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    • 1. 发明申请
    • System and device for transmission using ultrawide band pass filter
    • 使用超宽带通滤波器进行传输的系统和设备
    • US20050064823A1
    • 2005-03-24
    • US10935081
    • 2004-09-08
    • Akihiko SaitoHiroshi Harada
    • Akihiko SaitoHiroshi Harada
    • H01P1/203H01P1/215H04B1/04H04B1/16H04B1/02
    • H01P1/20363H01P1/215H04B1/7172
    • Disclosed are a transmission system and a device of small scale, low cost and low power for transmitting signal of a rate over 1 Gbps using a small scale and low loss ultrawide band pass filter (UWBPF). The transmission system comprises the steps of generating pulse signal by a short pulse generator, band-limiting the pulse signal by passing it through a waveshape forming filter, and transmitting the resulting pulse signal in a certain frequency band through a UWBPF, and receiving and passing the signal wave through a UWBPF of the same frequency range and introducing the signal wave through a pulse detector into the determining part. The UWBPF used is prepared by forming a distribution constant circuit on a lossy substrate having low-pass function.
    • 公开了一种小规模,低成本和低功率的传输系统和装置,用于使用小规模和低损耗超宽带通滤波器(UWBPF)传输速率超过1Gbps的信号。 传输系统包括通过短脉冲发生器产生脉冲信号的步骤,通过使其通过波形形成滤波器对脉冲信号进行带限制,并通过UWBPF将得到的脉冲信号传输到某一频带,并接收和传递 信号波通过相同频率范围的UWBPF,并将信号波通过脉冲检测器引入确定部分。 使用的UWBPF通过在具有低通功能的有损基板上形成分布常数电路来制备。
    • 2. 发明授权
    • Band pass filter for GHz-band
    • 用于GHz频带的带通滤波器
    • US06995632B2
    • 2006-02-07
    • US10756398
    • 2004-01-14
    • Akihiko SaitoHiroshi Harada
    • Akihiko SaitoHiroshi Harada
    • H03H7/01
    • H01P1/203H01P1/215
    • Disclosed is a high-frequency band pass filter of simple structure for use in a frequency range from hundreds of MHz to over ten GHz. The band pass filter comprises a magnetic loss sheet 1 prepared by dispersing fine powder of averaged particle size up to 30 μm of a soft magnetic metal such as an Fe—Cr—Al alloy, an input signal line 2 and an output signal line 3 made of a conductive strip disposed in serial direction with a gap between them, a capacitance means connecting the opposite ends of the lines and a GND line 4 disposed on the reverse side of the sheet. The capacitance means may be either a chip condenser 5, or that formed by disposing an internal line 7 of another conductive strip with intermediation of insulating film 6 to bridge on the input signal line 2 and the output signal line 3 to have overlapping parts.
    • 公开了一种结构简单的高频带通滤波器,用于从数百MHz到10 GHz的频率范围。 带通滤波器包括通过将平均粒径为30μm的细粉末的Fe-Cr-Al合金,输入信号线2和输出信号线3制成的磁损耗片1 导电条沿串联方向设置在它们之间的间隙,连接线的相对端的电容装置和设置在片材背面的GND线4。 电容装置可以是片式电容器5,也可以是通过将绝缘膜6的另一导电条的内部线7设置在输入信号线2和输出信号线3上而具有重叠部分而形成的电容装置。
    • 5. 发明授权
    • Electromagnetic wave absorber and a process of producing same
    • 电磁波吸收器及其制造方法
    • US07113123B2
    • 2006-09-26
    • US10878283
    • 2004-06-29
    • Akihiko SaitoNobuaki Tanaka
    • Akihiko SaitoNobuaki Tanaka
    • H01Q17/00G01S13/00
    • H05K9/0083
    • An electromagnetic wave absorber having an excellent electromagnetic wave absorption characteristic in 5 to 6 GHz band. The electromagnetic wave absorber has a matrix and powder filled in the matrix. The particles of the powder have electrical conductivity at least in surface regions thereof and have a particle diameter of 3 to 20 μm as expressed by D50 value. A volumetric ratio (V) in which the powder is filled in the matrix is set such that a standardized value expressed as a value obtained by dividing a complex relative permeability (μ″) of the electromagnetic wave absorber in a frequency band to be absorbed thereby by the volumetric ratio (V) is constant as far as the particle diameter of the powder used, as expressed by the D50 value, is within the range of 3 to 20 μm.
    • 5〜6GHz频带的电磁波吸收特性优异的电磁波吸收体。 电磁波吸收体具有填充在基质中的基质和粉末。 粉末的颗粒至少在其表面区域具有导电性,并且具有由D 50值表示的3至20μm的颗粒直径。 将粉末填充在基质中的体积比(V)设定为表示为通过将电磁波吸收体的复数相对磁导率(mu“)除以频率吸收而得到的值的标准化值 因此通过DAL 50值表示的所用粉末的粒径的体积比(V)是恒定的,在3〜20μm的范围内。
    • 7. 发明申请
    • Electomagnetic wave absorber and a process of producing same
    • 电磁波吸收器及其制造方法
    • US20050030217A1
    • 2005-02-10
    • US10878283
    • 2004-06-29
    • Akihiko SaitoNobuaki Tanaka
    • Akihiko SaitoNobuaki Tanaka
    • H05K9/00H01Q17/00
    • H05K9/0083
    • An electromagnetic wave absorber having an excellent electromagnetic wave absorption characteristic in 5 to 6 GHz band. The electromagnetic wave absorber has a matrix and powder filled in the matrix. The particles of the powder have electrical conductivity at least in surface regions thereof and have a particle diameter of 3 to 20 μm as expressed by D50 value. A volumetric ratio (V) in which the powder is filled in the matrix is set such that a standardized value expressed as a value obtained by dividing a complex relative permeability (μ″) of the electromagnetic wave absorber in a frequency band to be absorbed thereby by the volumetric ratio (V) is constant as far as the particle diameter of the powder used, as expressed by the D50 value, is within the range of 3 to 20 μm.
