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1. 发明授权

US07207858B2 Method for manufacturing plasma display panel 失效
标题翻译：等离子显示面板制造方法
公开(公告)号：US07207858B2
公开(公告)日：2007-04-24
申请号：US10485415
申请日：2003-04-02
申请人： Akihiro Matsuda , Fumio Sakamoto , Kenji Date , Koji Aoto
发明人： Akihiro Matsuda , Fumio Sakamoto , Kenji Date , Koji Aoto
IPC分类号： H01J9/00
CPC分类号： H01J9/445
摘要： Disclosed is a method of manufacturing plasma display panels for carrying out aging with high productivity. In an aging process for applying a predetermined voltage and driving plasma display panels 21 for display operation, each plasma display panel is set into an aging unit provided with cooling means, and the aging is carried out on the plasma display panel while cooling the plasma display panel by the cooling means provided in the aging unit. This method can thus reduce temperature rise of the panel and prevent the panel from being cracked during the aging process.
摘要翻译：公开了一种用于以高生产率进行老化的等离子体显示面板的制造方法。在施加预定电压和驱动等离子体显示面板21进行显示操作的老化处理中，将每个等离子体显示面板设置成具有冷却装置的老化单元，并且在等离子体显示面板上进行老化，同时冷却等离子体显示通过设置在老化单元中的冷却装置。因此，该方法可以降低面板的温度上升并防止面板在老化过程中破裂。

2. 发明授权

US07288012B2 Method of manufacturing plasma display panel 失效
标题翻译：等离子体显示面板的制造方法
公开(公告)号：US07288012B2
公开(公告)日：2007-10-30
申请号：US10533138
申请日：2004-06-17
申请人： Koji Akiyama , Koji Aoto , Masaaki Yamauchi , Takashi Aoki , Akihiro Matsuda
发明人： Koji Akiyama , Koji Aoto , Masaaki Yamauchi , Takashi Aoki , Akihiro Matsuda
IPC分类号： H01J9/00 , H01J9/44
CPC分类号： H01J9/445 , G09G3/298 , G09G2320/0228
摘要： A plasma display panel is provided that includes scan electrodes, sustain electrodes, and address electrodes. A first pulse voltage for the address electrodes or a second pulse voltage for the address electrodes is applied to the address electrodes in an aging step in which aging discharge is performed by alternately applying pulse voltage for the scan electrodes and pulse voltage for the sustain electrodes at least across the scan electrodes and the sustain electrodes. The first pulse voltage has a rising edge timing synchronized with a rising edge timing of the pulse voltage for the scan electrodes and a pulse width smaller than that of the pulse voltage for the scan electrodes. The second pulse voltage has a rising edge timing synchronized with a rising edge timing of the pulse voltage for the sustain electrodes and a pulse width smaller than that of the pulse voltage for the sustain electrodes.
摘要翻译：提供了包括扫描电极，维持电极和寻址电极的等离子体显示面板。用于寻址电极的第一脉冲电压或寻址电极的第二脉冲电压在老化步骤中被施加到寻址电极，在老化步骤中，通过交替地对扫描电极施加脉冲电压和维持电极的脉冲电压来进行老化放电至少跨越扫描电极和维持电极。第一脉冲电压具有与扫描电极的脉冲电压的上升沿定时同步的上升沿定时，并且脉冲宽度小于扫描电极的脉冲电压的脉冲宽度。第二脉冲电压具有与维持电极的脉冲电压的上升沿定时同步的上升沿定时以及比维持电极的脉冲电压的脉冲宽度小的脉冲宽度。

3. 发明申请

US20060166585A1 Method of manufacturing plasma display panel 失效
标题翻译：等离子体显示面板的制造方法
公开(公告)号：US20060166585A1
公开(公告)日：2006-07-27
申请号：US10533138
申请日：2004-06-17
申请人： Koji Akiyama , Koji Aoto , Masaaki Yamauchi , Takashi Aoki , Akihiro Matsuda
发明人： Koji Akiyama , Koji Aoto , Masaaki Yamauchi , Takashi Aoki , Akihiro Matsuda
IPC分类号： H01J9/24 , H01J9/00
CPC分类号： H01J9/445 , G09G3/298 , G09G2320/0228
摘要： In a plasma display panel including scan electrodes, sustain electrodes, and address electrodes, first pulse voltage for the address electrodes or second pulse voltage for the address electrodes is applied to the address electrodes, in an aging step in which aging discharge is performed by alternately applying pulse voltage for the scan electrodes and pulse voltage for the sustain electrodes at least across the scan electrodes and the sustain electrodes. The first pulse voltage has rising edge timing synchronizing with rising edge timing of the pulse voltage for the scan electrodes and a pulse width smaller than that of the pulse voltage for the scan electrodes. The second pulse voltage has rising edge timing synchronizing with rising edge timing of the pulse voltage for the sustain electrodes and a pulse width smaller than that of the pulse voltage for the sustain electrodes.
摘要翻译：在包括扫描电极，维持电极和寻址电极的等离子体显示面板中，在寻址电极中施加用于寻址电极的第一脉冲电压或寻址电极的第二脉冲电压，在老化步骤中，通过交替地进行老化放电至少对扫描电极和维持电极两端施加用于扫描电极的脉冲电压和维持电极的脉冲电压。第一脉冲电压具有与扫描电极的脉冲电压的上升沿定时同步的上升沿定时，并且具有小于扫描电极的脉冲电压的脉冲宽度的脉冲宽度。第二脉冲电压具有与维持电极的脉冲电压的上升沿定时同步的上升沿定时，并且具有小于维持电极的脉冲电压的脉冲宽度的脉冲宽度。

