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1. 发明授权

US07781230B2 Electro-resistance element, electro-resistance memory using the same and method of manufacturing the same 失效
标题翻译：电阻元件，使用该电阻元件的电阻存储器及其制造方法
公开(公告)号：US07781230B2
公开(公告)日：2010-08-24
申请号：US11683580
申请日：2007-03-08
申请人： Akihiro Odagawa , Yoshihisa Nagano
发明人： Akihiro Odagawa , Yoshihisa Nagano
IPC分类号： B23B9/00
CPC分类号： C23C28/048 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/36 , G11C13/0007 , H01L27/101
摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values between a pair of electrodes and is switchable from one of the two or more states into another by applying a predetermined voltage or current between the electrodes. The electro-resistance element includes a substrate and a multilayer structure disposed on the substrate, the multilayer structure includes an upper electrode, a lower electrode and an electro-resistance layer disposed between the electrodes, wherein the electro-resistance layer includes Fe2O3, and Fe3O4 contained in an amount of 0% to 20% of Fe2O3 in percent by weight, the lower electrode is made of an iron oxide having a different composition from the electro-resistance layer and containing Fe3O4, and the electro-resistance layer and the lower electrode make contact with each other.
摘要翻译：提供了具有与常规元件不同的构造并且与半导体制造工艺和电阻变化特性的亲和性优异的电阻元件。电阻元件具有两个或更多个状态，其中一对电极之间的电阻值可以通过在电极之间施加预定的电压或电流而从两个或更多个状态之一切换到另一个状态。电阻元件包括基板和设置在基板上的多层结构，多层结构包括上电极，下电极和设置在电极之间的电阻层，其中电阻层包括Fe 2 O 3和Fe 3 O 4 含有0重量％至20重量％的Fe 2 O 3的量，下电极由具有与电阻层不同的组成并含有Fe 3 O 4的氧化铁制成，并且电阻层和下电极互相接触。

2. 发明申请

US20070240995A1 ELECTRO-RESISTANCE ELEMENT, ELECTRO-RESISTANCE MEMORY USING THE SAME AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：电阻元件，使用其的电阻记忆体及其制造方法
公开(公告)号：US20070240995A1
公开(公告)日：2007-10-18
申请号：US11683580
申请日：2007-03-08
申请人： Akihiro ODAGAWA , Yoshihisa Nagano
发明人： Akihiro ODAGAWA , Yoshihisa Nagano
IPC分类号： B32B9/00 , C23C28/00 , B32B19/00
CPC分类号： C23C28/048 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/36 , G11C13/0007 , H01L27/101
摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values between a pair of electrodes and is switchable from one of the two or more states into another by applying a predetermined voltage or current between the electrodes. The electro-resistance element includes a substrate and a multilayer structure disposed on the substrate, the multilayer structure includes an upper electrode, a lower electrode and an electro-resistance layer disposed between the electrodes, wherein the electro-resistance layer includes Fe2O3, and Fe3O4 contained in an amount of 0% to 20% of Fe2O3 in percent by weight, the lower electrode is made of an iron oxide having a different composition from the electro-resistance layer and containing Fe3O4, and the electro-resistance layer and the lower electrode make contact with each other.
摘要翻译：提供了具有与常规元件不同的构造并且与半导体制造工艺和电阻变化特性的亲和性优异的电阻元件。电阻元件具有两个或更多个状态，其中一对电极之间的电阻值可以通过在电极之间施加预定的电压或电流而从两个或更多个状态之一切换到另一个状态。电阻元件包括基板和布置在基板上的多层结构，该多层结构包括上电极，下电极和设置在电极之间的电阻层，其中电阻层包括Fe 2 <3 O 3，Fe 3 O 4含有0〜20％的Fe 2 O 3 下部电极由与电阻层不同的组成的氧化铁制成，并含有Fe 3 O 3， SUB> 4 <！ - SIPO - >电极层和下电极彼此接触。

3. 发明授权

US07791119B2 Electro-resistance element and electro-resistance memory using the same 失效
标题翻译：电阻元件和使用其的电阻存储器
公开(公告)号：US07791119B2
公开(公告)日：2010-09-07
申请号：US11693960
申请日：2007-03-30
申请人： Akihiro Odagawa , Yoshihisa Nagano
发明人： Akihiro Odagawa , Yoshihisa Nagano
IPC分类号： H01L29/94
CPC分类号： H01L45/145 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1625 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.
摘要翻译：提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。电阻层包括能够形成氮化物的第一和第二元素和氮。

4. 发明申请

US20070246832A1 ELECTRO-RESISTANCE ELEMENT AND ELECTRO-RESISTANCE MEMORY USING THE SAME 失效
标题翻译：电阻元件和使用该电阻元件的电阻记忆
公开(公告)号：US20070246832A1
公开(公告)日：2007-10-25
申请号：US11693960
申请日：2007-03-30
申请人： Akihiro ODAGAWA , Yoshihisa Nagano
发明人： Akihiro ODAGAWA , Yoshihisa Nagano
IPC分类号： H01L23/48
CPC分类号： H01L45/145 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1625 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.
摘要翻译：提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。电阻层包括能够形成氮化物的第一和第二元素和氮。

5. 发明授权

US07531863B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US07531863B2
公开(公告)日：2009-05-12
申请号：US11270615
申请日：2005-11-10
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.

6. 发明申请

US20050167725A1 Capacitor element and method for fabricating the same 有权
标题翻译：电容元件及其制造方法
公开(公告)号：US20050167725A1
公开(公告)日：2005-08-04
申请号：US11035175
申请日：2005-01-14
申请人： Yoshihisa Nagano , Takumi Mikawa
发明人： Yoshihisa Nagano , Takumi Mikawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8239 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/00
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/57 , H01L28/75
摘要： A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a ferroelectric material or a high dielectric material and formed between the lower and upper electrodes. The lower electrode, the capacitor dielectric film, and the upper electrode are formed in a region extending at least from within a hole provided in an interlayer insulating film having a first hydrogen barrier film disposed on the upper surface thereof toward a position above the hole. A second hydrogen barrier film in contact with the first hydrogen barrier film is disposed to cover the upper surface of the upper electrode and the side surface of the portion of the upper electrode which has been formed above the hole.
摘要翻译：提供一种电容器元件，其由下电极，与下电极相对形成的上电极和由电介质材料或高电介质材料制成并形成在下电极和上电极之间的电容器电介质膜组成。下电极，电容器电介质膜和上电极形成在至少从设置在其上表面上的第一氢阻挡膜朝向孔上方的位置的层间绝缘膜的孔内延伸的区域中。与第一氢阻挡膜接触的第二氢阻挡膜设置成覆盖上电极的上表面和形成在孔上方的上电极部分的侧表面。

7. 发明授权

US06809000B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06809000B2
公开(公告)日：2004-10-26
申请号：US09797987
申请日：2001-03-05
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L2120
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

8. 发明授权

US06441420B1 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US06441420B1
公开(公告)日：2002-08-27
申请号：US09576971
申请日：2000-05-24
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L2994
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.

9. 发明授权

US06239462B1 Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same 失效
标题翻译：具有改进的抗扩散性能的半导体电容器件及其制造方法
公开(公告)号：US06239462B1
公开(公告)日：2001-05-29
申请号：US09120893
申请日：1998-07-23
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

10. 发明授权

US06169304A Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer 失效
标题翻译：具有钝化层的半导体器件使氢扩散到电介质层中最小化
公开(公告)号：US06169304A
公开(公告)日：2001-01-02
申请号：US09071534
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

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