    • 5〜6GHz频带的电磁波吸收特性优异的电磁波吸收体。 电磁波吸收体具有填充在基质中的基质和粉末。 粉末的颗粒至少在其表面区域具有导电性,并且具有由D50值表示的3至20μm的颗粒直径。 将粉末填充在基质中的体积比(V)设定为表示为通过将电磁波吸收体的复数相对磁导率(mu“)除以频率吸收而得到的值的标准化值 只要D50值表示的粉末的粒径在3〜20μm的范围内,体积比(V)恒定即可。
    • 8. 发明授权
    • Sensor adjusting circuit
    • 传感器调节电路
    • US06188340B1
    • 2001-02-13
    • US09167984
    • 1998-10-08
    • Masahiro MatsumotoSatoshi ShimadaSeikou SuzukiAkihiko SaitoAtsushi MiyazakiKeiji Hanzawa
    • Masahiro MatsumotoSatoshi ShimadaSeikou SuzukiAkihiko SaitoAtsushi MiyazakiKeiji Hanzawa
    • H03M100
    • G01D3/022G01D3/02
    • A sensor adjusting circuit for adjusting a digital sensor, whose circuit scale is small and which can maintain high accuracy in a wide adjustment range is provided. A sensor adjusting circuit for adjusting an analog input signal inputted from a sensor and outputting it as another analog output signal in accordance with a physical quantity to be sensed, comprises: a first analog-to-digital converter having an analog integrator (2) for integrating the analog input signal, a comparator (3) for comparing an output of the analog integrator with a predetermined value, and a D/A converter (7) for outputting an output of the comparator as the input signal; and a second digital-to-analog converter (5) for converting the output of the comparator and outputting it as the analog output signal.
    • 提供了一种用于调整数字传感器的传感器调节电路,其电路规模小并且可以在宽的调节范围内保持高精度。 一种传感器调节电路,用于调节从传感器输入的模拟输入信号,并根据要感测的物理量将其输出为另一个模拟输出信号,包括:第一模数转换器,具有模拟积分器(2),用于 积分模拟输入信号,比较器(3),用于将模拟积分器的输出与预定值进行比较;以及D / A转换器(7),用于输出比较器的输出作为输入信号; 以及用于转换比较器的输出并将其作为模拟输出信号输出的第二数模转换器(5)。
    • 10. 发明授权
    • Resistance heated stem mounted aluminum susceptor assembly
    • 电阻加热杆安装铝基座组件
    • US5688331A
    • 1997-11-18
    • US673599
    • 1996-07-01
    • Michio ArugaAtsunobu OhkuraAkihiko SaitoKenji SuzukiKenichi TaguchiDale Robert DuBoisAlan Ferris Morrison
    • Michio ArugaAtsunobu OhkuraAkihiko SaitoKenji SuzukiKenichi TaguchiDale Robert DuBoisAlan Ferris Morrison
    • C23C16/44C23C16/455C23C16/458C23C16/46C23C16/00
    • C23C16/45521C23C16/4586C23C16/46
    • In CVD processes susceptors can be made of a thermally conductive ceramic such as aluminum nitride which has superior durability with respect to fluorine plasma. Such aluminum nitride susceptors can include an embedded heater element and/or embedded ground or RF electrodes which as a result of their embedment are protected from the deleterious effects of the processing chamber environment. The conductors leading to these elements are protected from exposure to the process chamber environment by passing through a cylindrical member filled with inert gas supporting the wafer support plate of said susceptor. Alternately, the conductors leading to these elements can be run through passages in a hermetically sealed stem supporting the susceptor wafer support plate. The stem passes through the wall of the processing chamber so that connections to the susceptor wafer support plate can be made outside the processing chamber. Such a stem supporting the susceptor support plate can also provide passages for passing vacuum and purge gas to the back of the wafer support plate. Vacuum and purge gas can then be distributed through passages in the wafer support plate as appropriate to its top surface for a vacuum chuck and perimeter purge gas flow.
    • 在CVD工艺中,感受体可以由诸如氮化铝的导热陶瓷制成,其相对于氟等离子体具有优异的耐久性。 这种氮化铝基座可以包括嵌入式加热器元件和/或嵌入式接地或RF电极,其作为其嵌入的结果被保护免受处理室环境的有害影响。 导向这些元件的导体通过穿过填充有支撑所述基座的晶片支撑板的惰性气体的圆柱形构件来防止暴露于处理室环境。 或者,导向这些元件的导体可以在支撑基座晶片支撑板的密封的阀杆中通过通道。 杆穿过处理室的壁,使得可以在处理室外部与基座晶片支撑板的连接。 支撑感受器支撑板的这种杆也可以提供用于将真空和吹扫气体通过到晶片支撑板背面的通道。 然后可以将真空和吹扫气体通过晶片支撑板中的通道分配到其顶部表面,用于真空吸盘和周边吹扫气体流。