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1. 发明申请

US20050136693A1 Thermal processing unit and thermal processing method 审中-公开
标题翻译：热处理单元和热处理方法
公开(公告)号：US20050136693A1
公开(公告)日：2005-06-23
申请号：US10942103
申请日：2004-09-16
申请人： Kazuhide Hasebe , Yutaka Takahashi , Kota Umezawa , Satoshi Takagi , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
发明人： Kazuhide Hasebe , Yutaka Takahashi , Kota Umezawa , Satoshi Takagi , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
IPC分类号： C23C16/34 , C23C16/455 , H01L21/205 , H01L21/314 , H01L21/318 , H01L21/324 , H01L21/336 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45531 , C23C16/45546 , H01L21/022 , H01L21/02271 , H01L21/3141 , H01L21/3185
摘要： The present invention is a thermal processing method of conducting a thermal process to an object to be processed, a base film having been formed on a surface of the object to be processed, the base film consisting of a SiO2 film or a SiON film. The method includes: an arranging step of arranging the object to be processed in a processing container; and a laminating step of supplying a source gas and an ammonia gas alternatively and repeatedly, so as to form a silicon nitride film on the base film repeatedly, the source gas being selected from a group consisting of dichlorosilane, hexachlorodisilane and tetrachlorosilane.
摘要翻译：本发明是对待处理物体进行热处理的热处理方法，在被处理物的表面上形成的基膜，由SiO 2 2 电影或SiON电影。该方法包括：将处理对象物置于处理容器内的布置步骤; 以及层叠步骤，交替重复地供给源气体和氨气，以在所述基膜上重复形成氮化硅膜，所述源气体选自二氯硅烷，六氯二硅烷和四氯硅烷。

2. 发明授权

US07452826B2 Oxidation method and oxidation system 有权
标题翻译：氧化法和氧化体系
公开(公告)号：US07452826B2
公开(公告)日：2008-11-18
申请号：US11502503
申请日：2006-08-11
申请人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
发明人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/67017 , H01L21/67109
摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
摘要翻译：氧化法能够以改善的膜间厚度均匀性形成氧化膜。氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛处理容器22通过氧化气体与还原气体的相互作用。将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

3. 发明授权

US07129186B2 Oxidation method and oxidation system 有权
标题翻译：氧化法和氧化体系
公开(公告)号：US07129186B2
公开(公告)日：2006-10-31
申请号：US10992469
申请日：2004-11-19
申请人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
发明人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
摘要翻译：氧化法能够以改善的膜间厚度均匀性形成氧化膜。氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛处理容器22通过氧化气体和还原气体的相互作用。将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

4. 发明申请

US20060276051A1 Oxidation method and oxidation system 有权
标题翻译：氧化法和氧化体系
公开(公告)号：US20060276051A1
公开(公告)日：2006-12-07
申请号：US11502503
申请日：2006-08-11
申请人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
发明人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/67017 , H01L21/67109
摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
摘要翻译：氧化法能够以改善的膜间厚度均匀性形成氧化膜。氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛处理容器22通过氧化气体与还原气体的相互作用。将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

5. 发明申请

US20050164518A1 Oxidation method and oxidation system 有权
标题翻译：氧化法和氧化体系
公开(公告)号：US20050164518A1
公开(公告)日：2005-07-28
申请号：US10992469
申请日：2004-11-19
申请人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
发明人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
IPC分类号： H01L21/00 , H01L21/316 , H01L21/31
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
摘要翻译：氧化法能够以改善的膜间厚度均匀性形成氧化膜。氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛处理容器22通过氧化气体和还原气体的相互作用。将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

6. 发明授权

US07981809B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07981809B2
公开(公告)日：2011-07-19
申请号：US11298607
申请日：2005-12-12
申请人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
发明人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/3144
摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
摘要翻译：用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤反应室内目标衬底上的氮氧化硅膜。预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。

7. 发明申请

US20060128161A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20060128161A1
公开(公告)日：2006-06-15
申请号：US11298607
申请日：2005-12-12
申请人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
发明人： Tetsuya Shibata , Yutaka Takahashi , Kota Umezawa , Masahiko Tomita
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/3144
摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
摘要翻译：用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤反应室内目标衬底上的氮氧化硅膜。预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。

8. 发明申请

US20050227459A1 Film formation method and apparatus for semiconductor process 失效
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20050227459A1
公开(公告)日：2005-10-13
申请号：US11091414
申请日：2005-03-29
申请人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
发明人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
IPC分类号： C23C16/24 , C23C16/455 , C23C16/56 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/324 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： C23C16/24 , C23C16/45557 , C23C16/56 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L21/28035 , H01L21/324 , H01L29/78
摘要： A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.
摘要翻译：半导体工艺的成膜方法被布置成在反应容器内的工艺场中通过CVD在目标衬底上形成非晶硅膜，同时在工艺领域中提供含有硅的第一工艺气体，并将工艺场设定在第一温度为550℃以上且处于第一压力。该方法被布置成随后在工艺领域中通过热处理多晶结晶非晶硅膜以形成多晶硅膜，同时将不同于第一工艺气体的第二工艺气体供应到工艺领域中，并且将工艺在比第一温度高的第二温度和第二压力下进行。

9. 发明授权

US07354858B2 Film formation method and apparatus for semiconductor process 失效
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07354858B2
公开(公告)日：2008-04-08
申请号：US11091414
申请日：2005-03-29
申请人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
发明人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
IPC分类号： H01L21/44
CPC分类号： C23C16/24 , C23C16/45557 , C23C16/56 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L21/28035 , H01L21/324 , H01L29/78
摘要： A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.
摘要翻译：半导体工艺的成膜方法被布置成在反应容器内的工艺场中通过CVD在目标衬底上形成非晶硅膜，同时在工艺领域中提供含有硅的第一工艺气体，并将工艺场设定在第一温度为550℃以上且处于第一压力。该方法被布置成随后在工艺领域中通过热处理多晶结晶非晶硅膜以形成多晶硅膜，同时将不同于第一工艺气体的第二工艺气体供应到工艺领域中，并且将工艺在比第一温度高的第二温度和第二压力下进行。

10. 发明授权

US11789385B2 Transfer bias and pressure in an image forming apparatus 有权
公开(公告)号：US11789385B2
公开(公告)日：2023-10-17
申请号：US17707315
申请日：2022-03-29
申请人： Yuuki Aoki , Seiichi Kogure , Hideki Kimura , Hiroshi Kikuchi , Yutaka Takahashi , Yusuke Ishizuka , Takuya Akiyama , Yutaka Goto , Kazuhiro Shimada
发明人： Yuuki Aoki , Seiichi Kogure , Hideki Kimura , Hiroshi Kikuchi , Yutaka Takahashi , Yusuke Ishizuka , Takuya Akiyama , Yutaka Goto , Kazuhiro Shimada
IPC分类号： G03G15/16
CPC分类号： G03G15/1675 , G03G15/167
摘要： An image forming apparatus includes an image bearer; a nip forming member configured to form a transfer nip between the image bearer and the nip forming member; a nip pressure changer configured to change a nip pressure of the transfer nip; a transfer bias applier configured to apply, to the transfer nip, a transfer bias in which an AC component is superimposed on a DC component; and a DC component adjuster configured to adjust the DC component in the transfer bias, according to the nip pressure that is changed by the nip pressure changer.

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