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1. 发明授权

US06337060B1 Hydrophilic diamond particles and method of producing the same 失效
标题翻译：亲水性金刚石颗粒及其制备方法
公开(公告)号：US06337060B1
公开(公告)日：2002-01-08
申请号：US08662022
申请日：1996-06-12
申请人： Akio Hiraki , Toshimichi Ito , Akimitsu Hatta , Hiroshi Makita , Kazuhito Nishimura , Hiroshi Ishizuka , Satoru Hosomi
发明人： Akio Hiraki , Toshimichi Ito , Akimitsu Hatta , Hiroshi Makita , Kazuhito Nishimura , Hiroshi Ishizuka , Satoru Hosomi
IPC分类号： C01B3106
CPC分类号： C01B32/28
摘要： The principal objects of the invention is to provide diamond fine particles with a surface nature so improved as to form a stable, uniform suspension or dispersion in a common medium such as water and alcohol. Another object is to provide an effective technique for producing hydrophilic diamond fine particles by chemically modifying the particle surface nature, while removing at the same time contaminants and foreign materials which coexist with the diamond. In the invention, diamond particles are treated by boiling in the treatment fluid of sulfuric acid solution, which is in particular of concentrated or fuming nature, at a temperature more than 200° C., which is preferably 250° C. or more.
摘要翻译：本发明的主要目的是提供具有如此改进的表面性质的金刚石细颗粒，以在普通介质如水和醇中形成稳定的均匀悬浮液或分散体。另一个目的是提供通过化学改性颗粒表面性质同时同时除去与金刚石共存的污染物和异物来生产亲水性金刚石细颗粒的有效技术。在本发明中，金属颗粒在温度超过200℃，优选为250℃以上的温度下，在特别浓缩或发烟性质的硫酸溶液的处理液中沸腾处理。

2. 发明授权

US5510157A Method of producing diamond of controlled quality 失效
标题翻译：生产控制质量钻石的方法
公开(公告)号：US5510157A
公开(公告)日：1996-04-23
申请号：US789441
申请日：1991-11-06
申请人： Chia-Fu Chen , Kazuhito Nishimura , Ensei Ko , Hiroshi Ishizuka , Satoru Hosomi
发明人： Chia-Fu Chen , Kazuhito Nishimura , Ensei Ko , Hiroshi Ishizuka , Satoru Hosomi
IPC分类号： C01B31/06 , C23C16/27 , C23C16/52
CPC分类号： C23C16/27 , C01B31/06 , C23C16/278 , C23C16/279 , C23C16/52
摘要： Making a diamond substance exhibiting a cathodoluminescence spectrum with the peak at a photon energy greater than 2.8 eV (electron volt), the half-value and 20%-value width not exceeding 0.5 eV and 0.8 eV, respectively, comprising: providing a substrate in a closed chamber, introducing a matrix gas comprising H.sub.2 and one selected from hydrocarbon and CO to said chamber, exciting the gas to create a plasma while heating said substrate to a temperature of at least 700.degree. C. and, thus, causing deposition and growth of diamond substance which is crystallographically diamond, controlling parameters of the deposition by means of the cathodoluminescence record and recovering the diamond substance from the chamber.
摘要翻译：制备具有阴极发光光谱的金刚石物质，其光子能量大于2.8eV（电子伏特）的峰值，半值和20％值的宽度分别不超过0.5eV和0.8eV，包括：提供基底封闭的室，将包含H 2和选自烃和CO的一种基质气体引入所述室，激发气体以产生等离子体，同时将所述衬底加热到至少700℃的温度，从而引起沉积和生长通过阴极发光记录控制沉积参数，并从室中回收金刚石物质。