4. 发明申请

US20090209721A1 Copolymer, production process thereof, lubricating oil viscosity modifier, and lubricating oil composition 有权
标题翻译：共聚物，其制备方法，润滑油粘度调节剂和润滑油组合物
公开(公告)号：US20090209721A1
公开(公告)日：2009-08-20
申请号：US12379143
申请日：2009-02-13
申请人： Satoshi Ikeda , Akihiro Matsuda , Yoshiki Shimokawatoko , Junichi Mohri , Toshiyuki Shimazaki , Hiroshi Terao , Koji Takeda
发明人： Satoshi Ikeda , Akihiro Matsuda , Yoshiki Shimokawatoko , Junichi Mohri , Toshiyuki Shimazaki , Hiroshi Terao , Koji Takeda
IPC分类号： C08F210/14 , C08F210/06 , C08F210/08
CPC分类号： C10M143/08 , C08F4/65912 , C08F4/65927 , C08F210/16 , C10M143/00 , C10M2203/1006 , C10M2205/022 , C10N2220/022 , C10N2230/02 , C08F4/65904 , C08F210/06 , C08F2500/20 , C08F2500/03 , C08F2500/17 , C08F2500/08 , C10M2205/028
摘要： Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers.A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 α-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm≧1073×D−893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (ΔThalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (ΔThalf) and the melting point (Tm) satisfy the equation: ΔThalf≦−0.71×Tm+101.4; (6) the heat of fusion (ΔH) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.; (8) the heat of fusion (ΔH), the crystallization temperature (Tc), each measured by DSC and the crystallization temperature measured by a CRYSTAF method (Tcrystaf) satisfy the equation: Tc−Tcrystaf≧0.028×ΔH+25.3.
摘要翻译：当用作润滑油粘度调节剂时，共聚物使润滑油显示出优异的低温性能。公开了制备共聚物的方法。润滑油粘度调节剂和润滑油组合物含有共聚物。共聚物包括衍生自乙烯的结构单元和衍生自C3-20α-烯烃的结构单元，并且满足以下要求（1）至（8）：（1）根据DSC的熔点（Tm）在 0〜60℃。（2）熔点（Tm）和密度D（g / cm 3）满足下式：Tm> = 1073×D-893; （3）根据GPC的Mw / Mn为1.6〜5.0; （4）通过DSC测定的熔融峰的半值宽度（DeltaThalf）不大于90℃。（5）半值宽度（DeltaThalf）和熔点（Tm）满足以下等式：DeltaThalf <= -0.71xTm + 101.4; （6）通过DSC测定的熔解热（DeltaH）不大于60J / g; （7）通过DSC测定的结晶温度（Tc）为70℃以下。（8）通过DSC测定的各自测量的结晶温度（Tc），通过CRYSTAF法（Tcrystaf）测定的结晶温度满足下列公式：<？in-line-formula description =“In- 线公式“end =”lead“？> Tc-Tcrystaf> = 0.028xDeltaH + 25.3。<？in-line-formula description =”In-line Formulas“end =”tail“？>

