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    • 4. 发明授权
    • Optical imaging apparatus
    • 光学成像装置
    • US06809866B2
    • 2004-10-26
    • US10207676
    • 2002-07-29
    • Tianyu XieMamoru KanekoToshiro OkamuraYasuhiro Kamihara
    • Tianyu XieMamoru KanekoToshiro OkamuraYasuhiro Kamihara
    • G02B2710
    • G02B21/0056A61B3/102G01N21/4795G02B21/0028
    • An optical imaging apparatus includes an optical probe and an apparatus main body which controls and drives the optical probe via a connecting cable. The optical probe includes a low-coherence light source, a half mirror, an XY reflecting mirror scan, an objective optical system, a reflecting mirror, a modulating mirror, and a photo detector. In the optical probe, the modulating mirror and the objective optical system, as optical path length interlockingly adjusting elements, are integrally arranged to an optical path length interlockingly adjusting base, together with a reflecting-side lens. The optical probe has an advancing and regressing driving unit which advances and regresses the optical path length interlockingly adjusting base in the optical axis direction (Z direction).
    • 光学成像装置包括光学探针和通过连接电缆来控制和驱动光学探针的装置主体。 光学探针包括低相干光源,半反射镜,XY反射镜扫描,物镜光学系统,反射镜,调制反射镜和光电检测器。 在光学探头中,作为光路长度互锁调节元件的调制反射镜和物镜光学系统与反射侧透镜一体地布置成与光路长度互锁调节底座。 光学探针具有前进和回归驱动单元,其沿光轴方向(Z方向)前进和回归光路长度互锁调节基座。
    • 7. 发明授权
    • Method and apparatus for inhibiting a scattered component in a light
having passed through an examined object
    • 用于抑制已经通过被检查物体的光中的散射成分的方法和装置
    • US5386819A
    • 1995-02-07
    • US46929
    • 1993-04-14
    • Mamoru KanekoKatsuyuki YamamotoKoichi Shimizu
    • Mamoru KanekoKatsuyuki YamamotoKoichi Shimizu
    • A61B5/00A61B1/06
    • A61B5/0059
    • In the method and apparatus for inhibiting a scattered component in a light having passed through the interior of an examined object, a light is radiated to the examined object, the sum of a straight advancing light component and scattered light component of the light having passed through the interior of the examined object is detected, only the scattered light component of the light having passed through the interior of the examined object is detected and the straight advancing light component is detected by an operation using the two detected outputs. In the scattered component inhibiting method and apparatus, a light modulated with a period larger than the delay of the propagating time by the scatter in the examined object is radiated to the examined object, the light having passed through the interior of the examined object is detected and the straight advancing light component is extracted by extracting a predetermined phase of the detected output. Or, in the scattered component inhibiting method and apparatus, a light of a plurality of wavelengths is radiated to the examined object, the light having passed through the interior of the examined object is detected and the scattered light component is inhibited by an operation using a plurality of detected outputs corresponding to the detected plurality of wavelengths.
    • 在通过被检查物体的内部的光中抑制散射成分的方法和装置中,将光照射到被检查物体,直线前进光分量和已经通过的光的散射光分量之和 检测被检查物体的内部,仅检测到已经通过被检查物体的内部的光的散射光分量,并且通过使用两个检测到的输出的操作来检测直线前进光分量。 在散射成分抑制方法和装置中,通过被检查物体中的散射将大于延迟时间的延迟调制的光照射到被检查物体,检测到通过被检查物体的内部的光 并且通过提取检测到的输出的预定相位来提取直线前进的光分量。 或者,在散射成分抑制方法和装置中,将多个波长的光照射到被检查物体,检测到通过被检查物体的内部的光,并且通过使用 多个检测到的输出对应于检测到的多个波长。
    • 10. 发明申请
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US20060131645A1
    • 2006-06-22
    • US11272482
    • 2005-11-14
    • Mamoru Kaneko
    • Mamoru Kaneko
    • H01L29/94
    • H01L29/7811H01L29/1095H01L29/41741H01L29/4238H01L29/66734H01L29/7813
    • In the present invention, an npn junction or a pin junction is formed in an element peripheral part surrounding an element part. In addition, the same potential as that of a source electrode in the element part is applied, and a breakdown voltage of the element peripheral part is set to be always lower than that of the element part. Alternatively, resistance of the element peripheral part is lowered. Thus, breakdown always occurs in the element peripheral part, and the breakdown voltage becomes stable. Moreover, damage caused by breakdown can be prevented by eliminating occurrence of breakdown in a fragile gate oxide film. Furthermore, since the resistance is lowered, electrostatic breakdown strength is improved.
    • 在本发明中,在围绕元件部分的元件周边部分中形成npn结或pin结。 此外,施加与元件部分中的源电极相同的电位,并且元件周边部分的击穿电压被设置为总是低于元件部分的击穿电压。 或者,元件周边部分的电阻降低。 因此,在元件周边部分中始终发生击穿,并且击穿电压变得稳定。 此外,可以通过消除脆性栅极氧化膜中的击穿的发生来防止由击穿引起的损坏。 此外,由于电阻降低,静电击穿强度提高。