3. 发明授权

US5882740A Method of producing diamond of controlled quality and product produced thereby 失效
标题翻译：生产受控质量的金刚石的方法和由此生产的产品
公开(公告)号：US5882740A
公开(公告)日：1999-03-16
申请号：US627320
申请日：1996-04-01
申请人： Chia-Fu Chen , Kazuhito Nishimura , Ensei Ko , Hiroshi Ishizuka , Satoru Hosomi
发明人： Chia-Fu Chen , Kazuhito Nishimura , Ensei Ko , Hiroshi Ishizuka , Satoru Hosomi
IPC分类号： C01B31/06 , C23C16/27 , C23C16/52
CPC分类号： C23C16/27 , C01B31/06 , C23C16/278 , C23C16/279 , C23C16/52
摘要： A method is provided for efficiently producing an entirely quality-controlled CVD diamond. A CVD process is interrupted at an early stage and the deposit is taken out of the reaction chamber, before a significant mass is accumulated, and is inspected by means of cathodoluminescence. The spectrum are compared with a given reference in terms of peak position, half width and 20%-value width in coordination. The observed deviation allows to determine whether to maintain or alter the settings.A diamond substance of acceptable quality which is properly specified in terms of the CL parameters is also provided.
摘要翻译：提供了一种有效地生产完全质量控制的CVD金刚石的方法。 CVD过程在早期中断，并且在积累显着质量之前将沉积物从反应室中取出，并通过阴极发光进行检查。将频谱与峰值位置，半宽度和20％值宽度协调的给定参考值进行比较。观察到的偏差允许确定是否维护或更改设置。还提供了根据CL参数适当指定的可接受质量的钻石物质。

4. 发明申请

US20130230715A1 SUBSTRATE FOR CVD DEPOSITION OF DIAMOND AND METHOD FOR THE PREPARATION THEREOF 有权
标题翻译：用于金刚石沉积的基材及其制备方法
公开(公告)号：US20130230715A1
公开(公告)日：2013-09-05
申请号：US13884369
申请日：2010-11-09
申请人： Evgeny A. Levashov , Ekaterina V. Azarova , Victor G. Ralchenko , Andrey Bol'Shakov , Evgeny E. Ashkinazi , Hiroshi Ishizuka , Satoru Hosomi
发明人： Evgeny A. Levashov , Ekaterina V. Azarova , Victor G. Ralchenko , Andrey Bol'Shakov , Evgeny E. Ashkinazi , Hiroshi Ishizuka , Satoru Hosomi
IPC分类号： C23C4/10 , C23C4/12
CPC分类号： C23C4/131 , C23C4/067 , C23C4/10 , C23C4/18 , C23C10/28 , C23C16/0272 , C23C16/271 , Y10T428/25
摘要： A substrate for depositing diamond by CVD, comprising a base body of hard material and a coating layer that holds diamond particles as seed crystal in a matrix and is deposited joined thereto on a surface of said base body, wherein: the seed diamond particles have an average particle size of 1 μm or smaller; the matrix comprises a first metal selected from a first group of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or a first compound between said first metal and a non-metallic substance selected from boron, carbon and nitrogen, said matrix holding the diamond particles distributed therein; and a joint zone developed as a result of a diffusion process and extending over said base body and coating layer comprises either or both atoms of said first metal and a component metal of the hard material.
摘要翻译： 1.一种用于通过CVD沉积金刚石的基底，包括硬质材料的基体和将金刚石颗粒作为晶种保持在基体中并在其上沉积在所述基体的表面上的涂层，其中：所述种子金刚石颗粒具有平均粒径为1um或更小; 所述基体包括选自第一组Si，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和W中的第一金属和/或所述第一金属和选自硼的非金属物质之间的第一化合物，碳和氮，所述基质保持分布在其中的金刚石颗粒; 并且由于扩散过程而开发并且在所述基体和涂层之上延伸的接合区包括所述第一金属的任一原子或两者的原子和硬材料的组分金属。

5. 发明授权

US09663851B2 Substrate for CVD deposition of diamond and method for the preparation thereof 有权
公开(公告)号：US09663851B2
公开(公告)日：2017-05-30
申请号：US13884369
申请日：2010-11-09
申请人： Evgeny A. Levashov , Ekaterina V. Azarova , Victor G. Ralchenko , Andrey Bol'Shakov , Evgeny E. Ashkinazi , Hiroshi Ishizuka , Satoru Hosomi
发明人： Evgeny A. Levashov , Ekaterina V. Azarova , Victor G. Ralchenko , Andrey Bol'Shakov , Evgeny E. Ashkinazi , Hiroshi Ishizuka , Satoru Hosomi
IPC分类号： C23C4/12 , C23C4/06 , C23C16/27 , C23C4/131 , C23C10/28 , C23C16/02 , C23C4/10 , C23C4/18 , C23C4/067
CPC分类号： C23C4/131 , C23C4/067 , C23C4/10 , C23C4/18 , C23C10/28 , C23C16/0272 , C23C16/271 , Y10T428/25
摘要： A substrate for depositing diamond by CVD, comprising a base body of hard material and a coating layer that holds diamond particles as seed crystal in a matrix and is deposited joined thereto on a surface of said base body, wherein: the seed diamond particles have an average particle size of 1 μm or smaller; the matrix comprises a first metal selected from a first group of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or a first compound between said first metal and a non-metallic substance selected from boron, carbon and nitrogen, said matrix holding the diamond particles distributed therein; and a joint zone developed as a result of a diffusion process and extending over said base body and coating layer comprises either or both atoms of said first metal and a component metal of the hard material.

