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2. 发明申请

US20100177231A1 SOLID-STATE IMAGE CAPTURING APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC INFORMATION DEVICE 审中-公开
标题翻译：固态图像拍摄装置，其制造方法和电子信息装置
公开(公告)号：US20100177231A1
公开(公告)日：2010-07-15
申请号：US12516448
申请日：2007-11-21
申请人： Takahiro Tsuchida
发明人： Takahiro Tsuchida
IPC分类号： H04N5/335 , H01L31/14 , H01L31/18 , H01L31/0248
CPC分类号： H01L27/14632 , H01L27/1462 , H01L27/1463 , H01L27/1464 , H01L27/14647 , H01L27/14687
摘要： A solid-state image capturing apparatus is manufactured, which has a high sensitivity and high resolution with no color filter or no on-chip microlens required and with no shading generated or no variance in performance between pixel sections. In a solid-state image capturing apparatus 1, a plurality of pixel sections 2 (solid-state image capturing devices), each having light receiving sections 21 to 23 laminated in a depth direction of a semiconductor substrate 3, is repeatedly arranged according to a sequence in a direction along a plane of the semiconductor substrate 3. For incident light, electromagnetic waves having wavelength bands corresponding to the depths of the respective light receiving sections 21 to 23 are detected at the light receiving sections 21 to 23 in accordance with the wavelength dependency of optical absorption coefficient of semiconductor substrate material, and signal charges are generated. The pixel sections 2 are electrically separated from each other by pixel separation section diffusion layers 4. Wiring layers 71 to 73, which forms transfer paths for transferring signal charges from the light receiving sections 21 to 23, and the required number of transistors 5 are provided on the surface of the semiconductor substrate 3, which is the opposite side of the electromagnetic wave incidence side.
摘要翻译：制造了具有高灵敏度和高分辨率的固态图像捕获设备，其不需要滤色器或不需要片上微透镜，并且不产生阴影，或者在像素部分之间没有性能变化。在固体摄像装置1中，根据半导体基板3的深度方向层叠有各自具有层叠的受光部21〜23的多个像素部2（固体摄像装置），根据沿着半导体衬底3的平面的方向顺序。对于入射光，根据波长的光接收部分21至23检测具有与各个光接收部分21至23的深度相对应的波长带的电磁波产生半导体衬底材料的光吸收系数的依赖性和信号电荷。像素部分2通过像素分离部分扩散层4彼此电分离。提供形成用于从光接收部分21至23传送信号电荷的传输路径和所需数量的晶体管5的接线层71至73 在作为电磁波入射侧的相对侧的半导体基板3的表面上。

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