5. 发明申请

US20070007414A1 Vehicle-mounted electronic device 审中-公开
标题翻译：车载电子设备
公开(公告)号：US20070007414A1
公开(公告)日：2007-01-11
申请号：US11512233
申请日：2006-08-30
申请人： Akihiro Matsuda , Ryoichi Hirako
发明人： Akihiro Matsuda , Ryoichi Hirako
IPC分类号： A47F5/00
CPC分类号： B60K37/06 , B60K2370/81 , B60R11/0211 , B60R2011/0005 , B60R2011/0047 , B60R2011/0052 , B60R2011/0094 , B60R2011/027
摘要： The invention provides a structure for attaching the main body and components of a vehicle-mounted electronic device, capable of increasing the size of an operation panel and a monitor for the electronic device stored in a vehicle-mounted electronic device storage section. In a first phase of the invention, in a structure for attaching a vehicle-mounted electronic device by fixing a vehicle-mounted electronic device to a vehicle, fixing a cluster panel to the vehicle in such a manner as to pass the vehicle-mounted electronic device therethrough, and fixing a panel wider than the opening in the cluster panel to the vehicle-mounted electronic device in such a manner as to place it over the cluster panel, a sub-bracket is attached to the lateral surface of the electronic device main body in such a manner that its position can be adjusted, and an attaching metal element is fastened to the sub-bracket so as to fasten the attaching metal element to the vehicle.
摘要翻译：本发明提供了一种用于安装车载电子设备的主体和部件的结构，其能够增加操作面板的尺寸和用于存储在车载电子设备存储部分中的电子设备的监视器。在本发明的第一阶段中，在通过将车载电子设备固定到车辆来安装车载电子设备的结构中，将集群面板固定在车辆上以使车载电子装置穿过其中，并将面板比面板上的开口更宽的面板固定在车载电子设备上，以将其放置在群集面板上，将副托架安装在电子设备主体的侧表面上本体可以调整其位置，并且将附接金属元件紧固到副支架上，以将附接金属元件紧固到车辆上。

6. 发明授权

US06333528B1 Semiconductor device having a capacitor exhibiting improved moisture resistance 失效
标题翻译：具有显示改善的耐湿性的电容器的半导体装置
公开(公告)号：US06333528B1
公开(公告)日：2001-12-25
申请号：US09071795
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

7. 发明授权

US06126752A Semiconductor device having capacitor and manufacturing apparatus thereof 失效
标题翻译：具有电容器的半导体器件及其制造装置
公开(公告)号：US06126752A
公开(公告)日：2000-10-03
申请号：US947712
申请日：1997-10-09
申请人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
发明人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/06 , H01L27/115 , H01L29/92 , B05B5/057
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/0688 , H01L27/1085 , H01L27/11507 , H01L28/40 , H01L28/55
摘要： A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.
摘要翻译：一种包括集成电路和电容器的半导体器件。在该电容器中，在层间绝缘膜上形成独立于集成电路的底电极，电介质膜和顶电极，并且顶电极和底电极通过在保护膜中开口的接触孔与金属互连连接用于保护电容器的表面。在这种结构中，顶部电极或底部电极与集成电路的偏置线连接，另一个连接到接地线，使得可以减少外部发射而不必将电容器连接到外部。

8. 发明授权

US6015987A Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof 失效
标题翻译：具有显示出改善的耐电阻性的电容器的半导体器件及其制造方法
公开(公告)号：US6015987A
公开(公告)日：2000-01-18
申请号：US71122
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L27/108 , H01L29/00 , H01L29/76 , H01L29/94
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

9. 发明授权

US5717233A Semiconductor device having capacitior and manufacturing method thereof 失效
标题翻译：具有电容的半导体器件及其制造方法
公开(公告)号：US5717233A
公开(公告)日：1998-02-10
申请号：US778953
申请日：1997-01-06
申请人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
发明人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/06 , H01L27/115 , H01L29/92 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/0688 , H01L27/1085 , H01L27/11507 , H01L28/40 , H01L28/55
摘要： A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.
摘要翻译：一种包括集成电路和电容器的半导体器件。在该电容器中，在层间绝缘膜上形成独立于集成电路的底电极，电介质膜和顶电极，并且顶电极和底电极通过在保护膜中开口的接触孔与金属互连连接用于保护电容器的表面。在这种结构中，顶部电极或底部电极与集成电路的偏置线连接，另一个连接到接地线，使得可以减少外部发射而不必将电容器连接到外部。

10. 发明授权

US5644158A Semiconductor memory device reducing hydrogen content 失效
标题翻译：半导体存储器件具有降低的氢含量
公开(公告)号：US5644158A
公开(公告)日：1997-07-01
申请号：US492690
申请日：1995-06-20
申请人： Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
发明人： Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
IPC分类号： H01L27/04 , H01L21/02 , H01L21/3105 , H01L21/324 , H01L21/768 , H01L21/822 , H01L27/10 , H01L21/3205
CPC分类号： H01L28/40 , H01L21/3105 , H01L21/76828
摘要： A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.
摘要翻译：一种半导体器件，包括：（a）在其表面上形成集成电路的半导体衬底，（b）形成在半导体器件上并具有通向集成电路的第一接触孔的第一绝缘层，（c）电容元件形成在所述第一绝缘层上，（d）形成在所述第一绝缘层上以覆盖所述电容元件的第二绝缘层，以及具有分别通向所述电容元件的上下电极的第二接触孔，以及（e）互连通过第一和第二接触孔分别连接到集成电路和电容元件。该半导体器件的氢密度为1011原子/ cm 2以下。

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