6. 发明授权

US5061292A Diamond abrasive and method for producing the same 失效
标题翻译：金刚石磨料及其制造方法
公开(公告)号：US5061292A
公开(公告)日：1991-10-29
申请号：US379219
申请日：1989-07-13
申请人： Chia-Fu Chen , Ensei Ko , Hiroshi Ishizuka , Satoru Hosomi
发明人： Chia-Fu Chen , Ensei Ko , Hiroshi Ishizuka , Satoru Hosomi
IPC分类号： B24D3/00 , C01B31/06 , C09K3/14 , C23C16/26
CPC分类号： C23C16/26 , B24D3/005 , B24D3/007 , C09K3/1436
摘要： Diamond abrasive comprising a mass of idiomorphic crystal grits which each have an irregular shaped core of diamond formed under pressure where diamond is thermodynamically favored phase, and a growth layer of diamond and/or diamond-like carbon formed over said core by chemical vapor deposition.
摘要翻译：金刚石研磨剂包括大量的同晶晶粒，每个具有金刚石在热力学上有利相的金刚石形成的不规则形状的金刚石芯，以及通过化学气相沉积在所述芯上形成的金刚石和/或类金刚石碳的生长层。

7. 发明授权

US06365299B1 Nonaqueous secondary battery 失效
标题翻译：非水二次电池
公开(公告)号：US06365299B1
公开(公告)日：2002-04-02
申请号：US08981011
申请日：1997-12-24
申请人： Yukio Miyaki , Masuo Kabutomori , Noriyuki Inoue , Hiroshi Ishizuka , Toshiaki Aono , Mikihiko Kato , Hideki Tomiyama
发明人： Yukio Miyaki , Masuo Kabutomori , Noriyuki Inoue , Hiroshi Ishizuka , Toshiaki Aono , Mikihiko Kato , Hideki Tomiyama
IPC分类号： H01M448
CPC分类号： H01M4/131 , H01M2/14 , H01M2/1673 , H01M4/02 , H01M4/366 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/58 , H01M4/62 , H01M4/628 , H01M10/0525 , H01M10/0569 , H01M10/0587 , H01M10/4235
摘要： A nonaqueous secondary battery comprising a positive electrode and a negative electrode both containing a material capable of reversibly intercalating and deintercalating lithium, a nonaqueous electrolyte containing a lithium salt, and a separator, which has at least one protective layer on the negative electrode and/or the positive electrode. The battery has a high discharge potential, satisfactory charge and discharge cycle characteristics, and high safety.
摘要翻译：一种非水系二次电池，其包含正极和负极，两者均含有能够可逆地插入和脱嵌锂的材料，含有锂盐的非水电解质和隔膜，其在负极上具有至少一个保护层和/或正极。电池具有高放电电位，满意的充放电循环特性，安全性高。

