding to 5 to 50% of the priming volume of the filter every time the filtration pressure has reached 70 to 100% of the withstanding pressure of the secondary filter. This washing procedure reduces the time required for the filtration of plasma to about 60 to 70% of the time conventionally needed, shortens the patient restraining time, and decreases the amount of washing liquid to be used to consequently diminish the disposal loss of plasma from the system.
    • PCT No.PCT / JP94 / 00085 Sec。 371日期1994年9月19日 102(e)1994年9月19日PCT 1994年1月21日PCT PCT。 公开号WO94 / 16751 日期为1905年8月4日。在等离子体过滤方法中,包括用初级过滤器将血液分离成血细胞和血浆,并用二级过滤器处理,从分离的血浆中除去有害的大分子以进行纯化,将二次过滤器洗涤 通过将过滤器的内部室,其外部室或两个室中的洗涤液通过,每当过滤压力达到过滤压力的70%至100%时,其量相当于过滤器的起动体积的5%至50% 二级过滤器承受压力。 这种洗涤方法将血浆过滤所需的时间减少到常规需要时间的约60-70%,缩短了患者的约束时间,并减少了使用的洗涤液的量,从而减少了等离子体的处置损失 系统。
    • 3. 发明授权
    • Display circuit which automatically deciphers different video formats
and optimizes the horizontal and vertical centering of the image on the
display
    • 显示电路,自动解码不同的视频格式,并优化图像在显示屏上的水平和垂直居中
    • US5859626A
    • 1999-01-12
    • US604746
    • 1996-02-23
    • Akio Kawamura
    • Akio Kawamura
    • G02F1/133G09G3/20G09G3/36G09G5/00H04N3/27H04N5/46
    • G09G5/008G09G5/005H04N3/27G09G2340/0421G09G2340/0471G09G2340/0478G09G2340/0485G09G5/006H04N5/46
    • A display device that is automatically operable with various types of standards of video signals has a display panel, a controller, and a timing generator. The display panel includes pixels arranged in the form of a matrix to form an image. The display panel also contains a built-in vertical scanning circuit that is operable in response to input timing signals and sequentially selects the respective rows of the pixels. Additionally, the display panel contains a built-in horizontal scanning circuit that is operable in response to input timing signals and distributes the various types of standards of the video signals provided from the exterior to the selected rows of the pixels, thereby displaying the image. The controller deciphers the standard of the video signal provided from the exterior and automatically supplies the adjustment information required for optimizing the picture. The timing generator generates the timing signals in accordance with the adjustment information and inputs them into the display panel, whereby the image that has been optimally adjusted based on the standard of the video signal is displayed.
    • 可以利用各种类型的视频信号标准自动操作的显示装置具有显示面板,控制器和定时发生器。 显示面板包括以矩阵形式布置以形成图像的像素。 显示面板还包括内置垂直扫描电路,其可响应于输入定时信号而可操作并顺序地选择像素的相应行。 此外,显示面板包含内置水平扫描电路,其可响应于输入定时信号而操作,并将从外部提供的视频信号的各种类型的标准分配给所选择的像素行,从而显示图像。 控制器解码从外部提供的视频信号的标准,并自动提供优化图像所需的调整信息。 定时发生器根据调整信息生成定时信号并将其输入显示面板,由此显示基于视频信号的标准被最佳调整的图像。
    • 7. 发明授权
    • Method for forming a semiconductor device isolation region
    • 形成半导体器件隔离区的方法
    • US5173444A
    • 1992-12-22
    • US760131
    • 1991-09-16
    • Akio Kawamura
    • Akio Kawamura
    • H01L21/76H01L21/316H01L21/32H01L21/762
    • H01L21/32H01L21/76205
    • A method for forming a semiconductor device isolation region including steps of forming a first silicon oxide film on a silicon substrate, depositing a first silicon nitride film over the first silicon oxide film, and removing the first silicon oxide film and first silicon nitride film in a device isolation region by using a resist pattern, which is formed by a one-time photolithographic step, as a mask so as to expose the surface of the silicon substrate, removing the resist pattern, and oxidizing the exposed surface of the silicon substrate so as to form a second silicon oxide film having a smaller thickness than the first silicon oxide film and to deposit a second silicon nitride film, removing the second silicon nitride film by anisotropic etching until the second silicon oxide film is exposed in the device isolation region so as to make the second silicon nitride film remain as the side wall portion of the silicon nitride film in only the opening side wall portion of the first silicon nitride film, etching the second silicon oxide film in the opening of the first silicon nitride film on a self-aligning basis by using as etching masks the first silicon nitride film and the side wall portion of the second silicon nitride film remaining on the opening side wall portion of the first silicon nitride film, and selectively carrying out oxidation so as to form a thick silicon oxide film in the device isolation region.
