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2. 发明授权

US4362637A Grain boundary layer dielectric ceramic compositions 失效
标题翻译：晶界层介电陶瓷组合物
公开(公告)号：US4362637A
公开(公告)日：1982-12-07
申请号：US249885
申请日：1981-04-01
申请人： Yoshihiro Matsuo , Gen Itakura , Shoichi Ikebe , Tatsuya Wada
发明人： Yoshihiro Matsuo , Gen Itakura , Shoichi Ikebe , Tatsuya Wada
IPC分类号： C04B35/46 , C04B35/465 , C04B35/47 , H01B3/12 , H01G4/12
CPC分类号： C04B35/47 , C04B35/465 , H01B3/12 , H01G4/1281
摘要： Grain boundary layer dielectric ceramic compositions comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol % of SrO and CaO, 49.72 to 50.23 mol % of TiO.sub.2, 0.05 to 0.3 mol % of Nb.sub.2 O.sub.5, substantially each of said grains being surrounded by grain boundary layer dielectric materials which are formed by grain boundary diffusion of a mixture having a composition of 93.5 to 8.5 mol % of Bi.sub.2 O.sub.3, 4.5 to 45 mol % of Cu.sub.2 O, 0.5 to 4 mol % of MnO.sub.2, 1 to 8.5 mol % of B.sub.2 O.sub.3, 0.5 to 17 mol % of La.sub.2 O.sub.3, and below 17 mol % of TiO.sub.2.These ceramic compositions provide capacitors having a temperature coefficient of capacitance less than .+-.15%, an apparent dielectric constant higher than 35,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 500 V/mm; or capacitors having a temperature coefficient of capacitance less than .+-.10%, an apparent dielectric constant higher than 20,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm; or capacitors having a temperature coefficient of capacitance less than .+-.5%, an apparent dielectric constant higher than 5,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm.
摘要翻译：包含组成为SrO和CaO的组成为50.23〜49.47摩尔％的二氧化铈，49.72〜50.23摩尔％的TiO 2，0.05〜0.3摩尔％的Nb 2 O 5的半导体陶瓷颗粒的晶界层介电陶瓷组合物，基本上每个所述晶粒被晶界包围由Bi2O3为93.5〜8.5mol％，Cu2O为4.5〜45mol％，MnO2为0.5〜4mol％，B2O3为1〜8.5mol％，B2O3为0.5的混合物的晶界扩散形成的层间介电材料至17mol％的La 2 O 3，以及低于17mol％的TiO 2。这些陶瓷组合物提供具有小于+/- 15％的电容温度系数，高于35,000的表观介电常数，小于0.01的介电损耗和高于500V / mm的击穿电压的电容器; 或具有小于+/- 10％的电容温度系数的电容器，高于20,000的表观介电常数，小于0.01的介电损耗和高于700V / mm的击穿电压; 或具有小于+/- 5％的电容温度系数的电容器，高于5,000的表观介电常数，小于0.01的介质损耗和高于700V / mm的击穿电压。

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