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    • 4. 发明授权
    • Method for producing semiconductor laser module
    • 半导体激光器模块的制造方法
    • US06348360B1
    • 2002-02-19
    • US09528156
    • 2000-03-17
    • Nong ChenKiyoshi TakeiYoshiaki WatanabeKiyofumi Chikuma
    • Nong ChenKiyoshi TakeiYoshiaki WatanabeKiyofumi Chikuma
    • H01L2100
    • H01S5/0207H01S5/02284H01S5/1085H01S2301/176
    • A method for producing a semiconductor laser module is provided which enables simplifying the production process by eliminating the process of positioning the laser light emitting portion on the substrate, as well as enabling positioning an optical fiber on an appropriate position without aligning the optical fiber with the laser light emitting portion. A semiconductor laser module is fabricated through a process including a substrate preparation step for preparing a substrate including an active layer between cladding layers; a supporting groove portion formation step for forming a supporting groove portion to support an optical fiber on the substrate; and an electrode formation step for forming an electrode on a substrate surface of an opposing portion which faces the supporting groove portion.
    • 提供一种制造半导体激光器模块的方法,其通过消除将激光发射部分定位在基板上的过程以及使光纤定位在适当位置而不使光纤与 激光发光部。 通过包括用于制备包括在包层之间的有源层的衬底的衬底制备步骤的工艺来制造半导体激光器模块; 支撑槽部形成工序,形成用于将基板上的光纤支撑的支撑槽部; 以及电极形成步骤,用于在与支撑槽部分相对的相对部分的基板表面上形成电极。
    • 9. 发明授权
    • Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same
    • 脊式半导体激光器的横向耦合分布式反馈及其制造方法
    • US06292503B1
    • 2001-09-18
    • US09270827
    • 1999-03-18
    • Yoshiaki WatanabeKiyoshi TakeiNong ChenKiyofumi Chikuma
    • Yoshiaki WatanabeKiyoshi TakeiNong ChenKiyofumi Chikuma
    • H01S500
    • H01S5/22H01S5/12H01S5/1231H01S5/1237H01S5/209
    • There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.
    • 提供了一种制造脊型LC-DFB半导体激光器的方法,其中具有由用于形成在由半导体制成的有源层上的用于脊条的材料制成的包层的激光基板。 在包覆层上形成条纹掩模,通过选择性湿蚀刻从包覆层形成两个横向平坦部分,从而形成从其突出的脊条,并且具有条形掩模封盖的平坦的顶部。 在两个侧面平坦部分,脊条和条纹掩模的侧壁上形成光栅掩模。 栅格掩模在脊条延伸的方向上具有周期性结构。 通过光栅掩模对棱条的两个横向平坦部分和侧壁进行干蚀刻,然后将脊条的两个侧向平坦部分和侧壁湿法蚀刻以形成用于脊的材料的光栅 在两个横向平坦部分上的条纹,脊状条的边壁和有源层,以便限定与脊条相邻的托架光栅部分。