    • 9. 发明授权
    • No-needle blood access device for hemodialysis
    • 用于血液透析的无针入血装置
    • US06524273B2
    • 2003-02-25
    • US09851326
    • 2001-05-09
    • Akio Kawamura
    • Akio Kawamura
    • A61M3700
    • A61M39/0247A61M1/3655A61M2039/0258A61M2039/0264
    • A no-needle blood access device for hemodialysis including a cylindrical external body (20), the lower portion of the external body being provided with openings (28) at diametrically facing locations. Pipe members (30) are mounted in the respective openings. First and second artificial conduits (12, 14) are fitted into the respective pipe member, each of the artificial conduits being anastomosed to a targeted artery or vein; and a columnar internal body (40) fitted into the external body so as to be rotated in the external body. The device is arranged such that, when the internal body is rotated so that a first through-hole (42) communicates with the openings (28), the first artificial conduit (12) is in communication with the second artificial conduit (14) through the first through-hole (42), and when the internal body is rotated so that a first position (44) mates with one of the openings and a third position (50) mates with the other of the openings, a second through-hole is in communication with the first artificial conduit (12) and the third through-hole is in communication with the second artificial conduit (14).
    • 一种用于血液透析的无针血液进入装置,包括圆柱形外体(20),外部本体的下部在直径方向的位置设有开口(28)。 管件(30)安装在相应的开口中。 将第一和第二人造管道(12,14)装配到相应的管件中,每个人造管道与目标动脉或静脉吻合; 以及嵌合到所述外部主体中以在所述外部主体中旋转的柱状内部主体(40)。 所述装置被布置成使得当所述内部主体旋转以使得第一通孔(42)与所述开口(28)连通时,所述第一人造管道(12)与所述第二人造管道(14)连通 第一通孔(42),并且当内体旋转使得第一位置(44)与其中一个开口相配合,并且第三位置(50)与另一个开口配合时,第二通孔 与第一人造管道(12)连通,第三通孔与第二人造管道(14)连通。
    • 10. 发明授权
    • Method for electrically connecting an electrode and impurity-diffused
layer formed on a semiconductor substrate
    • 用于电连接形成在半导体衬底上的电极和杂质扩散层的方法
    • US5278082A
    • 1994-01-11
    • US36621
    • 1993-03-24
    • Akio Kawamura
    • Akio Kawamura
    • H01L21/336H01L21/8244H01L27/11H01L29/78H01L21/265
    • H01L27/11Y10S257/903Y10S438/965
    • A method for producing a semiconductor device in which an electrode and an impurity-diffused layer formed on a semiconductor substrate are electrically connected to each other, includes the following steps: forming a first insulating film on the semiconductor substrate; forming a first mask layer on the first insulating film, and forming a second mask layer on the first mask layer, the first mask layer comprising a first opening for exposing a part of the surface of the semiconductor substrate, the second mask layer comprising a second opening, at least the exposed part of the surface of the semiconductor substrate being exposed by the second opening; removing at least a part of the first insulating film exposed through the first opening; implanting a first impurity into the semiconductor substrate using the second mask layer as a mask and employing an acceleration energy at which the first impurity can pass through the first mask layer; removing the second mask layer, and forming the electrode doped with a second impurity so as to entirely cover the first opening; implanting a third impurity into the semiconductor substrate using the electrode as a mask; and activating the first impurity and the third impurity by annealing the semiconductor substrate, and diffusing the second impurity from the electrode to the semiconductor substrate by annealing the semiconductor substrate by annealing the semiconductor substrate, thereby forming the impurity-diffused layer.
    • 其中形成在半导体衬底上的电极和杂质扩散层彼此电连接的半导体器件的制造方法包括以下步骤:在半导体衬底上形成第一绝缘膜; 在所述第一绝缘膜上形成第一掩模层,以及在所述第一掩模层上形成第二掩模层,所述第一掩模层包括用于暴露所述半导体衬底的一部分表面的第一开口,所述第二掩模层包括第二掩模层, 至少所述半导体衬底的所述表面的暴露部分被所述第二开口暴露; 去除通过所述第一开口暴露的所述第一绝缘膜的至少一部分; 使用所述第二掩模层作为掩模将第一杂质注入到所述半导体衬底中,并采用所述第一杂质可以通过所述第一掩模层的加速能; 去除所述第二掩模层,以及形成掺杂有第二杂质的电极,以便完全覆盖所述第一开口; 使用所述电极作为掩模将第三杂质注入所述半导体衬底; 以及通过退火所述半导体衬底来激活所述第一杂质和所述第三杂质,以及通过使所述半导体衬底退火来使所述半导体衬底退火从而将所述第二杂质从所述电极扩散到所述半导体衬底,从而形成所述杂质扩散层。