8. 发明授权

US4715317A Method for producing of polycrystalline silicon and apparatus thereof 失效
标题翻译：多晶硅的制造方法及其制造方法
公开(公告)号：US4715317A
公开(公告)日：1987-12-29
申请号：US767079
申请日：1985-10-15
申请人： Hiroshi Ishizuka
发明人： Hiroshi Ishizuka
IPC分类号： C01B33/02 , C01B33/035 , C23C16/24
CPC分类号： C01B33/035 , C23C16/24
摘要： A method for production of polycrystalline silicon, comprising: heating a deposition substrate in a reaction vessel of metal, bringing a gaseous silicon hydride close to said substrate, decomposing said silicon hydride, and producing to deposit silicon on the substrate, while the wall of said vessel is regulated in temperature at levels of, approximately, 100.degree. to 450.degree. C. simultaneously with a decrease of 100.degree. to 700.degree. C. from the temperature of said substrate and an apparatus for production of polycrystalline silicon, comprising: a reaction vessel of metallic material closed with a detachable lid, an inlet and an outlet for gas connected to said vessel, a jacket arranged over the substantial part of said vessel to provide an interspace between the jacket and vessel, a closed circuit for a gas consisting partly of said interspace, a two-way temperature controlling means for heating and cooling the gas provided on the circuit, and a deposition substrate of electrical conductive material extending in the vessel axially from the lid.
摘要翻译：一种生产多晶硅的方法，包括：在金属的反应容器中加热沉积基板，使气态硅氢化物靠近所述衬底，分解所述硅氢化物，并在所述衬底上壁产生沉积硅，容器的温度约为100〜450℃，同时从所述基板的温度和多晶硅的制造温度下降到100℃至700℃，所述装置包括：反应容器用可拆卸的盖子封闭的金属材料，连接到所述容器的气体的入口和出口，设置在所述容器的大部分上方以提供夹套和容器之间的间隙的护套，用于气体的闭合回路，其部分由所述间隙，用于加热和冷却设置在电路上的气体的双向温度控制装置和电导率沉积基板 e在容器中从盖子轴向延伸的材料。

9. 发明授权

US4699704A Electrolytic cell for a molten salt 失效
标题翻译：熔盐电解池
公开(公告)号：US4699704A
公开(公告)日：1987-10-13
申请号：US823405
申请日：1986-01-28
申请人： Hiroshi Ishizuka
发明人： Hiroshi Ishizuka
IPC分类号： C25C3/02 , C25C7/00
CPC分类号： C25C7/005
摘要： An electrolytic cell for a molten salt comprising alkali- or alkaline earth metal chloride, comprising: an assembly of anode and cathode in opposed relation with each other, a tightly closable vessel containing said assembly and capable of holding in molten state a salt comprising an alkali- or alkaline earth metal chloride, an insulative partition arranged around the anode and extending axially over a height range including the intended bath level, several projections formed to a length on an effective side of the anode opposed to the cathode, said projection having upper and lower surfaces declining outwards so an open bottom-closed top space is provided under each projection, a rise bore formed lengthwise within the anode to run along the axis and a lateral hole in communicating relation with an inward ascent between said space and rise bore.
摘要翻译：一种用于熔融盐的包括碱金属或碱土金属氯化物的电解池，包括：阳极和阴极彼此相对关系的组件，容纳所述组件并能够保持熔融状态的可紧密封闭的容器，所述盐包含碱 - 或碱土金属氯化物，绝缘隔板，其布置在阳极周围并且在包括预期浴槽水平的高度范围内轴向延伸，多个突起形成为与阴极相对的阳极的有效侧上的长度，所述突起具有上部和下表面向外倾斜，因此在每个突起处设置开放的底部封闭的顶部空间，在阳极中纵向形成的上升孔沿着轴线延伸，以及与所述空间和上升孔之间的向内上升连通的侧向孔。

10. 发明授权

US4647355A Apparatus for molten salt electrolysis 失效
标题翻译：熔盐电解装置
公开(公告)号：US4647355A
公开(公告)日：1987-03-03
申请号：US791558
申请日：1985-10-25
申请人： Hiroshi Ishizuka
发明人： Hiroshi Ishizuka
IPC分类号： C25C3/04 , C25C7/00 , C25C7/02 , C25C3/00
CPC分类号： C25C7/005
摘要： An apparatus for molten salt electrolysis, comprising: an electrolysis chamber which is capable of holding a molten salt of metallic chloride and is closed upwards with a top cover, a cathode placed in said chamber, a lead block of metallic material which runs through the top cover and comprises therealong a bottom-closed axial cavity with inlet and outlet for a fluid coolant connected thereto, said cathode and lead block connected to each other below the bath level to be employed of said salt, and said cavity reaching below said level.
摘要翻译：一种熔盐电解装置，包括：电解室，其能够保持金属氯化物的熔融盐，并且用顶盖封闭，向上放置在所述室中的阴极，穿过顶部的金属材料引线块并且包括一个具有入口和出口的底部封闭的轴向空腔，用于连接到其上的流体冷却剂，所述阴极和铅块在所述盐水平面下方彼此连接以被用于所述盐，并且所述空腔达到所述水平以下。

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