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1. 发明授权

US09376336B2 Quartz glass crucible, method for producing the same, and method for producing silicon single crystal 有权
标题翻译：石英玻璃坩埚，其制造方法以及单晶硅的制造方法
公开(公告)号：US09376336B2
公开(公告)日：2016-06-28
申请号：US13824874
申请日：2011-09-26
申请人： Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
发明人： Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
IPC分类号： C30B15/02 , C03B20/00 , C30B15/08 , C03B19/09 , C03B19/14 , C03B23/20 , C30B15/10 , C30B29/06
CPC分类号： C03B20/00 , C03B19/095 , C03B19/14 , C03B23/20 , C03B2201/23 , C30B15/02 , C30B15/08 , C30B15/10 , C30B29/06 , Y02P40/57 , Y10T117/1032
摘要： Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.
摘要翻译：本文描述了一种生产石英玻璃坩埚的方法，包括以下步骤：制备由石英玻璃制成并具有坩埚形状的坩埚基材; 通过直接工艺或烟灰工艺生产合成石英玻璃材料; 将合成石英玻璃材料加工成坩埚形状而不粉碎合成石英玻璃材料; 并将加工成坩埚形状的合成石英玻璃材料焊接到坩埚基材的内表面。结果，提供了一种石英玻璃坩埚，其在硅单晶制造时避免了硅单晶中的位错产生，坩埚本身产生位错，并且具有高耐热性，方法用于制造石英玻璃坩埚的方法和使用这种石英玻璃坩埚的方法。

2. 发明申请

US20130174777A1 QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL 有权
标题翻译：石墨玻璃巧克力，其生产方法和生产硅单晶的方法
公开(公告)号：US20130174777A1
公开(公告)日：2013-07-11
申请号：US13824874
申请日：2011-09-26
申请人： Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
发明人： Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
IPC分类号： C03B20/00 , C30B15/10
CPC分类号： C03B20/00 , C03B19/095 , C03B19/14 , C03B23/20 , C03B2201/23 , C30B15/02 , C30B15/08 , C30B15/10 , C30B29/06 , Y02P40/57 , Y10T117/1032
摘要： Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.
摘要翻译：本文描述了一种生产石英玻璃坩埚的方法，包括以下步骤：制备由石英玻璃制成并具有坩埚形状的坩埚基材; 通过直接工艺或烟灰工艺生产合成石英玻璃材料; 将合成石英玻璃材料加工成坩埚形状而不粉碎合成石英玻璃材料; 并将加工成坩埚形状的合成石英玻璃材料焊接到坩埚基材的内表面。结果，提供了一种石英玻璃坩埚，其在硅单晶制造时避免了硅单晶中的位错产生，坩埚本身产生位错，并且具有高耐热性，方法用于制造石英玻璃坩埚的方法和使用这种石英玻璃坩埚的方法。

3. 发明授权

US09200380B2 Single-crystal manufacturing method and single-crystal manufacturing apparatus 有权
标题翻译：单晶制造方法和单晶制造装置
公开(公告)号：US09200380B2
公开(公告)日：2015-12-01
申请号：US13125899
申请日：2009-10-19
申请人： Suguru Matsumoto , Susumu Sonokawa , Toshiharu Uesugi , Takashi Mori
发明人： Suguru Matsumoto , Susumu Sonokawa , Toshiharu Uesugi , Takashi Mori
IPC分类号： C30B15/30 , C30B29/06 , C30B35/00
CPC分类号： C30B29/06 , C30B15/305 , C30B35/00 , Y10T117/1032 , Y10T117/1072
摘要： The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.
摘要翻译：本发明提供了一种基于水平磁场施加CZ方法制造单晶的硅单晶制造方法，用于在通过磁场对容纳在石英坩埚中的硅原料熔体施加水平磁场的同时拉动单晶应用装置，包括：测量由所述磁场施加装置产生的磁场的中心位置; 并且在制造单晶之前和/或在单晶制造期间，将测量的中心位置偏离作为单晶的旋转轴的拉构件在水平方向上在2至14mm的范围内。结果，可以提供能够在抑制由于设备的特性引起的变化的同时抑制直径和氧浓度的波动的同时制造单晶的硅单晶制造方法和制造装置。

4. 发明申请

US20130323153A1 SILICON SINGLE CRYSTAL WAFER 审中-公开
标题翻译：硅单晶水晶
公开(公告)号：US20130323153A1
公开(公告)日：2013-12-05
申请号：US13985756
申请日：2012-02-15
申请人： Ryoji Hoshi , Suguru Matsumoto , Hiroyuki Kamada , Kosei Sugawara
发明人： Ryoji Hoshi , Suguru Matsumoto , Hiroyuki Kamada , Kosei Sugawara
IPC分类号： C01B33/02
CPC分类号： C01B33/02 , C30B15/203 , C30B15/206 , C30B29/06 , G01N21/47 , G01N21/9501 , G01N2021/4735 , H01L21/3225
摘要： The present invention provides a silicon single crystal wafer sliced out from a silicon single crystal ingot grown by a Czochralski method, wherein the silicon single crystal wafer is sliced out from the silicon single crystal ingot having oxygen concentration of 8×1017 atoms/cm3 (ASTM' 79) or less and includes of a defect region where neither FPDs nor LEPs are detected by preferential etching but LSTDs are detected by an infrared scattering method. As a result, the wafer having the low oxygen concentration can be provided at low cost without causing a breakdown voltage failure or a leak failure at the time of fabricating a device.
摘要翻译：本发明提供从通过切克劳斯基法生长的硅单晶锭切片的硅单晶晶片，其中将硅单晶晶片从具有8×1017原子/ cm3的氧浓度的硅单晶锭中切出（ASTM '79）以下，并且包括通过优先蚀刻而不检测到FPD或LEP的缺陷区域，而通过红外散射法检测LSTD。结果，可以以低成本提供具有低氧浓度的晶片，而不会在制造器件时引起击穿电压故障或泄漏故障。

5. 发明授权

US08616187B2 Waste heat recovering and cooling apparatus for engine 有权
标题翻译：发动机废热回收和冷却装置
公开(公告)号：US08616187B2
公开(公告)日：2013-12-31
申请号：US13226859
申请日：2011-09-07
申请人： Yoshinobu Yamazaki , Suguru Matsumoto , Junichi Toyoda , Shinya Kurasawa
发明人： Yoshinobu Yamazaki , Suguru Matsumoto , Junichi Toyoda , Shinya Kurasawa
IPC分类号： F02M25/07 , F02B47/08
CPC分类号： F01M5/00 , F01N5/02 , F02M26/30 , F16H57/0412 , Y02T10/16
摘要： A waste heat recovering and cooling apparatus for an engine includes a water pump that ejects cooling water of an engine; an EGR cooler that cools EGR gas introduced into an intake pipe from an exhaust pipe of the engine by using some of the cooling water ejected from the water pump; an EGR valve that opens and closes the channel of the EGR gas passing through the EGR cooler; and a transmission warmer that heats lubricating oil of a transmission by the cooling water passing through the EGR cooler.
摘要翻译：用于发动机的废热回收和冷却装置包括喷射发动机的冷却水的水泵; EGR冷却器，其通过使用从所述水泵喷射的一些冷却水来冷却从所述发动机的排气管引入到所述进气管的EGR气体; EGR阀，其打开和关闭通过EGR冷却器的EGR气体的通道; 以及通过通过EGR冷却器的冷却水加热变速器的润滑油的变速箱。

6. 发明申请

US20130247815A1 SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL 审中-公开
标题翻译：单晶生产装置和单晶生产方法
公开(公告)号：US20130247815A1
公开(公告)日：2013-09-26
申请号：US13990266
申请日：2012-01-06
申请人： Kosei Sugawara , Suguru Matsumoto , Toshiro Shimada , Ryoji Hoshi
发明人： Kosei Sugawara , Suguru Matsumoto , Toshiro Shimada , Ryoji Hoshi
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1068
摘要： A single crystal production apparatus including: a crucible containing raw material melt; a heater heating the raw material melt; a cooling cylinder that is cooled forcedly by a cooling medium; and a cooling chamber that houses the crucible, the heater, and the cooling cylinder, wherein a heat-shielding member having a heat insulating material is disposed, near an interface between the raw material melt and a single crystal being pulled, in such a way as to surround the single crystal being pulled, the cooling cylinder is disposed above the heat-shielding member in such a way as to surround the single crystal being pulled, and a cooling-cylinder-peripheral heat insulator is disposed with a gap provided between the cooling-cylinder-peripheral heat insulator and a periphery of the cooling cylinder in such a way as to surround the cooling cylinder.
摘要翻译：一种单晶生产设备，包括：含有原料熔体的坩埚; 加热器加热原料熔体; 被冷却介质强制冷却的冷却缸; 以及容纳坩埚，加热器和冷却筒的冷却室，其中具有绝热材料的隔热构件设置在原料熔体和被拉出的单晶之间的界面附近，以这种方式为了围绕被拉动的单晶，冷却筒以围绕被拉动的单晶的方式设置在隔热构件的上方，并且设置有冷却缸外周绝热体，间隙设置在冷却缸外周绝热体和冷却筒的周围，以包围冷却筒。

7. 发明申请

US20110214605A1 SINGLE-CRYSTAL MANUFACTURING METHOD AND SINGLE-CRYSTAL MANUFACTURING APPARATUS 有权
标题翻译：单晶制造方法和单晶制造设备
公开(公告)号：US20110214605A1
公开(公告)日：2011-09-08
申请号：US13125899
申请日：2009-10-19
申请人： Suguru Matsumoto , Susumu Sonokawa , Toshiharu Uesugi , Takashi Mori
发明人： Suguru Matsumoto , Susumu Sonokawa , Toshiharu Uesugi , Takashi Mori
IPC分类号： C30B15/30 , C30B15/00
CPC分类号： C30B29/06 , C30B15/305 , C30B35/00 , Y10T117/1032 , Y10T117/1072
摘要： The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.
摘要翻译：本发明提供了一种基于水平磁场施加CZ方法制造单晶的硅单晶制造方法，用于在通过磁场对容纳在石英坩埚中的硅原料熔体施加水平磁场的同时拉动单晶应用装置，包括：测量由所述磁场施加装置产生的磁场的中心位置; 并且在制造单晶之前和/或在单晶制造期间，将测量的中心位置偏离作为单晶的旋转轴的拉构件在水平方向上在2至14mm的范围内。结果，可以提供能够在抑制由于设备的特性引起的变化的同时抑制直径和氧浓度的波动的同时制造单晶的硅单晶制造方法和制造装置。

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